Patents by Inventor Akira Kouchiyama
Akira Kouchiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9564583Abstract: A memory element includes an amorphous thin-film that is between a first electrode and a second electrode in which at least one of the first electrode and the second electrode contains Ag or Cu. The amorphous thin film is a non-phase changing, amorphous material. A storage device includes a plurality of memory elements. Each memory element includes a wiring connected to a side of the first electrode and a wiring connected to a side of the second electrode.Type: GrantFiled: March 18, 2004Date of Patent: February 7, 2017Assignee: SONY CORPORATIONInventors: Katsuhisa Aratani, Akira Kouchiyama, Minoru Ishida
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Patent number: 9543514Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.Type: GrantFiled: November 24, 2015Date of Patent: January 10, 2017Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
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Publication number: 20160079528Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.Type: ApplicationFiled: November 24, 2015Publication date: March 17, 2016Inventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
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Patent number: 9263670Abstract: A memory element and a memory device, the memory element including a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes.Type: GrantFiled: September 16, 2013Date of Patent: February 16, 2016Assignee: SONY CORPORATIONInventors: Shuichiro Yasuda, Hiroaki Sei, Akira Kouchiyama, Masayuki Shimuta, Naomi Yamada
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Patent number: 9240549Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.Type: GrantFiled: March 7, 2014Date of Patent: January 19, 2016Assignee: SONY CORPORATIONInventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
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Patent number: 9202560Abstract: There are provided a memory element and a memory device excellently operating at a low current, and having the satisfactory retention characteristics. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and being in a single- or multi-layer structure including a layer containing a highest percentage of tellurium (Te) as an anionic component, and an ion source layer disposed on the second electrode side, and containing a metallic element and one or more chalcogen elements including tellurium (Te), sulfur (S), and selenium (Se) with aluminum (Al) of 27.7 atomic % or more but 47.4 atomic % or less.Type: GrantFiled: February 23, 2012Date of Patent: December 1, 2015Assignee: SONY CORPORATIONInventors: Tetsuya Mizuguchi, Kazuhiro Ohba, Shuichiro Yasuda, Masayuki Shimuta, Akira Kouchiyama, Hiroaki Sei
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Patent number: 9112149Abstract: A memory element with reduced degradation of memory characteristics that is caused by deterioration of a memory layer, a method of manufacturing the memory element, and a memory device are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing fluoride, and an ion source layer disposed between the resistance change layer and the second electrode.Type: GrantFiled: December 5, 2011Date of Patent: August 18, 2015Assignee: SONY CORPORATIONInventors: Hiroaki Sei, Shuichiro Yasuda, Masayuki Shimuta, Katsuhisa Aratani, Akira Kouchiyama, Tetsuya Mizuguchi, Kazuhiro Ohba
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Patent number: 8981325Abstract: A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the memory thin film 4 or a layer 3 in contact with the memory thin film 4 contains any one of elements selected from Cu, Ag, Zn and the memory thin film 4 or the layer 3 in contact with the memory thin film 4 contains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.Type: GrantFiled: February 10, 2010Date of Patent: March 17, 2015Assignee: Sony CorporationInventors: Katsuhisa Aratani, Akihiro Maesaka, Akira Kouchiyama, Tomohito Tsushima
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Patent number: 8884397Abstract: A memory device 10 having an arrangement in which a memory thin film is sandwiched between first and second electrodes, the memory thin film contains at least rare earth elements, the memory thin film 4 or a layer in contact with the memory thin film contains any one of elements selected from Cu, Ag, Zn and the memory thin film or the layer in contact with the memory thin film contains any one of elements selected from Te, S, Se.Type: GrantFiled: December 6, 2010Date of Patent: November 11, 2014Assignee: Sony CorporationInventors: Katsuhisa Aratani, Akihiro Maesaka, Akira Kouchiyama, Tomohito Tsushima
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Publication number: 20140183438Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.Type: ApplicationFiled: March 7, 2014Publication date: July 3, 2014Applicant: Sony CorporationInventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
