Patents by Inventor Alexandre Sarafianos

Alexandre Sarafianos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210057358
    Abstract: An integrated circuit includes a semiconductor substrate having a rear face. A first semiconductor well within the substrate includes circuit components. A second semiconductor well within the substrate is insulated from the first semiconductor well and the rest of the substrate. The second semiconductor well provides a detection device that is configurable and designed to detect a DFA attack by fault injection into the integrated circuit.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Applicant: STMicroelectronics (Rousset) SAS
    Inventors: Alexandre SARAFIANOS, Abderrezak MARZAKI
  • Patent number: 10892234
    Abstract: An integrated circuit includes a semiconductor substrate having a rear face. A first semiconductor well within the substrate includes circuit components. A second semiconductor well within the substrate is insulated from the first semiconductor well and the rest of the substrate. The second semiconductor well provides a detection device that is configurable and designed, in a first configuration, to detect a thinning of the substrate via its rear face, and in a second configuration, to detect a DFA attack by fault injection into the integrated circuit.
    Type: Grant
    Filed: October 8, 2018
    Date of Patent: January 12, 2021
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Alexandre Sarafianos, Abderrezak Marzaki
  • Patent number: 10878132
    Abstract: A device can be used for detecting faults. A shift register is suitable for shifting, in tempo with a clock, a binary signal alternating between two logic levels, in successive cells of the shift register. A first logic circuit is suitable for comparing values contained in at least one pair of cells of the register.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: December 29, 2020
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Alexandre Sarafianos, Thomas Ordas
  • Publication number: 20200365528
    Abstract: A semiconductor substrate has a front face and a back face. A first contact and a second contact, spaced apart from each other, are located on the front face. An electrically conductive wafer is located on the back face. A detection circuit is configured to detect a thinning of the substrate from the back face. The detection circuit including a measurement circuit that takes a measurement of a resistive value of the substrate between said at least one first contact, said at least one second contact and said electrically conductive wafer. Thinning is detected in response to the measured resistive value.
    Type: Application
    Filed: May 12, 2020
    Publication date: November 19, 2020
    Applicant: STMicroelectronics (Rousset) SAS
    Inventors: Alexandre SARAFIANOS, Fabrice MARINET, Julien DELALLEAU
  • Patent number: 10769513
    Abstract: An electronic device includes a logic circuit and an auxiliary circuit. The logic circuit includes a first terminal coupled to a supply voltage terminal, a second terminal intended coupled to a reference voltage terminal and an output terminal configured to deliver a signal in a high state or a low state. The auxiliary circuit is coupled between the first terminal and the second terminal and is configured to randomly generate or not generate an additional current between the first terminal and the second terminal on each change of state of the signal on the output terminal.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: September 8, 2020
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Alexandre Sarafianos, Thomas Ordas, Yanis Linge, Jimmy Fort
  • Patent number: 10734329
    Abstract: In some embodiments, an electronic chip includes a doped semiconductor substrate of a first conductivity type, and wells of the second conductivity type on the side of the front face of the chip, in and on which wells circuit elements are formed. One or more slabs of a second conductivity type are buried under the wells and are separated from the wells. The electronic chip also includes, for each buried slab, a biasable section of the second conductivity type, which extends from the front face of the substrate to the buried slab. A first MOS transistor with a channel of the first conductivity type is disposed in the upper portion of each section, where the first transistor is an element of a flip-flop. A circuit is used for detecting a change in the logic level of one of the flip-flops.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: August 4, 2020
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Alexandre Sarafianos, Thomas Ordas
  • Patent number: 10691840
    Abstract: A secure electronic chip including a plurality of biased semiconductor wells and a well biasing current detection circuit. Each of the wells includes a transistor and a bias contact electrically isolated from the transistor. The detection circuit is electrically coupled to each bias contact and is configured to detect a bias current passing through the bias contact that is indicative of an attempt to tamper with the electronic chip.
