Abstract: High voltage schottky diodes are provided including a first conductivity type semiconductor substrate and a second conductivity type well region defined by the substrate. A first conductive film is provided on a surface of the substrate including the well. A conductive electrode is provided on at least one side of the first conductive film above the substrate including the well. An insulating film is provided between the conductive electrode and the substrate. A cathode contact region is provided outside the conductive electrode remote from the first conductive film. The cathode contact region is doped with high concentration impurities having a second conductive type.

Abstract: A method of fabricating a flash memory device is disclosed herein. The method of fabricating a flash memory device includes the steps of forming a gate insulating film, a first conductive film and a nitride film over a semiconductor substrate in which a cell region and a peri region are defined, etching the nitride film, the first conductive film, the gate insulating film and part of the semiconductor substrate to form trenches, forming an isolation film in each trench, primarily etching the isolation films of the cell region and the peri region, removing the nitride film, secondarily etching the isolation film of the cell region, thirdly etching the isolation films of the cell region and the peri region, and forming a dielectric film and a second conductive film on the entire surface including the isolation films.

Abstract: A method of manufacturing a NAND flash memory device, including the steps of providing a semiconductor substrate in which a cell region and a select transistor region are defined; simultaneously forming a plurality of cell gates on the semiconductor substrate of the cell region and forming selection gates on the semiconductor substrate of the select transistor region; forming an oxide film on the entire structure and then forming a nitride film; etching the nitride film so that the nitride film remains only between the selection gates and adjacent edge cell gates; and, blanket etching the oxide film to form spacers on sidewalls of the selection gates. Accordingly, uniform threshold voltage distributions can be secured, and process margins for a spacer etch target can be secured when etching the spacers. Furthermore, the nitride film partially remains between the edge cell gates and the selection gates even after the gate spacers are etched.

Abstract: Disclosed are an antenna and a mobile terminal comprising the antenna with the combination of a dipole and a loop.

Abstract: A method of forming a gate of a flash memory device, including the steps of forming a tunnel oxide film and a first polysilicon layer in an active region of a semiconductor substrate, an isolation film in the field region, a dielectric layer, a second polysilicon layer, a metal silicide film, and a hard mask film on the structure, etching the hard mask film, the metal silicide film, and a given region of the second polysilicon layer to expose the dielectric layer, stripping a top surface of the exposed dielectric layer of the active region and the field region, a part of the first polysilicon layer of the active region to form dielectric layer horns, the first polysilicon layer and a part of the dielectric layer horns of the active region, and the first polysilicon layer and the dielectric layer horns of the active region.

Abstract: In an apparatus for manufacturing semiconductor devices, a container is disposable on a load port and is adapted to accommodate one or more wafers. A transfer robot is installed at a frame and the frame is located between the load port and processing equipment. The transfer robot moves the one or more wafers between the processing equipment and the container. A gas supplying part blows a more desirable gas, e.g., a nitrogen gas or an inert gas, into the container through opening holes formed through a wall of the container. The more desirable gas flows (due to a pressure gradient) from the container to the frame to substantially (if not completely) prevent a less desirable gas (e.g., contaminated air) in the frame from entering the container as the one or more wafers are moved between the container and the processing chamber.

Abstract: Provided is an apparatus for fabricating a semiconductor device using plasma, whereby a semiconductor device fabricating process using plasma provides significantly greater uniformity. The apparatus includes a process chamber, a first electrode through which a radio frequency (RF) power is supplied into the process chamber, a second electrode having a semiconductor substrate placed thereon, wherein the second electrode is disposed in the process chamber to face the first electrode and generates plasma used in fabricating a semiconductor device on the semiconductor substrate using the RF power, and a confinement ring assembly disposed between the first electrode and the second electrode, including a first confinement ring that moves in the vertical direction and a second confinement ring that surrounds the first confinement ring and moves in the vertical direction.

Abstract: Provided is an apparatus for fabricating a semiconductor device using plasma, whereby a semiconductor device fabricating process using plasma provides significantly greater uniformity. The apparatus includes a process chamber, a first electrode through which a radio frequency (RF) power is supplied into the process chamber, a second electrode having a semiconductor substrate placed thereon, wherein the second electrode is disposed in the process chamber to face the first electrode and generates plasma used in fabricating a semiconductor device on the semiconductor substrate using the RF power, and a confinement ring assembly disposed between the first electrode and the second electrode, including a first confinement ring that moves in the vertical direction and a second confinement ring that surrounds the first confinement ring and moves in the vertical direction.

Abstract: The present invention relates to a method of menu-driven control of an external device connected to a digital audio/video apparatus. According to this invention, in response to user's request of a menu image for the external device, a menu image is displayed on a display of the digital audio/video apparatus, menu image including menu items associated with operations of the external device and menu items associated with the request of an image of the detailed menu of the external device. When a menu item for operations of the external device is selected, a command is transmitted to the external device to have the external device perform the desired operation. When a menu item associated with the request of the detailed menu image is chosen, the menu image is received from the external device and is then displayed on the display of the digital audio/video apparatus.