Abstract: A semiconductor device includes a lower insulating layer on a lower substrate, a lower pad structure inside the lower insulating layer, an upper insulating layer on the lower insulating layer, an upper pad structure inside the upper insulating layer, and an upper substrate on the upper insulating layer. A via plug passes through at least a portion of each of the upper substrate, the upper insulating layer, and the lower insulating layer, and in contact with the upper pad structure and the lower pad structure. The upper pad structure includes upper pad conductive layers and an upper connection layer between the upper pad conductive layers. The upper connection layer includes a conductive pattern having a shape different from a shape of at least one of the upper pad conductive layers. The via plug is in direct contact with the upper pad conductive layers and the upper connection layer.

Abstract: The present invention provides a composition for adjusting biological tissue size and a method for adjusting the size of biological tissue using the said composition. The composition for adjusting the size of biological tissue according to the present invention can adjust the size of biological tissue according to the specifications of a microscope and the needs of a researcher, and can be used as a mounting solution to easily acquire an image of the biological tissue. Therefore, the composition can be usefully used to reveal the causes of and find treatment methods for various disorders.

Abstract: An integrated circuit (IC) device includes a first substrate and a first structure on a front surface of the first substrate. The first structure includes a first interlayer insulating layer structure including a plurality of first conductive pad layers spaced apart from one another at different levels of the first interlayer insulating layer structure. The IC device includes a second substrate on the first substrate and a second structure on a front surface of the second substrate, which faces the front surface of the first substrate. The second structure includes a second interlayer insulating layer structure bonded to the first interlayer insulating layer structure. A through-silicon via (TSV) structure penetrates the second substrate and the second interlayer insulating layer structure. The TSV structure is in contact with at least two first conductive pad layers of the plurality of first conductive pad layers located at different levels.

Abstract: The present invention relates to a heart targeting agent comprising tannic acid, in which the agent aids a heart disease therapeutic drug to be delivered to the heart and bind to the cardiac myocardium by inducing tannylation of the drug so as to make heart targeting and accumulation of the drug possible. Unlike the conventional invasive method used for the traditional drugs to be able to target the heart, the agent of the present invention can help a drug to target the heart with high efficiency just via non-invasive intravenous administration.

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.

Abstract: The present disclosure provides an image sensor and a method of manufacturing the same. An image sensor includes a first substrate, a barrier structure, a first structure, a second substrate, and a second structure. The first substrate includes a device region in which unit pixels are disposed and a first residual scribe lane region surrounding the device region. The first substrate has a first surface and a second surface. The barrier structure penetrates the first substrate in the first residual scribe lane region. The first surface of the first substrate is on the first structure. The second substrate includes a second residual scribe lane region facing the first residual scribe lane region. The second substrate has a front surface and a rear surface. The second structure is on the front surface of the second substrate and faces the first surface of the first substrate. The second structure is bonded to the first structure.

Abstract: Disclosed is a display device that includes an array substrate that includes a display region and a first non-display region, and includes a signal line connected to a pixel in the display region; a first signal transfer line that is at the first non-display region and transfers a test signal, and a second signal transfer line that transfers a test enable signal; a connection pattern connected to the first signal transfer line; a test transistor that is connected between the signal line and the connection pattern, and is connected to the second signal transfer line; and an electrostatic induction element that includes a dummy device in the form of either a dummy pattern and/or a dummy test transistor, the dummy pattern including a dummy connection pattern connected to the first signal transfer line, the dummy test transistor connected to the second signal transfer line.

Abstract: The present disclosure provides an image sensor and a method of manufacturing the same. An image sensor includes a first substrate, a barrier structure, a first structure, a second substrate, and a second structure. The first substrate includes a device region in which unit pixels are disposed and a first residual scribe lane region surrounding the device region. The first substrate has a first surface and a second surface. The barrier structure penetrates the first substrate in the first residual scribe lane region. The first surface of the first substrate is on the first structure. The second substrate includes a second residual scribe lane region facing the first residual scribe lane region. The second substrate has a front surface and a rear surface. The second structure is on the front surface of the second substrate and faces the first surface of the first substrate. The second structure is bonded to the first structure.

Abstract: The present invention relates to a two-speed transmission and includes a first sun gear; a second sun gear; a plurality of first planetary gears which are engaged with the first sun gear to rotate or revolve along a circumferential direction of the first sun gear; a ring gear which includes an inner circumferential gear and an outer circumferential gear, the outer gear rotating by being engaged with an input gear which rotates by a driving device; a plurality of second planetary gears which are engaged with the inner circumferential gear and the second sun gear to rotate or revolve along a circumferential direction of the second sun gear; a carrier to which the first planetary gears and the second planetary gears are rotatably connected; and a brake part which selectively fixes the first sun gear and the second sun gear.

