Patents by Inventor An-Hsiu Lee

An-Hsiu Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory and memory managing method
    Patent number: 9558818
    Abstract: A method for managing memory includes setting a state of a first memory cell to a first state representing a first data and setting a state of a second memory cell to a second state representing the first data. If the state of the second memory cell has changed to a third state representing a second data different from the first data, the method also includes changing the state of the second memory cell back to the second state.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: January 31, 2017
    Assignee: Macronix International Co., Ltd.
    Inventors: Hsin Yi Ho, Ming-Hsiu Lee, Chun Hsiung Hung, Hsiang-Lan Lung, Tien-Yen Wang
  • Method of optical proximity correction for modifying line patterns and integrated circuits with line patterns modified by the same
    Patent number: 9530731
    Abstract: A method of optical proximity correction executed by a computer system for modifying line patterns includes the following steps. First, providing an integrated circuit layout with parallel line patterns and interconnect patterns disposed corresponding to the parallel line patterns. Then, using the computer to modify the integrated circuit layout based on a position of the interconnect patterns so as to generate a convex portion and a concave portion respectively on two sides of each of the parallel line patterns. Portions of the line pattern in front of and behind the convex portion and the concave portion are straight lines and have an identical critical dimension.
    Type: Grant
    Filed: January 27, 2015
    Date of Patent: December 27, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuan-Wen Fang, Chin-Lung Lin, Kuo-Chang Tien, Yi-Hsiu Lee, Chien-Hsiung Wang
  • METHOD OF FORMING TRENCHES
    Publication number: 20160358813
    Abstract: A method of forming trenches is provided. A first layer, a second layer and a third layer are formed on the substrate. A patterned third layer with a plurality of third trenches is formed. A spacer is formed on sidewalls of the third trenches, following by removing a portion of the patterned third layer between the third trenches. By using the spacer and the patterned third layer as a mask, a patterned second layer with a plurality of second trenches is formed. Next, the patterned third layer and the spacer are completely removed, and a block layer is formed on the patterned second layer, filling into the at least one second trench to separate said second trench into at least two parts. The first layer is patterned by using the patterned second layer and the block layer as a mask to form a patterned first layer with first trenches.
    Type: Application
    Filed: June 8, 2015
    Publication date: December 8, 2016
    Inventors: Harn-Jiunn Wang, Chin-Lung Lin, Yi-Hsiu Lee
  • Timing device and method thereof
    Patent number: 9501042
    Abstract: A timing device is provided. The timing device includes a memory device and a processor. The memory device has a first electrical parameter. The processor is configured to sense an initial value of a first electrical parameter of the memory device. The processor is configured to sense a first value of the first electrical parameter of the memory device after a first time period. And the processor is further configured to calculate the first time period according to the initial value of the first electrical parameter and the first value of the first electrical parameter.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: November 22, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Ming-Hsiu Lee
  • Method of forming trenches
    Patent number: 9502285
    Abstract: A method of forming trenches is provided. A first layer, a second layer and a third layer are formed on the substrate. A patterned third layer with a plurality of third trenches is formed. A spacer is formed on sidewalls of the third trenches, following by removing a portion of the patterned third layer between the third trenches. By using the spacer and the patterned third layer as a mask, a patterned second layer with a plurality of second trenches is formed. Next, the patterned third layer and the spacer are completely removed, and a block layer is formed on the patterned second layer, filling into the at least one second trench to separate said second trench into at least two parts. The first layer is patterned by using the patterned second layer and the block layer as a mask to form a patterned first layer with first trenches.