    Type: Grant
    Filed: April 25, 2016
    Date of Patent: June 23, 2020
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Alexandre Sarafianos, Jimmy Fort, Clement Champeix, Jean-Max Dutertre, Nicolas Borrel
  • Publication number: 20200194318
    Abstract: A semiconductor substrate includes a buried semiconductor layer and semiconductor wells. A device for detecting a possible thinning of the semiconductor substrate via the rear face thereof is formed on and in the semiconductor wells. The device is a non-inverting buffer including an input terminal and an output terminal, the device being powered between a supply terminal and a reference terminal where the buried semiconductor layer provides the supply terminal. A control circuit delivers an input signal in a first state to the input terminal and outputs a control signal indicating a detection of a thinning of the substrate if a signal generated at the output terminal in response to the input signal is in a second state different from the first state.
    Type: Application
    Filed: February 25, 2020
    Publication date: June 18, 2020
    Applicant: STMicroelectronics (Rousset) SAS
    Inventors: Alexandre SARAFIANOS, Abderrezak MARZAKI
  • Patent number: 10685923
    Abstract: An electronic chip including a plurality of buried doped bars and a circuit for detecting an anomaly of an electric characteristic of the bars.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: June 16, 2020
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Alexandre Sarafianos, Jimmy Fort, Thierry Soude
  • Patent number: 10615086
    Abstract: A semiconductor substrate includes a buried semiconductor layer and semiconductor wells. A device for detecting a possible thinning of the semiconductor substrate via the rear face thereof is formed on and in the semiconductor wells. The device is a non-inverting buffer including an input terminal and an output terminal, the device being powered between a supply terminal and a reference terminal where the buried semiconductor layer provides the supply terminal. A control circuit delivers an input signal in a first state to the input terminal and outputs a control signal indicating a detection of a thinning of the substrate if a signal generated at the output terminal in response to the input signal is in a second state different from the first state.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: April 7, 2020
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Alexandre Sarafianos, Abderrezak Marzaki
  • Publication number: 20200020650
    Abstract: An electronic chip includes a first well having a first PN junction located therein, a second buried well located under and separated from the first well, and a first region forming a second PN junction with the second well. A detection circuit is coupled to the first well and configured to output a digital signal that has a first logic value when a potential difference within the first region is above a threshold and a second logic value when the potential difference within the first region is below the threshold.
    Type: Application
    Filed: July 5, 2019
    Publication date: January 16, 2020
    Inventors: Alexandre Sarafianos, Bruno Nicolas, Daniele Fronte
  • Publication number: 20190355673
    Abstract: The disclosure concerns an electronic chip including a resistive region and a first switch of selection of a first area in contact with the resistive region.
    Type: Application
    Filed: May 10, 2019
    Publication date: November 21, 2019
    Inventors: Alexandre SARAFIANOS, Bruno NICOLAS, Daniele FRONTE
  • Publication number: 20190354728
    Abstract: The supply voltage for a module of an integrated circuit managed to support protection against side channel attacks. Upon startup of the integrated circuit, one action from the following actions is selected in response to a command: supplying the module with the supply voltage having a fixed value that is selected from a plurality of predetermined values, or varying the value of the supply voltage in time with a pulsed signal.
