Abstract: A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.

Abstract: A memory element 10 includes a memory layer 4 positioned between a first electrode 2 and a second electrode 6, in which an element selected from Cu, Ag, and Zn is contained in the memory layer 4 or in a layer 3 in contact with the memory layer 4, a resistance of the memory element 10 is changed by a voltage applied to the memory element 10 to perform recording of information, and in an erasing process of changing from a recorded state of low resistance value of the memory element 10 to an erased state of high resistance value of the memory element 10, a fluctuation, which is caused by an increase of the voltage applied to the memory element 10, of the resistance value of the memory element 10 at the end of the erasing process is within ten times at a maximum.

Abstract: A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.

Abstract: A memory element which stably performs operations such as data recording and which has a stable structure with respect to heat is provided. A memory element 10 includes a memory layer 4 and an ion source layer 3 positioned between the first electrode 2 and second electrode 6, in which the ion source layer 3 contains any of elements selected from Cu, Ag and Zn, and any of elements selected from Te, S and Se, and the memory layer 4 is made of any of tantalum oxide, niobium oxide, aluminum oxide, hafnium oxide and zirconium oxide, or is made of mixed materials thereof.

Abstract: A first optical device according to the present invention comprises a base made of a first optical material and a second optical material having a refractive index different from that of the first optical material, and the base has a concavity, and the second optical material is filled in this concavity. A second optical device according to the present invention comprises a base made of a first optical material and a second optical material having a refractive index different from the first optical material, and the base comprises first and second faces facing each other, a first concavity is formed in the first face and a second concavity is formed in the second face, and the second optical material is filled in the first and second concavities.

Abstract: A storage element and storage apparatus are provided. A storage element includes a storage layer disposed between two electrodes, and an ion source layer provided in contact with the storage layer and containing any element selected from the group consisting of Cu, Ag, and Zn, wherein the material of the electrode on the storage layer side, of the two electrodes, is composed of an amorphous tungsten alloy containing at least one element selected from the group consisting of Zr, Nb, Mo, and Ta, or an amorphous tantalum nitride. The storage element is capable of stably performing an information recording operation.

Abstract: A memory device is provided in which recording of multi-valued data can be performed at a high speed and the recording of multi-valued data can be performed with a drive circuit having comparatively simple configuration.

Abstract: A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.

Abstract: A storage device comprises a memory element and an applying unit for applying a voltage to the memory element wherein the memory element changes its characteristic to record thereon information with application of a voltage to the memory element by the applying unit, the memory element further changing its characteristic when the same information is recorded on the memory element continuously. The memory element has a recording method which comprises the steps of detecting content of information that has already been recorded on the memory element when the information is recorded, comparing the information that has already been recorded on the memory element with information to be recorded on the memory element, applying a voltage to the memory element to make an ordinary information recording process if the two information are different from each other and disabling the ordinary information recording process when the two information are identical to each other.

Abstract: A memory device is obtained in which stable recording of information can be performed and a period of time required for the recording of information can be shortened.

Abstract: An optical device used for converging a light beam on a signal recording surface of an optical disc includes an optical lens for converging the light beam on a signal recording surface of the optical disc and a light barrier portion provided on a surface of the optical lens facing the optical disc. The light barrier portion includes a light transmitting aperture through which is transmitted the light beam converged by the optical lens. The light beam illuminated on the optical disc has its diameter controlled by this light transmitting aperture. The light radiated by a light source so as to be incident to the optical device is converged by the optical lens. The light converged by the optical lens is transmitted through the light transmitting aperture and illuminated on the signal recording surface of the optical disc.

Abstract: A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first and the second electrodes. Furthermore, an oxidation-reduction active material changeable into an electrode reaction inhibition layer by applying voltages to the first and the second electrodes is contained in a region that is covered by an electric field, the electric field being generated when the voltage is applied, and the electrode reaction inhibition layer is either formed along an interface region between the second electrode and the inter-electrode material layer, or changes an area thereof, or disappears depending on an application condition of the voltage to the first and the second.

