Abstract: A measuring apparatus includes a stage on which an object to be measured is placed, an insulating base plate, a probe fixed on the insulating base plate, a measuring unit which measures an electrical characteristic of the object to be measured through the probe, a side wall part having such a shape as to surround the probe and smaller in width than the stage, and a supply tube through which an insulating liquid is supplied, wherein when an electrical characteristic of the object to be measured is measured, the stage, the side wall part and the insulating base plate form a measurement region surrounding the object to be measured, and the insulating liquid is applied from the supply tube to the object to be measured in the measurement region.

Abstract: A measuring apparatus includes a measuring unit for measuring an electrical characteristic of a measurement object by applying an electrical signal, and a discharge detection unit connected to the measuring unit, the discharge detection unit obtaining an electrical signal value that is the value of the electrical signal applied to the measurement object, wherein if the electrical signal value is smaller than a predetermined reference value, the discharge detection unit issues a discharge alarm to the outside when a difference value between the electrical signal value and the reference value becomes larger than a predetermined first comparison value after the difference value becomes smaller than the first comparison value, and wherein the reference value is set equal to or larger than the maximum of the electrical signal value when no electric discharge occurs.

Abstract: A semiconductor evaluation apparatus includes a jig for evaluation and a probe substrate. The jig for evaluation is provided such that a plurality of semiconductor devices can be placed thereon. The probe substrate is provided so as to face the jig for evaluation, and includes a contact probe. The jig for evaluation includes a plurality of housing portions divided by a frame portion such that the plurality of semiconductor devices can be separately placed on the plurality of housing portions, respectively. The semiconductor evaluation apparatus is configured such that the contact probe can be brought into contact with a plurality of elements in the state where a space is provided by bringing the frame portion and the probe substrate in proximity to each other. In this space, each of the plurality of semiconductor devices is placed between a corresponding one of the plurality of housing portions and the probe substrate.

Abstract: A device includes a jig having a plate with through-holes formed therein and also having a frame formed on the plate so as to be able to accommodate a plurality of semiconductor chips in spaced relationship, a foreign matter capture member having a first charge section with a first flat surface and a second charge section with a second flat surface, the second charge section being insulated from the first charge section, charging means for positively charging the first flat surface and negatively charging the second flat surface, and sliding means for causing either the jig or the foreign matter capture member to slide relative to the other in such a manner that the through-holes of the jig are spaced a predetermined distance from the first and second flat surfaces. The through-holes are formed in different regions defined and surrounded by the frame.

Abstract: An apparatus for evaluating a semiconductor device includes: a chuck stage; an insulating substrate; a plurality of probes; a temperature adjustment unit; an evaluation/control unit; and a probe position/temperature inspection device including an inspection plate, a thermo-chromic material, a photographing unit, and an image processing unit. The photographing unit photographs a color-change image of the thermo-chromic material in a state in which distal end portions of the plurality of probes are pressed against the upper surface of the inspection plate. The image processing unit performs image processing to the color-change image to calculate in-plane positions and temperatures of the distal end portions of the plurality of probes.

Abstract: An evaluation apparatus for a semiconductor device includes: a chuck stage that has a surface on which a plurality of probe holes are formed and sucks a semiconductor device; and a plurality of in-chuck probes that have first ends which are inserted into the respective probe holes, and second ends which protrude from the surface of the chuck stage, and come into contact with an arrangement surface of the semiconductor device arranged in the chuck stage, wherein a height protruding from the surface of the chuck stage of at least one of the in-chuck probes is different from a height protruding from the surface of the chuck stage of the other in-chuck probe.

Abstract: A probe position inspection apparatus capable of inspecting the position of contact portions of respective probe tips easily and accurately, an apparatus for inspecting a semiconductor device, and a method of inspecting a semiconductor device are provided. The probe position inspection apparatus includes a transparent plate, a camera for taking an image of one surface of the transparent plate, and a pressure passive member covering the other surface of the transparent plate. The tip of a probe for use in evaluation of a semiconductor device is pressed against the other surface of the transparent plate, with the pressure passive member therebetween. The probe position inspection apparatus further includes an image processor for processing the image taken by the camera to detect the position of the probe in the plane of the transparent plate.

Abstract: An apparatus for evaluating a semiconductor device includes: a chuck stage for fixing a semiconductor device; an insulating substrate; a plurality of probes fixed to the insulating substrate; a temperature adjustment unit adjusting temperatures of the plurality of probes; an evaluation/control unit causing a current to flow into the semiconductor device through the plurality of probes to evaluate an electric characteristic of the semiconductor device; an inspection plate having a front surface and a rear surface opposite to each other; a thermal image measurement unit acquiring a thermal image of the inspection plate when distal end portions of the plurality of probes are pressed against the front surface; and a thermal image processing unit performing image processing to the thermal image to obtain in-plane positions and temperatures of the distal end portions of the plurality of probes.

Abstract: A connector includes a first connector that includes a first terminal; and a second connector that includes a second terminal and is configured to be mated to the first connector, wherein in a state where the first connector and the second connector are mated, the second terminal holds the first terminal and accommodates a leading end part of the first terminal, first metal plating is formed above a portion of the first terminal from a part of the first terminal to a base end part of the first terminal, the part being configured to be held by the second terminal, and the leading end part of the first terminal accommodated in the second terminal is exposed from the first metal plating. The first connector is preferably coupled to a first board and the second connector is coupled to a second board.