    Type: Grant
    Filed: June 8, 2015
    Date of Patent: November 22, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Harn-Jiunn Wang, Chin-Lung Lin, Yi-Hsiu Lee
  • Array structure having local decoders in an electronic device
    Patent number: 9496015
    Abstract: An array structure includes: a plurality of first signal lines and a plurality of sub-arrays. Each of the sub-array includes: a second signal line, a plurality of third signal lines, a plurality of fourth signal lines, a plurality of local decoders at each intersection of the first signal lines, the second signal line and the third signal lines; and a plurality of array cells at each intersection of the first signal lines, the third signal lines and the fourth signal lines. Respective control terminals of the local decoders are implemented by the first signal lines. In response to a selection status of the first signal lines and the second signal line, one of the local decoders selects one of the third signal lines.
    Type: Grant
    Filed: August 11, 2015
    Date of Patent: November 15, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Ming-Hsiu Lee, Chun-Hsiung Hung, Tien-Yen Wang
  • Resistive memory device with ring-shaped metal oxide on top surfaces of ring-shaped metal layer and barrier layer
    Patent number: 9455402
    Abstract: A resistive memory device is provided, comprising a bottom electrode, a patterned dielectric layer with a via formed on the bottom electrode, a barrier layer formed at sidewalls and a bottom surface of the via as a liner, a ring-shaped metal layer formed at sidewalls and a bottom surface of the barrier layer, and a ring-shaped metal oxide formed on a top surface of the ring-shaped metal layer.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: September 27, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Yu-Yu Lin, Feng-Min Lee, Kuang-Hao Chiang, Ming-Hsiu Lee
  • Unipolar programmable metallization cell
    Patent number: 9437266
    Abstract: A programmable metallization device comprises a first electrode and a second electrode, and a dielectric layer, a conductive ion-barrier layer, and an ion-supplying layer in series between the first and second electrodes. In operation, a conductive bridge is formed or destructed in the dielectric layer to represent a data value using bias voltages having the same polarity, enabling the use of diode access devices. To form a conductive bridge, a bias is applied that is high enough to cause ions to penetrate the conductive ion-barrier layer into the dielectric layer, which then form filaments or bridges. To destruct the conductive bridge, a bias of the same polarity is applied that causes current to flow through the structure, while ion flow is blocked by the conductive ion-barrier layer. As a result of Joule heating, any bridge in the dielectric layer disintegrates.
    Type: Grant
    Filed: November 13, 2012
    Date of Patent: September 6, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Feng-Ming Lee, Yu-Yu Lin, Ming-Hsiu Lee
  • RESISTIVE MEMORY DEVICE WITH RING-SHAPED METAL OXIDE ON TOP SURFACES OF RING-SHAPED METAL LAYER AND BARRIER LAYER
    Publication number: 20160225983
    Abstract: A resistive memory device is provided, comprising a bottom electrode, a patterned dielectric layer with a via formed on the bottom electrode, a barrier layer formed at sidewalls and a bottom surface of the via as a liner, a ring-shaped metal layer formed at sidewalls and a bottom surface of the barrier layer, and a ring-shaped metal oxide formed on a top surface of the ring-shaped metal layer.
    Type: Application
    Filed: January 23, 2015
    Publication date: August 4, 2016
    Inventors: Yu-Yu Lin, Feng-Min Lee, Kuang-Hao Chiang, Ming-Hsiu Lee
  • WRITING METHOD AND READING METHOD OF PHASE CHANGE MEMORY
    Publication number: 20160225445
    Abstract: A writing method and a reading method of a phase change memory (PCM) are provided. The PCM has a plurality of memory cells. The writing method comprises the following steps. At least one stress pulse is applied for aging at least one of the memory cells. A starting pulse is applied to all of the memory cells of the PCM for increasing a resistance of each of the memory cells. A detection pulse is applied to all of the memory cells of the PCM for decreasing the resistance of each of the memory cells and detecting the resistance changing speed of each of the memory cells. A set pulse is applied to the aged memory cells. A reset pulse is applied to the non-aged memory cells.