Abstract: A first optical device according to the present invention comprises a base made of a first optical material and a second optical material having a refractive index different from that of the first optical material, and the base has a concavity, and the second optical material is filled in this concavity. A second optical device according to the present invention comprises a base made of a first optical material and a second optical material having a refractive index different from the first optical material, and the base comprises first and second faces facing each other, a first concavity is formed in the first face and a second concavity is formed in the second face, and the second optical material is filled in the first and second concavities.

Abstract: A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.

Abstract: A memory element in which data recording and data readout can be performed stably without difficulties and which can be manufactured with a comparatively simplified method is provided. The memory element 10 includes a memory layer 4 and an ion source layer 3 positioned between the first electrode 2 and the second electrode 6, in which the ion source layer 3 contains any of elements selected from Cu, Ag, Zn and any of elements selected from Te, S, Se, and the ion source layer further contains boron (or rare-earth elements and silicon).

Abstract: Data reading can be easily and precisely performed by setting specific conditions in writing into a selected memory cell. A memory cell has a structure, in which an interelectrode material layer is sandwiched between a first electrode and a second electrode. Data is stored by a change in a resistance value between the first electrode and the second electrode. The resistance value when a memory element is in a high resistance state is expressed as R_mem_high; the resistance value when the memory element is in a low resistance state is expressed as R_mem_low1; the resistance value of a load circuit is expressed as R_load; the reading voltage is expressed as Vread by setting the voltage of a second power supply line to the reference voltage; and the threshold voltage is expressed as Vth_critical. In writing data into the memory cell, the low resistance state is created so that these parameters satisfy specific relations.

Abstract: A memory element which stably performs operations such as data recording and which has a stable structure with respect to heat is provided. A memory element 10 includes a memory layer 4 and an ion source layer 3 positioned between the first electrode 2 and second electrode 6, in which the ion source layer 3 contains any of elements selected from Cu, Ag and Zn, and any of elements selected from Te, S and Se, and the memory layer 4 is made of any of tantalum oxide, niobium oxide, aluminum oxide, hafnium oxide and zirconium oxide, or is made of mixed materials thereof.

Abstract: An optical lens whose focal length is different on first and second planes perpendicular to each other is provided. The optical lens is configured such that a convex element, which is formed integrally with a substrate having a flat face, has a convex curved face that functions as an optical lens and is shaped such that the curvature on a first cross section and the curvature on a second cross section perpendicular to and intersecting with the first cross section are different from each other, whereby the focal lengths on the first and second cross sections are different from each other. A groove of a substantially elliptical shape or a substantially rectangular shape is formed along the boundary between the substrate and the convex element. The optical lens is used to produce a focus error signal or is incorporated into an optical pickup apparatus.

Abstract: A memory element is provided in which recording and erasure of information can be performed easily and stably. A memory element 10 includes a memory layer 4 positioned between a first electrode 2 and a second electrode 6, in which an element selected from Cu, Ag, and Zn is contained in the memory layer 4 or in a layer 3 in contact with the memory layer 4, a resistance of the memory element 10 is changed by a voltage applied to the memory element 10 to perform recording of information, and in an erasing process of changing from a recorded state of low resistance value of the memory element 10 to an erased state of high resistance value of the memory element 10, a fluctuation, which is caused by an increase of the voltage applied to the memory element 10, of the resistance value of the memory element 10 at the end of the erasing process is within ten times at a maximum.

Abstract: A storage device is provided. The storage device includes a number of storage cells arranged and each having a storage element and an active element including a MOS transistor that controls access to the storage element, and in which applying a voltage to the storage element the resistance value of the storage element changes and information is recorded wherein the resistance value of a storage element after information has been written is prevented from becoming lower than necessary and in which information writing can be easily performed.