Abstract: A torque sensor includes: a base portion fixed to a metal shaft having a rod shape as a measurement object of strain; a strain detection element of a surface acoustic wave type which is arranged in the base portion, and detects the strain of the metal shaft (10) through the base portion; and a fixing portion that is arranged between the base portion and the strain detection element, and fixes the strain detection element to the base portion.

Abstract: A measurement device includes a stage for carrying an object to be measured, an insulating board having a through hole, a probe fixed on the undersurface of the insulating board, a side wall section in a shape surrounding the probe, a pressurizing section provided on the top surface of the insulating board, the pressuring section supplying a gas below the insulating board via the through hole, and a measurement section electrically connected to the probe to control the pressurizing section, wherein the measurement section measures an electric property of the object to be measured via the probe in a state where the pressurizing section is controlled to supply a gas to a measurement space located below the insulating board to increase a pressure in the measurement space, the measurement space surrounded by the stage, the side wall section, and the insulating board.

Abstract: A semiconductor device assessment apparatus that electrically assesses a semiconductor device formed on a semiconductor substrate includes a holding unit having a surface to hold the semiconductor substrate thereon, and a detection unit to detect irregularity on the surface of the holding unit. The holding unit on the surface includes a plurality of grooves formed such that when the semiconductor substrate is held on the surface, the grooves overlap a periphery of the semiconductor substrate and also have a portion located outer than the periphery of the semiconductor substrate.

Abstract: A temperature detecting probe as a contact-probe type temperature detector includes a plunger portion contactable with a semiconductor device as an object to be measured, a spring member placed on a base end portion of the plunger portion, a barrel portion pressing the plunger portion the semiconductor device side with the spring member interposed therebetween, and a thermocouple as a temperature measuring portion detecting a temperature of the semiconductor device.

Abstract: A connector includes: a press-fit pin wherein the press-fit pin includes a conductive press-fit portion configured to be press-fitted into a through hole formed in a substrate, and a non-conductive guide pin portion extending from a front end portion of the press-fit portion, the guide pin portion being configured to be inserted into the through hole.

Abstract: A purpose of the present invention is to provide a semiconductor device that can restrain occurrence of partial discharge in evaluation of electric characteristics and can carry out failure analysis from the upper side of a measurement object. A semiconductor device according to the present invention includes: at least one electrode; a protective layer having at least one opening part provided such that a portion of the electrode is exposed at the opening part, and being formed to cover the other portion of the electrode excluding the portion of the electrode exposed at the opening part, the protective layer being insulative; and a conductive layer formed so as to cover the protective layer and the opening part and be directly connected to the electrode at the opening part.

Abstract: A purpose of the present invention is to provide a technique capable of suppressing an electric discharge during evaluation. A semiconductor device includes: a semiconductor base body having an element region and a terminal region; a plurality of electrode pads disposed in an area that is in the element region of the semiconductor base body and is separated from the terminal region, an insulating protection film having an opening provided above each of the electrode pads; and a plurality of conductive layers disposed on the protection film and electrically connected to the plurality of electrode pads, respectively, through the opening. In a planar view, each of the conductive layers is extended to the terminal region or the vicinity of the terminal region.

Abstract: In a semiconductor device, an element forming region formed with a semiconductor element for controlling a current is defined on a surface of a semiconductor substrate. A termination region is defined so as to surround the element forming region. In a gate electrode, a probe-contacting region and a wire region are defined. The probe-contacting region and the wire region are separated by an insulator formed on a surface of the gate electrode. Thus, the surface of the probe-contacting region and the surface of the wire region are located at the same height.

Abstract: A multi-wire electrical discharge machining system for slicing a workpiece into a thin leaf at intervals of a plurality of wires arranged together causes the wires arranged together to travel in the same direction and includes a power feed contact configured to collectively comes into contact with the traveling wires, a machining power supply portion configured to supply a machining power supply to the power feed contact, and an electrical discharge portion configured to electrically discharge a machining power supply in which the traveling wires comes into contact with the power feed contact to collectively supply power to the traveling wires to the workpiece, in which a resistance between the machining power supply portion and the power feed contact is smaller than a resistance between the power feed contact and the electrical discharge portion.

Abstract: There is provided a laser processing method using a laser processing apparatus including a laser beam source for outputting a laser beam including a plurality of wavelength components, a collimating lens for receiving the laser beam, and a focusing lens for receiving the laser beam collimated by the collimating lens, the laser processing method including the step of: irradiating a material to be processed with the laser beam focused by the focusing lens in the laser processing apparatus. In the step of irradiating the material to be processed with the laser beam, positions of the collimating lens and the focusing lens are adjusted, and a wavefront shape of the laser beam received by the focusing lens is adjusted, thereby adjusting a size of a focusing area constituted by a plurality of focuses corresponding to the plurality of wavelength components of the laser beam focused by the focusing lens.

Abstract: A mechanism capable of decreasing wires which are not appropriately supplied with power and performing the electrical discharge machining high in uniformity between multiple wires. A wire electrical discharge machining system configured to slice a workpiece at an interval of wires arranged side by side at equally spaced intervals causes the wire to travel in the same direction and includes a power feed contact configured to collectively supply a machining power supply to a plurality of the traveling wires, in which two adjacent power feed contacts respectively come into contact with the plurality of the wires supplied with the machining power supply and arranged without being aligned in the direction vertical to the direction in which the wire travels.