Abstract: A semiconductor apparatus includes a semiconductor device having circuit electrodes aligned centrally of the semiconductor apparatus. A first electrically insulating layer is formed on said semiconductor device with said circuit electrodes being exposed from said first insulating layer. A second electrically insulating layer is formed on said first insulating layer, and external connection terminals are formed on said second insulating layer. A wiring is formed on said second insulating layer to electrically connect said external connect terminals to said circuit electrodes of said semiconductor device, and a third electrically insulating layer is formed on said second insulating layer and on said wiring. Particles are provided in the second insulating layer to control a shape of said second insulating layer.

Abstract: The corrosion of a pad portion on TEG is prevented, and the wettability of a solder and the shear strength after solder formation of a pad portion of an actual device are improved. A third layer wiring M3 on a chip area CA of a semiconductor wafer and a third layer wiring M3 on a scribe area SA are respectively comprised of a TiN film M3a, an Al alloy film M3b, and a TiN film M3c. A second pad portion PAD2 as the top of a rewiring 49 on the chip area CA is cleaned. Alternatively, an Au film 53a is formed thereon by an electroles splating method. Further, after the formation of the Au film 53a, a retention test is carried out. Thereafter, further, an Au film 53b is formed and a solder bump electrode 55 is formed. As a result, it is possible to prevent the corrosion of a first pad portion PAD1 of the third layer wiring M3 on the scribe area SA which is TEG due to a plating solution or the like by the TiN film M3c.

Abstract: The object of the present invention is to realize a semiconductor device enabling a flip chip connection without use of underfill.