Abstract: A method for controlling a photolithography process includes forming a first layer on a selected wafer. A first overlay error associated with the first layer is measured. At least one parameter in an operating recipe for performing a photolithography process on a second layer formed on the first wafer is determined based on at least the first overlay error measurement. A processing line includes a photolithography stepper, and overlay metrology tool, and a controller. The photolithography stepper is configured to process wafers in accordance with an operating recipe. The overlay metrology tool is configured to measure overlay errors associated with the processing of the wafers in the photolithography stepper.

Abstract: A method and an apparatus for selectively processing a layer of a workpiece based upon dependencies with other layers in the workpiece. A process step upon the workpiece is performed. Metrology data relating to the workpiece is acquired. A process adjustment relating to a first layer on the workpiece is calculated based upon the metrology data. A determination whether an error on a second layer on the workpiece would occur in response to an implementation of the process adjustment performed on the first layer. A magnitude of the calculated process adjustment is reduced in response to a determination that the second layer would be affected in response to the implementation of the process adjustment.

Abstract: A processing line includes a process tool, a metrology tool, a tool state monitor, and a sampling controller. The processing tool is configured to process workpieces. The metrology tool is configured to measure an output characteristic of selected workpieces in accordance with a sampling plan. The tool state monitor is configured to observe at least one tool state variable value during the processing of a selected workpiece in the processing tool. The sampling controller is configured to receive the observed tool state variable value and determine the sampling plan for the metrology tool based on the observed tool state variable value. A method for processing workpieces includes processing a plurality of workpieces in a processing tool. A characteristic of selected workpieces is measured in accordance with a sampling plan. At least one tool state variable value is observed during the processing of a particular workpiece in the processing tool.

Abstract: A method for controlling a manufacturing system includes processing workpieces in a plurality of tools; initiating a baseline control script for a selected tool of the plurality of tools; providing context information for the baseline control script; determining a tool type based on the context information; selecting a group of control routines for the selected tool based on the tool type; determining required control routines from the group of control routines based on the context information; and executing the required control routines to generate control actions for the selected tool. A manufacturing system includes a plurality of tools adapted to process workpieces, a control execution manager, and a control executor. The control execution manager is adapted to initiate a baseline control script for a selected tool of the plurality of tools and provide context information for the baseline control script.

Abstract: A method and an apparatus for acquiring pre-process and post-process integrated metrology data. A lot of semiconductor wafers is provided. A pre-process integrated metrology data acquisition from a first semiconductor wafer within the lot of semiconductor wafers is performed. A process operation on the first semiconductor wafer is performed at least partially during the process of acquiring pre-process metrology data from a second semiconductor wafer within the lot of semiconductor wafers. Post-process integrated metrology data is acquired from the first semiconductor wafer in response to processing of the first semiconductor wafer. The pre-process and the post-process metrology data is analyzed for evaluation of the process operation performed on the first semiconductor wafer.

Abstract: A method for adaptively scheduling tool maintenance includes controlling an operating recipe of a tool using a plurality of control actions, monitoring the control actions to identify a degraded tool condition, and automatically initiating a tool maintenance recommendation in response to identifying the degraded tool condition. A manufacturing system includes a tool, a process controller, and a tool health monitor. The tool is adapted to process a workpiece in accordance with an operating recipe. The process controller is adapted to control the operating recipe of the tool using a plurality of control actions. The tool health monitor is adapted to monitor the control actions to identify a degraded tool condition and automatically initiate a tool maintenance recommendation in response to identifying the degraded tool condition.

Abstract: A method for controlling a photolithography process includes forming a first layer on a selected wafer. A first overlay error associated with the first layer is measured. At least one parameter in an operating recipe for performing a photolithography process on a second layer formed on the first wafer is determined based on at least the first overlay error measurement. A processing line includes a photolithography stepper, and overlay metrology tool, and a controller. The photolithography stepper is configured to process wafers in accordance with an operating recipe. The overlay metrology tool is configured to measure overlay errors associated with the processing of the wafers in the photolithography stepper.

Abstract: A method and apparatus is provided for identifying a cause of a fault based on controller output. The method comprises processing at least one workpiece under a direction of the controller and detecting a fault associated with the processing of the at least one workpiece. The method further includes determining a plurality of possible causes of the detected fault, identifying a more likely possible cause out of the plurality of possible causes, providing fault information associated with the identified more likely possible cause to the controller. The method further includes providing fault information associated with the identified more likely possible cause to the controller. The method further comprises adjusting the processing of one or more workpieces to be processed next based on the fault information provided to the controller.

Abstract: A method and an apparatus for dynamic targeting for a process control system. A process step is performed upon a first workpiece in a batch based upon a process target setting. The process target setting comprises at least one parameter relating to a target characteristic of the first workpiece. Manufacturing data relating to processing of the first workpiece is acquired. The manufacturing data comprises at least one of a metrology data relating to the processed first workpiece and a tool state data relating to the tool state of a processing tool. Electrical data relating to the processed first workpiece is acquired at least partially during processing of a second workpiece in the batch. The process target setting is adjusted dynamically based upon a correlation of the electrical data with the manufacturing data.

