Abstract: An integrated circuit, including: a semiconductor substrate of a first conductivity type; a plurality of regions of the first conductivity type vertically extending from the surface of the substrate, each of the regions being laterally delimited all along its periphery by a region of the second conductivity type; and a device for detecting a variation of the substrate resistance between each region of the first conductivity type and an area for biasing the substrate to a reference voltage.

Abstract: A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate.

Abstract: An integrated circuit, including: a semiconductor substrate of a first conductivity type; a plurality of regions of the first conductivity type vertically extending from the surface of the substrate, each of the regions being laterally delimited all along its periphery by a region of the second conductivity type; and a device for detecting a variation of the substrate resistance between each region of the first conductivity type and an area for biasing the substrate to a reference voltage.

Abstract: A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate.

Abstract: An integrated circuit chip including a plurality of parallel wells of alternated conductivity types formed in the upper portion of a semiconductor substrate of a first conductivity type, and a device of protection against attacks including: between the wells, trenches with insulated walls filled with a conductive material, said trenches extending from the upper surface of the wells to the substrate; and a circuit capable of detecting a modification of the stray capacitance formed between said conductive material and a region of the chip.

Abstract: A device for detecting a laser attack in an integrated circuit chip formed in the upper P-type portion of a semiconductor substrate incorporating an NPN bipolar transistor having an N-type buried layer, including a detector of the variations of the current flowing between the base of said NPN bipolar transistor and the substrate.

Abstract: An integrated circuit including: a semiconductor substrate of a first conductivity type having at least one well of a second conductivity type laterally delimited, on two opposite walls, by regions of the first conductivity type, defined at its surface; at least one region of the second conductivity type which extends in the semiconductor substrate under the well; and a system for detecting a variation of the substrate resistance between each association of two adjacent regions of the first conductivity type.

Abstract: An integrated circuit chip includes: a plurality of parallel wells of alternated conductivity types formed in the upper portion of a semiconductor substrate of a first conductivity type; in each well of the first type, a plurality of MOS transistors having a channel of the second conductivity type, and in each well of the second type, a plurality of MOS transistors having a channel of the first type, transistors of neighboring wells being inverted-connected; and a device of protection against attacks, including: a layer of the second type extending under said plurality of wells, from the lower surface of said wells; and regions of lateral insulation between the wells, said regions extending from the upper surface of the wells to said layer.

Abstract: An integrated circuit, including: a semiconductor substrate of a first conductivity type; a plurality of regions of the first conductivity type vertically extending from the surface of the substrate, each of the regions being laterally delimited all along its periphery by a region of the second conductivity type; and a device for detecting a variation of the substrate resistance between each region of the first conductivity type and an area for biasing the substrate to a reference voltage.

Abstract: An integrated circuit chip including a plurality of parallel wells of alternated conductivity types formed in the upper portion of a semiconductor substrate of a first conductivity type, and a device of protection against attacks including: between the wells, trenches with insulated walls filled with a conductive material, said trenches extending from the upper surface of the wells to the substrate; and a circuit capable of detecting a modification of the stray capacitance formed between said conductive material and a region of the chip.

Abstract: An integrated circuit chip includes: a plurality of parallel wells of alternated conductivity types formed in the upper portion of a semiconductor substrate of a first conductivity type; in each well of the first type, a plurality of MOS transistors having a channel of the second conductivity type, and in each well of the second type, a plurality of MOS transistors having a channel of the first type, transistors of neighboring wells being inverted-connected; and a device of protection against attacks, including: a layer of the second type extending under said plurality of wells, from the lower surface of said wells; and regions of lateral insulation between the wells, said regions extending from the upper surface of the wells to said layer.