Abstract: An active-light-sensitive or radiation-sensitive resin composition includes a resin (A) and a photoacid generator (B) capable of generating an acid upon irradiation with active light or radiation, in which the active-light-sensitive or radiation-sensitive resin composition contains at least a photoacid generator (B1) represented by the following General Formula (1) and a photoacid generator (B2) other than the photoacid generator (B1) as the photoacid generator (B).

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (A) and any of compounds (B) of general formula (I) below. (In general formula (I), Rf represents a fluorine atom or a monovalent organic group containing at least one fluorine atom; R1 represents a hydrogen atom or a monovalent substituent containing no fluorine atom; X1 represents a monovalent organic group having at least two carbon atoms, or a methyl group in which a substituent other than a fluorine atom is optionally introduced, provided that X1 may be bonded to R1 to thereby form a ring; and Z represents a moiety that when exposed to actinic rays or radiation, is converted to a sulfonic acid group, an imidic acid group or a methide acid group).

Abstract: A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).

Abstract: Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.

Abstract: Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.

Abstract: The present invention has an object to provide an actinic ray-sensitive or radiation-sensitive resin composition having excellent collapse performance, an actinic ray-sensitive or radiation-sensitive film formed using the composition, a pattern forming method using the composition, and a method for manufacturing an electronic device, including the pattern forming method. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention is an actinic ray-sensitive or radiation-sensitive resin composition containing a resin whose solubility with respect to a developer changes by the action of an acid, in which the resin includes a repeating unit derived from a monomer having at least one of a lactone structure or an amide structure, and the dissolution parameter of the monomer is 24.0 or more.

Abstract: One embodiment of the present invention provides a pattern forming method including a step for forming an actinic ray-sensitive or radiation-sensitive film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a step for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film using a composition for forming an upper layer film, a step for exposing a laminate film including the actinic ray-sensitive or radiation-sensitive film and the upper layer film, and a step for developing the exposed laminate film using a developer including an organic solvent. The composition for forming an upper layer film contains a resin (XA), a resin (XB) containing fluorine atoms, a basic compound (XC), and a solvent (XD), and the resin (XA) is a resin not containing fluorine atoms, or in a case where the resin (XA) contains fluorine atoms, the resin (XA) is a resin having a lower content of fluorine atoms than that in the resin (XB), based on a mass.

Abstract: The present invention has an object to provide an active-light-sensitive or radiation-sensitive resin composition having high DOF and low LWR; a pattern forming method using the composition; and a method for manufacturing an electronic device. The active-light-sensitive or radiation-sensitive resin composition of the present invention includes a resin P and a compound that generates an acid upon irradiation with active light or radiation, in which the resin P has a repeating unit p1 and a repeating unit p2 represented by specific formulae, and the repeating unit p2 does not have a group in which a hydroxy group of a hydroxyadamantyl group is protected with a group that decomposes by the action of an acid to leave.

Abstract: Provided are an active-light-sensitive or radiation-sensitive resin composition having high DOF and excellent LWR, a pattern forming method using the composition, and a method for manufacturing an electronic device. The composition is an active-light-sensitive or radiation-sensitive resin composition containing a resin (P), in which the resin (P) includes a repeating unit (a) having a group that decomposes by the action of an acid to generate a polar group, including at least a specific repeating unit (a1) represented by General Formula (1); a repeating unit (b1) having at least one of a lactone structure, a sultone structure, or a carbonate structure; and a repeating unit (b2) having at least one of a lactone structure, a sultone structure, or a carbonate structure, which is different from the repeating unit (b1), the Ohnishi parameter of the repeating unit (b1) is larger than the Ohnishi parameter of the repeating unit (b2), and the difference between both the Ohnishi parameters is 0.85 or more.

Abstract: Provided are an active-light-sensitive or radiation-sensitive resin composition having high depth of focus and excellent resolving power; a pattern forming method using the composition; and a method for manufacturing an electronic device.

