Abstract: A field emission display comprises an anode comprising a matrix of pixels and a cathode comprising an insulating layer defining a plurality of wells having a conductor therein. A first conductive layer forms a plurality of conductive pads, each of the conductive pads corresponding to one of the wells. A plurality of nanostructures are electrically coupled to the conductive pads. A second conductive layer is formed over the insulating layer and provides a plurality of gate electrodes. When a potential between the conductive pads and gate electrodes exceeds a threshold voltage, the nanostructures emit electrons that impinge on the pixels.

Abstract: A solid-state cold-cathode flat panel display a using thin-film-transistor (TFT) circuit is disclosed. Associated with each pixel element is a TFT circuit comprising a first and second transistor electrically cascaded and a capacitor in communication with an output of the first device and an output of the second device that may be used both to selectively address pixel elements in the display and hold pixels in their states for the frame time. Cold cathode sources are used to emit electrons that are drawn to selected pixel elements that include phosphor pads, which emit light of a known wavelength when struck by the emitted electrons.

Abstract: A cold-cathode flat panel display using thin-film-transistor (TFT) anode circuit is disclosed. Associated with each pixel element is a TFT circuit comprising first and second transistors electrically cascaded and a capacitor in communication with an output of the first device and an input of the second transistor used to selectively address pixel elements in the display and hold pixels in their selected states for the frame time. Cold cathode sources are used to emit electrons that are drawn to selected pixel elements that include phosphor areas, which emit light of a known wavelength when struck by the emitted electrons.

Abstract: New, hybrid vacuum electron devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of the nanotubes are also considered to multiply the output current. Two- and three-terminal device configurations are discussed. In all the cases considered, the device designs are such that both input and output capacitances are extremely low, while the efficiency of the electron extraction into vacuum is very high, so that the estimated operational frequencies are expected to be in a tera-hertz range. New vacuum triode structure with ballistic electron propagation along the nanotube is also considered.

Abstract: New method of introducing color to two- and three-dimensional images produced in glass or any other transparent media with laser induced micro-explosions, is proposed. The method is based on utilization of a special color film, which consists of multiple periodically repeating transparent stripes of filters of major Red, Green and Blue (RGB) colors. The color film is attached to the glass in front of the image, while external parallel beam of white light illuminates the image through this color film. The image becomes subdivided into multiple color stripes (for two-dimensional image) or slices (for three-dimensional image), which thus transform the image into RGB color sub-pixels. The computer program places the visible dots, resulting from the micro-explosions, into corresponding sub-pixel areas to reproduce the original colors of the image stored in the computer memory. If the sub-pixel pitch is sufficiently short, the human eye perceives the image as a colored one.

Abstract: A Reflective Field Emission Display (FED) pixel element and system employing same are disclosed. In the FED system disclosed, each pixel element is composed of at least one emitter that is operable to emit electrons and at least one reflector that is operable to attract and reflect the emitted electrons onto a transparent anode layer that oppositely positioned with respect to the emitter and reflector and is operable to attract the reflected electrons. In one aspect of the invention, the emitter layer is shaped to bound the reflector layer forming an electrical boundary that focuses the reflected electron beam onto a phosphor layer interposed between the transparent layer. In another aspect of the invention, a high voltage and a corresponding high voltage phosphor is applied to the transparent anode layer.

Abstract: A Reflective Field Emission Display (FED) system using reflective field emission pixel elements is disclosed. In the FED system disclosed, each pixel elements is composed of at least one edge emitter that is operable to emit electrons and at least one reflector that is operable to first attract and then reflect the emitted electrons onto a transparent layer that is operable to attract the reflected electrons. The transparent anode layer is oppositely positioned with respect to the cathode or emitter edge. In a one aspect of the invention, a phosphor layer interposed between the transparent layer and the pixel element produces a light photon as reflected electrons are attracted to the transparent layer. In another aspect of the invention, a plurality of phosphor layers are applied to the transparent layer to produce a color display when reflected electrons are attracted to the transparent layer.

Abstract: A Reflective Field Emission Display (FED) pixel element and system employing same are disclosed. In the FED system disclosed, each pixel element is composed of at least one emitter that is operable to emit electrons and at least one reflector that is operable to attract and reflect the emitted electrons onto a transparent anode layer that oppositely positioned with respect to the emitter and reflector and is operable to attract the reflected electrons. In one aspect of the invention, the emitter layer is shaped to bound the reflector layer forming an electrical boundary that focuses the reflected electron beam onto a phosphor layer interposed between the transparent layer. In another aspect of the invention, a high voltage and a corresponding high voltage phosphor is applied to the transparent anode layer.

Abstract: A Reflective Field Emission Display system, components and methods for fabricating the components. In the FED system, a plurality of reflective edge emission pixel elements are arranged in a matrix of N rows and M columns, the pixel elements contain an edge emitter that is operable to emit electrons and a reflector that is operable to extract and laterally reflect emitted electrons. A collector layer, laterally disposed from said reflector layer is operable to attract the reflected electrons. Deposited on the collector layer is a phosphor layer that emits a photon of a known wavelength when activated by an attracted electron. A transparent layer that is oppositely positioned with respect to the pixel elements is operable to attract reflected electrons and prevent reflected electrons from striking the phosphor layer. Color displays are further contemplated by incorporating individually controlled sub-pixel elements in each of the pixel elements.

