Patents by Inventor An-Li Cheng

An-Li Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240070653
    Abstract: An avatar carrier generating system for metaverse and method thereof are disclosed. Before a living body enters a metaverse, a sensing element senses the living body to generate a physiological feature, and after a real-name identity message is received, the real-name identity message and the physiological feature are converted into metadata compliant with a non-fungible token standard; the non-fungible token, which is owned by the living body, is generated on the blockchain based on the metadata. When the living body enters the metaverse, an avatar carrier for entering the metaverse is generated based on the metadata of the non-fungible token, and when the avatar carrier receives an identification request, the avatar carrier is permitted to provide at least one of the physiological feature and the real-name identity message, so as to achieve the effect of improving identifiability and authentication of the avatar carrier of the metaverse.
    Type: Application
    Filed: September 15, 2022
    Publication date: February 29, 2024
    Inventors: Tom-Hwar Cho, Li-Chen Yen, Chuan-Cheng Chiu
  • Patent number: 11917571
    Abstract: Disclosed in the present application are a locating method for an uplink time difference of arrival, and an apparatus thereof.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: February 27, 2024
    Assignee: Datang Mobile Communications Equipment Co., Ltd.
    Inventors: Ren Da, Fang-Chen Cheng, Hui Li, Haiyang Quan, Bin Ren, Xueyuan Gao, Qiubin Gao
  • Patent number: 11916074
    Abstract: Exemplary embodiments for an exemplary dual transmission gate and various exemplary integrated circuit layouts for the exemplary dual transmission gate are disclosed. These exemplary integrated circuit layouts represent double-height, also referred to as double rule, integrated circuit layouts. These double rule integrated circuit layouts include a first group of rows from among multiple rows of an electronic device design real estate and a second group of rows from among the multiple rows of the electronic device design real estate to accommodate a first metal layer of a semiconductor stack. The first group of rows can include a first pair of complementary metal-oxide-semiconductor field-effect (CMOS) transistors, such as a first p-type metal-oxide-semiconductor field-effect (PMOS) transistor and a first n-type metal-oxide-semiconductor field-effect (NMOS) transistor, and the second group of rows can include a second pair of CMOS transistors, such as a second PMOS transistor and a second NMOS transistor.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Wei Peng, Hui-Zhong Zhuang, Jiann-Tyng Tzeng, Li-Chun Tien, Pin-Dai Sue, Wei-Cheng Lin
  • Publication number: 20240062467
    Abstract: Systems and techniques are described for establishing one or more virtual sessions between users. For instance, a first device can transmit, to a second device, a call establishment request for a virtual representation call for a virtual session and can receive, from the second device, a call acceptance indicating acceptance of the call establishment request. The first device can transmit, to the second device, first mesh information for a first virtual representation of a first user of the first device and first mesh animation parameters for the first virtual representation. The first device can receive, from the second device, second mesh information for a second virtual representation of a second user of the second device and second mesh animation parameters for the second virtual representation. The first device can generate, based on the second mesh information and the second mesh animation parameters, the second virtual representation of the second user.
    Type: Application
    Filed: July 3, 2023
    Publication date: February 22, 2024
    Inventors: Michel Adib SARKIS, Chiranjib CHOUDHURI, Ke-Li CHENG, Ajit Deepak GUPTE, Ning BI, Cristina DOBRIN, Ramesh CHANDRASEKHAR, Imed BOUAZIZI, Liangping MA, Thomas STOCKHAMMER, Nikolai Konrad LEUNG
  • Publication number: 20240055371
    Abstract: Embodiments include a crack stopper structure surrounding an embedded integrated circuit die, and the formation thereof. The crack stopper structure may include multiple layers separated by a fill layer. The layers of the crack stopper may include multiple sublayers, some of the sublayers providing adhesion, hardness buffering, and material gradients for transitioning from one layer of the crack stopper structure to another layer of the crack stopper structure.
