Abstract: A plasma processing apparatus has a plasma processing chamber that accommodates an electrode pair of a plasma excitation electrode for exciting plasma and a susceptor electrode facing the plasma excitation electrode, a workpiece to be treated being placed therebetween. The apparatus also has a chassis that accommodates an impedance matching circuit, provided in the middle of a supply path for feeding RF power from an RF generator to the plasma excitation electrode, for matching the impedance between the RF generator and the plasma processing chamber. In the chassis, impedances are axisymmetrically equal at a predetermined frequency with respect to the direction of a high-frequency current returning to the RF generator. The matching circuit has at least two inductance coils connected in parallel.

Abstract: An active matrix type liquid display includes a main display and a sub-display having pixel areas. The pixel areas in the sub-display are different in size from the pixel areas in the main display. The active matrix type liquid display is configured so that the ratio of minimum space to maximum space is equal to or greater than one. The minimum space is the distance that separates the nearest ends of one pixel electrode and one gate electrode. The maximum space is the distance between opposite surfaces of paired electrodes.

Abstract: A plasma processing apparatus includes a radio frequency generator, a plasma processing chamber, a matching circuit for impedance matching between the radio frequency generator and the plasma processing chamber, and matching circuit adjusting means for matching the output impedance of the matching circuit to the impedance of the plasma processing chamber in a nondischarge state. The matching circuit is a product matching circuit that is produced based on a circuit constant of an adjusting matching circuit. The adjusting matching circuit is disposed between the radio frequency generator and the plasma processing chamber for a required plasma treatment and the circuit constant is determined by impedance matching between the radio frequency generator and the plasma processing chamber so that the adjusting matching circuit matches the load impedance of the plasma processing chamber.

Abstract: A plasma processing apparatus of the present invention includes a matching circuit for impedance matching between a radio-frequency generator and a plasma processing chamber, and one or a plurality of impedance converting circuits provided between the matching circuit and the radio-frequency generator. The impedance converting circuit converts an impedance to decrease a difference in impedance to be matched by the matching circuit, thereby decreasing a change in the output impedance with a moving amount of a capacitance control of one of variable passive elements of the matching circuit, such as a load capacitor and a tuning capacitor. Therefore, a change in the impedance of the plasma processing chamber can be finely controlled.

Abstract: A plasma processing unit has two electrodes for exciting a plasma, a plasma processing chamber, an RF generator, a matching circuit for performing impedance matching between the plasma processing chamber and the RF generator, a feeder that connects an output terminal of the matching circuit to one of the electrode, and a supplier that connects the RF generator to an input terminal of the matching circuit. The feeder is arranged to decrease the average density per unit volume of the RF power supplied from the RF generator as the RF power flows from the output terminal of the matching circuit to the electrode. The section of the plasma processing unit that is DC-grounded has a surface provided with a low-resistance portion. The supplier or the feeder is fixed on a floor using RF impedance adjustors so as to prevent the RF impedance therein from changing.

Abstract: A plasma processing apparatus has a plasma processing chamber, a radiofrequency generator, and an matching circuit. The plasma processing chamber includes a plasma excitation electrode and a susceptor electrode for exciting a plasma. The radiofrequency generator is connected to plasma excitation electrode. The matching circuit matches the impedance between the plasma processing chamber and the radiofrequency generator. A capacitance which is 26 times a plasma electrode capacitance Ce between the plasma excitation electrode and the susceptor electrode is greater than a loss capacitance CX between the plasma excitation electrode and ground potential positions which are DC-grounded.

Abstract: Opposed electrodes are separately provided correspondingly to a main display area and a sub display area in an active-matrix liquid-crystal display apparatus. The most-appropriate voltages are applied to the opposed electrode corresponding to the main display area and to the opposed electrode,corresponding to the sub display area, according to the size of each pixel zone disposed in each display area.

Abstract: A plasma processing apparatus has a plasma processing chamber having a plasma excitation electrode, a radiofrequency generator connected to the plasma excitation electrode, and a matching circuit for matching the impedance between the plasma processing chamber and the radiofrequency generator. The loss capacitance CX1 at a later time t1 after delivery is measured between the plasma excitation electrode and ground potential positions which are grounded. The performance is evaluated by whether or not the loss capacitance CX1 is less than 26 times the plasma electrode capacitance Ce1 at the later time t1 between the plasma excitation electrode and a counter electrode which cooperate with each other.

Abstract: The performance of a plasma processing apparatus which is disassembled, transferred, and reassembled is evaluated. The plasma processing apparatus has a plasma processing chamber having an electrode for exciting a plasma, a radiofrequency generator connected to the electrode, and an impedance matching circuit for performing the impedance matching between the plasma processing chamber and the radiofrequency generator. The performance of the apparatus is evaluated whether or not three times the first series resonant frequency of the plasma processing chamber is larger than the power frequency supplied to the plasma processing chamber.