Abstract: A semiconductor device includes a lower insulating layer on a lower substrate, a lower pad structure inside the lower insulating layer, an upper insulating layer on the lower insulating layer, an upper pad structure inside the upper insulating layer, and an upper substrate on the upper insulating layer. A via plug passes through at least a portion of each of the upper substrate, the upper insulating layer, and the lower insulating layer, and in contact with the upper pad structure and the lower pad structure. The upper pad structure includes upper pad conductive layers and an upper connection layer between the upper pad conductive layers. The upper connection layer includes a conductive pattern having a shape different from a shape of at least one of the upper pad conductive layers. The via plug is in direct contact with the upper pad conductive layers and the upper connection layer.

Abstract: A differential for an automobile according to an exemplary embodiment of the present invention includes: a housing in which a pinion gear and a plurality of side gears are disposed and is provided with a flange portion in which a coupling hole is formed at an outer side thereof; and a bush which has an insertion portion which is inserted into the coupling hole and is provided with a thread at an inner surface thereof so as to be coupled with a coupling member. Since the coupling member is not directly coupled to the housing but is coupled to the bush which is connected to the housing, the direct contact friction between the housing and the coupling member which are made of different materials can be avoided and thus the damage of the coupling section can be prevented.

Abstract: A semiconductor device includes a pad disposed on a semiconductor layer, an insulating layer disposed between the semiconductor layer and the pad, a through-via penetrating the semiconductor layer and the insulating layer so as to be connected to the pad, and an isolation layer penetrating the semiconductor layer and surrounding the pad when viewed from a plan view.

Abstract: According to various embodiments, an electronic device comprises: a plurality of communication interfaces; and a control unit which is configured to determine an application program related to a currently-executed communication and select a communication interface to be used from among the plurality of communication interfaces on the basis of at least a part of information related to the application program related to the currently-executed communication, user profile information related to the communication, and information on consumption energy in each communication state of each of the plurality of communication interfaces. Other various embodiments are possible.

Abstract: A manufacturing method for a semiconductor device includes forming a first stacked structure, forming a first hole penetrating the first stacked structure, forming a reflective metal pattern in the first hole, filling an etch stop layer in the first hole and over the reflective metal pattern, forming a second stacked structure over the first stacked structure, and forming a second hole penetrating the second stacked structure to expose the etch stop layer.

Abstract: The present invention relates to a two-speed transmission and includes a first sun gear; a second sun gear; a plurality of first planetary gears which are engaged with the first sun gear to rotate or revolve along a circumferential direction of the first sun gear; a ring gear which includes an inner circumferential gear and an outer circumferential gear, the outer gear rotating by being engaged with an input gear which rotates by a driving device; a plurality of second planetary gears which are engaged with the inner circumferential gear and the second sun gear to rotate or revolve along a circumferential direction of the second sun gear; a carrier to which the first planetary gears and the second planetary gears are rotatably connected; and a brake part which selectively fixes the first sun gear and the second sun gear.

Abstract: A differential for an automobile according to an exemplary embodiment of the present invention includes: a housing in which a pinion gear and a plurality of side gears are disposed and is provided with a flange portion in which a coupling hole is formed at an outer side thereof; and a bush which has an insertion portion which is inserted into the coupling hole and is provided with a thread at an inner surface thereof so as to be coupled with a coupling member. Since the coupling member is not directly coupled to the housing but is coupled to the bush which is connected to the housing, the direct contact friction between the housing and the coupling member which are made of different materials can be avoided and thus the damage of the coupling section can be prevented.

Abstract: A semiconductor device may include a first conductive pattern disposed in a first interlayer insulating film, a second conductive pattern disposed in a second interlayer insulating film positioned on the first interlayer insulating film, a through electrode partially penetrating through the first interlayer insulating film and the second interlayer insulating film. The through electrode electrically connects the first conductive pattern and the second conductive pattern. The device further includes a first pattern completely surrounding side surfaces of the through electrode, and a second pattern between the first pattern and the through electrode. The second pattern is separated from the first pattern and the through electrode. The device includes a third pattern connecting the first pattern and the second pattern.

Abstract: The present disclosure provides an image sensor and a method of manufacturing the same. An image sensor includes a first substrate, a barrier structure, a first structure, a second substrate, and a second structure. The first substrate includes a device region in which unit pixels are disposed and a first residual scribe lane region surrounding the device region. The first substrate has a first surface and a second surface. The barrier structure penetrates the first substrate in the first residual scribe lane region. The first surface of the first substrate is on the first structure. The second substrate includes a second residual scribe lane region facing the first residual scribe lane region. The second substrate has a front surface and a rear surface. The second structure is on the front surface of the second substrate and faces the first surface of the first substrate. The second structure is bonded to the first structure.

Abstract: A manufacturing method for a semiconductor device includes forming a first stacked structure, forming a first hole penetrating the first stacked structure, forming a reflective metal pattern in the first hole, filling an etch stop layer in the first hole and over the reflective metal pattern, forming a second stacked structure over the first stacked structure, and forming a second hole penetrating the second stacked structure to expose the etch stop layer.

Abstract: A manufacturing method for a semiconductor device includes forming a first stacked structure, forming a first hole penetrating the first stacked structure, forming a reflective metal pattern in the first hole, filling an etch stop layer in the first hole and over the reflective metal pattern, forming a second stacked structure over the first stacked structure, and forming a second hole penetrating the second stacked structure to expose the etch stop layer.