Abstract: Methods and systems for intuitively refocusing images are provided. First, an image is displayed on a touch-sensitive display unit, wherein the image is provided with a capability of focus adjustment. It is determined whether a contact event on the touch-sensitive display unit is detected. When a contact event is detected, the image is magnified according to a specific position where the contact event indicated on the image, and the image is refocused to the specific position.

Abstract: A method for operating a memory is disclosed. The memory has an array of memory cells arranged in a plurality of rows and columns. Each row includes a label storage unit. The method includes receiving a first to-be-programmed data set to be stored into a target row and determining whether a condition is satisfied. When the condition is satisfied, performing a first operation on the first to-be-programmed data set to obtain a second to-be-programmed data set, programming the second to-be-programmed data set into the target row of memory cells, and setting the value of the label storage, unit to be a first labeling value. When the condition is not satisfied, performing a second operation on the first to-be-programmed data set to program the first to-be-programmed data set into the target row of memory cells, and setting the value of the label storage unit to be a second labeling value.

Abstract: A manufacturing method for a liquid crystal display panel is provided. After providing a substrate having an insulation layer thereon, a first metal composite layer is formed on the insulation layer and then patterned to form at least one first opening through the first metal composite layer. A first intermediate dielectric layer is formed within the at least one first opening and a second intermediate dielectric layer is formed on the patterned first metal composite layer. The second intermediate dielectric layer is patterned to form second openings through the second intermediate dielectric layer. A second metal composite layer is formed on the patterned second intermediate dielectric layer and then patterned to form at least one third opening. Then, a third intermediate dielectric layer is formed within the at least one third opening.

Abstract: A method for determining touch point coordinates on capacitive type touch panel includes following steps. A touch panel having a conductive layer, a plurality of first electrodes, and a plurality of second electrodes is provided. A first signal curve As1 is obtained by driving and sensing each first electrode. A second signal curve As2 is obtained by driving and sensing each second electrode. A third signal curve Bs1 is obtained by driving and sensing each first electrode, wherein the second electrode opposite to the sensed first electrode is grounded. A fourth signal curve Bs2 is gotten by driving and sensing each second electrodes, wherein the first electrode opposite to the sensed second electrode is grounded. The coordinates of the touch points are obtained by comparing the first signal curve As1, the second signal curve As2, the third signal curve Bs1, and the fourth signal curve Bs2.

Abstract: Mammals with cancer are treated with an antibody which specifically binds to CD223 protein and inhibits negative T cell regulatory function of CD223. The mammal may be a human. The antibody may be a monoclonal antibody. The amount of the antibody administered may be sufficient to enhance an immune T cell response to the cancer.

Abstract: A touch display module is suitable for being assembled to a back cover of an electronic apparatus. The touch display module includes a frame, a display unit and a touch unit. The frame has a first supporting surface and a second supporting surface. The display unit is supported on the second supporting surface. The touch unit is supported on the first supporting surface and adhered to the display unit and the first supporting surface. The display unit is held between the second supporting surface and the touch unit.

Abstract: A method for recognizing touch on a touch panel is provided. A value T0 is set. First set of sensing and driving electrode pairs are driven and sensed and second set of sensing and driving electrode pairs are driven simultaneously. A number of first signal values C1 are obtained. C1 is compared with T0. When C1 is smaller than the T0, no touch is recognized. When C1 is greater than or equal to T0, following steps are taken. The first set of sensing and driving electrode pairs are driven and sensed and the second set of sensing and driving electrode pairs are connected to ground simultaneously. A number of second signal values C2 are obtained. C1 is compared with C2. When C2 is smaller than or equal to C1, a grounded object touch is recognized. When C2 is greater than C1, a water touch is recognized.

Abstract: A semiconductor device includes a semiconductor substrate that has a first-type active region and a second-type active region, a dielectric layer over the semiconductor substrate, a first metal layer having a first work function formed over the dielectric layer, the first metal layer being at least partially removed from over the second-type active region, a second metal layer over the first metal layer in the first-type active region and over the dielectric layer in the second-type active region, the second metal layer having a second work function, and a third metal layer over the second metal layer in the first-type active region and over the second metal layer in the second-type active region.

Abstract: The present application relates to a method for adjusting the sensitivity of a touch panel. A look up table is built. The look up table includes a charging station look up table and a discharging station look up table. The charging station look up table includes a threshold value (V0m) of a touch signal, an electrical quantity (A0i) corresponding to the threshold value (V0m), and a computational method g1. The discharging station look up table includes the threshold value (V0m), the electrical quantity (A0i), and a computational method g2. The current electrical quantity and whether the capacitive touch panel is charging are detected. According to the current electrical quantity, the state of charging or discharging, and the computational method g1 or g2, the threshold value (V0m) is adjusted.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a first metal layer over capping layer in the first region and over the high-k dielectric in the second region, thereafter, forming a first gate stack in the first region and a second gate stack in the second region, protecting the first metal layer in the first gate stack while performing a treatment process on the first metal layer in the second gate stack, and forming a second metal layer over the first metal layer in the first gate stack and over the treated first metal layer in the second gate stack.