Abstract: Provided are a pattern forming method including (1) a step of forming a resist underlayer film on a substrate to be processed, (2) a step of forming a resist film on the resist underlayer film, using a resist composition containing (A) a resin having a repeating unit containing a Si atom, and (B) a compound which generates an acid upon irradiation with actinic rays or radiation, (3) a step of exposing the resist film, (4) a step of developing the exposed resist film using a developer including an organic solvent, thereby forming a negative tone resist pattern, and (5) a step of processing the resist underlayer film and the substrate to be processed, using the resist pattern as a mask, thereby forming a pattern, in which the content of the resin (A) is 20% by mass or more with respect to the total solid content of the resist composition.

Abstract: The present invention relates to a pattern forming method including: forming a film using an actinic ray-sensitive or radiation-sensitive resin composition that includes a (A) resin which has an increase in the polarity by the action of an acid, and thus, has a decrease in the solubility in a developer containing an organic solvent, a (B) compound capable of generating an acid upon irradiation with specific actinic ray or radiation, and a (C) solvent, exposing the film, and developing the exposed film using a developer including an organic solvent, in which the resin (A) has a structure in which a polar group is protected with a leaving group which decomposes to leave by the action of an acid, and the leaving group is a group represented by the following General Formula (I).

Abstract: A pattern forming method includes at least (i) forming a film on a substrate, using an actinic ray-sensitive or radiation-sensitive resin composition, (ii) irradiating the film with actinic rays or radiation, and (iii) developing the film irradiated with actinic rays or radiation, using a developer containing an organic solvent, in which the actinic ray-sensitive or radiation-sensitive resin composition contains a resin P and a compound that generates an acid upon irradiation with actinic rays or radiation, the resin P has a specific repeating unit Q1 represented by General Formula (q1) and a specific repeating unit Q2 represented by General Formula (q2), and the content of the repeating unit Q2 with respect to all the repeating units of the resin P is 20% by mole or more.

Abstract: Provided are a pattern forming method including a step of applying a composition for forming an upper layer film, containing a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A1) to (A4) described in the specification onto a resist film to form an upper layer film, a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent; a resist pattern formed by the pattern forming method; a method for manufacturing an electronic device, including the pattern forming method; and the composition for forming an upper layer film.

Abstract: A pattern forming method includes: applying an actinic ray-sensitive or radiation- sensitive resin composition onto a substrate to form a resist film; forming an upper layer film on the resist film, using a composition for forming an upper layer film; exposing the resist film having the upper layer film formed thereon; and developing the exposed resist film using a developer including an organic solvent to form a pattern. The composition for forming an upper layer film contains a resin having a repeating unit (a) with a ClogP value of 2.85 or more and a compound (b) with a ClogP of 1.30 or less, and the receding contact angle of the upper layer film with water is 70 degrees or more, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method.

Abstract: A composition for forming an upper layer film is applied onto a resist film formed using an actinic ray-sensitive or radiation-sensitive resin composition, and includes a resin X and a compound A having a radical trapping group. A pattern forming method includes applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, applying the composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, exposing the resist film having the upper layer film formed thereon, and developing the exposed resist film using a developer including an organic solvent to form a pattern.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (P) having a partial structure represented by General Formula (X), and a compound capable of generating an acid upon irradiation with actinic ray or radiation.

Abstract: A pattern forming method includes the following steps (a) to (d): (a) applying an actinic ray-sensitive or radiation-sensitive resin composition including a resin capable of increasing a polarity by the action of an acid onto a substrate to form a resist film, (b) forming an upper layer film on the resist film, (c) exposing the resist film having the upper layer film formed thereon, and (d) developing the exposed resist film using an organic developer to form a pattern, in which the resin capable of increasing the polarity by the action of an acid includes an acid-decomposable repeating unit having an acid-leaving group a having 4 to 7 carbon atoms, and the maximum value of the number of carbon atoms and the protection rate of the acid-leaving group a satisfy specific conditions.

Abstract: Provided are a composition for forming an upper layer film for a photoresist, including a polymer having a molecular weight distribution in which a peak area of a high-molecular-weight component having a weight-average molecular weight of 40,000 or more accounts for 0.1% or less with respect to the entire peak area in the molecular weight distribution, measured by the gel permeation chromatography.