Abstract: The present disclosure provides a heat exchange system including a heat exchange module, a drive module, a buffer module, and a control module. The heat exchange module includes a first circulation pipe. A part of the first circulation pipe is penetrated into a cabinet. The driving module is connected to the heat exchange module and configured to drive a first fluid in the first circulation pipe to flow along the pipeline. The buffer module is in fluid communication with the first circulation pipe and includes a first control valve and a first storage space. The first control valve is between the first circulation pipe and the first storage space. The control module is electrically connected to the drive module and the buffer module. The control module includes a sensing device. The control module controls the first control valve and the drive module.

Abstract: A two-step etch technique is used in a continuous polysilicon on oxide definition edge (CPODE) recess process to form a recess in which the CPODE structure is to be formed. The two-step process includes performing a first etch operation using an isotropic etch technique, in which a recess in a dummy gate structure is formed to a first depth. A second etch operation is performed using anisotropic etch technique to form the recess to a second depth. The use of the anisotropic etch technique results in a highly directional (e.g., vertical) etch of the dummy gate structure in the second etch operation. The highly directional etch provided by the anisotropic etch technique at or near the bottom of the dummy gate structure reduces, minimizes, and/or prevents etching into adjacent portions of an interlayer dielectric (ILD) layer and/or into source/drain region(s) under the portions of the ILD layer.

Abstract: A protective film with an antibacterial property for manufactured products and for constantly-handled objects and equipment is formed by solidifying a water-based slurry. The water-based slurry includes 60 parts to 80 parts by weight of a water-based polyurethane, 1 part to 1.5 parts by weight of a dispersant, 1 part to 10 parts by weight of an antibacterial agent, 0.5 parts by weight of a defoamer, and 9 parts to 32 parts by weight of water. The protective film can be sprayed, applied in a dip, or brushed-on, having good adhesion to a surface but is peelable.

Abstract: A motor, a cooling device, and a cooling method are disclosed. The cooling device is mounted on a stator of the motor. The cooling device includes a sleeve and a spiral duct. A wall of the sleeve has a spiral groove extending along the sleeve. The sleeve is sleeved onto the stator. The spiral duct is mounted in the spiral groove. The spiral duct has a first spiral form corresponding to the spiral groove, so that the spiral duct is correspondingly installed in the spiral groove. The spiral duct has a second spiral form extending along the spiral duct. A twisted spiral cooling channel is formed along the spiral pathway. A cooling fluid flowing through the twisted spiral cooling channel is subjected to the continuously changing cross-section of the twisted spiral cooling channel to enhance the swirl intensity, thereby improving the convection heat transfer effectiveness.

Abstract: A motor and a coreless stator coil winding unit thereof are disclosed. The coreless stator coil winding unit includes an overlapping coil winding assembly and a non-overlapping coil winding assembly. The overlapping coil winding assembly includes a plurality of first coils arranged annularly and a plurality of second coils arranged annularly. The first coils and the second coils overlap with a phase difference. The non-overlapping coil winding assembly includes a plurality of third coils arranged annularly. The third coils are each located between an adjacent one of the first coils and an adjacent one of the second coils. Thus, the back electromotive force constant and torque constant of the motor have a better performance.

Abstract: A water-based protective film which is largely immune to static electricity includes 60 to 70 parts of a water-based polyurethane by weight, 12 to 17 parts of an emulsion dispersant by weight, 3 to 8 parts of an antistatic agent by weight, and 10 to 20 parts of water by weight. A preparation method of the water-based protective film is also disclosed, the water-based protective film, which is in a form of slurry before drying, can be applied to an object surface by spraying, by immersion, or by brushing.

Abstract: The present disclosure provides a stator and winding assembly thereof. The stator includes a stator core including a tube wall and a hollow portion and a winding assembly. The winding assembly is disposed in the hollow portion and includes a first winding group and a second winding group. The first winding group includes plural winding units disposed on an inner side of the tube wall and defining an outer layer. The second winding group includes plural winding units disposed on an inner side of the outer layer and defining an inner layer. Any one of the projections of the winding units at the inner layer is partially overlapped with the projections of the two adjacent winding units at the outer layer. A number of turns of the winding units of the first winding group is equal to or greater than that of the winding units of the second winding group.

Abstract: A motor and a coreless stator coil winding unit thereof are disclosed. The coreless stator coil winding unit includes an overlapping coil winding assembly and a non-overlapping coil winding assembly. The overlapping coil winding assembly includes a plurality of first coils arranged annularly and a plurality of second coils arranged annularly. The first coils and the second coils overlap with a phase difference. The non-overlapping coil winding assembly includes a plurality of third coils arranged annularly. The third coils are each located between an adjacent one of the first coils and an adjacent one of the second coils. Thus, the back electromotive force constant and torque constant of the motor have a better performance.

Abstract: A motor commutation waveform generating circuit is provided. The motor commutation waveform generating circuit includes: an edge detection circuit, configured to receive sensing signals of the motor and derive a clock signal indicating a commutation switching point of the motor; an angle cutting circuit, controlled by the clock signal to generate an angle indication pulse indicating a rotation angle of the motor; a synthetic wave generating circuit, using the angle indication pulse to sequentially change waveform voltages corresponding to required angles and output them in segments; and a signal combining circuit, controlled by the clock signal to combine waveform voltage signals generated by the synthetic wave generating circuit, thereby obtaining a plurality of synthetic waveforms provided to a drive control system of the motor for drive control after pulse width modulation.

