Patents by Inventor An-Hsiu Lee

An-Hsiu Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8699258
    Abstract: Memory devices and methods for operating such devices are described which can effectively program the metal-oxide memory elements in an array, while also avoiding applying unnecessarily high voltage pulses. Programming operations described herein include applying a lower voltage pulse across a metal-oxide memory element to establish a desired resistance state, and only applying a higher voltage pulse when the lower voltage pulse is insufficient to program the memory element. In doing so, issues associated with applying unnecessarily high voltages across the memory element can be avoided.
    Type: Grant
    Filed: August 18, 2011
    Date of Patent: April 15, 2014
    Assignee: Macronix International Co., Ltd.
    Inventors: Wei-Chih Chien, Ming-Hsiu Lee, Yan-Ru Chen
  • Patent number: 8674459
    Abstract: The invention describes a semiconductor cell including a gate, a dielectric layer, a channel layer, a source region, a drain region and an oxide region. The dielectric layer is adjacent to the gate. The channel layer is adjacent to the dielectric layer and is formed above a source region, a drain region, and an oxide region.
    Type: Grant
    Filed: February 7, 2011
    Date of Patent: March 18, 2014
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Ming-Hsiu Lee, Yen-Hao Shih
  • Patent number: 8662496
    Abstract: A multifunction printer (MFP) and a stopper applied therein are provided. The MFP includes a body, a top cover and the stopper. The body has a paper conveyor path, a paper holder located in front of an entrance of the paper conveyor path and a first rotating axle located in the paper conveyor path. A first side of the top cover rotates about the first rotating axle to be close to the paper holder. The stopper has a second rotating axle connected to the body, a connecting portion and an eccentric portion. The connecting portion is connected between the second rotating axle and the eccentric portion. The eccentric portion hangs down at the entrance of the paper conveyor path. A center of gravity of the stopper is located in the eccentric portion. A first stopping point of the top cover is located in a rotating path of the eccentric portion.
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: March 4, 2014
    Assignees: Cal-Comp Electronics & Communications Company Limited, Kinpo Electronics, Inc.
    Inventors: Kai-Chuan Hsu, An-Hsiu Lee
  • Publication number: 20140036570
    Abstract: An operating method for a memory device and a memory array and an operating method for the same are provided. The operating method for the memory device comprises following steps. A memory device is made being in a set state. A method for making the memory device being in the set state comprises applying a first bias voltage to the memory device. The memory device in the set state is read. A method for reading the memory device in the set state comprises applying a second bias voltage to the memory device. A recovering bias voltage is applied to the memory device. The step for applying the recovering bias voltage is performed after the step for applying the first bias voltage or the step for applying the second bias voltage.
    Type: Application
    Filed: August 6, 2012
    Publication date: February 6, 2014
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Feng-Min Lee, Yu-Yu Lin, Ming-Hsiu Lee
  • Publication number: 20140027706
    Abstract: A switching device and an operating method for the same and a memory array are provided. The switching device comprises a first solid electrolyte, a second solid electrolyte and a switching layer. The switching layer is adjoined between the first solid electrolyte and the second solid electrolyte.
    Type: Application
    Filed: July 30, 2012
    Publication date: January 30, 2014
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Wei-Chih Chien, Feng-Ming Lee, Ming-Hsiu Lee
  • Patent number: 8634235
    Abstract: An integrated circuit phase change memory can be pre-coded by inducing a first resistance state in some cells and the memory, and a second resistance state and some other cells in the memory to represent a data set. The integrated circuit phase change memory is mounted on a substrate after coding the data set. After mounting the integrated circuit phase change memory, the data set is read by sensing the first and second resistance states, and changing cells in the first resistance state to a third resistance state and changing cells in the second resistance state to a fourth resistance state. The first and second resistance states maintain a sensing margin after solder bonding or other thermal cycling process. The third and fourth resistance states are characterized by the ability to cause a transition using higher speed and lower power, suitable for a mission function of a circuit.
    Type: Grant
    Filed: June 25, 2010
    Date of Patent: January 21, 2014
    Assignee: Macronix International Co., Ltd.
    Inventors: Hsiang-Lan Lung, Ming Hsiu Lee, Yen-Hao Shih, Tien-Yen Wang, Chao-I Wu
  • Publication number: 20130341583
    Abstract: A resistive memory and a fabricating method thereof are provided. The resistive memory includes first and second electrodes, a variable resistance material layer, a first dielectric layer, and a second dielectric layer. The first electrode includes a first portion and a second portion. The second electrode is disposed opposite to the first electrode. The variable resistance material layer includes a sidewall and first and second surfaces opposite to each other, wherein the first surface is connected with the first portion of the first electrode and the second surface is electrically connected with the second electrode. The second portion surrounds the sidewall of the variable resistance material layer and is connected with the first portion. The first dielectric layer is disposed between the first and the second electrodes. The second dielectric layer is disposed between the variable resistance material layer and the second portion of the first electrode.
    Type: Application
    Filed: March 22, 2013
    Publication date: December 26, 2013
    Applicant: MACRONIX International Co., Ltd.
