Abstract: The present disclosure relates to an integrated circuit. The integrated circuit has a plurality of bit-line stacks disposed over a substrate and respectively including a plurality of bit-lines stacked onto one another. A data storage structure is over the plurality of bit-line stacks and a selector is over the data storage structure. A word-line is over the selector. The selector is configured to selectively allow current to pass between the plurality of bit-lines and the word-line. The plurality of bit-line stacks include a first bit-line stack, a second bit-line stack, and a third bit-line stack. The first and third bit-line stacks are closest bit-line stacks to opposing sides of the second bit-line stack. The second bit-line stack is separated from the first bit-line stack by a first distance and is further separated from the third bit-line stack by a second distance larger than the first distance.

Abstract: The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.

Abstract: A data processing method implemented by a network interface card device, wherein the method comprises receiving, from a first client, a first access request carrying an access address, detecting whether the first access request has a conflict; and processing the conflict according to a processing policy when the network interface card device detects that the first access request has a conflict.

Abstract: Embodiments of the invention are directed to systems and methods for conducting a transaction utilizing a cryptocurrency. The user may fund a cryptocurrency account with his pre-existing cryptocurrency. An issuer may purchase cryptocurrency within a cryptocurrency exchange. The user may then utilize a payment device (e.g., a Crypto Debit Card) that is associated with a cryptocurrency balance to conduct a transaction with a merchant for goods and/or services. An authorization request message may be transmitted to the authorizing entity computer. The authorizing entity computer may determine a cryptocurrency amount corresponding to the fiat currency transaction amount of the authorization request message. A sell request message may be transmitted to an exchange that facilitates the sale of the cryptocurrency amount.

Abstract: The disclosure discloses a production process and application of fermented tapioca starch for baking, and belongs to the fields of starch deep processing and food processing and production. The disclosure develops a production method of the fermented tapioca starch for baking. The method includes simple steps and greatly shortens a process cycle. By using tapioca starch as a main raw material and adding a specific amount of carbon source and a specific strain, under the action of fermentation and illumination in cooperation, the structure of the starch is improved. By adding the fermented tapioca starch, the effects of increasing the size of gluten-free Mochi bread, increasing pores of the bread and improving the texture and taste of the bread are realized.

Abstract: A tool set includes a tool holder, a tool and a tool rack. The tool has a groove unit. The tool holder has a latch unit that engages the groove unit. The tool rack includes a rack body and a blocking member. When the tool holder is moved away from the rack body after the tool is moved into the rack body by the tool holder and after the blocking member moves to a blocking position, the tool is blocked by the blocking member so that the latch unit is separated from the groove unit and that the tool holder is separated from the tool.

Abstract: Provided is a probe card, comprising a guide plate and a shielding structure of single-layer or multi-layer. The guide plate comprises an upper surface, a lower surface, and at least one guide hole passing through the upper surface and the lower surface, and the guide hole is provided with an inner wall surface. At least one layer of the shielding structure is made of an electromagnetic absorption material or an electromagnetic reflection material, and the shielding structure is not connected to a ground. Each layer of the shielding structure is formed on the inner wall surface of the guide hole by means of atomic layer deposition or atomic layer etching, and a thickness of each layer is less than 1000 nm.

Abstract: Methods for forming dummy under-bump metallurgy structures and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a second passivation layer over the first passivation layer; a first under-bump metallurgy (UBM) structure over the first redistribution line, the first UBM structure extending through the first passivation layer and the second passivation layer and being electrically coupled to the first redistribution line; and a second UBM structure over the second redistribution line, the second UBM structure extending through the second passivation layer, the second UBM structure being electrically isolated from the second redistribution line by the first passivation layer.

Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Abstract: A method includes forming a first sacrificial layer over a substrate, and forming a sandwich structure over the first sacrificial layer. The sandwich structure includes a first isolation layer, a two-dimensional material over the first isolation layer, and a second isolation layer over the two-dimensional material. The method further includes forming a second sacrificial layer over the sandwich structure, forming a first source/drain region and a second source/drain region on opposing ends of, and contacting sidewalls of, the two-dimensional material, removing the first sacrificial layer and the second sacrificial layer to generate spaces, and forming a gate stack filling the spaces.

Abstract: A process for converting a portion of a dielectric fill material into a hard mask includes a nitrogen treatment or nitrogen plasma to convert a portion of the dielectric fill material into a nitrogen-like layer for serving as a hard mask to form an edge area of a device die by an etching process. After forming the edge area, another dielectric fill material is provided in the edge area. In the completed device, a gate cut area can have a gradient of nitrogen concentration at an upper portion of the gate cut dielectric of the gate cut area.

