Abstract: A measuring system for the optical measurement of an optical imaging system, which is provided to image a pattern arranged in an object surface of the imaging system in an image surface of the imaging system, comprises an object-side structure carrier having an object-side measuring structure, to be arranged on the object side of the imaging system; an image-side structure carrier having an image-side measuring structure, to be arranged on the image side of the imaging system; the object-side measuring structure and the image-side measuring structure being matched to each other in such a way that, when the object-side measuring structure is imaged onto the image-side measuring structure with the aid of the imaging system, a superposition pattern is produced; and a detector for the locally resolving acquisition of the superposition pattern. The imaging system is designed as an immersion system for imaging with the aid of an immersion liquid.

Abstract: A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.

Abstract: An optical system of a microlithographic projection exposure apparatus contains a module, which can be fitted in the optical system and removed from it as a unit. The module contains a cavity which can be completely filled with a liquid and hermetically sealed, and a concavely curved optical surface which bounds the cavity at the top during operation of the projection exposure apparatus. This makes it possible to fill the module outside the optical system. The module can be tilted there so that no air bubble, which prevents complete filling, can form below the concavely curved optical surface.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: An optical system of a microlithographic projection exposure apparatus contains a module, which can be fitted in the optical system and removed from it as a unit. The module contains a cavity which can be completely filled with a liquid and hermetically sealed, and a concavely curved optical surface which bounds the cavity at the top during operation of the projection exposure apparatus. This makes it possible to fill the module outside the optical system. The module can be tilted there so that no air bubble, which prevents complete filling, can form below the concavely curved optical surface.

Abstract: A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.

Abstract: A measuring system (100) for the optical measurement of an optical imaging system (150), which is provided to image a pattern arranged in an object surface (155) of the imaging system in an image surface (156) of the imaging system, comprises an object-side structure carrier (110) having an object-side measuring structure (111), to be arranged on the object side of the imaging system; an image-side structure carrier (120) having an image-side measuring structure (121), to be arranged on the image side of the imaging system; the object-side measuring structure and the image-side measuring structure being matched to each other in such a way that, when the object-side measuring structure is imaged onto the image-side measuring structure with the aid of the imaging system, a superposition pattern is produced; and a detector (130) for the locally resolving acquisition of the superposition pattern. The imaging system is designed as an immersion system for imaging with the aid of an immersion liquid (171).

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A measuring system for the optical measurement of an optical imaging system, which is provided to image a pattern arranged in an object surface of the imaging system in an image surface of the imaging system, comprises an object-side structure carrier having an object-side measuring structure, to be arranged on the object side of the imaging system; an image-side structure carrier having an image-side measuring structure, to be arranged on the image side of the imaging system; the object-side measuring structure and the image-side measuring structure being matched to each other in such a way that, when the object-side measuring structure is imaged onto the image-side measuring structure with the aid of the imaging system, a superposition pattern is produced; and a detector for the locally resolving acquisition of the superposition pattern. The imaging system is designed as an immersion system for imaging with the aid of an immersion liquid.

Abstract: An optical system of a microlithographic projection exposure apparatus (10) contains a module (50; 150), which can be fitted in the optical system and removed from it as a unit. The module contains a cavity (42; 142) which can be completely filled with a liquid (34; 134) and hermetically sealed, and a concavely curved optical surface (S) which bounds the cavity at the top during operation of the projection exposure apparatus (10). This makes it possible to fill the module outside the optical system, The module can be tilted there so that no air bubble, which prevents complete filling, can form below the concavely curved optical surface.

Abstract: A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.

Abstract: A device and a method for the optical measurement of an optical system (1), in particular an optical imaging system. The device includes one or more object-side test optics components (2a, 2b) arranged in front of the optical system to be measured, and/or one or more image-side test optics components (3, 4, 5) arranged behind the optical system to be measured. A container for use in such a device, a microlithography projection exposure machine equipped with such a device, and a method which can be carried out with the aid of this device are also disclosed. An immersion fluid is introduced adjacent to at least one of the one or more object-side test optics components and/or image-side test optics components. Such device and method provide for optical measurement by microlithography projection objectives of high numerical aperture using wavefront detection with shearing or point diffraction interferometry or a Moiré measuring technique.