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Patent number: 8730709Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.Type: GrantFiled: March 18, 2013Date of Patent: May 20, 2014Assignee: Sony CorporationInventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
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Patent number: 8685786Abstract: Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array.Type: GrantFiled: May 24, 2013Date of Patent: April 1, 2014Assignee: Sony CorporationInventors: Yoshihisa Kagawa, Tetsuya Mizuguchi, Ichiro Fujiwara, Akira Kouchiyama, Satoshi Sasaki, Naomi Yamada
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Publication number: 20140021434Abstract: A memory element and a memory device, the memory element including a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer.Type: ApplicationFiled: September 16, 2013Publication date: January 23, 2014Applicant: SONY CORPORATIONInventors: Shuichiro Yasuda, Hiroaki Sei, Akira Kouchiyama, Masayuki Shimuta, Naomi Yamada
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Publication number: 20130256626Abstract: Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array.Type: ApplicationFiled: May 24, 2013Publication date: October 3, 2013Inventors: Yoshihisa KAGAWA, Tetsuya MIZUGUCHI, Ichiro FUJIWARA, Akira KOUCHIYAMA, Satoshi SASAKI, Naomi YAMADA
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Patent number: 8546782Abstract: A memory element and a memory device with improved controllability over resistance change by applied voltage are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes.Type: GrantFiled: June 21, 2011Date of Patent: October 1, 2013Assignee: Sony CorporationInventors: Shuichiro Yasuda, Hiroaki Sei, Akira Kouchiyama, Masayuki Shimuta, Naomi Yamada
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Publication number: 20130240818Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.Type: ApplicationFiled: March 18, 2013Publication date: September 19, 2013Applicant: SONY CORPORATIONInventors: KAZUHIRO OHBA, SHUICHIRO YASUDA, TETSUYA MIZUGUCHI, KATSUHISA ARATANI, MASAYUKI SHIMUTA, AKIRA KOUCHIYAMA, MAYUMI OGASAWARA
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Patent number: 8427860Abstract: A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.Type: GrantFiled: February 1, 2011Date of Patent: April 23, 2013Assignee: Sony CorporationInventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
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Publication number: 20120294063Abstract: There are provided a memory element and a memory device excellently operating at a low current, and having the satisfactory retention characteristics. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and being in a single- or multi-layer structure including a layer containing a highest percentage of tellurium (Te) as an anionic component, and an ion source layer disposed on the second electrode side, and containing a metallic element and one or more chalcogen elements including tellurium (Te), sulfur (S), and selenium (Se) with aluminum (Al) of 27.7 atomic % or more but 47.4 atomic % or less.Type: ApplicationFiled: February 23, 2012Publication date: November 22, 2012Applicant: SONY CORPORATIONInventors: Tetsuya Mizuguchi, Kazuhiro Ohba, Shuichiro Yasuda, Masayuki Shimuta, Akira Kouchiyama, Hiroaki Sei
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Patent number: 8295074Abstract: A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element 10, a nonlinear resistance element 20, and an MOS transistor 30 are electrically connected in series. The storage element 10 has a nonlinear current-voltage characteristic opposite to a nonlinear current-voltage characteristic of the MOS transistor 30, and changes into a high or low resistance state in accordance with a polarity of applied voltage. The nonlinear resistance element 20 has a nonlinear current-voltage characteristic similar to the nonlinear current-voltage characteristic of the storage element 10.Type: GrantFiled: November 27, 2008Date of Patent: October 23, 2012Assignee: Sony CorporationInventors: Shuichiro Yasuda, Katsuhisa Aratani, Akira Kouchiyama, Tetsuya Mizuguchi, Satoshi Sasaki
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Patent number: 8222713Abstract: A storage element and storage apparatus are provided. A storage element includes a storage layer disposed between two electrodes, and an ion source layer provided in contact with the storage layer and containing any element selected from the group consisting of Cu, Ag, and Zn, wherein the material of the electrode on the storage layer side, of the two electrodes, is composed of an amorphous tungsten alloy containing at least one element selected from the group consisting of Zr, Nb, Mo, and Ta, or an amorphous tantalum nitride. The storage element is capable of stably performing an information recording operation.Type: GrantFiled: December 1, 2006Date of Patent: July 17, 2012Assignee: Sony CorporationInventors: Akira Kouchiyama, Katsuhisa Aratani