Abstract: A Reflective Field Emission Display (FED) system using reflective field emission pixel elements is disclosed. In the FED system disclosed, each pixel elements is composed of at least one edge emitter that is operable to emit electrons and at least one reflector that is operable to first attract and then reflect the emitted electrons onto a transparent layer that is operable to attract the reflected electrons. The transparent anode layer is oppositely positioned with respect to the cathode or emitter edge. In a one aspect of the invention, a phosphor layer interposed between the transparent layer and the pixel element produces a light photon as reflected electrons are attracted to the transparent layer. In another aspect of the invention, a plurality of phosphor layers are applied to the transparent layer to produce a color display when reflected electrons are attracted to the transparent layer.

Abstract: A Reflective Field Emission Display system, components and methods for fabricating the components is disclosed. In the FED system disclosed, a plurality of reflective edge emission pixel elements are arranged in a matrix of N rows and M columns, the pixel elements contain an edge emitter that is operable to emit electrons and a reflector that is operable to extract and laterally reflect emitted electrons. A collector layer, laterally disposed from said reflector layer is operable to attract the reflected electrons. Deposited on the collector layer is a phosphor layer that emits a photon of a known wavelength when activated by an attracted electron. A transparent layer that is oppositely positioned with respect to the pixel elements is operable to attract reflected electrons and prevent reflected electrons from striking the phosphor layer. Color displays are further contemplated by incorporating individually controlled sub-pixel elements in each of the pixel elements.

Abstract: A pixel structure and an edge-emitter field-emission display device having a first substrate or backplate including a cathode disposed thereon and a second substrate or faceplate including an anode disposed thereon, wherein the anode on the second substrate or faceplate has a light emitting film. The cathode may define a first bus of an X-Y bus array and the anode may define a second bus of the X-Y bus array. Alternatively, the first substrate may further include a control gate disposed thereon, wherein the cathode defines a first bus of an X-Y bus array and the control gate defines a second bus of the X-Y bus array.

Abstract: A display device is disclosed including a plurality of pixels arranged in a predetermined configuration. Each pixel including a mirror element disposed over a flat surface. A light modulating material disposed over the mirror element for selectively modulating a predetermined wave length of light received from an external source by transitioning between a first and a second state. The light modulating material in the first state causes destructive interference in the predetermined wave length of light and in the second state causes constructive interference in the predetermined wave length of light.

Abstract: A display device utilizes a plurality of pixels arranged in a predetermined configuration for recording and displaying information. Each pixel includes a substrate and a light modulating material for selectively modulating a predetermined wave length of light by transitoning between a first and a second state in response to a heater element. The light modulating material in the first state causes destructive interference in the predetermined wave length of light and in the second state causes constructive interference in the predetermined wave length of light. The pixel structure is buried within an aerogel thereby minimizing the heat dissipation rate from the pixels.

Abstract: A display device utilizes a plurality of pixels arranged in a predetermined configuration for recording and displaying information. Each pixel includes a substrate and a light modulating material for selectively modulating a predetermined wave length of light by transitioning between a first and a second state in response to a heater element. The light modulating material in the first state causes destructive interference in the predetermined wave length of light and in the second state causes constructive interference in the predetermined wave length of light. The pixel structure is buried within an aerogel thereby minimizing the heat dissipation rate from the pixels.

Abstract: A display device is disclosed including a plurality of pixels arranged in a predetermined configuration. Each pixel including a mirror element disposed over a flat surface. A light modulating material disposed over the mirror element for selectively modulating a predetermined wave length of light received from an external source by transitioning between a first and a second state. The light modulating material in the first state causes destructive interference in the predetermined wave length of light and in the second state causes constructive interference in the predetermined wave length of light.

Abstract: A step junction is provided for superconductor/semiconductor heterostructure hybrid devices like tunneling transistors, in a body of p-InAs with a vertical side connecting the low plateau and high plateau on which superconductors, preferably of niobium, are applied.

Abstract: Real space hot electron transfer devices using hot electron transfer between two conducting channels are described.

Abstract: High speed optoelectronic devices which are suitable for use in an optical integrated circuit design. The devices comprise a monolithic planar structure wherein exciton-resonant light propagates along a single mode waveguide containing a single quantum well as the absorbing media. Optical absorption is controlled by the bleaching effect induced by free carriers whose electrical conduction makes possible optical detection and monolithic high speed, gate-controlled transistor structures.

Abstract: A semiconductor device implemented on a substrate which includes a first layer of semiconductor material of a first conductivity type composed of a semiconductor material and forming a first active region of said device, and a second layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap material disposed on the first layer and forming a second active region of the device. A third layer of semiconductor material is provided composed of a relatively narrow energy bandgap material disposed on the second layer and having an energy band step such that carriers are confined in that layer. A fourth layer of semiconductor material of a first conductivity type is further provided composed of a relatively wide energy bandgap material disposed on the third layer and forming a third active region of the device.