Abstract: In a method of manufacturing a semiconductor device including a Fin FET, a fin structure extending in a first direction is formed over a substrate. An isolation insulating layer is formed over the substrate so that an upper portion of the fin structure is exposed from the isolation insulating layer. A gate structure extending in a second direction crossing the first direction is formed over a part of the fin structure. A fin mask layer is formed on sidewalls of a source/drain region of the fin structure. The source/drain region of the fin structure is recessed by a plasma etching process. An epitaxial source/drain structure is formed over the recessed fin structure. In the recessing the source/drain region of the fin structure, the plasma process comprises applying pulsed bias voltage and RF voltage with pulsed power.

Abstract: A motor commutation waveform generating circuit is provided. The motor commutation waveform generating circuit includes: an edge detection circuit, configured to receive sensing signals of the motor and derive a clock signal indicating a commutation switching point of the motor; an angle cutting circuit, controlled by the clock signal to generate an angle indication pulse indicating a rotation angle of the motor; a synthetic wave generating circuit, using the angle indication pulse to sequentially change waveform voltages corresponding to required angles and output them in segments; and a signal combining circuit, controlled by the clock signal to combine waveform voltage signals generated by the synthetic wave generating circuit, thereby obtaining a plurality of synthetic waveforms provided to a drive control system of the motor for drive control after pulse width modulation.

Abstract: A motor and a rotating shaft cooling device thereof are disclosed. A rotating shaft of the motor is formed with an annular space. A shaft has a front end and a rear end. The shaft is a blind tube formed with a channel communicating with the annular space through a plurality of nozzles. The distance between the nozzles and the rear end is less than one-half of the length of the shaft. A cooling fluid flows through the nozzles to form a jet array to impinge on the inner wall of the rotating shaft to cool the rotating shaft, and flows back in the annular space to enhance the cooling effect, increase the heat exchange area, and improve the cooling effectiveness of the rotating shaft.

Abstract: A motor and a spoke-type rotor structure thereof are disclosed. The rotor structure comprises a rotor core which has a plurality of spoke-type first magnetic members. Two oblique second magnetic members arranged in a V shape are provided between every adjacent two of the first magnetic members. A radius of the rotor core is R. A length of the first magnetic member is ls. A length of the second magnetic member is lv. A length component of the second magnetic member on the radius of the rotor core is x. An included angle between the first magnetic member and the second magnetic member is ?. An included angle between every adjacent two of the first magnetic members is ?. The parameters satisfy: ls+x<R, wherein x=lv·cos(180°??); 90°+?/2<?<180°.

Abstract: An electronic rotary encoder is configured to be disposed on a vertical rotary shaft in a rotary object to obtain two encoded signals: a phase A signal and a phase B signal for calculating a rotational speed and a position. The electronic rotary encoder includes: at least one Hall element outputting Hall signals used as a square wave of the phase A signal; two capacitors, to respectively obtain a first voltage and a second voltage; two buffer gates, to respectively output waveform signals of a first X voltage and a second X voltage; two comparators outputting, a control signal through a latch; and an exclusive OR gate, where a direction signal and the control signal outputted through the latch are inputted to the exclusive OR gate, to obtain the phase B signal.

Abstract: A method includes determining a target etching depth for etching a plurality of dielectric regions in a wafer. The wafer includes a plurality of protruding semiconductor fins and the plurality of dielectric regions between the plurality of protruding semiconductor fins. The method further includes etching the plurality of dielectric regions, projecting a light beam on the wafer, and generating a spectrum from a reflected light reflected from the wafer, determining an end point for etching based on the spectrum. The end point is an expected time point. The plurality of dielectric regions are etched to the target etching depth. The etching of the plurality of dielectric regions is stopped at the end point.

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming a gate layer over the fin; and patterning the gate layer in a plasma etching tool using a plasma etching process to form a gate over the fin, where patterning the gate layer includes: turning on and off a top radio frequency (RF) source of the plasma etching tool alternately during the plasma etching process; and turning on and off a bottom RF source of the plasma etching tool alternately during the plasma etching process, where there is a timing offset between first time instants when the top RF source is turned on and respective second time instants when the bottom RF source is turned on.

Abstract: In a method of manufacturing a semiconductor device including a Fin FET, a fin structure extending in a first direction is formed over a substrate. An isolation insulating layer is formed over the substrate so that an upper portion of the fin structure is exposed from the isolation insulating layer. A gate structure extending in a second direction crossing the first direction is formed over a part of the fin structure. A fin mask layer is formed on sidewalls of a source/drain region of the fin structure. The source/drain region of the fin structure is recessed by a plasma etching process. An epitaxial source/drain structure is formed over the recessed fin structure. In the recessing the source/drain region of the fin structure, the plasma etching process comprises applying pulsed bias voltage and RF voltage with pulsed power.

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming a gate layer over the fin; and patterning the gate layer in a plasma etching tool using a plasma etching process to form a gate over the fin, where patterning the gate layer includes: turning on and off a top radio frequency (RF) source of the plasma etching tool alternately during the plasma etching process; and turning on and off a bottom RF source of the plasma etching tool alternately during the plasma etching process, where there is a timing offset between first time instants when the top RF source is turned on and respective second time instants when the bottom RF source is turned on.