Abstract: Provided herein are antibodies that bind to the alpha subunit of an IL-7 receptor (IL-7R?). Also provided are uses of these antibodies in therapeutic applications, such as treatment of inflammatory diseases. Further provided are cells that produce the antibodies, polynucleotides encoding the heavy and/or light chain regions of the antibodies, and vectors comprising the polynucleotides.

Abstract: A water cooling head with sparse and dense fins, including a main body, a first fin set and a second fin set. Wherein a chamber is formed inside the main body, the main body has a first plate and a second plate, the main body forms an inlet channel and an outlet channel, so that the cooling water passes through the chamber. The first fin set and the second fin set are arranged in the chamber, and the first fin set and the second fin set are connected to the first plate respectively. The first fin set comprises several first fins spaced apart, the first fins divide the chamber to form several first channels. The second fin set comprises several second fins spaced apart, the second fins divide the chamber to form several second channels. The water cooling head can increase the overall heat sinking efficiency.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A method of fabricating a semiconductor package includes providing a substrate having at least one contact and forming a redistribution layer on the substrate. The formation of the redistribution layer includes forming a dielectric material layer over the substrate and performing a double exposure process to the dielectric material layer. A development process is then performed and a dual damascene opening is formed in the dielectric material layer. A seed metallic layer is formed over the dual damascene opening and over the dielectric material layer. A metal layer is formed over the seed metallic layer. A redistribution pattern is formed in the first dual damascene opening and is electrically connected with the at least one contact.

Abstract: Disclosed in the present application are a locating method for an uplink time difference of arrival, and an apparatus thereof.

Abstract: A method and a device of transmitting a power saving signal, a method and a device of detecting a power saving signal are provided. A method applied to a base station includes receiving power-saving-signal indication information reported by a first terminal, the power-saving-signal indication information being at least used to indicate that the first terminal supports or does not support reception of the power saving signal; sending the power saving signal to the first terminal when the power-saving-signal indication information indicates that the first terminal supports reception of the power saving signal.

Abstract: The present disclosure provides a thin film including a first thermoplastic polyolefin (TPO) elastomer which is anhydride-grafted. The present disclosure further provides a method for manufacturing the thin film, a laminated material and a method for adhesion.

Abstract: A display substrate has an active area which includes a photosensitive region with a light-transmitting channel. The display substrate includes a base, a pixel circuit layer, a first insulating layer and a conductive light-shielding layer. The pixel circuit layer includes pixel circuits and at least one pixel circuit includes a first thin film transistor and a second thin film transistor. The first insulating layer has a first via hole. The conductive light-shielding layer includes a conductive light-shielding pattern that has a first light-transmitting hole. Orthogonal projections of the first light-transmitting hole and of a gap region between the first thin film transistor and the second thin film transistor have a first overlapping region, which the light-transmitting channel penetrates. The conductive light-shielding pattern is coupled with a source electrode or a drain electrode of the first thin film transistor through the first via hole.

Abstract: A memory device includes a main array comprising main memory cells; a redundancy array comprising redundancy memory cells; and write circuitry configured to perform a first programming operation on a main memory cell, to detect whether a current of the main memory cell exceeds a predefined current threshold during the first programming operation, and to disable a second programming operation for a redundancy memory cell if the current of the main memory cell exceeds the predefined current threshold during the first programming operation.

Abstract: The present disclosure relates to data flow processing methods and devices. One example method includes obtaining a dependency relationship and an execution sequence of operating a data flow by a plurality of processing units, generating synchronization logic based on the dependency relationship and the execution sequence, and inserting the synchronization logic into an operation pipeline of each of the plurality of processing unit to generate executable code.

Abstract: A system may include an information handling resource, a liquid cooling system for providing cooling of the information handling resource, a management controller for providing out-of-band management of the system, and a strain gauge sensor within a fluidic pathway of the liquid cooling system and communicatively coupled to the management controller and configured to measure a mechanical strain upon the strain gauge sensor in response to flow of fluid through a fluidic channel of the liquid cooling system and communicate one or more signals to the management controller indicative of the mechanical strain.

Abstract: This application relates to a tissue nodule detection and tissue nodule detection model training method, apparatus, device, storage medium and system.

Abstract: An electronic device with an auxiliary illumination function and an operation method thereof are provided. The electronic device includes a first body, a display screen, a light-emitting module, and a processing module. The first body has a first surface. The first surface includes a screen area and a border area, and the border area surrounds the screen area. The display screen is disposed in the screen area of the first body. The light-emitting module is disposed in the border area of the first body. The processing module is disposed in the electronic device and is coupled to the display screen and the light-emitting module. The processing module activates the light-emitting module in the border area to emit an auxiliary illumination light according to a required condition.

Abstract: This document describes systems and techniques directed at an external wide-angle lens for imagers in electronic devices. An imager is disclosed that includes an image sensor and a lens stack, the lens stack including an external wide-angle lens, an internal lens, and four or more intermediate lenses. The imager has a first ratio of a projection at a vertex of the external wide-angle lens divided by a maximum focused dimension of the focal area being less than or equal to 0.15, a second ratio of a total length of the lens stack divided by the maximum focused dimension being less than or equal to 7.0, or a third ratio of a total transmission length of the imager divided by an entrance pupil diameter of the external wide-angle lens being between 1.2 and 2.6.

Abstract: A method of fabricating a semiconductor package includes providing a substrate having at least one contact and forming a redistribution layer on the substrate. The formation of the redistribution layer includes forming a dielectric material layer over the substrate and performing a double exposure process to the dielectric material layer. A development process is then performed and a dual damascene opening is formed in the dielectric material layer. A seed metallic layer is formed over the dual damascene opening and over the dielectric material layer. A metal layer is formed over the seed metallic layer. A redistribution pattern is formed in the first dual damascene opening and is electrically connected with the at least one contact.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes: providing a substrate comprising an array region and a peripheral region, wherein the array region and the peripheral region define a stepped structure, performing a deposition process to form a passivation layer over the array region and the peripheral region; performing an etching process to remove a portion of the passivation layer over the array region; and performing a chemical mechanical polishing process so that the passivation layer has a substantially continuous surface over the array region and the peripheral region.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes: providing a substrate comprising an array region and a peripheral region, wherein the array region and the peripheral region define a stepped structure, performing a deposition process to form a passivation layer over the array region and the peripheral region; performing an etching process to remove a portion of the passivation layer over the array region; and performing a chemical mechanical polishing process so that the passivation layer has a substantially continuous surface over the array region and the peripheral region.

Abstract: An integrated circuit (IC) package includes a logic die, a substrate, a memory die positioned between the logic die and the substrate, and a power distribution structure configured to electrically couple the logic die to the substrate. The power distribution structure includes a plurality of conductive segments positioned between the logic die and the memory die, a plurality of bump structures positioned between the memory die and the substrate, and a plurality of through-silicon vias (TSVs) electrically coupled to the plurality of conductive segments and the plurality of bump structures, and a TSV of the plurality of TSVs extends through, and is electrically isolated from, a memory macro of the memory die.