Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a memory device surrounded by a dielectric structure disposed over a substrate. The memory device includes a data storage structure disposed between a bottom electrode and a top electrode. A bottom electrode via couples the bottom electrode to a lower interconnect. A top electrode via couples the top electrode to an upper interconnect. A bottommost surface of the top electrode via is directly over the top electrode and has a first width that is smaller than a second width of a bottommost surface of the bottom electrode via.

Abstract: The disclosure provides an electronic device, including a circuit board, multiple semiconductor components, a first light reflecting structure, and a second light reflecting structure. The circuit board includes a substrate, and the substrate may have a first surface and at least one side surface. The multiple semiconductor components are disposed on the first surface. The first light reflecting structure is disposed on the first surface. The second light reflecting structure is disposed on the first surface and the at least one side surface.

Abstract: A system and computer-implemented method are provided for manufacturing a semiconductor electronic device. An assembler receives a jig and a boat supporting a die. The assembler includes a separator that separates the jig into a first jig portion and a second jig portion and a loader that positions the boat between the first jig portion and the second jig portion. A robot receives an assembly prepared by the assembler and manipulates a locking system that fixes an alignment of the boat relative to the first jig portion and the second jig portion to form a locked assembly. A process chamber receives the locked assembly and subjects the locked assembly to a fabrication operation.

Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Abstract: A susceptor assembly for supporting a crucible during a crystal growth process includes a susceptor base, a tubular sidewall connected to the susceptor base, and a removable sacrifice ring interposed between the susceptor base and the sidewall. Each of the susceptor base and the sidewall is formed of a carbon-containing material. The susceptor base has an annular wall and a shoulder extending radially outward from an outer surface of the annular wall. The sidewall has a first end that receives the annular wall to connect the sidewall to the susceptor base. The sacrifice ring has a first surface that faces the outer surface of the annular wall, a second surface that faces an interior surface of the sidewall, and a ledge extending outward from the second surface that engages the first end of the sidewall.

Abstract: A package structure includes a first carrier, a second carrier, and a first electronic device. The first carrier is electrically connected to a first voltage. The second carrier includes a first substrate and a first interconnect structure. The first substrate is in contact with the first carrier, the first interconnect structure is electrically connected to a second voltage, and the first interconnect structure and the first carrier are deposited on two opposite sides of the first substrate. The first electronic device is deposited on the first interconnect structure and away from the first carrier. The first electronic device is in contact with the first interconnect structure.

Abstract: The present disclosure provides an atomization device, which includes a cartridge module, a battery module, and a connection module. The cartridge module includes a heating member. The heating member has a first pin and a second pin. The battery module has a first electrode and a second electrode. The connection module is detachably connected to the cartridge module and the battery module. The connection module has a first conductive member and a second conductive member. A first end of the first conductive member is in contact with the first pin. A second end of the first conductive member is electrically connected to the first electrode. A first end of the second conductive member is in contact with the second pin. A second end of the second conductive member is in contact with the second electrode. False soldering or poor soldering is reduced, thereby reducing the failure of the atomization device.

Abstract: A semiconductor structure includes a substrate. The substrate is divided into a first element region, a second element region and a boundary region. The boundary region is disposed between the first element region and a second element region. A first mask structure covers the first element region. A second mask structure is disposed in the second element region. A logic gate structure is disposed within the second element region.

Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure further includes a gate structure surrounding the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure further includes a contact formed over the source/drain structure and extending into the source/drain structure.

Abstract: An information converting method and a system thereof are configured to convert a first information into a second information. An information obtaining step is performed to obtain the first information corresponding to a first communication protocol and transmit the first information to a converter. The first information includes a first access layer sub-information and an upper-layer protocol sub-information. A first access layer removing step is performed to drive the converter to remove the first access layer sub-information from the first information according to a converting process. A second access layer adding step is performed to drive the converter to add a second access layer sub-information corresponding to a second communication protocol to the first information and combine the second access layer sub-information with the upper-layer protocol sub-information according to the converting process, so that the first information is converted into the second information.

