Abstract: A method for producing an electronic device includes the pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development. Specifically, provided is a pattern forming method, including a film forming step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of irradiating the film, and a development step of developing the film using a developer containing an organic solvent, in which the composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation, the content of Si atoms in the resin is 1.0 to 30 mass %, and the content of the resin in the total solid content of the composition is 20 mass % or more.

Abstract: The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) including a repeating unit (i) having a group which decomposes by the action of an acid represented by the following General Formula (1), a pattern forming method using the composition, a method for manufacturing an electronic device, and an electronic device.

Abstract: The present invention has an object to provide a pattern forming method capable of providing good DOF, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a compound having a molecular weight of 870 or less, which generates an acid upon irradiation with active light or radiation.

Abstract: The present invention has an object to provide a method for forming a negative tone pattern in which DOF of a resist composition used is high and shrinkage of a film in post exposure bake is suppressed; a method for manufacturing an electronic device including the pattern forming method; and an active-light-sensitive or radiation-sensitive resin composition.

Abstract: The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.

Abstract: The present invention has an object to provide a method for forming a negative tone pattern in which shrinkage of a film in post exposure bake is suppressed; a method for manufacturing an electronic device including the pattern forming method; and an active-light-sensitive or radiation-sensitive resin composition.

Abstract: Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.

Abstract: Provided are a pattern forming method capable of providing good DOF, EL, and watermark defect performance, a resist pattern formed by the pattern forming method, a composition for forming an upper layer film, used in the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to forming a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern, in which a receding contact angle of water on a surface of the upper layer film is 80° or more.

Abstract: A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).

Abstract: The present invention has an object to provide an active-light-sensitive or radiation-sensitive resin composition having high DOF and low LWR; a pattern forming method using the composition; and a method for manufacturing an electronic device. The active-light-sensitive or radiation-sensitive resin composition of the present invention includes a resin P and a compound that generates an acid upon irradiation with active light or radiation, in which the resin P has a repeating unit p1 and a repeating unit p2 represented by specific formulae, and the repeating unit p2 does not have a group in which a hydroxy group of a hydroxyadamantyl group is protected with a group that decomposes by the action of an acid to leave.

Abstract: Provided are an active-light-sensitive or radiation-sensitive resin composition having high depth of focus and excellent resolving power; a pattern forming method using the composition; and a method for manufacturing an electronic device.

Abstract: Provided are an active-light-sensitive or radiation-sensitive resin composition having high DOF and excellent LWR, a pattern forming method using the composition, and a method for manufacturing an electronic device. The composition is an active-light-sensitive or radiation-sensitive resin composition containing a resin (P), in which the resin (P) includes a repeating unit (a) having a group that decomposes by the action of an acid to generate a polar group, including at least a specific repeating unit (a1) represented by General Formula (1); a repeating unit (b1) having at least one of a lactone structure, a sultone structure, or a carbonate structure; and a repeating unit (b2) having at least one of a lactone structure, a sultone structure, or a carbonate structure, which is different from the repeating unit (b1), the Ohnishi parameter of the repeating unit (b1) is larger than the Ohnishi parameter of the repeating unit (b2), and the difference between both the Ohnishi parameters is 0.85 or more.

Abstract: A pattern forming method includes (A) a step of forming a first resist film on a substrate by using a first resist composition, (B) a step of exposing the first resist film, (C) a step of forming a first pattern by developing the exposed first resist film, (D) a step of forming a planarization layer on the substrate provided with the first pattern by using composition for forming a planarization layer (a), (E) a step of forming a second resist film on the planarization layer by using a second resist composition, (F) a step of exposing the second resist film, and (G) a step of forming a second pattern by developing the exposed second resist film in this order, in which the first pattern is insoluble in the composition for forming the planarization layer (a), and a method for manufacturing an electronic device using the pattern forming method.

Abstract: A pattern forming method includes a pattern forming method using an actinic ray-sensitive or radiation-sensitive resin composition in which ?Dth represented by the following Formula (1) satisfies 0.8 or more (in the formula, Dth(PTI) represents the threshold deprotection rate of the acid-decomposable group with respect to the film thickness of the actinic ray-sensitive or radiation-sensitive film after development using the alkali developer, and Dth(NTI) represents the threshold deprotection rate of the acid-decomposable group with respect to the film thickness of the actinic ray-sensitive or radiation-sensitive film after development using the developer including an organic solvent).

Abstract: An active-light-sensitive or radiation-sensitive resin composition includes a resin (A) and a photoacid generator (B) capable of generating an acid upon irradiation with active light or radiation, in which the active-light-sensitive or radiation-sensitive resin composition contains at least a photoacid generator (B1) represented by the following General Formula (1) and a photoacid generator (B2) other than the photoacid generator (B1) as the photoacid generator (B).

Abstract: A method of forming a pattern includes (a) forming a film of an actinic-ray- or radiation-sensitive resin composition, (b) exposing the film to light, and (c) developing the exposed film with a developer comprising an organic solvent to thereby form a negative pattern. The actinic-ray- or radiation-sensitive resin composition includes (A) a resin whose solubility in the developer comprising an organic solvent is lowered when acted on by an acid, which resin contains a repeating unit with any of lactone structures of general formula (1) below, and (B) a compound that when exposed to actinic rays or radiation, generates an acid.

Abstract: The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) including a repeating unit (i) having a group which decomposes by the action of an acid represented by the following General Formula (1), a pattern forming method using the composition, a method for manufacturing an electronic device, and an electronic device.

Abstract: The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) including a repeating unit (i) having a group represented by the following General Formula (1), and a compound which generates an acid by irradiation with actinic ray or radiation, represented by a specific formula, a pattern forming method using the composition, a method for manufacturing an electronic device, and an electronic device.

Abstract: A pattern forming method includes, in this order: a step (1) of forming a film on a substrate by using an actinic ray-sensitive or radiation-sensitive resin composition containing at least a resin having a group that is decomposed due to an action of an acid so as to generate a polar group; a step (2) of exposing the film; a step (3) of causing the exposed film to come into contact with a component that performs any one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction with a polar group generated in the exposed film without substantially dissolving the exposed film; and a step (4) of forming a pattern by developing the exposed film by using a developer including an organic solvent and removing an area of the film having a small exposure amount.

Abstract: The present invention relates to a pattern forming method including: forming a film using an actinic ray-sensitive or radiation-sensitive resin composition that includes a (A) resin which has an increase in the polarity by the action of an acid, and thus, has a decrease in the solubility in a developer containing an organic solvent, a (B) compound capable of generating an acid upon irradiation with specific actinic ray or radiation, and a (C) solvent, exposing the film, and developing the exposed film using a developer including an organic solvent, in which the resin (A) has a structure in which a polar group is protected with a leaving group which decomposes to leave by the action of an acid, and the leaving group is a group represented by the following General Formula (I).