    Type: Application
    Filed: January 9, 2023
    Publication date: February 15, 2024
    Inventors: Der-Chyang Yeh, Kuo-Chiang Ting, Yu-Hsiung Wang, Chao-Wen Shih, Sung-Feng Yeh, Ta Hao Sung, Cheng-Wei Huang, Yen-Ping Wang, Chang-Wen Huang, Sheng-Ta Lin, Li-Cheng Hu, Gao-Long Wu
  • Publication number: 20240056676
    Abstract: An electronic device plays, by using a first application, audio corresponding to a first media file, and displays a video recording interface of a second application; in response to an operation on a background music setting option, the electronic device sets background music as audio corresponding to a second audio file; in response to a first operation on a virtual button, the electronic device starts video recording, and processes the second audio file to obtain audio data of the second audio file; and in response to a second operation on the virtual button, the electronic device ends video recording, and generates a video file, where the video file includes the audio data of the second audio file and image data of an image captured by a camera, but does not include audio data of the first media file.
    Type: Application
    Filed: December 23, 2021
    Publication date: February 15, 2024
    Inventors: Haochen Zhang, Yanhui Yu, Qingliang Wu, Zhetao Zhang, Xin Zheng, Fan Yang, Qiuming Peng, Li Cheng
  • Patent number: 11901885
    Abstract: A PWM-based (pulse width modulation-based) overcurrent protection circuit and an operating method for the same are provided. The PWM-based overcurrent protection circuit includes a pulse-width-modulation circuit that is connected to a charge pump and a load detection circuit of a power-switch circuit. The charge pump outputs a voltage to the power-switch circuit according to a clock-voltage signal. The load detection circuit is used to detect an overcurrent flowing through the power-switch circuit according to a load at an output end of the power-switch circuit. Thus, when the load detection circuit detects the overcurrent, the pulse-width-modulation circuit controls a duty-cycle width of the charge pump, so as to suppress the voltage outputted by the charge pump. Therefore, an output voltage from the power-switch circuit can be corrected for preventing or reducing the overcurrent.
    Type: Grant
    Filed: July 14, 2021
    Date of Patent: February 13, 2024
    Assignee: REALTEK SEMICONDUCTOR CORP.
    Inventor: Li-Cheng Chu
  • Publication number: 20240047513
    Abstract: Various embodiments of the present disclosure provide a semiconductor device structure.
    Type: Application
    Filed: August 8, 2022
    Publication date: February 8, 2024
    Inventors: Shu-Hui SU, Hsin-Li CHENG, Felix YingKit TSUI, Yu-Chi CHANG
  • Publication number: 20240047552
    Abstract: The present disclosure provides an embodiment of a method. The method includes patterning a substrate to form trenches; etching the substrate, thereby modifying the trenches with round tips; forming a stack including conductive layers and dielectric layers in the trenches, wherein the conductive layers and the dielectric layers alternate with one another within the stack; forming an insulating compressive film in the first trenches, thereby sealing voids in the trenches; and forming conductive plugs connected to the conductive layers, respectively.
    Type: Application
    Filed: May 17, 2023
    Publication date: February 8, 2024
    Inventors: Fu-Chiang Kuo, Hsin-Liang Chen, Hsin-Li Cheng, Ting-Chen Hsu
  • Publication number: 20240029354
    Abstract: Systems and techniques are provided for generating a texture for a three-dimensional (3D) facial model. For example, a process can include obtaining a first frame, the first frame including a first portion of a face. In some aspects, the process can include generating a 3D facial model based on the first frame and generating a first facial feature corresponding to the first portion of the face. In some examples, the process includes obtaining a second frame, the second frame including a second portion of the face. In some cases, the second portion of the face at least partially overlaps the first portion of the face. In some examples, the process includes combining the first facial feature with the second facial feature to generate an enhanced facial feature, wherein the combining is performed to enhance an appearance of select areas of the enhanced facial feature.
    Type: Application
    Filed: July 19, 2022
    Publication date: January 25, 2024
    Inventors: Ke-Li CHENG, Anupama S, Kuang-Man HUANG, Chieh-Ming KUO, Avani RAO, Chiranjib CHOUDHURI, Michel Adib SARKIS, Ning BI, Ajit Deepak GUPTE
  • Publication number: 20240030359
    Abstract: The present disclosure provides a semiconductor device, including a first semiconductor structure and a second semiconductor structure. Each of the first semiconductor structure and the second semiconductor structure includes a substrate; a through silicon via, penetrating the substrate; and a deep trench capacitor, disposed in the substrate, separated from the TSV by a distance. The deep trench capacitor includes a stack, including a dielectric layer between a pair of conductive layers in a trench; and an insulating layer, covering the stack and the trench. The insulating layer surround a plurality of voids in the trench.
