Abstract: A method for producing an electronic device includes the pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development. Specifically, provided is a pattern forming method, including a film forming step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of irradiating the film, and a development step of developing the film using a developer containing an organic solvent, in which the composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation, the content of Si atoms in the resin is 1.0 to 30 mass %, and the content of the resin in the total solid content of the composition is 20 mass % or more.

Abstract: Provided are a pattern forming method including a step of applying a composition for forming an upper layer film, containing a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A1) to (A4) described in the specification onto a resist film to form an upper layer film, a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent; a resist pattern formed by the pattern forming method; a method for manufacturing an electronic device, including the pattern forming method; and the composition for forming an upper layer film.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).

Abstract: A photosensitive resin composition includes a resin, a photoacid generator, a solvent, and a low-molecular-weight ester compound, in which low-molecular-weight ester compound has alkali degradability and has a molecular weight of less than 1,500, and a content of the low-molecular-weight ester compound is from 0.1% by mass to 6% by mass with respect to the total solid content of the composition.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin whose solubility in an aqueous alkali solution increases by the action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, an ester compound, and a fluorine-containing polymer, in which the ester compound has alkali decomposability and has a molecular weight of 50 or more and less than 1,500.

Abstract: The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound represented by General Formula (1). In General Formula (1), X represents a sulfur atom or an iodine atom. m represents 1 or 2, in a case where X is a sulfur atom, m is 2, and in a case where X is an iodine atom, m is 1. R1's each independently represent an alkyl group or alkenyl group which may include a heteroatom, an aromatic heterocyclic group, or an aromatic hydrocarbon ring group. Further, in a case where m is 2, two R1's may be bonded to each other to form a ring. R2 represents a divalent linking group. R3 represents a divalent linking group having no aromatic group. Y? represents an anionic moiety. The pKa of the compound represented by General Formula (1) as Y? is protonated is ?2.0 to 1.5.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin having an acid-decomposable group whose polarity increases through decomposition by the action of an acid, an acid generator A capable of generating a first acid upon irradiation with actinic rays or radiation, and an acid generator B capable of generating a second acid upon irradiation with actinic rays or radiation, and the first acid and the second acid satisfy predetermined requirements.

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition which satisfies a relational expression represented by a specific formula in a case where an exposure latitude is represented by EL and an normalized image log slope is represented by NILS, in which the actinic ray-sensitive or radiation-sensitive resin composition can provide very excellent roughness performance, exposure latitude, and depth of focus, particularly, in the formation of an ultrafine pattern (for example, a contact hole pattern having a hole diameter of 45 nm or less, or a line-and-space pattern having a line width of 45 nm or less); and an actinic ray-sensitive or radiation-sensitive film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a photoacid generator that generates an acid having a pKa of ?1.40 or more upon irradiation with actinic rays or radiation, and (B) a resin having a repeating unit containing an acid-decomposable group, in which an Eth sensitivity of the repeating unit containing an acid-decomposable group is 5.64 or less, and which can provide very excellent roughness performance, exposure latitude, and depth of focus, particularly, in the formation of an ultrafine pattern; a photoacid generator; and an actinic ray-sensitive or radiation-sensitive film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound that generates an acid represented by Formula (I) by irradiation with an actinic ray or radiation, and a resin. The resist film is formed of the actinic ray-sensitive or radiation-sensitive resin composition. In the pattern forming method and the method of manufacturing an electronic device, the actinic ray-sensitive or radiation-sensitive resin composition is used.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (I), A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method, in Formula (I), Z represents a halogen atom, a group represented by R11OCH2—, or a group represented by R12OC(?O)CH2—. R11 and R12 each represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.

Abstract: A pattern forming method includes, in this order: a step (1) of forming a film on a substrate by using an actinic ray-sensitive or radiation-sensitive resin composition containing at least a resin having a group that is decomposed due to an action of an acid so as to generate a polar group; a step (2) of exposing the film; a step (3) of causing the exposed film to come into contact with a component that performs any one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction with a polar group generated in the exposed film without substantially dissolving the exposed film; and a step (4) of forming a pattern by developing the exposed film by using a developer including an organic solvent and removing an area of the film having a small exposure amount.

Abstract: An active-light-sensitive or radiation-sensitive resin composition includes a resin (A) and a photoacid generator (B) capable of generating an acid upon irradiation with active light or radiation, in which the active-light-sensitive or radiation-sensitive resin composition contains at least a photoacid generator (B1) represented by the following General Formula (1) and a photoacid generator (B2) other than the photoacid generator (B1) as the photoacid generator (B).

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (A) and any of compounds (B) of general formula (I) below. (In general formula (I), Rf represents a fluorine atom or a monovalent organic group containing at least one fluorine atom; R1 represents a hydrogen atom or a monovalent substituent containing no fluorine atom; X1 represents a monovalent organic group having at least two carbon atoms, or a methyl group in which a substituent other than a fluorine atom is optionally introduced, provided that X1 may be bonded to R1 to thereby form a ring; and Z represents a moiety that when exposed to actinic rays or radiation, is converted to a sulfonic acid group, an imidic acid group or a methide acid group).

Abstract: A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).

Abstract: Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.

Abstract: Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.