Abstract: In general, the present invention is directed to a method of using slurry waste composition to determine the amount of metal removed during chemical mechanical polishing processes, and a system for accomplishing same. In one embodiment, the method comprises providing a substrate having a metal layer formed thereabove, performing a chemical mechanical polishing process on the layer of metal in the presence of a polishing slurry, measuring at least a concentration of a material comprising the metal layer in the polishing slurry used during said polishing process after at least some of said polishing process has been performed, and determining a thickness of the layer of metal removed during the polishing process based upon at least the measured concentration of the material comprising the metal layer.

Abstract: A method for monitoring a manufacturing system includes defining a plurality of observed states associated with the manufacturing system. State estimates are generated for the observed states. An uncertainty value is generated for each of the state estimates. Measurement data associated with an entity in the manufacturing system is received. The state estimates are updated based on the measurement data and the uncertainty values associated with the state estimates. A system for monitoring a manufacturing system includes a controller configured to define a plurality of observed states associated with the manufacturing system, generate state estimates for the observed states, generate an uncertainty value for each of the state estimates, receive measurement data associated with an entity in the manufacturing system, and update the state estimates based on the measurement data and the uncertainty values associated with the state estimates.

Abstract: A method and an apparatus for performing cascade control of processing of semiconductor wafers. A first semiconductor wafer for processing is received. A second semiconductor wafer for processing is received. A cascade processing operation upon the first and the second semiconductor wafers is performed, wherein the cascade processing operation comprises acquiring pre-process metrology data related to the second semiconductor wafer during at least a portion of a time period wherein the first semiconductor wafer is being processed.

Abstract: A method and an apparatus are provided for parallel fault detection. The method comprises receiving data associated with processing of a workpiece by a first processing tool, receiving data associated with processing of a workpiece by a second processing tool and comparing at least a portion of the received data to a common fault model to determine if a fault associated with at least one of the processing of the workpiece by the first processing tool and processing of the workpiece by the second processing tool occurred.

Abstract: A method and an apparatus for dynamically adjusting a sampling rate relating to wafer examination. A process step is performed upon a plurality of workpieces associated with a lot. A sample rate for acquiring metrology data relating to at least one of the processed workpiece is determined. A dynamic sampling rate adjustment process is performed to adaptively modify the sample rate. The dynamic sampling rate adjustment process includes comparing a predicted process outcome and an actual process outcome and modifying the sampling rate based upon the comparison.

Abstract: A method and an apparatus for reducing process non-uniformity across a processed semiconductor wafers. A first semiconductor wafer is processed. A process non-uniformity associated with the first processed semiconductor wafer is identified. A feedback correction in response to the process non-uniformity during processing of a second semiconductor wafer is performed and/or a feed-forward compensation is performed in response to the process non-uniformity during a subsequent process performed across the first semiconductor wafer is performed.

Abstract: In one illustrative embodiment, the method comprises providing a plurality of wafer lots, each of the lots comprising a plurality of wafers, performing at least one process operation on at least some of the wafers in each of the plurality of lots, identifying processed wafers having similar characteristics, re-allocating the wafers to lots based upon the identified characteristics, and performing additional processing operations on the identified wafers having similar characteristics in the re-allocated lots. In one illustrative embodiment, the system comprises a first processing tool for performing processing operations on each of a plurality of wafers in each of a plurality of wafer lots, a controller for identifying processed wafers having similar characteristics and re-allocating the wafers to lots based upon the identified characteristics, and a second processing tool adapted to perform additional processing operations on the identified wafers having similar characteristics in the re-allocated lot.

Abstract: A method includes processing workpieces in accordance with an operating recipe. Metrology data associated with at least one of the workpieces is received. A proposed control action is generated based on the metrology data. A defectivity metric is generated based on the proposed control action. The proposed control action is modified based on the defectivity metric. A manufacturing system includes a process tool, a metrology tool, and a process controller. The process tool is configured to process workpieces in accordance with an operating recipe. The metrology tool is configured to provide metrology data associated with at least one of the workpieces. The process controller is configured to generate a proposed control action based on the metrology data, generate a defectivity metric based on the proposed control action, and modify the proposed control action based on the defectivity metric.

Abstract: A method for controlling a photolithography process includes forming a first layer on a selected wafer. A first overlay error associated with the first layer is measured. At least one parameter in an operating recipe for performing a photolithography process on a second layer formed on the first wafer is determined based on at least the first overlay error measurement. A processing line includes a photolithography stepper, and overlay metrology tool, and a controller. The photolithography stepper is configured to process wafers in accordance with an operating recipe. The overlay metrology tool is configured to measure overlay errors associated with the processing of the wafers in the photolithography stepper.

Abstract: A method for scheduling activities in a manufacturing system includes defining a plurality of observed states associated with the manufacturing system. State estimates are generated for the observed states. Uncertainty values for the state estimates are generated. A plurality of candidate schedules for performing activities in the manufacturing system is identified. Changes to the uncertainty values are predicted based on the candidate schedules. One of the candidate schedules is selected based on the predicted changes to the uncertainty values.

Abstract: A method includes retrieving current state information associated with a process tool. A dynamic qualification recipe is generated based on the current state information. The dynamic qualification recipe is provided to the process tool for subsequent processing of at least one test workpiece. A system includes a process tool and a qualification recipe controller. The qualification recipe controller is configured to retrieve current state information associated with the process tool, generate a dynamic qualification recipe based on the current state information, and provide the dynamic qualification recipe to the process tool for subsequent processing of at least one test workpiece.