Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a photoacid generator A that generates an acid represented by General Formula (I), the acid having a pKa of ?1.00 or more; one or more selected from the group consisting of a photoacid generator B that generates an acid having a pKa larger than that of an acid generated from the photoacid generator A by 1.00 or more, and a nitrogen-containing compound C having a pKa of a conjugate acid thereof larger than that of the acid generated from the photoacid generator A by 1.00 or more; and an acid-decomposable resin, in which in a case where the actinic ray-sensitive or radiation-sensitive resin composition includes a photoacid generator D that generates an acid having a pKa of less than ?1.00, a ratio of the number of moles of the photoacid generator A to the number of moles of the photoacid generator D in the composition, is 1.0 or more.

Abstract: According to an actinic ray-sensitive or radiation-sensitive resin composition containing a compound (C) represented by a formula (Q1) below and an acid-decomposable resin (A), in the formula (Q1), Ar1 represents an aromatic group, W1 represents an organic group, X1 represents a linking group including at least one selected from the group consisting of —O—, —S—, —C(?O)—, —S(?O)—, and —S(?O)2—, Y1 represents an electron-withdrawing group, Z1 represents a halogen atom, M+ represents a cation, each of k1 and k2 represents an integer of 1 or more, and the group represented by —X1—W1— does not include *1—O—C(?O)—*2, *1 and *2 represent bonding sites, and *1 is a bonding site to Ar1, formation of a pattern excellent in CDU in ultrafine pattern formation even after a lapse of time from the preparation is enabled.

Abstract: According to an actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) including a repeating unit (a1) having a partial structure in which a phenolic hydroxy group is protected with a structure represented by a formula (1) below, a pattern in which generation of defects is suppressed can be formed: wherein X represents a halogen atom or an electron-withdrawing group, R1 represents a hydroxy group or an organic group, k represents an integer of 0 to 3, n represents an integer of 0 to (4+2k), m represents an integer of 1 to (5+2k), satisfying a relationship of 1?(n+m)?(5+2k), and a plurality of R1's and X's may be the same or different according to an integer of n and m respectively, and * represents a bonding site to an oxygen atom of the phenolic hydroxy group.

Abstract: A first object of the present invention is to provide an active light ray sensitive or radioactive ray sensitive resin composition having excellent sensitivity and forming a pattern with excellent resolution. A second object of the present invention is to provide a resist film, a pattern-forming method, and a method for manufacturing an electronic device relating to the active light ray sensitive or radioactive ray sensitive resin composition.

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern thus formed has excellent LER and collapse suppressing ability. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a compound that generates an acid upon irradiation with actinic rays or radiation, and a resin whose polarity increases by the action of an acid, in which the resin includes a repeating unit represented by General Formula (B-1), and a content of the repeating unit represented by General Formula (B-1) is 5% to 70% by mass with respect to all the repeating units in the resin.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition comprising a compound (Q) represented by a formula (I-1) below and a resin having a polarity that increases through decomposition by an action of an acid, wherein, in the formula (I-1), R1 represents a hydrocarbon group having at least one or more fluorine atoms, R2 represents an aromatic group, Y represents —SO2— or —CO—, and X+ represents a counter cation.

Abstract: The actinic ray-sensitive or radiation-sensitive resin composition includes a resin, and an ionic compound having, in at least one of a cationic moiety or an anionic moiety, a group represented by —SF4R provides a very good pattern profile in the formation of an ultrafine pattern such as a line-and-space pattern of 25 nm or less, and a hole pattern having a hole diameter of 25 nm or less.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition including: a compound (N) having an anion and a cation represented by a formula (N1) below, and a resin (A) that is decomposed by an action of an acid to provide increased polarity, wherein, in the formula (N1), RN1, RN2, and RN3 each independently represent a specified group, k1 to k6 each independently represents a specified integer, a plurality of RN1's may be the same or different, RN4, RN5, and RN6 each independently represent a specified substituent, and at least two among the aromatic rings in the formula (N1) may be bonded together via a single bond or a linking group.

