Abstract: An acoustic wave detector may include: an exterior housing with an exterior housing wall, a gas chamber located within the exterior housing and configured to receive a gas therein. The exterior housing wall may include an aperture providing a gas passage between the gas chamber and the exterior of the acoustic wave detector. The acoustic wave detector may further include an excitation element configured to selectively excite gas molecules of a specific type in the gas received in the gas chamber in a time-varying fashion, thereby generating acoustic waves in the gas, and an acoustic wave sensor configured to detect the acoustic waves generated in the gas and acoustic waves generated outside of the acoustic wave detector. The acoustic wave sensor may have an acoustic port overlapping with the aperture in the exterior housing wall.

Abstract: An acoustic wave detector may include: an exterior housing with an exterior housing wall, a gas chamber located within the exterior housing and configured to receive a gas therein. The exterior housing wall may include an aperture providing a gas passage between the gas chamber and the exterior of the acoustic wave detector. The acoustic wave detector may further include an excitation element configured to selectively excite gas molecules of a specific type in the gas received in the gas chamber in a time-varying fashion, thereby generating acoustic waves in the gas, and an acoustic wave sensor configured to detect the acoustic waves generated in the gas and acoustic waves generated outside of the acoustic wave detector. The acoustic wave sensor may have an acoustic port overlapping with the aperture in the exterior housing wall.

Abstract: In accordance with an embodiment, a MEMS device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a conductive layer, which is at least partially arranged in the low pressure region or extends in the low pressure region. The conductive layer includes a segmentation providing an electrical isolation between a first portion of the conductive layer and a second portion of the conductive layer.

Abstract: A transducer structure including a carrier with an opening and a suspended structure mounted on the carrier which extends at least partially over the opening in the carrier is disclosed. The transducer structure may further include configuring the suspended structure to provide an electrostatic field between the suspended structure and the carrier by changing a distance between the suspended structure and the carrier. Alternatively, the suspended structure may be configured to change the distance between the suspended structure and the carrier in response to an electrostatic force provided between the suspended structure and the carrier.

Abstract: A device for detecting acoustic waves may include a housing having a housing wall with an inner surface, and an acoustic wave sensor provided at least partially inside the housing and configured to detect acoustic waves. The inner surface of the housing wall is made in at least half of its entire area of a thermally insulating material.

Abstract: Aspects of a microelectromechanical device, an array of microelectromechanical devices, a method of manufacturing a microelectromechanical device, and a method of operating a microelectromechanical device, are discussed herein. The microelectromechanical device may include: a substrate; a diaphragm mechanically coupled to the substrate, the diaphragm comprising a stressed region to buckle the diaphragm into one of two geometrically stable positions; an actuator mechanically coupled to the diaphragm, the actuator comprising a piezoelectric layer over the diaphragm; a controller configured to provide an electrical control signal in response to a digital sound input; wherein the actuator is configured to receive the electrical control signal to exert a mechanical piezoelectric force on the diaphragm via the piezoelectric layer to move the diaphragm to create a sound wave.

Abstract: A device for detecting acoustic waves may include a housing having a housing wall with an inner surface, and an acoustic wave sensor provided at least partially inside the housing and configured to detect acoustic waves. The inner surface of the housing wall is made in at least half of its entire area of a thermally insulating material.

Abstract: According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the transducer frame includes forming a support portion adjacent a cavity and forming a first set of comb-fingers extending from the support portion. The method of forming a MEMS transducer further includes forming a spring support from an anchor to the support portion and forming a second set of comb-fingers in the layer of monocrystalline silicon. The second set of comb-fingers is interdigitated with the first set of comb-fingers.

Abstract: A method for forming a microelectromechanical device may provide forming a first layer at least one of in or over a semiconductor carrier; forming a second layer at least one of in or over at least a central region of the first layer, such that a peripheral region of the first layer is at least partially free of the second layer; removing material under at least a central region of the second layer to release at least one of the central region of the second layer or a central region of the first layer; and/or removing material under at least the peripheral region of the first layer to such that the second layer is supported by the semiconductor carrier via the first layer.

