Abstract: An integrated circuit device includes a dielectric structure within a metal interconnect over a substrate. The dielectric structure includes a cavity. A first dielectric layer provides a roof for the cavity. A second dielectric layer provides a floor for the cavity. A material distinct from the first dielectric layer and the second dielectric layer provides a side edge for the cavity. In a central area of the cavity, the cavity has a constant height. The height may be selected to provide a low parasitic capacitance between features above and below the cavity. The roof of the cavity may be flat. A gate dielectric may be formed over the roof. The dielectric structure is particularly useful for reducing parasitic capacitances when employing back-end-of-line (BEOL) transistors.

Abstract: A method including forming a III-V compound layer on a substrate and implanting a main dopant in the III-V compound layer to form source and drain regions. The method further includes implanting a group V species into the source and drain regions. A semiconductor device including a substrate and a III-V compound layer over the substrate. The semiconductor device further includes source and drain regions in the III-V layer, wherein the source and drain regions comprises a first dopants and a second dopant, and the second dopant comprises a group V material.

Abstract: A non-human organism for upgrading intermediate oxidation products formed by catalytic degradation of alkanes or polystyrenes is provided. The non-human organism is genetically modified to convert the intermediate oxidation products to secondary metabolites, and in particular to include a positive feedback loop construction in the promotor system. A method includes steps of catalytically degrading alkanes or polystyrene in an oxidizing environment to form intermediate products with one or more catalysts and contacting the intermediate products with the non-human organism such that intermediate oxidation products are converted to secondary metabolites.

Abstract: Reaction schemes involving acids and bases; reactors comprising spatially varying chemical composition gradients (e.g., spatially varying pH gradients), and associated systems and methods, are generally described.

Abstract: According to one aspect, an electrochemical cell may include a positive electrode, a negative electrode, and an electrolyte separating the positive electrode and the negative electrode from one another. The positive electrode, the negative electrode, and the electrolyte may collectively store and discharge energy by an electrode reaction of chlorine dioxide (ClO2).

Abstract: Systems and methods of the various embodiments may provide a battery including a rolling diaphragm configured to move to accommodate an internal volume change of one or more components of the battery. Systems and methods of the various embodiments may provide a battery housing including a rolling diaphragm seal disposed between an interior volume of the battery and an electrode assembly within the battery. Various embodiments may provide an air electrode assembly including an air electrode supported on a buoyant platform such that the air electrode is above a surface of a volume of electrolyte when the buoyant platform is floating in the electrolyte.

Abstract: An electrochemical cell and battery system including cells, each cell including a catholyte, an anolyte, and a separator disposed between the catholyte and anolyte and that is permeable to the at least one ionic species (for example, a metal cation or the hydroxide ion). The catholyte solution includes a ferricyanide, permanganate, manganate, sulfur, and/or polysulfide compound, and the anolyte includes a sulfide and/or polysulfide compound. These electrochemical couples may be embodied in various physical architectures, including static (non-flowing) architectures or in flow battery (flowing) architectures.

Abstract: Support structures are used in certain additive fabrication processes to permit fabrication of a greater range of object geometries. For additive fabrication processes with materials that are subsequently sintered into a final part, an interface layer is formed between the object and support in order to inhibit bonding between adjacent surfaces of the support structure and the object during sintering.

Abstract: Chemical reaction devices involving acid and/or base, and related systems and methods, are generally described.

Abstract: Reaction schemes involving acids and bases; reactors comprising spatially varying chemical composition gradients (e.g., spatially varying pH gradients), and associated systems and methods, are generally described.

Abstract: A communication receiver includes a first signal processing circuit and a second signal processing circuit. The first signal processing circuit includes a first feedforward equalizer and a decision circuit. The first feedforward equalizer processes a received signal to generate a first equalized signal. The decision circuit performs hard decision upon the first equalized signal to generate a first symbol decision signal. The second signal processing circuit includes a second feedforward equalizer, a decision feedforward equalizer, and a first decision feedback equalizer. The second feedforward equalizer processes the first equalized signal to generate a second equalized signal. The decision feedforward equalizer processes the first symbol decision signal to generate a third equalized signal. The first decision feedback equalizer generates a second symbol decision signal according to the second equalized signal and the third equalized signal.

Abstract: An integrated over-current protection device includes a positive temperature coefficient (PTC) component, a first conductive unit, a second conductive unit, a first conductive via, and a second conductive via. The PTC component includes a first PTC body, and has opposing first and second surfaces. The first conductive unit is disposed on the first surface, and includes a first electrode and a first conductive pad electrically insulated from the first electrode. The second conductive unit is disposed on the second surface, and includes a second electrode and a second conductive pad electrically insulated from the second electrode. The first conductive via extends through the first conductive unit and the PTC component to electrically connect the first electrode to the second conductive pad. The second conductive via extends through the second conductive unit and the PTC component to electrically connect the second electrode to the first conductive pad.

Abstract: Chemical reaction devices involving acid and/or base, and related systems and methods, are generally described.

Abstract: The present disclosure is generally related to separators for use in lithium metal batteries, and associated systems and products. Certain embodiments are related to separators that form or are repaired when an electrode is held at a voltage. In some embodiments, an electrochemical cell may comprise an electrolyte that comprises a precursor for the separator.

Abstract: A method of forming a semiconductor structure includes the following operations. A semiconductor epitaxial layer is formed on a first semiconductor substrate. A first side of the semiconductor epitaxial layer is adhered to a transfer substrate by an adhesive layer covering the first side of the semiconductor epitaxial layer. The semiconductor epitaxial layer and the first semiconductor substrate are turned over by the transfer substrate. The first semiconductor substrate is removed to expose a second side of the semiconductor epitaxial layer opposite to the first side. A first semiconductor doped region is formed on the second side of the semiconductor epitaxial layer. After the first semiconductor doped region is formed, the adhesive layer and the transfer substrate are removed.

Abstract: A semiconductor package includes a first semiconductor die and a second semiconductor die disposed laterally adjacent one another. The semiconductor package includes a semiconductor bridge overlapping a first corner of the first semiconductor die and a second corner of the second semiconductor die. The semiconductor bridge electrically couples the first semiconductor to the second semiconductor die. The semiconductor package includes a third semiconductor die and a fourth semiconductor die electrically coupled to the first semiconductor die and the second semiconductor die, respectively. The semiconductor bridge is interposed between the third semiconductor die and the fourth semiconductor die.

Abstract: A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.