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition including a resin having a pentafluorosulfanyl group and a solvent, a method for manufacturing the composition, an actinic ray-sensitive or radiation-sensitive film using the composition, a pattern forming method using the composition, and a method for manufacturing an electronic device using the composition.

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having an excellent pattern line width roughness (LWR). In addition, another object of the present invention is to provide: a resist film, a pattern forming method, and a method for manufacturing an electronic device, each of which uses the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is excellent in LER performance and a collapse suppressing ability. Furthermore, the present invention provides a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes an acid-decomposable resin having a repeating unit represented by General Formula (1), and a compound that generates an acid upon irradiation with actinic rays or radiation.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a compound represented by General Formula (I) and an acid-decomposable resin.

Abstract: According to the present invention, an actinic ray-sensitive or radiation-sensitive resin composition including a resin P having a repeating unit represented by General Formula (P1) and a compound that generates an acid having a pKa of ?1.40 or more upon irradiation with actinic rays or radiation; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the composition, are provided. Mp represents a single bond or a divalent linking group. Lp represents a divalent linking group. Xp represents O, S, or NRN1. RN1 represents a hydrogen atom or a monovalent organic group. Rp represents a monovalent organic group.

Abstract: The present invention provides a pattern forming method that enables the formation of a pattern excellent in resolution and evenness and a method for producing an electronic device. The pattern forming method according to the present invention includes a resist film-forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition that undergoes an increase in the degree of solubility in an organic solvent due to action of exposure, acid, base, or heating, an exposure step of exposing the resist film, and a developing step of developing the exposed resist film with a developer including an organic solvent. The organic solvent includes an ester-based solvent having 6 or less carbon atoms and a hydrocarbon-based solvent.

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition that provides a pattern having little variation in the line width even if the time from the end of exposure treatment to the start of development treatment (waiting time before development) varies. Another object of the present invention is to provide a resist film, a pattern forming method, and a method for producing an electronic device that are related to the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition according to the present invention satisfies a predetermined requirement X or Y.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin including a repeating unit represented by Formula (1) and capable of increasing a polarity by an action of an acid.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is excellent in LER performance and a collapse suppressing ability. Furthermore, the present invention provides a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin having a polarity that increases by the action of an acid; and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the resin has a repeating unit represented by General Formula (B-1).

Abstract: A first object of the present invention is to provide a pattern forming method in which even if the time from the end of exposure treatment to the start of development treatment (waiting time before development) varies, a variation in the line width of a pattern to be formed is small. A second object of the present invention is to provide a method for producing an electronic device, the method relating to the pattern forming method. A third object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition and a resist film that are suitable for the pattern formation. The pattern forming method according to the present invention includes a step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition, a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent. The composition satisfies a requirement A1 or a requirement A2 below.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound represented by general formula (S1) and an acid decomposable resin. In the general formula (S1), Q1, Q2, Q3, Q4, and Q5 each independently represent a hydrogen atom or a substituent, provided that at least one of Q1, Q2, Q3, Q4, or Q5 represents a substituent including an aryloxy group represented by general formula (QR1), Lq1 represents a single bond or a divalent linking group; and M+ represents an organic cation. In the general formula (QR1), G1, G2, G3, G4, and G5 each independently represent a hydrogen atom or a substituent, provided that at least one of G1, G2, G3, G4, or G5 represents a substituent including an ester group; and * represents a bonding position.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern having an excellent pattern collapse suppressing property and excellent LWR performance can be obtained. In addition, the present invention also provides a resist film, a pattern forming method, and a method for manufacturing an electronic device, each regarding the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a resin whose solubility in a developer is changed by the action of an acid, a photoacid generator represented by General Formula (b1), and a solvent, in which the photoacid generator represented by General Formula (b1) is a compound that generates an acid having a pka of 1.