Abstract: Based upon an existing or to be produced multi-layered semiconductor-insulator-semiconductor carrier layer wafer (SOI substrate), irregularity of the etching conditions between the center and the edge region occurring during dry etching can be counteracted by a number of alternative steps, in particular, an additional layer construction compensating for the etching irregularity so that in any event an approximately homogeneous etching removal takes place over the entire area of the wafer to be etched.

Abstract: In order to increase the rigidity of a membrane mask that can be used for ion projection lithography, a second wafer made of the material of the membrane layer is provided in addition to a first wafer. The second wafer is patterned in the same way as the first wafer to form a second carrying ring and is fitted on the membrane layer in a mirror-inverted manner with respect to the first wafer so that the membrane area is arranged between the first and second carrying rings in a centered manner in the direction perpendicular to the membrane plane.

Abstract: A method for producing a perforated mask for particle radiation includes calculating values of an elasticity of adjacent cells of a mask with respect to longitudinal and shear stresses in a main plane of the mask on a model of the desired pattern of mask openings. For the respective individual cells, length and direction of all the edge sections of the openings and cross-sectional areas of the openings are determined. Therefrom, statistical parameters are derived, which are used as a variable in preselected empirical functions to determine the elasticity values of the cells analytically. By linking the elasticity values determined with deformation forces to be expected, the vector field of a distortion of the mask to be expected is calculated by FE calculation. For cutting the mask openings into a blank, a pattern is selected that represents the desired pattern with a distortion being the inverse of the previously calculated distortion.

Abstract: The invention relates to a goods transfer station (1) for discharging articles (4, 5), having at least one delivery window (12), at least one conveying space (19, 20, 21, 22, 30, 31) and at least one closing element (23, 24, 25, 26, 32, 33), it being the case that the conveying space has at least one opening (9, 10), through which an article (4, 5) can be discharged from the conveying space (19, 20, 21, 22, 30, 31), that the conveying space (19, 20, 21, 22, 30, 31) can be moved between at least one unloading position (7) and at least one loading position (3), that its opening (9, 10) is located in the region of a delivery window (12) in the unloading position (7), and that the opening can be closed by the closing element at least in the unloading position. The invention also relates to a process for operating such an apparatus.

Abstract: The membrane mask is based on an SOI substrate. In an existing or subsequently produced multilayer semiconductor/insulator/semiconductor-carrier-layer substrate, the inhomogeneous mechanical stresses in the semiconductor layer, which lead to undesirable distortions, are converted at least partly into a homogenous state prior to the structuring of the semiconductor layer. In order to accomplish this, either an additional layer structure is provided on an existing SOI substrate, or a modified layer structure is provided in the fabrication of the SOI substrate, or both.

Abstract: A reflective membrane mask is composed at least partially of an electrically conductive material and is aligned horizontally over a sample to be processed. Bending of the reflective membrane mask is compensated for by disposing an electrode plate above the membrane mask and parallel to it, which electrode plate is provided with a number of electrodes that are electrically isolated from one another. Electrostatic forces, that correct for any deformation of the membrane mask, are produced by applying an electrical potential difference between each electrode and the membrane mask.

Abstract: A method for producing a perforated mask for particle radiation includes calculating values of an elasticity of adjacent cells of a mask with respect to longitudinal and shear stresses in a main plane of the mask on a model of the desired pattern of mask openings. For the respective individual cells, length and direction of all the edge sections of the openings and cross-sectional areas of the openings are determined. Therefrom, statistical parameters are derived, which are used as a variable in preselected empirical functions to determine the elasticity values of the cells analytically. By linking the elasticity values determined with deformation forces to be expected, the vector field of a distortion of the mask to be expected is calculated by FE calculation. For cutting the mask openings into a blank, a pattern is selected that represents the desired pattern with a distortion being the inverse of the previously calculated distortion.