    Inventors: Ming-Hsiu Lee, Wei-Chih Chien
  • Publication number: 20130341753
    Abstract: A disclosed memory device includes a three-dimension array structure that includes memory layers and transistor structures disposed between the memory layers. Each memory layer is connected to a common electrode, and each transistor structure includes transistors that share common column structures and common base structures. The transistors also each include a connector structure that is spaced apart from a common column structure by a common base structure.
    Type: Application
    Filed: June 20, 2012
    Publication date: December 26, 2013
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Ming-Hsiu LEE, Wei-Chih CHIEN
  • Publication number: 20130343115
    Abstract: A resistance memory cell is provided and includes a first electrode, a tungsten metal layer, a metal oxide layer, and a second electrode. The tungsten metal layer is disposed on the first electrode. The metal oxide layer is disposed on the tungsten metal layer. The second electrode includes a first connection pad, a second connection pad, and a bridge portion electrically connected between the first connection pad and the second connection pad. The bridge portion is disposed on the metal oxide layer or surrounds the metal oxide layer. The resistance memory cell adjusts a resistivity of the metal oxide layer through a first current path, passing through the metal oxide layer and the tungsten metal layer, or a second current path extending from the first connection pad to the second connection pad.
    Type: Application
    Filed: August 31, 2012
    Publication date: December 26, 2013
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: WEI-CHIH CHIEN, MING-HSIU LEE
  • Publication number: 20130327171
    Abstract: A transmission particularly for bicycles, which is capable of multi-speed gear-shifting by means of reverse rotation and comprises: a transmission axle rotatable in both positive and reverse directions, a speed-changing gear set, a speed-changing cam set, and a transmission seat. The speed-changing gear set comprises a plurality of transmission gears and speed-changing gears which are respectively engaging with the transmission gears. When the transmission axle rotates reversely, the speed-changing cam set can be driven in order to control and decide which transmission gear of the speed-changing gear set is to be engaged and driven by the transmission axle during positive rotation, so as to achieve the feature of multi-speed gear-shifting by means of reverse rotation.
    Type: Application
    Filed: June 6, 2012
    Publication date: December 12, 2013
    Applicant: SUN RACE STURMEY-ARCHER, INC.
    Inventors: Hsin Yang Shu, Chen Hsiu Lee
  • Publication number: 20130242648
    Abstract: A memory chip and methods of fabricating a memory device with different programming performance and retention characteristics on a single wafer. One method includes depositing a first bounded area of phase change material on the wafer and depositing a second bounded area of phase change material on the wafer. The method includes modifying the chemical composition of a switching volume of the first bounded area of phase change material. The method includes forming a first memory cell in the first bounded area of phase change material with a modified switching volume of phase change material and a second memory cell in the second bounded area of phase change material with an unmodified switching volume of phase change material such that the first memory cell has a first retention property and the second memory cell has a second retention property. The first retention property is different from the second retention property.
    Type: Application
    Filed: March 15, 2012
    Publication date: September 19, 2013
    Applicant: International Business Machines Corporation
    Inventors: Matthew J. BrightSky, Roger W. Cheek, Ming-Hsiu Lee
  • Patent number: 8537609
    Abstract: A memory device is provided. The memory device includes a memory array; a first circuit electrically connected to the memory array, and causing the memory array to be operated in a first mode; and a second circuit electrically connected to the memory array, and causing the memory array to be operated in a second mode.
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: September 17, 2013
    Assignee: Macronix International Co., Ltd.
    Inventors: Ming-Hsiu Lee, Chieh-Fang Chen
  • Publication number: 20130210982
    Abstract: The present disclosure relates to a silicone resin composition comprising a silicone resin having at least one terminal hydrogen group, a metal alkoxide having at least one C1-6 ailcoxy group, and a silane having at least one terminal vinyl group and at least one terminal C1-6 alkoxy or hydroxyl group. The composition cured has a refractive index greater than 1.4. The present disclosure also relates to an optoelectronic device, which is encapsulated with the aforementioned composition.
    Type: Application
    Filed: October 14, 2011
    Publication date: August 15, 2013
    Applicant: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Pei Tien, Hsu-Hsiu Lee, Pei Chun Chang
  • Publication number: 20130153846
    Abstract: A self-aligning stacked memory cell array structure and method for fabricating such structure. The memory cell array includes a stack of memory cells disposed adjacent to opposing sides of a conductive line that is formed within a trench. The memory cells are stacked such that the memory element surface of each memory cell forms a portion of the sidewall of the conductive line. The conductive line is formed within the trench such that electrical contact is made across the entire memory element surface of each memory cell. Such structure and method for making such structure is a self-aligning process that does not require the use of any additional masks.