Abstract: According to an embodiment, a sensor package includes an electrically insulating substrate including a cavity in the electrically insulating substrate, an ambient sensor, an integrated circuit die embedded in the electrically insulating substrate, and a plurality of conductive interconnect structures coupling the ambient sensor to the integrated circuit die. The ambient sensor is supported by the electrically insulating substrate and arranged adjacent the cavity.

Abstract: According to an embodiment, an optical MEMS transducer includes a diffraction structure including alternating first reflective elements and openings arranged in a first plane, a reflection structure including second reflective elements and configured to deflect with respect to the diffraction structure, and an optical element configured to direct a first optical signal at the diffraction structure and the reflection structure and to receive a second optical signal from the diffraction structure and the reflection structure. The second reflective elements are arranged in the first plane when the reflection structure is at rest. Other embodiments include corresponding systems and apparatus, each configured to perform various embodiment methods.

Abstract: In accordance with an embodiment, a MEMS device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a conductive layer, which is at least partially arranged in the low pressure region or extends in the low pressure region. The conductive layer includes a segmentation providing an electrical isolation between a first portion of the conductive layer and a second portion of the conductive layer.

Abstract: A microelectromechanical system and a method for manufacturing a microelectromechanical system including: a substrate; a microelectromechanical device including: a diaphragm configured as a transducer to convert between electrical energy and mechanical energy and an electrode coupled to the diaphragm; a support region mechanically coupling the microelectromechanical device to the substrate, wherein the support region is confined to a first continuous region spanning an arc of less than 90 degrees around a perimeter of the diaphragm; and a second continuous region free from mechanical support of the microelectromechanical device to the substrate, the second continuous region spanning the perimeter of the diaphragm from one end of the support region to the other end of the support region; wherein the support region cantilevers the microelectromechanical device and the second continuous region mechanically decouples the microelectromechanical device from the substrate.

Abstract: A microelectromechanical device may include: a semiconductor carrier; a microelectromechanical element disposed in a position distant to the semiconductor carrier; wherein the microelectromechanical element is configured to generate or modify an electrical signal in response to a mechanical signal and/or is configured to generate or modify a mechanical signal in response to an electrical signal; at least one contact pad, which is electrically connected to the microelectromechanical element for transferring the electrical signal between the contact pad and the microelectromechanical element; and a connection structure which extends from the semiconductor carrier to the microelectromechanical element and mechanically couples the microelectromechanical element with the semiconductor carrier.

Abstract: A microelectromechanical device may include: a semiconductor carrier; a microelectromechanical element disposed in a position distant to the semiconductor carrier; wherein the microelectromechanical element is configured to generate or modify an electrical signal in response to a mechanical signal and/or is configured to generate or modify a mechanical signal in response to an electrical signal; at least one contact pad, which is electrically connected to the microelectromechanical element for transferring the electrical signal between the contact pad and the microelectromechanical element; and a connection structure which extends from the semiconductor carrier to the microelectromechanical element and mechanically couples the microelectromechanical element with the semiconductor carrier.

Abstract: According to an embodiment, a micro-fabricated test structure includes a structure mechanically coupled between two rigid anchors and disposed above a substrate. The structure is released from the substrate and includes a test layer mechanically coupled between the two rigid anchors. The test layer includes a first region having a first cross-sectional area and a constricted region having a second cross-sectional area smaller than the first cross-sectional area. The structure also includes a first tensile stressed layer disposed on a surface of the test layer adjacent the first region.

Abstract: A MEMS microphone and a method for manufacturing a MEMS microphone are disclosed. Embodiments of the invention provide a MEMS microphone including a MEMS microphone structure having at least one counter electrode structure and a diaphragm structure deflectable with respect to the counter electrode structure and a thermocouple arranged at the MEMS microphone structure.

Abstract: A MEMS device includes a membrane comprising a first plurality of fingers. A counter electrode arrangement includes a second plurality of fingers disposed in a interdigitated relationship with the first plurality of fingers of the membrane. A deflector is configured to deflect the membrane such that the first and second plurality of fingers are displaced in a position excluding maximum overlapping of surfaces of the fingers.

Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The MEMS transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. The gas sensitive material has an electrical property that is dependent on a concentration of a target gas.

Abstract: A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.