    Type: Application
    Filed: July 21, 2022
    Publication date: January 25, 2024
    Inventors: SHU-HUI SU, HSIN-LI CHENG, YINGKIT FELIX TSUI, YU-CHI CHANG, HSUAN-NING SHIH
  • Patent number: 11879071
    Abstract: The present disclosure discloses a low-viscosity thermosetting starch adhesive for particleboards, and a preparation method therefore, belonging to the technical field of adhesive preparation. The adhesive of the present invention selects N-hydroxyethyl acrylamide or acetoxyethyl methacrylate as the crosslinking monomer, which has a low degree of crosslinking in the process of adhesive preparation to avoid the problem of increasing viscosity, but can cross-link quickly during the hot pressing process, forming a network structure, and improving the water resistance of the adhesive; and furthermore, itaconic acid is added to promote the self-crosslinking reaction of the crosslinking monomer in the hot-pressing process, thus further improving the water resistance.
    Type: Grant
    Filed: June 13, 2023
    Date of Patent: January 23, 2024
    Assignee: JIANGNAN UNIVERSITY
    Inventors: Li Cheng, Junnan Jin, Zhengbiao Gu, Zhaofeng Li, Yan Hong, Caiming Li, Xiaofeng Ban
  • Publication number: 20240021431
    Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.
    Type: Application
    Filed: July 28, 2023
    Publication date: January 18, 2024
    Inventors: Wan Hsuan Hsu, Jao Sheng Huang, Yen-Chiu Kuo, Yu-Li Cheng, Ya Tzu Chen, Neng-Jye Yang, Chun-Li Chou
  • Publication number: 20240014254
    Abstract: Various embodiments of the present application are directed towards an integrated chip (IC). The IC comprises a trench capacitor overlying a substrate. The trench capacitor comprises a plurality of capacitor electrode structures, a plurality of warping reduction structures, and a plurality of capacitor dielectric structures. The plurality of capacitor electrode structures, the plurality of warping reduction structures, and the plurality of capacitor dielectric structures are alternatingly stacked and define a trench segment that extends vertically into the substrate. The plurality of capacitor electrode structures comprise a metal component and a nitrogen component. The plurality of warping reduction structures comprise the metal component, the nitrogen component, and an oxygen component.
    Type: Application
    Filed: July 11, 2022
    Publication date: January 11, 2024
    Inventors: Ting-Chen Hsu, Hsin-Li Cheng, Jyun-Ying Lin, Yingkit Felix Tsui, Shu-Hui Su, Shi-Min Wu
  • Publication number: 20240005607
    Abstract: Techniques are provided for generating three-dimensional models of objects from one or more images or frames. For example, at least one frame of an object in a scene can be obtained. A portion of the object is positioned on a plane in the at least one frame. The plane can be detected in the at least one frame and, based on the detected plane, the object can be segmented from the plane in the at least one frame. A three-dimensional (3D) model of the object can be generated based on segmenting the object from the plane. A refined mesh can be generated for a portion of the 3D model corresponding to the portion of the object positioned on the plane.
    Type: Application
    Filed: July 17, 2023
    Publication date: January 4, 2024
    Inventors: Ke-Li CHENG, Kuang-Man HUANG, Michel Adib SARKIS, Gerhard REITMAYR, Ning BI
  • Publication number: 20230410447
    Abstract: Systems and techniques are provided for generating a three-dimensional (3D) facial model. For example, a process can include obtaining at least one input image associated with a face. In some aspects, the process can include obtaining a pose for a 3D facial model associated with the face. In some examples, the process can include generating, by a machine learning model, the 3D facial model associated with the face. In some cases, one or more parameters associated with a shape component of the 3D facial model are conditioned on the pose. In some implementations, the 3D facial model is configured to vary in shape based on the pose for the 3D facial model associated with the face.