    Type: Application
    Filed: December 19, 2011
    Publication date: June 20, 2013
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Wei-Chih CHIEN, Ming-Hsiu Lee, Shih-Hung Chen
  • Publication number: 20130154182
    Abstract: A multifunction printer (MFP) and a stopper applied therein are provided. The MFP includes a body, a top cover and the stopper. The body has a paper conveyor path, a paper holder located in front of an entrance of the paper conveyor path and a first rotating axle located in the paper conveyor path. A first side of the top cover rotates about the first rotating axle to be close to the paper holder. The stopper has a second rotating axle connected to the body, a connecting portion and an eccentric portion. The connecting portion is connected between the second rotating axle and the eccentric portion. The eccentric portion hangs down at the entrance of the paper conveyor path. A center of gravity of the stopper is located in the eccentric portion. A first stopping point of the top cover is located in a rotating path of the eccentric portion.
    Type: Application
    Filed: March 14, 2012
    Publication date: June 20, 2013
    Applicants: Kinpo Electronics, Inc., Cal-Comp Electronics & Communications Company Limited
    Inventors: Kai-Chuan Hsu, An-Hsiu Lee
  • Publication number: 20130134652
    Abstract: A multi-function peripheral (MFP) suited for printing/scanning a paper or a business card is provided. The MFP includes a body and a printing/scanning unit, a feeding roller, and a plurality of idle rollers disposed in the body. The body has a feeding path that the printing/scanning unit, the feeding roller, and the idle rollers are located thereon. The printing/scanning unit used for printing/scanning the paper or the business card on the feeding path. The idle rollers lean against the feeding roller respectively. A path length between two leaning points of any two adjacent idle rollers contacting the feeding roller is shorter than a size of the business card.
    Type: Application
    Filed: July 24, 2012
    Publication date: May 30, 2013
    Applicants: Kinpo Electronics, Inc., Cal-Comp Electronics & Communications Company Limited
    Inventors: Chen-Fu Huang, Kai-Yuan Cheng, Chao-Hsuan Lee, Pei-Chi Ho, Michael Medrano Recinto, An-Hsiu Lee, Kai-Chuan Hsu, Chung-Liang Huang
  • Patent number: 8437192
    Abstract: A 3D memory device includes bottom and top memory cubes having respective arrays of vertical NAND string structures. A common source plane comprising a layer of conductive material is between the top and bottom memory cubes. The source plane is supplied a bias voltage such as ground, and is selectively coupled to an end of the vertical NAND string structures of the bottom and top memory cubes. Memory cells in a particular memory cube are read using current through the particular vertical NAND string between the source plane and a corresponding bit line coupled to another end of the particular vertical NAND string.
    Type: Grant
    Filed: May 21, 2010
    Date of Patent: May 7, 2013
    Assignee: Macronix International Co., Ltd.
    Inventors: Hsiang-Lan Lung, Hang-Ting Lue, Yen-Hao Shih, Erh-Kun Lai, Ming-Hsiu Lee, Tien-Yen Wang
  • Patent number: 8426294
    Abstract: A 3D memory device includes an array of semiconductor body pillars and bit line pillars, dielectric charge trapping structures, and a plurality of levels of word line structures arranged orthogonally to the array of semiconductor body pillars and bit line pillars. The semiconductor body pillars have corresponding bit line pillars on opposing first and second sides, providing source and drain terminals. The semiconductor body pillars have first and second channel surfaces on opposing third and fourth sides. Dielectric charge trapping structures overlie the first and second channel surfaces, providing data storage sites on two sides of each semiconductor body pillar in each level of the 3D array. The device can be operated as a 3D AND-decoded flash memory.
    Type: Grant
    Filed: May 21, 2012
    Date of Patent: April 23, 2013
    Assignee: Macronix International Co., Ltd.
    Inventors: Hsiang-Lan Lung, Yen-Hao Shih, Erh-Kun Lai, Ming-Hsiu Lee, Hang-Ting Lue
  • Publication number: 20130094273
    Abstract: A 3D memory device is based on an array of conductive pillars and a plurality of patterned conductor planes including left side and right side conductors adjacent the conductive pillars at left side and right side interface regions. Memory elements in the left side and right side interface regions comprise a programmable transition metal oxide which can be characterized by built-in self-switching behavior, or other programmable resistance material. The conductive pillars can be selected using two-dimensional decoding, and the left side and right side conductors in the plurality of planes can be selected using decoding on a third dimension, combined with left and right side selection.
    Type: Application
    Filed: December 5, 2012
    Publication date: April 18, 2013
    Inventors: WEI-CHIH CHIEN, MING-HSIU LEE, HSIANG-LAN LUNG
  • Patent number: 8419027
    Abstract: A steering apparatus includes a first joint disposed on a control rod that extends rotatably through a head tube, two second joints disposed respectively on two suspension units, and two connecting bars each connected between the first joint and a respective one of the second joints. The first joint includes a seat disposed fixedly on the control rod, at least one first rotating member having a central axis and rotatable on the seat about the central axis of the first rotating member, and at least one second rotating member having a central axis and rotatable on the first rotating member about the central axis of the second rotating member. The axes of the first and second rotating members of the first joint are perpendicular to each other.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: April 16, 2013
    Assignee: Kwang Yang Motor Co., Ltd.
    Inventors: Hsin-Chih Ting, Yen-Hsiu Lee, Chun-Hao Huang