    Type: Application
    Filed: January 30, 2015
    Publication date: August 4, 2016
    Inventors: Chao-I Wu, Ming-Hsiu Lee
  • Phase change memory, writing method thereof and reading method thereof
    Patent number: 9396793
    Abstract: A phase change memory (PCM), a writing method thereof and a reading method thereof are provided. The PCM has a plurality of memory cells. The writing method comprises the following steps. At least one stress pulse is applied for aging at least one of the memory cells. A starting pulse is applied to all of the memory cells of the PCM for decreasing a resistance of each memory cell. A detection pulse is applied to all of the memory cells of the PCM for detecting the resistance of each memory cell. A set pulse is applied to the aged memory cells. A reset pulse is applied to the non-aged memory cells.
    Type: Grant
    Filed: May 13, 2014
    Date of Patent: July 19, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chao-I Wu, Ming-Hsiu Lee
  • Devices and systems for remote control
    Patent number: 9396728
    Abstract: Remote controllers and systems thereof are disclosed. The remote controller remotely operates a receiving host, in which the receiving host provides voice input and speech recognition functions. The remote controller comprises a first input unit and a second input unit for generating a voice input request and a speech recognition request. The generated voice input and speech recognition requests are then sent to the receiving host, thereby forcing the receiving host to perform the voice input and speech recognition functions.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: July 19, 2016
    Assignee: ASUSTEK COMPUTER INC.
    Inventors: Chia-Chen Liu, Yun-Jung Wu, Liang-Yi Huang, Yi-Hsiu Lee
  • Method for healing phase-change memory device and applications thereof
    Patent number: 9373382
    Abstract: A method for healing phase-change memory device includes steps as follows: At least one memory cell comprising a phase-change material with a shifted current-resistance characteristic function (shifted I-R function) is firstly provided. A healing stress is then applied to the phase-change material to transform the shifted I-R function into an initial current-resistance characteristic function (initial I-R function), wherein the shifted I-R function is a translation function of the initial I-R function.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: June 21, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chao-I Wu, Win-San Khwa, Ming-Hsiu Lee
  • Three-dimensional printing apparatus
    Patent number: 9346217
    Abstract: A three-dimensional printing apparatus including a swing tank containing a liquid formation material, a swing mechanism, an elevating platform, a light source and a control unit is provided. The swing tank includes a pivot side and a swing side adapted to be swung about the pivot side. The swing mechanism includes a cam and a driving motor. The cam leans against the swing side for swinging the same. The elevating platform and the light source are respectively disposed above and below the swing tank. The control unit controls the elevating platform to immerge into the liquid formation material. The light source cures the liquid formation material between the elevating platform and the bottom of the swing tank. The control unit then controls the swing mechanism to swing the swing side, so the cured liquid formation material is separated from the bottom and located on the elevating platform.
    Type: Grant
    Filed: September 16, 2014
    Date of Patent: May 24, 2016
    Assignees: XYZprinting, Inc., Kinpo Electronics, Inc., Cal-Comp Electronics & Communications Company Limited
    Inventors: Chen-Fu Huang, An-Hsiu Lee, Hao-Jen Huang
  • Phase change memory coding
    Patent number: 9336867
    Abstract: An integrated circuit phase change memory can be pre-coded by inducing a first resistance state in some cells and the memory, and a second resistance state and some other cells in the memory to represent a data set. The integrated circuit phase change memory is mounted on a substrate after coding the data set. After mounting the integrated circuit phase change memory, the data set is read by sensing the first and second resistance states, and changing cells in the first resistance state to a third resistance state and changing cells in the second resistance state to a fourth resistance state. The first and second resistance states maintain a sensing margin after solder bonding or other thermal cycling process. The third and fourth resistance states are characterized by the ability to cause a transition using higher speed and lower power, suitable for a mission function of a circuit.
