Patents by Inventor Alexander Sztein
Alexander Sztein has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160294162Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: ApplicationFiled: June 7, 2016Publication date: October 6, 2016Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, Eric Goutain, Dan Steigerwald, James W. Raring
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Patent number: 9401584Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less.Type: GrantFiled: November 3, 2015Date of Patent: July 26, 2016Assignee: SORAA LASER DIODE, INC.Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, James W. Raring
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Patent number: 9379525Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: GrantFiled: June 23, 2014Date of Patent: June 28, 2016Assignee: SORAA LASER DIODE, INC.Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, Eric Goutain, Dan Steigerwald, James W. Raring
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Patent number: 9368939Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: GrantFiled: December 3, 2014Date of Patent: June 14, 2016Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Alexander Sztein, Po Shan Hsu
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Patent number: 9362715Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.Type: GrantFiled: February 10, 2014Date of Patent: June 7, 2016Assignee: Soraa Laser Diode, IncInventors: Alexander Sztein, Melvin McLaurin, Po Shan Hsu, James W. Raring
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Patent number: 9246311Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.Type: GrantFiled: November 6, 2014Date of Patent: January 26, 2016Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Melvin McLaurin, Paul Rudy, Po Shan Hsu, Alexander Sztein
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Patent number: 9209596Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less.Type: GrantFiled: February 7, 2014Date of Patent: December 8, 2015Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, James W. Raring
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Publication number: 20150229100Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.Type: ApplicationFiled: February 10, 2014Publication date: August 13, 2015Applicant: Soraa Laser Diode, Inc.Inventors: Alexander Sztein, Melvin McLaurin, Po Shan Hsu, James W. Raring
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Publication number: 20150229107Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: ApplicationFiled: June 23, 2014Publication date: August 13, 2015Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, Eric Goutain, Dan Steigerwald, James W. Raring
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Publication number: 20150229108Abstract: A method for manufacturing a multi-emitter laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: ApplicationFiled: January 20, 2015Publication date: August 13, 2015Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
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Publication number: 20150140710Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.Type: ApplicationFiled: December 3, 2014Publication date: May 21, 2015Inventors: Melvin McLaurin, James W. Raring, Alexander Sztein, Po Shan Hsu
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Publication number: 20140318592Abstract: A method for enhancement of thermoelectric properties through polarization engineering. Internal electric fields created within a material are used to spatially confine electrons for the purpose of enhancing thermoelectric properties. Electric fields can be induced within a material by the presence of bound charges at interfaces. A combination of spontaneous and piezoelectric polarization can induce this interfacial charge. The fields created by these bound charges have the effect of confining charge carriers near these interfaces. By confining charge carriers to a channel where scattering centers can be deliberately excluded the electron mobility can be enhanced, thus enhancing thermoelectric power factor. Simultaneously, phonons will not be affected by the fields and thus will be subject to the many scattering centers present in the majority of the structure. This allows for simultaneous enhancement of power factor and reduction of thermal conductivity, thus improving the thermoelectric figure of merit, ZT.Type: ApplicationFiled: December 14, 2012Publication date: October 30, 2014Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Alexander Sztein, John E. Bowers, Steven P. DenBaars
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Patent number: 8692105Abstract: A method to suppress thermal conductivities of nitride films by using stacking faults and/or nano-scale In-composition fluctuation(s). Therefore, the present invention reduces thermal conductivity of nitride while keeping electrical conductivity high. In addition, In composition fluctuations can enhance the Seebeck coefficient through thermionic emission. The present invention further discloses a nitride based (e.g. GaN) thermoelectric lateral device with a short length.Type: GrantFiled: April 18, 2011Date of Patent: April 8, 2014Assignee: The Regents of the University of CaliforniaInventors: Hiroaki Ohta, Alexander Sztein, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20110253187Abstract: A method to suppress thermal conductivities of nitride films by using stacking faults and/or nano-scale In-composition fluctuation(s). Therefore, the present invention reduces thermal conductivity of nitride while keeping electrical conductivity high. In addition, In composition fluctuations can enhance the Seebeck coefficient through thermionic emission. The present invention further discloses a nitride based (e.g. GaN) thermoelectric lateral device with a short length.Type: ApplicationFiled: April 18, 2011Publication date: October 20, 2011Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Hiroaki Ohta, Alexander Sztein, Steven P. DenBaars, Shuji Nakamura