Abstract: A detection device includes a frame, a transport mechanism, detection mechanisms, and a grasping mechanism. The transport mechanism includes a feeding line, a first flow line, and a second flow line arranged in parallel on the frame. The detection mechanisms are arranged on the frame and located on two sides of the transport mechanism. The grasping mechanism is arranged on the frame and used to transport workpieces on the feeding line to the detection mechanisms, transport qualified workpieces to the first flow line, and transport unqualified workpieces to the second flow line.

Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.

Abstract: Embodiments include methods for a user equipment (UE) configured to operate in a radio access network (RAN). Such methods include receiving, from a radio node in the RAN, a new feedback indicator (NFI) that indicates whether acknowledgement signaling previously scheduled for transmission by the UE was received by the radio node. The acknowledgement signaling is associated with one or more first downlink (DL) hybrid ARQ (HARQ) processes. Such methods include, when the NFI indicates the acknowledgement signaling was not received by the RAN node, selecting a first HARQ codebook to be used for encoding the acknowledgement signaling together with further acknowledgement signaling associated with one or more second DL HARQ processes. Such methods include, using the selected first HARQ codebook, encoding the acknowledgement signaling and the further acknowledgement signaling to obtain first encoded information and transmitting the first encoded information to the radio node via an uplink (UL) channel.

Abstract: In a medical image recognition method, applied to a computer device, a to-be-recognized medical image set is obtained, where the to-be-recognized medical image set includes at least one to-be-recognized medical image. A to-be-recognized area corresponding to each to-be-recognized medical image in the to-be-recognized medical image set is extracted. The to-be-recognized area is a part of the to-be-recognized medical image. A recognition result of each to-be-recognized area through a medical image recognition model is determined. The medical image recognition model is obtained through training according to a medical image sample set. The medical image sample set includes at least one medical image sample, and each medical image sample carries corresponding annotation information. The annotation information is used for representing a type of the medical image sample, and the recognition result is used for representing the a of the to-be-recognized medical image.

Abstract: A cylindrical battery cell, a battery and a method for preparing a cylindrical battery cell are provided. The cylindrical battery cell includes a cylindrical can; a jellyroll structure which is arranged inside the cylindrical can; a cathode disk which is arranged on a first side of the cylindrical can in an axial direction; an anode ring which is arranged on the first side of the cylindrical can in the axial direction; and an insulation element which is arranged between the cathode disk and the anode ring. Therefore, the current path in the cylindrical battery cell is shortened, and additional heat-loss and electrical resistance are decreased, furthermore, the wall thickness of the cylindrical can does not need to be increased, which will improve filling ratio and efficiency of the cylindrical battery cell.

Abstract: Some of the present implementations provide a method for a user equipment (UE) for receiving a power saving signal. The method receives, from a base station, a power saving signal comprising a minimum applicable K0 (K0min) that indicates a minimum scheduling offset restriction between a physical downlink control channel (PDCCH) and a physical downlink shared channel (PDSCH). The method determines an application delay based on a predefined value. The method then applies the minimum scheduling offset restriction after the application delay.

Abstract: The present specification discloses video matching. In a computer-implemented method, a plurality of feature vectors of a target video is obtained. A candidate video similar to the target video is retrieved from a video database based on the plurality of feature vectors of the target video. A time domain similarity matrix feature map is constructed between the target video and the candidate video based on the target video and the candidate video. Using the time domain similarity matrix feature map as an input into a deep learning detection model, a video segment matching the target video in the candidate video and a corresponding similarity is output.

Abstract: Provided herein are antibodies, or antigen-binding portions thereof, that specifically bind and inhibit TREM-1 signaling, wherein the antibodies do not bind to one or more Fc?Rs and do not induce the myeloid cells to produce inflammatory cytokines. Also provided are uses of such antibodies, or antigen-binding portions thereof, in therapeutic applications, such as treatment of autoimmune diseases.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A system and method for determining a Physical Uplink Control Channel (PUCCH) power control parameter h(nCQI,nHARQ) for two Carrier Aggregated (CA) PUCCH formats—PUCCH format 3 and channel selection. The value of h(nCQI,nHARQ) may be based on only a linear function of nHARQ for both of the CA PUCCH formats. Based on the CA PUCCH format configured for the User Equipment (UE), the e-Node B (eNB) may instruct the UE to select or apply a specific linear function of nHARQ as a value for the power control parameter h(nCQI,nHARQ), so as to enable the UE to more accurately establish transmit power of its PUCCH signal. Values for another PUCCH power control parameter—?F_PUCCH(F)—are also provided for use with PUCCH format 3. A new offset parameter may be signaled for each PUCCH format that has transmit diversity configured.