    Type: Application
    Filed: May 14, 2019
    Publication date: November 21, 2019
    Applicant: STMicroelectronics (Rousset) SAS
    Inventors: Alexandre SARAFIANOS, Thomas ORDAS, Yanis LINGE, Jimmy FORT
  • Patent number: 10473709
    Abstract: An integrated circuit chip stack includes a main integrated circuit chip and at least one auxiliary integrated circuit chip. The main integrated circuit chip contains circuit components to be protected. The auxiliary integrated circuit chip is mounted to a surface of the main integrated circuit chip and includes a metal plane connected to ground located opposite the circuit components to be protected. The auxiliary integrated circuit chip further includes at least one insulated conductive track forming a tight pattern opposite the circuit components to be protected. A detection circuit is connected to the at least one conductive track and is configured to detect interruption of the at least one insulated conductive track.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: November 12, 2019
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Alexandre Sarafianos, Thomas Ordas
  • Patent number: 10453808
    Abstract: An electronic integrated circuit includes a semiconductor substrate having a rear face. A device for detecting a thinning of the semiconductor substrate via its rear face is formed by a p-n junction that is biased into conduction. Thinning of the substrate is detected by monitoring a current flowing through the p-n junction, and comparing that current to a threshold. In the event the compared current indicates no thinning of the semiconductor substrate, the circuitry for biasing and comparing is deactivated.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: October 22, 2019
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Alexandre Sarafianos, Abderrezak Marzaki
  • Patent number: 10388724
    Abstract: An electronic chip includes a doped semiconductor substrate of a first conductivity type, a doped buried layer of a second conductivity type overlying the substrate, and a first doped well of the first conductivity type overlying the buried layer. Circuit components can be formed at a top surface of the first doped well and separated from the buried layer. A current detector is coupled to the buried layer and configured detect a bias current flowing into or out of the buried layer.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: August 20, 2019
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Clement Champeix, Nicolas Borrel, Alexandre Sarafianos
  • Publication number: 20190244915
    Abstract: A semiconductor substrate of an integrated circuit is protected by a coating. The semiconductor includes a front face and a rear face. To detect a breach of the integrity of a semiconductor substrate of an integrated circuit from the rear face, an opening of the coating facing the rear face of the substrate is detected. In response thereto, an alarm is generated. The detection is performed by making resistance measurements with respect to the semiconductor substrate and comparing the measured resistance to a nominal resistive value of the semiconductor substrate.
    Type: Application
    Filed: February 5, 2019
    Publication date: August 8, 2019
    Applicant: STMicroelectronics (Rousset) SAS
    Inventors: Alexandre SARAFIANOS, Bruno NICOLAS, Daniele FRONTE
  • Patent number: 10361164
    Abstract: An integrated circuit includes a number of components disposed at a surface of a semiconductor body and an interconnect region connecting the components into a functional circuit. A metallic shield is also produced in the interconnect region. A configurable stage is configurable to operate in a receiving antenna configuration or in a detection configuration during which the integrated circuit is configured to detect a presence of an external electromagnetic radiation representative of an attack by injection of faults.
    Type: Grant
    Filed: March 1, 2017
    Date of Patent: July 23, 2019
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Thomas Ordas, Alexandre Sarafianos, Fabrice Marinet, Stephane Chesnais
  • Patent number: 10345142
    Abstract: A laser detection device can be used to protect an integrated circuit. The device includes a detection cell having a buried channel of a first conductivity type extending in a substrate of the integrated circuit. The substrate is of a second conductivity type. The detection cell also has a first electrical connection coupling a first point in the buried channel to a supply voltage rail, and a second electrical connection coupled to a second point in the buried channel. A detection circuit is coupled to the second point in the buried channel via the second electrical connection and adapted to detect a fall in the voltage at the second point.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: July 9, 2019
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Alexandre Sarafianos, Clement Champeix
  • Publication number: 20190172759
    Abstract: A semiconductor substrate includes a buried semiconductor layer and semiconductor wells. A device for detecting a possible thinning of the semiconductor substrate via the rear face thereof is formed on and in the semiconductor wells. The device is a non-inverting buffer including an input terminal and an output terminal, the device being powered between a supply terminal and a reference terminal where the buried semiconductor layer provides the supply terminal. A control circuit delivers an input signal in a first state to the input terminal and outputs a control signal indicating a detection of a thinning of the substrate if a signal generated at the output terminal in response to the input signal is in a second state different from the first state.
    Type: Application
    Filed: December 4, 2018
    Publication date: June 6, 2019
    Applicant: STMicroelectronics (Rousset) SAS
    Inventors: Alexandre SARAFIANOS, Abderrezak MARZAKI