    Type: Grant
    Filed: January 6, 2014
    Date of Patent: May 10, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Hsiang-Lan Lung, Ming-Hsiu Lee, Yen-Hao Shih, Tien-Yen Wang, Chao-I Wu
  • THREE-DIMENSIONAL PRINTING APPARATUS
    Publication number: 20160089839
    Abstract: A 3-D printing apparatus includes a frame, a tank, an automatic-filling module and a control unit. The tank is disposed in the frame and contains a liquid-forming material. The automatic-filling module includes a sensing unit, a reservoir, a filling pipe and a pressuring unit. The sensing unit detects a liquid level of the tank. The reservoir stores the liquid-forming material. The filling pipe connects to the reservoir and includes an outlet. A maximum liquid level of the liquid-forming material in the reservoir is lower than or equal to a level of the outlet. A gap exists between the outlet and a top edge of the tank. The pressuring unit provides a positive pressure to the reservoir so that the liquid-forming material in the reservoir flows to the tank. The control unit determines whether the pressuring unit provides the positive pressure to the reservoir according to the liquid level.
    Type: Application
    Filed: December 8, 2014
    Publication date: March 31, 2016
    Inventors: Chen-Fu Huang, An-Hsiu Lee, Hao-Jen Huang
  • Self-rectified device, method for manufacturing the same, and applications of the same
    Patent number: 9276090
    Abstract: A self-rectified device is provided, comprising a bottom electrode, a patterned dielectric layer with a contact hole formed on the bottom electrode, a memory formed at the bottom electrode and substantially aligned with the contact hole, and a top electrode formed on the bottom electrode and filling into the contact hole to contact with the memory, wherein the top electrode comprises a N+ type semiconductor material or a P+ type semiconductor material, and the memory and the top electrode produce a self-rectified property.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: March 1, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Wei-Chih Chien, Dai-Ying Lee, Erh-Kun Lai, Ming-Hsiu Lee
  • THREE-DIMENSIONAL PRINTING APPARATUS
    Publication number: 20150375452
    Abstract: A three-dimensional printing apparatus including a swing tank containing a liquid formation material, a swing mechanism, an elevating platform, a light source and a control unit is provided. The swing tank includes a pivot side and a swing side adapted to be swung about the pivot side. The swing mechanism includes a cam and a driving motor. The cam leans against the swing side for swinging the same. The elevating platform and the light source are respectively disposed above and below the swing tank. The control unit controls the elevating platform to immerge into the liquid formation material. The light source cures the liquid formation material between the elevating platform and the bottom of the swing tank. The control unit then controls the swing mechanism to swing the swing side, so the cured liquid formation material is separated from the bottom and located on the elevating platform.
    Type: Application
    Filed: September 16, 2014
    Publication date: December 31, 2015
    Inventors: Chen-Fu Huang, An-Hsiu Lee, Hao-Jen Huang
  • Resistive memory and associated operation method
    Patent number: 9224468
    Abstract: A resistive memory includes a resistive memory cell, a main transistor and an auxiliary transistor. The drain of the main transistor and the drain of the auxiliary transistor are coupled to one end of the resistive memory cell. When the resistive memory cell is programmed, the main transistor is turned on and the auxiliary transistor is turned off. When the resistive memory cell is erased, the main transistor and the auxiliary transistor are turned on.
    Type: Grant
    Filed: May 8, 2014
    Date of Patent: December 29, 2015
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Ming-Hsiu Lee
  • SEMICONDUCTOR STRUCTURE, RESISTIVE RANDOM ACCESS MEMORY UNIT STRUCTURE, AND MANUFACTURING METHOD OF THE SEMICONDUCTOR STRUCTURE
    Publication number: 20150357562
    Abstract: A semiconductor structure, a resistive random access memory unit structure, and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes an insulating structure, a stop layer, a metal oxide layer, a resistance structure, and an electrode material layer. The insulating structure has a via, and the stop layer is formed in the via. The metal oxide layer is formed on the stop layer. The resistance structure is formed at a bottom of an outer wall of the metal oxide layer. The electrode material layer is formed on the metal oxide layer.
    Type: Application
    Filed: June 6, 2014
    Publication date: December 10, 2015
    Inventors: Yu-Yu Lin, Feng-Min Lee, Ming-Hsiu Lee