Patents by Inventor Ali Salih

Ali Salih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8339758
    Abstract: A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.
    Type: Grant
    Filed: May 1, 2008
    Date of Patent: December 25, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Mingjiao Liu, Ali Salih, Emmanuel Saucedo-Flores, Suem Ping Loo
  • Patent number: 8309422
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.
    Type: Grant
    Filed: September 27, 2010
    Date of Patent: November 13, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: David D. Marreiro, Sudhama C. Shastri, Ali Salih, Mingjiao Liu, John Michael Parsey, Jr.
  • Publication number: 20120278052
    Abstract: A system and method for determining fluid flow of compressible and non-compressible liquids is described. The system may include input means for receiving a model of an object defined as a plurality of cells having a plurality of nodes P, and a processor coupled to a memory. The processor may be configured for: discretizing a partial differential equation (PDE) corresponding to the received model; for each node P: (i) locating all neighbouring cells that share the node P, each of the neighbouring cells having a cell center; (ii) approximating the PDE at the cell center of the neighbouring cells using the discretized PDE; and (iii) updating a solution of the PDE at the node P by using the approximated discretized PDE at all the neighbouring cell centers; and iteratively updating the solution for all the nodes P from an initial guess until a convergence criterion is satisfied.
    Type: Application
    Filed: April 25, 2012
    Publication date: November 1, 2012
    Inventors: Ronald BARRON, Ali Salih, James Jianmin Situ
  • Patent number: 8236625
    Abstract: In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. In another embodiment, the ESD devices has an asymmetrical, characteristic.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: August 7, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Ali Salih, Mingjiao Liu
  • Patent number: 8188572
    Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: May 29, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Steven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri
  • Publication number: 20120091504
    Abstract: In one embodiment, a bi-directional ESD device is formed to have a third harmonic at frequencies no less than about one gigahertz wherein the third harmonic has a magnitude that is no greater than about minus thirty five dBm.
    Type: Application
    Filed: October 19, 2010
    Publication date: April 19, 2012
    Inventors: T. Jordan Davis, Ali Salih
  • Patent number: 8138520
    Abstract: In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: March 20, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Mark Duskin, Suem Ping Loo, Ali Salih
  • Publication number: 20120064675
    Abstract: In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. In another embodiment, the ESD devices has an asymmetrical, characteristic.
    Type: Application
    Filed: November 17, 2011
    Publication date: March 15, 2012
    Inventors: Ali Salih, Mingjiao Liu
  • Patent number: 8110448
    Abstract: In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes.
    Type: Grant
    Filed: August 17, 2010
    Date of Patent: February 7, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Ali Salih, Mingjiao Liu, Thomas Keena
  • Patent number: 8093133
    Abstract: Transient voltage suppressor and method for manufacturing the transient voltage suppressor having a dopant or carrier concentration in a portion of a gate region near a Zener region that is different from a dopant concentration in a portion of a gate region that is away from the Zener region.
    Type: Grant
    Filed: April 4, 2008
    Date of Patent: January 10, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Emmanuel Saucedo-Flores, Mingjiao Liu, Francine Y. Robb, Ali Salih
  • Patent number: 8089095
    Abstract: In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. In another embodiment, the ESD devices has an asymmetrical characteristic.
    Type: Grant
    Filed: August 20, 2010
    Date of Patent: January 3, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Ali Salih, Mingjiao Liu
  • Publication number: 20110266591
    Abstract: In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.
    Type: Application
    Filed: July 7, 2011
    Publication date: November 3, 2011
    Inventors: Mark Duskin, Suem Ping Loo, Ali Salih
  • Patent number: 8039359
    Abstract: In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
    Type: Grant
    Filed: February 27, 2009
    Date of Patent: October 18, 2011
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Thomas Keena, Ki Chang, Francine Y. Robb, Mingjiao Liu, Ali Salih, John Michael Parsey, Jr., George Chang
  • Patent number: 8003478
    Abstract: In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.
    Type: Grant
    Filed: June 6, 2008
    Date of Patent: August 23, 2011
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Mark Duskin, Suem Ping Loo, Ali Salih
  • Publication number: 20110198728
    Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
    Type: Application
    Filed: April 26, 2011
    Publication date: August 18, 2011
    Inventors: Steven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri
  • Patent number: 7955941
    Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
    Type: Grant
    Filed: September 11, 2008
    Date of Patent: June 7, 2011
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Steven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri
  • Publication number: 20110021009
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.
    Type: Application
    Filed: September 27, 2010
    Publication date: January 27, 2011
    Inventors: David D. Marreiro, Sudhama C. Shastri, Ali Salih, Mingjiao Liu, John Michael Parsey, JR.
  • Publication number: 20100314660
    Abstract: In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. In another embodiment, the ESD devices has an asymmetrical characteristic.
    Type: Application
    Filed: August 20, 2010
    Publication date: December 16, 2010
    Inventors: Ali Salih, Mingjiao Liu
  • Publication number: 20100311211
    Abstract: In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes.
    Type: Application
    Filed: August 17, 2010
    Publication date: December 9, 2010
    Inventors: Ali Salih, Mingjiao Liu, Thomas Keena
  • Patent number: 7842969
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: November 30, 2010
    Assignee: Semiconductor Components Industries, LLC
    Inventors: David D. Marreiro, Sudhama C. Shastri, Ali Salih, Mingjiao Liu, John Michael Parsey, Jr.