Abstract: The invention relates to a goods transfer station (1) for discharging articles (4, 5), having at least one delivery window (12), at least one conveying space (19, 20, 21, 22, 30, 31) and at least one closing element (23, 24, 25, 26, 32, 33), it being the case that the conveying space has at least one opening (9, 10), through which an article (4, 5) can be discharged from the conveying space (19, 20, 21, 22, 30, 31), that the conveying space (19, 20, 21, 22, 30, 31) can be moved between at least one unloading position (7) and at least one loading position (3), that its opening (9, 10) is located in the region of a delivery window (12) in the unloading position (7), and that the opening can be closed by the closing element at least in the unloading position. The invention also relates to a process for operating such an apparatus.

Abstract: In order to increase the rigidity of a membrane mask that can be used for ion projection lithography, a second wafer made of the material of the membrane layer is provided in addition to a first wafer. The second wafer is patterned in the same way as the first wafer to form a second carrying ring and is fitted on the membrane layer in a mirror-inverted manner with respect to the first wafer so that the membrane area is arranged between the first and second carrying rings in a centered manner in the direction perpendicular to the membrane plane.

Abstract: Based upon an existing or to be produced multi-layered semiconductor-insulator-semiconductor carrier layer wafer (SOI substrate), irregularity of the etching conditions between the center and the edge region occurring during dry etching can be counteracted by a number of alternative steps, in particular, an additional layer construction compensating for the etching irregularity so that in any event an approximately homogeneous etching removal takes place over the entire area of the wafer to be etched.

Abstract: The membrane mask is based on an SOI substrate. In an existing or subsequently produced multilayer semiconductor/insulator/semiconductor-carrier-layer substrate, the inhomogeneous mechanical stresses in the semiconductor layer, which lead to undesirable distortions, are converted at least partly into a homogenous state prior to the structuring of the semiconductor layer. In order to accomplish this, either an additional layer structure is provided on an existing SOI substrate, or a modified layer structure is provided in the fabrication of the SOI substrate, or both.

Abstract: A reflective membrane mask is composed at least partially of an electrically conductive material and is aligned horizontally over a sample to be processed. Bending of the reflective membrane mask is compensated for by disposing an electrode plate above the membrane mask and parallel to it, which electrode plate is provided with a number of electrodes that are electrically isolated from one another. Electrostatic forces, that correct for any deformation of the membrane mask, are produced by applying an electrical potential difference between each electrode and the membrane mask.