Abstract: A plasma processing apparatus of the present invention includes a matching circuit for impedance matching between a radio-frequency generator and a plasma processing chamber, and one or a plurality of impedance converting circuits provided between the matching circuit and the radio-frequency generator. The impedance converting circuit converts an impedance to decrease a difference in impedance to be matched by the matching circuit, thereby decreasing a change in the output impedance with a moving amount of a capacitance control of one of variable passive elements of the matching circuit, such as a load capacitor and a tuning capacitor. Therefore, a change in the impedance of the plasma processing chamber can be finely controlled.

Abstract: A flexible printed circuit board includes a substrate layer composed of insulating material, a protection circuit of a thin-film capacitor element, the protection circuit including a first wiring layer on the substrate layer, a dielectric layer, and a counter electrode layer. At least a portion of each of the first wiring layer and the counter electrode layer serves as a terminal. The front surface of each of the first wiring layer and the counter electrode layer, except the terminal portion, is covered with an insulating coating.

Abstract: A pyrrolo[3,2-d]pyrimidine derivative represented by the formula (I) or a pharamaceutically acceptable salt of the derivative. The derivative or salt is useful as a GSK-3 inhibitor.

Abstract: A compound having GSK-3 inhibiting function. A1 and A3 are a single bond, an aliphatic hydrocarbon group; A2 and A4 are a single bond, CO, COO, CONR, O, OCO, NR, NRCO, NRCOO, etc.; G1 is a single bond, an aliphatic hydrocarbon, aromatic hydrocarbon, heterocyclic; G2 is a hydrogen atom, an aliphatic hydrocarbon, an alicyclic hydrocarbon, an aromatic hydrocarbon, heterocyclic; A5 is a single bond, NR; R2 is H, halogen, an aliphatic hydrocarbon, alicyclic hydrocarbon, aromatic hydrocarbon, heterocyclic; A6 is a single bond, NR, CO, NRCO, NRCONR, CONR, COO, O, etc.; R3 is H, halogen, nitro, saturated aliphatic hydrocarbon, alicyclic hydrocarbon, aromatic hydrocarbon, heterocyclic; and when A6 is CR?CR or C?C; R3 may be a trimethylsilyl, formyl, acyl, carboxyl, alkoxylcarbonyl, carbamoyl, alkylcarbamoyl or cyano group; and R is H or an aliphatic hydrocarbon group.

Abstract: A plasma processing unit has two electrodes for exciting a plasma, a plasma processing chamber, an RF generator, a matching circuit for performing impedance matching between the plasma processing chamber and the RF generator, a feeder that connects an output terminal of the matching circuit to one of the electrode, and a supplier that connects the RF generator to an input terminal of the matching circuit. The feeder is arranged to decrease the average density per unit volume of the RF power supplied from the RF generator as the RF power flows from the output terminal of the matching circuit to the electrode. The section of the plasma processing unit that is DC-grounded has a surface provided with a low-resistance portion. The supplier or the feeder is fixed on a floor using RF impedance adjustors so as to prevent the RF impedance therein from changing.

Abstract: A plasma processing apparatus including a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the electrode, a radiofrequency feeder connected to the electrode, and a matching circuit having an input terminal and an output end. The input terminal is connected to the radiofrequency generator and the output end is connected to an end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. A frequency which is three times a first series resonant frequency f0 of the plasma processing chamber, which is measured at the end of the radiofrequency feeder, is larger than a power frequency fe of the radiofrequency waves.

Abstract: A plasma processing apparatus has a plasma processing chamber having a plasma excitation electrode, a radiofrequency generator connected to the plasma excitation electrode, and a matching circuit for matching the impedance between the plasma processing chamber and the radiofrequency generator. The loss capacitance CX1 at a later time t1 after delivery is measured between the plasma excitation electrode and ground potential positions which are grounded. The performance is evaluated by whether or not the loss capacitance CX1 is less than 26 times the plasma electrode capacitance Ce1 at the later time t1 between the plasma excitation electrode and a counter electrode which cooperate with each other.

