Abstract: The randomly-generated energy produced by decay of a radioactive source is utilized to generate timing signals for horologic and chronographic instruments such as electronic watches, clocks or chronometers. The radioactive source is implanted by ion implantation or diffusion in or near the depletion region of a P-N junction semiconductor device which may be integrated on a common semiconductor substrate with the electronic timekeeping circuitry of the horologic or chronographic instruments. Individual pulses due to beta radiation produced in the depletion region causes electron migration from the P to the N region of the device and produces electrical pulses. These pulses are amplified and counted until a preselected count is reached. When such count is reached, the timekeeping circuitry is stepped by one second or some convenient fraction thereof.

Abstract: Apparatus for plasma etching of semiconductor devices. A plasma chamber is inductively coupled to a source of A.C. power wherein the semiconductor devices are etched. Alternately, the semiconductor devices may be etched or stripped at a location downstream of the plasma chamber.

Abstract: Anisotropic etching of thick photoresist under plasma conditions to achieve a vertical side wall with or without undercutting is accomplished by operating at a low excitation frequency, a pressure in the range of 0.3 to 2 Torr and a controlled concentration of active species.

Abstract: Apparatus for the etching of semiconductor devices which includes, in combination, an etching chamber containing the semiconductor device to be etched, an electrodeless etching plasma forming chamber having an inlet connected to a source of continuously flowing etching gas and having an outlet connected to said etching chamber in fluid flow communication; a helical inductive resonator coupler for coupling a source of R.F.

Abstract: This invention relates to a plasma etching system, which includes a lower flange and a spaced upper flange; a chamber wall mounted between the flanges to form a closed etching chamber; a grounded wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; an electrical insulating element interposed between the chamber wall and the support plate; a sintered or sintered-like porous electrode plate mounted in the chamber in spaced relationship with respect to the wafer; said plate having a gas inlet for receiving a supply of etching gas; circuitry for applying an excitation voltage to this plate, and said chamber having a gas outlet leading to a vacuum source.

Abstract: Method of preparing silicon nitride film by glow discharge from the decomposition of liquid trisilylamine, (SiH.sub.3).sub.3 N, which is a volatile monomer. In this connection, the use of a single monomer as diluted with an inert gas enables greater uniformity to be achieved in the deposition of silicon nitride films. Further, the presence of Si-N bonds in the monomer enables more control and better stoichiometry in the deposited films.

Abstract: An electronic horologic instrument, such as an electronic watch or clock, utilizes randomly-generated energy to produce electrical pulses in synchronism with the generated energy. The electrical pulses are counted until a predetermined count is reached. When this occurs, the timekeeping circuitry is stepped by a unit of time such as one second or some other convenient fraction thereof. The electrical pulses produced, although random over a short time period, have an average rate over a long time period that follows well-established statistics, to provide a horologic instrument with an acceptable degree of accuracy.

Abstract: In the manufacture of semiconductor devices it is often times necessary to use photomasks. It has been found that silicon material is useful as see-through photomasks when deposited on a thin film of glass. After deposition the silicon is etched to form the mask. A suitable etchant, which may be used and which does not undercut patterned material formed over the silicon, may be derived from a composition of CCl.sub.4 + N.sub.2 + Cl.sub.2 and in some instances + HCl. This etchant may also be used in patterning polysilicon leads on various silicon devices such as charged coupled devices without undercutting of the leads.

Abstract: In the manufacture of semiconductor devices it is often times necessary to use photomasks. It has been found that silicon material is useful as see-through photomasks when deposited on a thin film of glass. After deposition the silicon is etched to form the mask. A suitable etchant, which may be used and which does not undercut patterned material formed over the silicon, may be derived from a composition of CCl.sub.4 + N.sub.2 + Cl.sub.2 and in some instances + HCl. This etchant may also be used in patterning polysilicon leads on various silicon devices such as charged coupled devices without undercutting of the leads.