Abstract: An electronic apparatus with haptic feedback and a method for providing haptic feedback are provided. The method includes the following steps. An actuation unit is provided to generate haptic feedback. In response to at least a haptic command, a control value is dynamically generated to control the actuation unit to generate haptic feedback, wherein dynamic range compression is applied to dynamically generate the control value so as to control the magnitude of haptic feedback to be substantially within a vibration range.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a first metal layer over capping layer in the first region and over the high-k dielectric in the second region, thereafter, forming a first gate stack in the first region and a second gate stack in the second region, protecting the first metal layer in the first gate stack while performing a treatment process on the first metal layer in the second gate stack, and forming a second metal layer over the first metal layer in the first gate stack and over the treated first metal layer in the second gate stack.

Abstract: A transmission device includes a mounting frame having an abutting member, a driving sleeve sleeved fixedly on a drive shaft extending through the base plate, a transmission wheel sleeved rotatably on the driving sleeve, and a connecting post extending through a radially extending through hole in the transmission wheel and into a spiral first guiding groove in the driving sleeve having opposite first and second ends. A position-limiting member is disposed rotatably on a side surface of the transmission wheel. A ball is disposed in a ball-receiving hole in the position-limiting member and is movable in a curved second guiding groove in the side surface of the transmission wheel having a shallower first end and a deeper second end. When the drive shaft rotates regularly and reversely, the ball is spaced apart from the abutting member.

Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first active region and a second active region, forming a first metal layer over a high-k dielectric layer, removing at least a portion of the first metal layer in the second active region, forming a second metal layer on first metal layer in the first active region and over the high-k dielectric layer in the second active region, and thereafter, forming a silicon layer over the second metal layer. The method further includes removing the silicon layer from the first gate stack thereby forming a first trench and from the second gate stack thereby forming a second trench, and forming a third metal layer over the second metal layer in the first trench and over the second metal layer in the second trench.

Abstract: An information sharing method and a system using the same are provided. The information sharing method includes establishing a wireless connection between a first device and a second device. The method also includes determining whether a first surface of the first device is in proximity to a second surface of the second device according to an audio-based authorization mechanism, and the audio-based authorization mechanism is activated through an authorization audio message in which an identification message is embedded. If it is determined that the first surface is in proximity to the second surface, the method further includes sharing information by the first device with the second device through the wireless connection.

Abstract: A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a first MOS device of a first conductivity type and a second MOS device of a second conductivity type opposite the first conductivity type. The first MOS device includes a first gate dielectric on a semiconductor substrate; a first metal-containing gate electrode layer over the first gate dielectric; and a silicide layer over the first metal-containing gate electrode layer. The second MOS device includes a second gate dielectric on the semiconductor substrate; a second metal-containing gate electrode layer over the second gate dielectric; and a contact etch stop layer having a portion over the second metal-containing gate electrode layer, wherein a region between the portion of the contact etch stop layer and the second metal-containing gate electrode layer is substantially free from silicon.

Abstract: A method of forming an isolation trench having localized stressors is provided. In accordance with embodiments of the present invention, a trench is formed in a substrate and partially filled with a dielectric material. In an embodiment, the trench is filled with a dielectric layer and a planarization step is performed to planarize the surface with the surface of the substrate. The dielectric material is then recessed below the surface of the substrate. In the recessed portion of the trench, the dielectric material may remain along the sidewalls or the dielectric material may be removed along the sidewalls. A stress film, either tensile or compressive, may then be formed over the dielectric material within the recessed portion. The stress film may also extend over a transistor or other semiconductor structure.

Abstract: We demonstrate herein that neuritin controls the homeostasis of regulatory T cells in an antigen dependent manner. Based on this discovery, we describe herein the application of neuritin as a therapeutic agent to manipulate antigen specific regulatory T cells in various disease settings is described. Thus manipulation of Treg cells and DCs through neuritin can be used to enhance immunotherapy of autoimmune diseases, cancer and infectious diseases, as well as enhance lymphocyte engraftment in settings of donor lymphocyte infusion, bone marrow transplant, as well as other types of transplants, and adoptive transfer.

Abstract: An isolation trench having localized stressors is provided. In accordance with embodiments of the present invention, a trench is formed in a substrate and partially filled with a dielectric material. In an embodiment, the trench is filled with a dielectric layer and a planarization step is performed to planarize the surface with the surface of the substrate. The dielectric material is then recessed below the surface of the substrate. In the recessed portion of the trench, the dielectric material may remain along the sidewalls or the dielectric material may be removed along the sidewalls. A stress film, either tensile or compressive, may then be formed over the dielectric material within the recessed portion. The stress film may also extend over a transistor or other semiconductor structure.

Abstract: An information sharing method and a system using the same are provided. The information sharing method includes establishing a wireless connection between a first device and a second device. The method also includes determining whether a first surface of the first device is in proximity to a second surface of the second device according to an audio-based authorization mechanism, and the audio-based authorization mechanism is activated through an authorization audio message in which an identification message is embedded. If it is determined that the first surface is in proximity to the second surface, the method further includes sharing information by the first device with the second device through the wireless connection.