Abstract: Filtration-function-equipped cooling water equipment that includes: filtration equipment connected to water-purifying, oxygen-supply-capable cooling water equipment, wherein the filtration equipment includes a filtration space for a filter, wherein the water-purifying, oxygen-supply-capable cooling water equipment comprises a cooling oxidation unit disposed inside of a tank body and comprising a honeycombed or latticed porous material, wherein the filtration-function-equipped cooling water equipment operates to enlarge a contact area between water and air when untreated water drips onto the cooling oxidation unit and flows through the cooling oxidation unit while forced air flows in a counter current against the flow of water in the cooling oxidation unit, thereby facilitating solubility of oxygen in the untreated water and augmenting a cooling capability due to evaporation provided by the water-purifying, oxygen-supply-capable cooling water equipment.

Abstract: A plasma processing apparatus comprising a plurality of plasma processing units is provided. Each of the plasma processing units has a matching circuit connected between a radiofrequency generator and a plasma excitation electrode. Among these plasma processing units, a variation <RA> between the maximum and minimum values of input-terminal-side AC resistances RA of the matching circuits defined by <RA>=(RAmax?RAmin)/(RAmax+RAmin) is adjusted to be less than 0.5. A variation between the maximum and minimum values of output-terminal-side AC resistances RB of the matching circuits defined by <RB>=(RBmax?RBmin)./(RBmax+RBmin) is also adjusted to be less than 0.5. The plasma processing units can be adjusted to achieve substantially uniform plasma results in a shorter period of time.

Abstract: The performance of a plasma processing apparatus which is disassembled, transferred, and reassembled is evaluated. The plasma processing apparatus has a plasma processing chamber having an electrode for exciting a plasma, a radiofrequency generator connected to the electrode, and an impedance matching circuit for performing the impedance matching between the plasma processing chamber and the radiofrequency generator. The performance of the apparatus is evaluated whether or not three times the first series resonant frequency of the plasma processing chamber is larger than the power frequency supplied to the plasma processing chamber.

Abstract: A plasma processing apparatus has a plasma processing chamber having a plasma excitation electrode, a radiofrequency generator connected to the plasma excitation electrode, and a matching circuit for matching the impedance between the plasma processing chamber and the radiofrequency generator. The loss capacitance CX1 at a later time t1 after delivery is measured between the plasma excitation electrode and ground potential positions which are grounded. The performance is evaluated by whether or not the loss capacitance CX1 is less than 26 times the plasma electrode capacitance Ce1 at the later time t1 between the plasma excitation electrode and a counter electrode which cooperate with each other.

Abstract: A plasma processing apparatus includes a chassis accommodating an impedance matching circuit. The impedance matching circuit is placed between an RF generator and a plasma excitation electrode. Magnetic probes for detecting a magnetic field generated at a slit in a sidewall of the chassis are placed axisymmetrically. The plasma processing apparatus also includes a feedback circuit for feeding back to an RF generator or a matching circuit so that a current detected by a current-detecting unit maintains a predetermined value.

Abstract: The performance of a plasma processing apparatus which is disassembled, transferred, and reassembled is evaluated. The plasma processing apparatus has a plasma processing chamber having an electrode for exciting a plasma, a radiofrequency generator connected to the electrode, and an impedance matching circuit for performing the impedance matching between the plasma processing chamber and the radiofrequency generator. The performance of the apparatus is evaluated whether or not three times the first series resonant frequency of the plasma processing chamber is larger than the power frequency supplied to the plasma processing chamber.

