Abstract: The present invention discloses a method for finding an optimized filter parameters design to meet input specifications and hardware constraints in accordance with a typical single channel digital IF programmable downconverter. Said typical single channel digital IF programmable downconverter comprises four stages, including a high speed down-sampling stage, a spectral shaping stage, a rate matching stage and an oversampling stage. According to input specifications, said method firstly determines a number of Halfband interpolation filters used in said oversampling stage, secondly obtains optimized parameters for a CIC decimation filter and a Halfband decimation filter in said high speed down-sampling stage, using as many Halfband decimation filters as possible. Then determine if it is necessary to use re-sampling FIR filter for rate matching.

Abstract: An on-system programmable and off-system programmable chip comprises a control circuit connected to an on-system programmable nonvolatile memory and an off-system programmable nonvolatile memory, and a pumping circuit connected to the on-system programmable nonvolatile memory. In a programming mode of the chip, external programming voltages are provided for programming the off-system programmable nonvolatile memory, and in an operation mode of the chip, the pumping circuit produces internal programming voltages for the on-system programmable nonvolatile memory for programming the on-system programmable nonvolatile memory.

Abstract: Disclosed is an integrated circuit device with expandable nonvolatile memory characterized in that a control unit and a voltage generator for memory operation are independently integrated into a common circuit instead of included in each single integrated circuit memory device and shared by at least one integrated circuit memory device. Therefore, multiple circuits such as control urn its and voltage generators and the chip area they occupy in each single integrated circuit memory device are reduced, so that not only the chip size and fabrication cost of the integrated circuit memory devices are decreased, but also the memory capacity is more flexible and adaptive for various applications.