Abstract: Apparatus and methods are provided for sidelink (SL) transmission in SL unlicensed frequency bands (SL-U). In one novel aspect, one and/or multiple starting symbols within a slot is supported for SL-U to start a transmission. In one embodiment, the physical sidelink control channel (PSCCH) is configured to be transmitted on each starting symbol within a slot. In another embodiment, only physical sidelink shared channel (PSSCH) is transmitted on the starting symbols other than the first starting symbol within a slot. In one novel aspect, PSCCH is transmitted within one sub-channel. In one embodiment, the PSCCH is transmitted on a fixed subchannel of each RB set of the occupied BWP. In another embodiment, the PSCCH is transmitted on a fixed subchannel of one preconfigured RB set. In another novel aspect, the UE sets the CAPC value to be one for the physical sidelink feedback channel (PSFCH).

Abstract: Disclosed is a thermal conduction-electrical conduction isolated circuit board with a ceramic substrate and a power transistor embedded, mainly comprising: a dielectric material layer, a heat-dissipating ceramic block, a securing portion, a stepped metal electrode layer, a power transistor, and a dielectric material packaging, wherein a via hole is formed in the dielectric material layer, the heat-dissipating ceramic block is correspondingly embedded in the via hole, the heat-dissipating ceramic block has a thermal conductivity higher than that of the dielectric material layer and a thickness less than that of the dielectric material layer, the stepped metal electrode layer conducts electricity and heat for the power transistor, the dielectric material packaging is configured to partially expose the source connecting pin, drain connecting pin, and gate connecting pin of the encapsulated stepped metal electrode layer.

Abstract: A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.

Abstract: One or more embodiments described herein relate to selective methods for fabricating devices and structures. In these embodiments, the devices are exposed inside the process volume of a process chamber. Precursor gases are flowed in the process volume at certain flow ratios and at certain process conditions. The process conditions described herein result in selective epitaxial layer growth on the {100} planes of the crystal planes of the devices, which corresponds to the top of each of the fins. Additionally, the process conditions result in selective etching of the {110} plane of the crystal planes, which corresponds to the sidewalls of each of the fins. As such, the methods described herein provide a way to grow or etch epitaxial films at different crystal planes. Furthermore, the methods described herein allow for simultaneous epitaxial film growth and etch to occur on the different crystal planes.

Abstract: A method of making a semiconductor device includes patterning a conductive layer over a substrate to define a conductive pad having a first width. The method includes depositing a passivation layer, wherein the passivation layer directly contacts the conductive pad. The method includes depositing a protective layer over the passivation layer, wherein the protective layer directly contacts the conductive pad. The method includes depositing an under-bump metallization (UBM) layer directly contacting the conductive pad, wherein the UBM layer has a second width greater than the first width. The method includes depositing a mask layer over the UBM layer; and forming an opening in the mask layer wherein the opening has the second width. The method includes forming a conductive pillar in the opening on the UBM layer; and etching the UBM layer using the conductive pillar as a mask, wherein the etched UBM layer has the second width.

Abstract: An antenna module is disposed to an electronic device includes a fixed member, a rotating component, a reflector, a director, and an antenna unit. The electronic device includes a first body and a second body. The first body has a first surface and a second surface. The fixed member is disposed to the first body fixedly. The rotating component is connected to the fixed member rotatably. The reflector and the director are disposed to the rotating component. The antenna unit is disposed to the first body and between the reflector and the director. When the first body and the second body rotate relative to each other, the reflector is located between the antenna unit and one of the first surface and the second surface, and the director is located between the antenna unit and another one of the first surface and the second surface.

Abstract: A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.

Abstract: An antenna device includes a first insulation layer, a defected metal layer, a second insulation layer, and a plurality of radiators. The defected metal layer is disposed on the first insulation layer, and the defected metal layer has a plurality of recess features which are arranged with uniform pitches. The second insulation layer is disposed on the first insulation layer and the defected metal layer. The radiators are disposed on the second insulation layer, and each radiator has a feeding portion and a grounding portion.

Abstract: The disclosure provides a limit device and a robot using the same. The limit device comprises a first connecting member, a transmission rod and a second connecting member. The first connecting member comprising a first main body portion and two first connecting elements. The two first connecting elements are arranged at intervals. The two first connecting elements are respectively connected to the first main body. The transmission rod comprising a first end and a second end. The first end and the second end are arranged at intervals. The first end penetrates through one of the two first connecting elements. The second end penetrates through the other one of the two first connecting element. The second connecting member provided with two indexing buckles. The two indexing buckles are arranged at intervals, each of the indexing buckles comprises a first limiting groove and a second limiting groove.

Abstract: A method for PDCCH monitoring performed by a UE is provided. The method includes performing the PDCCH monitoring in a first group associated with at least one first PDCCH monitoring configuration; receiving, from a base station, DCI comprising an indicator; performing the PDCCH monitoring in a second group associated with at least one second PDCCH monitoring configuration; and stopping the PDCCH monitoring in the first group after receiving the indicator.