Abstract: The novel process forms a first recess, such as a contact hole, within a first dielectric layer upon a semiconductor substrate. At least one diffusion barrier layer, selected from a group consisting of ceramics, metallics, and intermetallics, is formed within the first recess and at least partially conformably formed upon the first dielectric layer. A first electrically conductive layer is then formed within the recess over a said diffusion barrier layer. Preferably, the first electrically conductive layer is substantially composed of tungsten. The first electrically conductive layer is planarized above the recess thereby forming a top surface thereof. A second dielectric layer is formed over the first dielectric layer and said first electrically conductive layer. A second recess is formed in the second dielectric layer. The second recess extends from an upper surface of the second dielectric layer to the top surface of the first electrically conductive layer.

Abstract: Improved methods for filling openings in silicon substrates with copper and the metal interconnects so produced are provided. One method involves the use of a Ti.sub.x Al.sub.y N.sub.z barrier layer which is stable to the high temperatures required to reflow copper after PVD deposition. Another method involves the use of an aluminum wetting layer between a barrier layer and the copper which effectively lowers the temperature at which copper reflows and therefore allows the use of typical barrier layers.

Abstract: The present invention provides methods of producing an anti-reflective layer on a semiconductor wafer/device and wafers/devices including that anti-reflective layer. The anti-reflective layer is produced by annealing layers of titanium and aluminum on a wafer/device to provide a roughened surface that significantly reduces reflectivity to improve the accuracy and definition provided by optical lithography processes.

Abstract: Disclosed is a method for in situ formation of titanium aluminide. The disclosed method is directed to overcoming voiding problems which result in conventional titanium and aluminum metal interconnect stacks. The steps of the method comprise first providing a silicon substrate, which typically comprises an in-process integrated circuit wafer. Next, an insulating passivation layer is provided on the silicon substrate. The next step is the sputtering of a titanium layer of a given thickness over the passivation. Subsequently, an aluminum film of three times the thickness of the titanium layer is sputtered over the titanium layer. The next step comprises annealing the titanium layer and the aluminum film in situ in a metal anneal chamber to form titanium aluminide. Following the in situ anneal, the remainder of the needed aluminum is sputtered over the titanium aluminide and a further passivation layer of titanium nitride is then sputtered over the aluminum.