Abstract: A plasma processing apparatus includes a plurality of plasma processing units. Each of the plasma processing units has a plasma excitation electrode, a radiofrequency generator connected to the plasma excitation electrode, and a matching circuit which matches the impedance between the radiofrequency generator and the plasma processing unit. The absolute value |&Dgr;RA| of the difference &Dgr;RA between the AC resistance RA0 at a time t0 and the AC resistance RA1 at a later time t1 and the absolute value |&Dgr;RB| of the difference &Dgr;RB between the AC resistance RB0 at the time t0 and the AC resistance RB1 at the later time t1 are maintained at a value less than an upper limit. Based on these values, whether or not the plasma processing apparatus which is reassembled or used at a user site maintains a required level of performance is evaluated.

Abstract: The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster as compared with conventional plasma equipment, and the film quality is high. Metal plates AC short between a chamber wall and a shield of an electrode of the same DC potential as the chamber.

Abstract: A plasma processing apparatus has a plasma processing chamber, a radiofrequency generator, and an matching circuit. The plasma processing chamber includes a plasma excitation electrode and a susceptor electrode for exciting a plasma. The radiofrequency generator is connected to plasma excitation electrode. The matching circuit matches the impedance between the plasma processing chamber and the radiofrequency generator. A capacitance which is 26 times a plasma electrode capacitance Ce between the plasma excitation electrode and the susceptor electrode is greater than a loss capacitance CX between the plasma excitation electrode and ground potential positions which are DC-grounded.

Abstract: A plasma processing apparatus including a plasma processing chamber having a plasma excitation electrode for exciting a plasma, a radiofrequency generator for supplying a radiofrequency voltage to the electrode, a radiofrequency feeder connected to the electrode, and a matching circuit having an input terminal and an output end. The input terminal is connected to the radiofrequency generator and the output end is connected to an end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. A frequency which is three times a first series resonant frequency f0 of the plasma processing chamber, which is measured at the end of the radiofrequency feeder, is larger than a power frequency fe of the radiofrequency waves.

Abstract: The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster as compared with conventional plasma equipment, and the film quality is high. Metal plates AC short between a chamber wall and a shield of an electrode of the same DC potential as the chamber.

Abstract: There are provided a method and an apparatus for removing electrostatic charges from high resistivity liquid. An insulating film is formed on the surface of a conductive element which is in contact with the high resistivity liquid wherein the insulating film has such a thickness that a tunneling current may flow through the insulating film, thereby preventing the highly purified high resistivity liquid from being contaminated, as well as from becoming acid. Thus, objects to be treated with the high resistivity liquid become free of electrostatic charges without any contamination.

Abstract: A plasma processing apparatus is provided which does not require replacement of a band eliminator according to a frequency used, which is capable of performing chamber cleaning without replacing a resonance circuit, and which is capable of performing plasma cleaning of the inside of the chamber without using a bellows. The plasma processing apparatus includes a resonance circuit (band eliminator) for causing series resonance with a microwave circuit formed of at least a susceptor electrode and a processing chamber in order to trap plasma between a plasma excitation electrode and the susceptor electrode when the surface of a workpiece placed on the susceptor electrode is processed by plasma generated between the plasma excitation electrode and the susceptor electrode, which are provided inside the processing chamber; and for causing parallel resonance with the microwave circuit in order to diffuse plasma inside the processing chamber when performing plasma cleaning.

Abstract: In a plasma processing apparatus, in a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode, one of the two electrodes which form a tuning capacitor also serves as the plasma excitation electrode. Alternatively, in a plasma processing apparatus, the side wall of a housing made from an electrically conductive member and accommodating a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode and a feeder for supplying high-frequency electric power from the high-frequency power source to the plasma excitation electrode through the matching circuit is formed not in parallel to the feeder.

Abstract: A plasma processing apparatus for stably and uniformly performing various kinds of processing by preventing unnecessary plasma discharge in the processing comprises a susceptor pin for supporting a substance to be processed, the susceptor pin being disposed to pass through a hole formed to a susceptor, projecting from the upper surface of the susceptor when the susceptor falls and falling by its own weight when the susceptor rises so as to be buried in the hole, and a guide for guiding the rising and falling directions of the susceptor pin, wherein the susceptor pin and the guide are composed of ceramics.

Abstract: A portable facsimile equipment in which document data to be transmitted can be displayed on an LCD display. When it is desired for a communication module to transmit document data obtained through a document module or a scanner module, the document data to be transmitted can be displayed on the LCD display. When it is desired to display image data read out by a scanner and stored in a RAM on the LCD display; the image data having a resolution of 8 lines/mm read out by the scanner and stored in the RAM is converted to data having a resolution of 3 lines/mm for display thereof on the LCD display. Further, the communication module performs its communication with a wired line through a modular connector provided at a side of an LCD board, and the received information is displayed on the LCD display.

Abstract: A thin film transistor device with its leakage current being controlled is provided. With such a thin film transistor device incorporated, a liquid crystal display apparatus presents a high-contrast image at a reduced power consumption. The thin film transistor is formed on an insulating substrate. The gate electrode of the transistor is electrically floating gate electrode, which is capacitance coupled to one or more input electrodes. The liquid crystal display apparatus incorporates the thin film transistor in its switching element and/or driving circuit.