Abstract: A multilayer polymer thin film includes an anti-reflective coating directly overlying a reflective polarizer stack. The reflective polarizer stack includes alternating first and second polymer layers, where the first layers include an isotropic polymer thin film and the second layers include an anisotropic polymer thin film. The anti-reflective coating (ARC) includes alternating third and fourth layers, where the third layers include an isotropic polymer thin film or an anisotropic polymer thin film and the fourth layers include an isotropic polymer thin film. The multilayer polymer thin film may be formed by co-extrusion where the reflective polarizer stack and the anti-reflective coating are formed simultaneously.

Abstract: A multi-fuse memory cell is disclosed. The circuit includes: a first fuse element electrically coupled to a first transistor, a gate of the first transistor is electrically coupled to a first selection signal; a second fuse element electrically coupled to a second transistor, a gate of the second transistor is electrically coupled to a second selection signal, both the first transistor and the second transistor are grounded; and a programming transistor electrically coupled to the first fuse element and the second fuse element, wherein a gate of the programming transistor is electrically coupled to a programming signal.

Abstract: A package includes a first package component including a semiconductor die, wherein the semiconductor die includes conductive pads, wherein the semiconductor die is surrounded by an encapsulant; an adaptive interconnect structure on the semiconductor die, wherein the adaptive interconnect structure includes conductive lines, wherein each conductive line physically and electrically contacts a respective conductive pad; and first bond pads, wherein each first bond pad physically and electrically contacts a respective conductive line; and a second package component including an interconnect structure, wherein the interconnect structure includes second bond pads, wherein each second bond pad is directly bonded to a respective first bond pad, wherein each second bond pad is laterally offset from a corresponding conductive pad which is electrically coupled to that second bond pad.

Abstract: A connection structure of a semiconductor device is provided in the present invention. The connection structure includes an interlayer dielectric, a top metal structure, and a passivation layer. The interlayer dielectric is disposed on a substrate. The top metal structure is disposed on the interlayer dielectric. The top metal structure includes a bottom portion and a top portion disposed on the bottom portion. The bottom portion includes a first sidewall, and the top portion includes a second sidewall. A slope of the first sidewall is larger than a slope of the second sidewall. The passivation layer is conformally disposed on the second sidewall, the first sidewall, and a top surface of the interlayer dielectric.

Abstract: In an embodiment, a package is provided. The package includes a semiconductor device; an encapsulant laterally surrounding the semiconductor device; and a heat dissipation structure disposed over the semiconductor device and the encapsulant, wherein the heat dissipation structure includes a plurality of pillars and a porous layer extending over sidewalls of the plurality of pillars.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a memory device. The method includes forming a first memory cell and a second memory cell over a substrate. A first dielectric layer is formed over and around the first and second memory cells. The first dielectric layer comprises sidewalls defining an opening spaced laterally between the first and second memory cells. A second dielectric layer is formed over the first dielectric layer. The second dielectric layer is disposed in the opening. A planarization process is performed on the first and second dielectric layers. At least a portion of the second dielectric layer is in the opening after the planarization process.

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming a metallic oxide layer within the gate opening, forming a first dielectric layer on the metallic oxide layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The forming the first dielectric layer includes depositing an oxide material with an oxygen areal density less than an oxygen areal density of the metallic oxide layer.

Abstract: A manufacturing method of a piezoelectric vibration element includes at least the following steps. Quartz wafer is provided. A first metal material layer and a second metal material layer are fully formed on a first surface and a second surface of the quartz wafer, respectively. A first photoresist material layer and a second photoresist material layer are fully formed on the first metal material layer and the second metal material layer, respectively. Only the first photoresist material layer is performed to an exposure and development process to form a first patterned photoresist layer. A portion of the first metal material layer is removed by the first patterned photoresist layer to form a metal pattern. The first patterned photoresist layer and the second photoresist material layer are removed.

Abstract: A semiconductor structure includes a first fin structure and a second fin structure, a first dielectric layer disposed over the first fin structure, a second dielectric layer disposed over the second fin structure, a first gate electrode disposed over the first dielectric layer, and a second gate electrode disposed over the second dielectric layer. A thickness of the first dielectric layer and a thickness of the second dielectric layer are equal. The second fin structure includes an outer region and an inner region, and a Ge concentration in the outer portion is less than Ge concentration in the inner portion.