Patents by Inventor Alexander Sztein
Alexander Sztein has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10903625Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: GrantFiled: September 27, 2019Date of Patent: January 26, 2021Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Alexander Sztein, Po Shan Hsu
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Patent number: 10854777Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.Type: GrantFiled: February 20, 2020Date of Patent: December 1, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Melvin McLaurin, Alexander Sztein, Po Shan Hsu
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Patent number: 10854778Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.Type: GrantFiled: March 30, 2020Date of Patent: December 1, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Melvin McLaurin, Alexander Sztein, Po Shan Hsu
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Patent number: 10854776Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.Type: GrantFiled: February 20, 2020Date of Patent: December 1, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Melvin McLaurin, Alexander Sztein, Po Shan Hsu
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Publication number: 20200350740Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.Type: ApplicationFiled: May 18, 2020Publication date: November 5, 2020Inventors: Alexander Sztein, Melvin McLaurin, Po Shan Hsu, James W. Raring
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Publication number: 20200274333Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.Type: ApplicationFiled: February 14, 2020Publication date: August 27, 2020Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
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Patent number: 10749315Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.Type: GrantFiled: November 21, 2017Date of Patent: August 18, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, Eric Goutain, James W. Raring, Paul Rudy, Vlad Novotny
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Publication number: 20200244046Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.Type: ApplicationFiled: April 9, 2020Publication date: July 30, 2020Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, Eric Goutain, James W. Raring, Paul Rudy, Vlad Novotny
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Patent number: 10720757Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.Type: GrantFiled: December 12, 2018Date of Patent: July 21, 2020Assignee: Soraa Lase Diode, Inc.Inventors: James W. Raring, Melvin McLaurin, Paul Rudy, Po Shan Hsu, Alexander Sztein
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Patent number: 10693279Abstract: In an example, the present invention provides a gallium and nitrogen containing structure. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates having one or more epitaxially grown layers. The structure has a first handle substrate coupled to each of the substrates. The orientation of a reference crystal direction for each of the substrates are parallel to within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrates.Type: GrantFiled: August 29, 2019Date of Patent: June 23, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, James W. Raring
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Patent number: 10658810Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.Type: GrantFiled: November 26, 2018Date of Patent: May 19, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Alexander Sztein, Melvin McLaurin, Po Shan Hsu, James W. Raring
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Patent number: 10629689Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.Type: GrantFiled: June 11, 2018Date of Patent: April 21, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Melvin McLaurin, Alexander Sztein, Po Shan Hsu
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Publication number: 20200099196Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: ApplicationFiled: September 27, 2019Publication date: March 26, 2020Inventors: Melvin McLaurin, James W. Raring, Alexander Sztein, Po Shan Hsu
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Patent number: 10566767Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.Type: GrantFiled: November 14, 2016Date of Patent: February 18, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
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Patent number: 10559939Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.Type: GrantFiled: March 27, 2018Date of Patent: February 11, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Hua Huang, Phillip Skahan, Sang-Ho Oh, Ben Yonkee, Alexander Sztein, Qiyuan Wei
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Patent number: 10439364Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: GrantFiled: September 1, 2017Date of Patent: October 8, 2019Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Alexander Sztein, Po Shan Hsu
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Patent number: 10431958Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less.Type: GrantFiled: July 11, 2018Date of Patent: October 1, 2019Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, James W. Raring
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Patent number: 10367334Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: GrantFiled: June 7, 2016Date of Patent: July 30, 2019Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, Eric Goutain, Dan Steigerwald, James W. Raring
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Publication number: 20190109432Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.Type: ApplicationFiled: November 26, 2018Publication date: April 11, 2019Inventors: Alexander Sztein, Melvin McLaurin, Po Shan Hsu, James W. Raring
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Patent number: 10193309Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.Type: GrantFiled: June 2, 2017Date of Patent: January 29, 2019Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Melvin McLaurin, Paul Rudy, Po Shan Hsu, Alexander Sztein