Abstract: In an optical disk apparatus, after chucking an optical disk, the optical disk apparatus defers the start of the rotation of the optical disk, and measures the focusing drive voltage at two points, i.e., a point near a center of the optical disk and a point near an outer edge of the optical disk. Then, based on the measured values, the optical disk apparatus determine the angle at which the optical disk is slanted. Therefore, when the optical disk has been chucked inappropriately, the chucking state can be determined without rotating the optical disk, and scratching of the optical disk and damage to the optical disk apparatus can be prevented.

Abstract: In a self-propelled cleaner 10, after distance data from an ultrasonic ranging-sensor 31 is obtained, a judgment is made as to whether the distance data is below an approaching limit value. If the distance data is below the approaching limit value, travel of a body is stopped. If the distance data is not the approaching limit value, distance data from light ranging-sensors 32R, 32L are obtained. If distance data is below the approaching limit value, and the travel of the body is stopped, so that even if a target is a target which can not be subjected to precise ranging by the ultrasonic ranging-sensor only, it can be subjected to the precise ranging by using the light ranging-sensors. Thus it is possible to increase the number of targets capable of being subjected to the precise ranging and prevent the body from colliding against the obstacle.

Abstract: A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.

Abstract: A dry etching method involves plasma etching an organic anti-reflecting coating film through a mask layer made of photoresist and having a predetermined pattern by using an etching gas of CF4 and O2. The method allows an organic anti-reflecting coating film to be etched such that the etched film exhibits a side wall portion having a better shape as compared with that formed by a conventional technique.

Abstract: An atmospheric transfer chamber, connected to an object processing chamber for processing a target object by using a plasma of a halogen-based gas, for transferring the target object therein, the atmospheric transfer chamber includes a dehumidifying unit for dehumidifying air in the atmospheric transfer chamber. The dehumidifying unit includes a desiccant filter, a cooling unit for cooling the air introduced into the atmospheric transfer chamber, and an air conditioner. The atmospheric transfer chamber is connected to a reaction product removal chamber for removing reaction products of a halogen-based gas attached to the target object, wherein halogen in reaction products attached to the target object is reduced.

Abstract: A fine pattern forming method includes the first step of depositing a plasma reaction products on a sidewall of a patterned mask layer to increase a pattern width thereof, the second step of etching a first etching target layer by using as a mask the mask layer, the pattern width of which has been increased, the third step of filling with a mask material a space formed in the etched first etching target layer, the fourth step of etching the etched first etching target layer leaving the mask material filling the space, and the fifth step of etching a second etching target layer by using a remaining mask material as a mask.

Abstract: A plasma processing method for performing a plasma process on a target object placed in a chamber includes a first plasma process of turning a gas containing at least a halogen element into plasma to generate first plasma, thereby processing the target object; a second plasma process, subsequent to the first plasma process, of supplying a gas containing oxygen into the chamber to generate second plasma, thereby processing the chamber and the target object; and a third plasma process, subsequent to the second plasma process, of turning a gas containing at least fluorine into plasma to generate third plasma, thereby processing the target object.

Abstract: A plasma etching method for etching an object to be processed, which has at least an etching target layer and a patterned mask layer formed on the etching target layer, to form a recess corresponding to a pattern of the mask layer in the etching target layer, includes a first plasma process of forming deposits on the etching target layer at least around a boundary between the etching target layer and the mask layer in an opening portion constituting the pattern of the mask layer, and a second plasma process of forming the recess by etching the etching target layer after the first plasma process. An edge portion of an upper sidewall constituting the recess is rounded off in the second plasma process.

Abstract: Disclosed herein is a self-propelled traveling apparatus capable of precisely determining whether a human is sleeping or awake, thereby eliminating useless alarms. When a human is detected by one of four pyroelectric sensors, the body of the self-propelled traveling apparatus is turned so that a CCD camera faces the direction of a pyroelectric sensor that detected the human, and takes images of the human. Then, based on the imaging signal generated by the CCD camera, the movement and posture of the human is detected. When it is determined that the human is at rest and lying down, the human is considered sleeping and an alarm is sounded at a preset time.

Abstract: Disclosed herein is a travel device with a security function, which can always monitor a suspicious person. When charging of a battery is performed, electric power supplied from a charger device is supplied to both the buttery and a suspicious person-detecting section, and four pyroelectric sensors of the suspicious person-detecting section are activated during the charging of the battery and perform detection of a suspicious person. Thus, it is possible to detect a suspicious person during the charging and it is therefore possible to always monitor the suspicious person.

Abstract: An etching method capable of controlling the film thickness of a hard mask layer uniformly is provided. A plasma etching is performed on a native oxide film by using an etching gas containing, for example, CF4 and Ar while a thickness of a silicon nitride film is being monitored and the etching is finished when the thickness of the silicon nitride film reaches a predetermined value. Then, a plasma etching is performed on a silicon substrate by employing an etching gas containing, for example, Cl2, HBr and Ar and using the silicon nitride film as a mask while a depth of a trench is being monitored and the etching is finished when the depth of the trench reaches a specified value.

Abstract: A self-propelling cleaner 1 performs dust removal processing in which a comb is brought close to a rotary brush with prescribed timing and dust is removed from the rotary brush. In the dust removal processing, the comb is slid in such a direction as to come closer to the brush, even dust that is stuck to the base portions of bristles of the rotary brush can be removed. A self-propelling cleaner is provided that is free of an event that it performs cleaning in a state that a large amount of dust is stuck to the rotary brush.

Abstract: A plasma processing method and a post-processing method can certainly prevent corrosion not only in a processing chamber but also in a transfer system. The plasma processing method for performing a plasma process on an object to be processed in a chamber includes a first plasma process for processing the object to be processed by a first plasma that is generated by plasmarizing a gas containing at least a halogen element; a second plasma process for processing the chamber and the object to be processed by supplying an oxygen-containing gas in the chamber to generate a second plasma after the first plasma process; and a third plasma process for processing the object to be processed after the second plasma process by using a third plasma that is generated by plasmarizing a gas containing at least nitrogen and hydrogen.

Abstract: An etching method of the present invention includes a first and a second process. In the first process, pattern widths of a pre-patterned mask layer are increased by depositing plasma reaction products on sidewalls of the mask layer. In the second process, a layer to be etched is etched by using the mask layer as a mask having increased the pattern widths. Therefore, mask layers having different pattern densities exist in the same wafer and pattern widths of mask layers patterned through a photolithography process are uneven according to pattern densities, each pattern width of the mask layers can be made uniform. Accordingly, the pattern widths of the layer can be made uniform over an entire wafer.

Abstract: A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.

Abstract: A dry etching method involving etching an organic antireflection film 104 through a mask layer 105 having a predetermined pattern, characterized in that the organic antireflection film is etched by the plasma etching using an etching gas comprising CF4 and O2. The method allows an organic antireflection film to be etched in such a manner that the etched film exhibits a sidewall portion having a better shape as compared to that formed by a conventional technique.

Abstract: In an optical disk apparatus, after chucking an optical disk, the optical disk apparatus defers the start of the rotation of the optical disk, and measures the focusing drive voltage at two points, i.e., a point near a center of the optical disk and a point near an outer edge of the optical disk. Then, based on the measured values, the optical disk apparatus determine the angle at which the optical disk is slanted. Therefore, when the optical disk has been chucked inappropriately, the chucking state can be determined without rotating the optical disk, and scratching of the optical disk and damage to the optical disk apparatus can be prevented.

Abstract: An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.