Abstract: A semiconductor die included in a semiconductor die package may include a plurality of decoupling trench capacitor regions in a device region of the semiconductor die. At least two or more of the decoupling trench capacitor regions include decoupling trench capacitor structures having different depths. The depths of the decoupling trench capacitor structures in the decoupling trench capacitor regions may be selected to provide sufficient capacitance so as to satisfy circuit decoupling parameters for circuits of the semiconductor die package, while reducing the likelihood of warping, breaking, and/or cracking of the semiconductor die package.

Abstract: An electronic device and a method for manufacturing the same are provided. The electronic device includes a substrate and a gate structure. The substrate includes a fin. The fin includes a source region and a drain region spaced apart from the source region. The gate structure is located between the source region and the drain region. The gate structure includes a work function layer. The work function layer includes a compound of a metal material and a Group VIA material.

Abstract: A semiconductor device includes a gate layer, a channel material layer, a first dielectric layer and source/drain terminals. The gate layer is disposed over a substrate. The channel material layer is disposed over the gate layer, where a material of the channel material layer includes a first low dimensional material. The first dielectric layer is between the gate layer and the channel material layer. The source/drain terminals are in contact with the channel material layer, where the channel material layer is at least partially disposed between the source/drain terminals and over the gate layer, and the gate layer is disposed between the substrate and the source/drain terminals.

Abstract: A wideband vibration suppression device utilizing properties of a sonic black hole, comprising: a vibration absorber (101) comprising a uniform portion (1011) of a fixed thickness and a conical portion (1012) integrally connected to the uniform portion (1011), the conical portion (1012) extending from the junction in such a manner that the thickness thereof gradually decreases from the thickness (d1) of the uniform portion (1011) to a predetermined thickness (d2); and a damping layer (102) attached to the conical portion (1012) of the vibration absorber (101).

Abstract: The present disclosure discloses a high-temperature fast-curing starch-based adhesive for particleboards and a preparation method thereof, belonging to the technical field of adhesive preparation. The low viscosity of the starch-based adhesive is ensured by selecting a crosslinking monomer which does not self-crosslink in a reaction process in the present disclosure, and a binary crosslinking agent matched with the crosslinking monomer is added before use to be quickly crosslinked with the crosslinking monomer at high temperature so as to ensure better thermosetting property and water resistance as well as faster curing speed of the starch-based adhesive at the same time, which meets the requirements of the particleboards for the adhesive, solves the problem of long curing time of the existing starch-based adhesives at high temperatures, further shortens the curing time of the starch-based adhesives to about 60 s, and improves the production efficiency of the particleboards.

Abstract: A radiographic inspection device and a method of inspecting an object are provided. The radiographic inspection device includes a support frame, where an inspection space applicable to inspect an object is formed within the support frame, and the inspection space has a first opening connecting to an outside; a transfer mechanism applicable to carry the object and move through the inspection space; a shielding curtain mounted at the first opening; and a driving mechanism. The driving mechanism includes: a driver mounted on the support frame; and a joint portion, where an upper end of the shielding curtain is connected to the joint portion. The driver is configured to synchronously drive two ends of the joint portion, so that the shielding curtain moves up and down with the joint portion to open or close the first opening.

Abstract: A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.

Abstract: Provided is a computer-implemented method for authenticating a user. The method includes registering a plurality of user accounts for a plurality of users based at least partially on user information and account data for each user of the plurality of users, the account data for each user including an account identifier associated with a portable payment device, generating an identity score for each user, registering a plurality of provider accounts for a plurality of third-party service providers based at least partially on third-party service provider data, receiving a request to authenticate a user of the plurality of users, receiving user credentials corresponding to a user account of the user, validating the user credentials based at least partially on the identity score of the user, and communicating an authentication response message to the third-party system in response to validating the user credentials.

Abstract: A process method for fabricating a three-dimensional source contact structure is provided, which is applicable to form a step-like three-dimensional source contact structure in a MOSFET of a power device. The proposed method sequentially adopts a lithography process and a shallow trench process to form a metal contact window. And a lateral etching process, or spacers which will be removed eventually, can be alternatively provided for increasing horizontal surface contact when depositing a source contact metal. Meanwhile, a longitudinal surface exposed by the shallow trench process is also beneficial to increase vertical contact when depositing the source contact metal. As a result, a step-like three-dimensional source contact structure can be formed by employing the present invention. It is believed that the present invention achieves in reducing cell pitch effectively and can be widely applied to various power devices having MOSFET structure thereof.