Abstract: An insulation box unit and a refrigerator of the present invention employs i) rigid urethane foam with a 8.0 MPa-or-greater bending modulus, and a 60 kg/m3-or-lower density, and ii) a vacuum insulation material. The proper bending modulus provides the insulation box unit with a substantial strength, even in the case that the coverage of the vacuum insulation material with respect to the surface of the outer box exceeds 40%. The proper density prevents the insulation box unit from poor insulation efficiency due to undesired solid thermal conductivity. Despite of an extended use of the vacuum insulation material, the insulation box unit offers an excellent insulation efficiency and therefore accelerates energy saving. According to the recycling method of the present invention, rigid urethane foam formed of tolylene di-isocyanate composition, which was separated from refrigerator wastes, is recycled as a material of rigid urethane foam.

Abstract: A plasma processing apparatus has a plasma processing chamber that accommodates an electrode pair of a plasma excitation electrode for exciting plasma and a susceptor electrode facing the plasma excitation electrode, a workpiece to be treated being placed therebetween. The apparatus also has a chassis that accommodates an impedance matching circuit, provided in the middle of a supply path for feeding RF power from an RF generator to the plasma excitation electrode, for matching the impedance between the RF generator and the plasma processing chamber. In the chassis, impedances are axisymmetrically equal at a predetermined frequency with respect to the direction of a high-frequency current returning to the RF generator. The matching circuit has at least two inductance coils connected in parallel.

Abstract: A liquid crystal display apparatus includes a first substrate, a second substrate opposed to the first substrate, liquid crystals disposed between the first and second substrates, and a DC power supply. The first substrate has a plurality of scanning lines; a plurality of signal lines, the scanning lines and the signal lines being arranged in a matrix; display electrodes provided in the areas partitioned by the scanning lines and the signal lines; thin film transistors (TFTs) provided in the areas partitioned by the scanning lines and the signal lines and connected to the display electrodes; shield electrodes covering the respective scanning lines at least partly; and an insulating film disposed between the shield electrodes and the scanning lines. The shield electrodes are electrically connected to the DC power supply.

Abstract: A plasma processing apparatus includes a plurality of plasma processing units. Each of the plasma processing units has a plasma excitation electrode, a radiofrequency generator connected to the plasma excitation electrode, and a matching circuit which matches the impedance between the radiofrequency generator and the plasma processing unit. The absolute value |&Dgr;RA| of the difference &Dgr;RA between the AC resistance RA0 at a time t0 and the AC resistance RA1 at a later time t1 and the absolute value |&Dgr;RB| of the difference &Dgr;RB between the AC resistance RB0 at the time t0 and the AC resistance RB1 at the later time t1 are maintained at a value less than an upper limit. Based on these values, whether or not the plasma processing apparatus which is reassembled or used at a user site maintains a required level of performance is evaluated.

Abstract: A plasma processing apparatus has a plasma processing chamber having a plasma excitation electrode, a radiofrequency generator connected to the plasma excitation electrode, and a matching circuit for matching the impedance between the plasma processing chamber and the radiofrequency generator. The loss capacitance CX1 at a later time t1 after delivery is measured between the plasma excitation electrode and ground potential positions which are grounded. The performance is evaluated by whether or not the loss capacitance CX1 is less than 26 times the plasma electrode capacitance Ce1 at the later time t1 between the plasma excitation electrode and a counter electrode which cooperate with each other.

Abstract: In a liquid-crystal display apparatus, each color pixel has three dots enclosed by adjacent signal lines and adjacent scanning lines. Each dot is provided with a switching device and a dot electrode. Each color pixel is provided with three display electrodes electrically connected to three dot electrodes through contact holes passing through an insulation layer. The display electrodes are disposed so as to overlap with the three dot electrodes. Each of the display electrodes is electrically connected to only one of the three dot electrodes. Each of the dot electrodes is electrically connected to only one of the display electrodes.

Abstract: A plasma processing apparatus includes a chassis accommodating an impedance matching circuit. The impedance matching circuit is placed between an RF generator and a plasma excitation electrode. Magnetic probes for detecting a magnetic field generated at a slit in a sidewall of the chassis are placed axisymmetrically. The plasma processing apparatus also includes a feedback circuit for feeding back to an RF generator or a matching circuit so that a current detected by a current-detecting unit maintains a predetermined value.