    Type: Application
    Filed: June 21, 2022
    Publication date: December 21, 2023
    Inventors: Ke-Li CHENG, Anupama S, Kuang-Man HUANG, Chieh-Ming KUO, Avani RAO, Chiranjib CHOUDHURI, Michel Adib SARKIS, Ajit Deepak GUPTE, Ning BI
  • Patent number: 11834591
    Abstract: The present disclosure discloses a thermosetting starch adhesive for a wood-based panel and a preparation method therefor, and belongs to the technical field of preparation of adhesives. In the present disclosure, starch is used as a main raw material, and after acid hydrolysis thereof, a semi-continuous seed emulsion polymerization method is adopted to improve control of monomer polymerization stability. After grafting is completed, a cross-linking monomer with polymerizable double bonds and condensable methylol functional groups is added for copolymerization. The cross-linking monomer is also added in a semi-continuous manner. After the cross-linking reaction is completed, the reaction mixture is gelatinized and incubated, and finally a thermosetting adhesive which can be used for bonding of hot-pressed wood-based panels is obtained.
    Type: Grant
    Filed: April 16, 2020
    Date of Patent: December 5, 2023
    Assignee: JIANGNAN UNIVERSITY
    Inventors: Li Cheng, Zhengbiao Gu, Yong Gu, Zhaofeng Li, Yan Hong, Caiming Li
  • Publication number: 20230378251
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a capacitor over a substrate. The capacitor includes a plurality of conductive layers and a plurality of dielectric layers. The plurality of conductive layers and dielectric layers define a base structure and a first protrusion structure extending downward from the base structure towards a bottom surface of the substrate. The first protrusion structure comprises one or more surfaces defining a first cavity. A top of the first cavity is disposed below the base structure.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 23, 2023
    Inventors: Hsin-Li Cheng, Jyun-Ying Lin, Alexander Kalnitsky, Shih-Fen Huang, Shu-Hui Su, Ting-Chen Hsu, Tuo-Hsin Chien, Felix Ying-Kit Tsui, Shi-Min Wu, Yu-Chi Chang
  • Publication number: 20230367942
    Abstract: Implementations of the present disclosure provide coloring methods that sort and pre-color nodes of G0-linked networks in a multiple-patterning technology (MPT)-compliant layout design by coordinate. In one embodiment, a method includes identifying target networks in a circuit layout, each target network having two or more linked nodes representing circuit patterns, and each target network being presented in an imaginary X-Y coordinate plane, assigning a first feature to a first node in each target network, the first node is determined using a coordinate-based method, and assigning the first feature and a second feature to remaining nodes in each target network in an alternating manner so that any two immediately adjacent linked nodes in each target network have different features.
    Type: Application
    Filed: July 26, 2023
    Publication date: November 16, 2023
    Inventors: Chia-Ping CHIANG, Ming-Hui CHIH, Chih-Wei HSU, Ping-Chieh WU, Ya-Ting CHANG, Tsung-Yu WANG, Wen-Li CHENG, Hui En YIN, Wen-Chun HUANG, Ru-Gun LIU, Tsai-Sheng GAU
  • Publication number: 20230361166
    Abstract: A capacitor structure and method of forming the capacitor structure is provided, including a providing a doped region of a substrate having a two-dimensional trench array with a plurality of segments defined therein. Each of the plurality of segments has an array of a plurality of recesses extending along the substrate, where the plurality of segments are rotationally symmetric about a center of the two-dimensional trench array. A first conducting layer is presented over the surface and a bottom and sidewalls of the recesses and is insulated from the substrate by a first dielectric layer. A second conducting layer is presented over the first conducting layer and is insulated by a second dielectric layer. First and second contacts respectively connect to an exposed top surface of the first conducting layer and second conducting layer. A third contact connects to the substrate within a local region to the capacitor structure.
    Type: Application
    Filed: June 26, 2023
    Publication date: November 9, 2023
    Inventors: Jyun-Ying Lin, Hsin-Li Cheng, Jing-Hwang Yang, Felix Ying-Kit Tsui, Chien-Li Kuo