Abstract: An integrated module of acoustic wave device with active thermal compensation comprises a substrate, an acoustic wave filter, an active adjustment circuit and at least one variable capacitance device. The acoustic wave filter comprises a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. Each of the variable capacitance device is connected in parallel to one of the series and shunt acoustic wave resonators. The active adjustment circuit outputs an active thermal compensation signal correlated to a thermal variation sensed by the thermal sensing acoustic wave resonator to the variable capacitance device. The active thermal compensation signal induces a capacitance variation of the variable capacitance device such that the impact of the thermal variation to the acoustic wave device is compensated.

Abstract: An acoustic wave filter having thermal sensing acoustic wave resonator comprises a substrate, a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. The thermal sensing acoustic wave resonator is one of a series acoustic wave resonator and a shunt acoustic wave resonator. Thereby the thermal sensing acoustic wave resonator plays dual roles of thermal sensing and acoustic wave filtering.

Abstract: A patterns forming method begins with performing a lithography process on a photoresist film with a photomask having first apertures in a first mask region and second apertures in a second mask region to respectively form first main features and dummy features, on which the second mask region is located between the border of the photomask and the first mask region, and a size of each of the first apertures is greater than a size of each of the second apertures. Subsequently, a material is filled into the first main features to respectively form second main features and into the dummy features to seal the dummy features. Then, a substrate is etched to form patterned features by using the photoresist film having the second main features.

Abstract: A method for forming a patterned layer is provided. The method comprises forming a first material layer over a first substrate, forming a photoresist layer on the first material layer, wherein the photoresist layer includes at least one island portion and a spacing surrounding a lateral portion of the island portion, trimming the island portion to enlarge the spacing, forming a second material layer filled in the enlarged spacing and surrounding the trimmed island portion, removing the trimmed island portion to form a first opening passing through the second material layer and exposing a portion of the first material layer, and removing the exposed portion of the first material layer through the first opening to form a second opening in the first material layer.

Abstract: A substrate having a target material layer is provided. A first hard mask layer, a second hard mask layer, and a photoresist layer are formed on the target material layer. The photoresist layer is transferred into first patterns on the second hard mask layer. Regions of the second hard mask layer not protected by the first patterns are etched away, thereby forming second patterns. The first patterns are trimmed to form trimmed features. A conformal spacer material layer is deposited on the trimmed features, the second patterns, and the first hard mask. The spacer material layer is etched to form first spacers on sidewalls of the trimmed features, and second spacers on sidewalls of the second patterns. The trimmed features are removed. Regions of the second patterns not protected by the first spacers are removed, thereby forming patterns with a reduced, fine pitch.

Abstract: Systems and methods which utilize functional objects in connectivity analysis are shown. Functional objects may be denoted by a geological feature, a user-defined location, a critical point in a connection network, a region within a 3D volume, etc. Each functional object preferably possesses and/or has associated therewith an ability to obtain information such as relevant connection pathways, linked regions of interest, statistical connection information, etc. Such functional objects may have dynamic regions associated therewith, such as to define an area of uncertainty, for facilitating exploring connectivity. Desired connectivity information can be revealed interactively from within a confusing web of connection pathways through use of the functional objects. Through interactive manipulation of functional objects analysis may be refined or revised. Additionally or alternatively, logical operations may be applied with respect to one or more functional objects to extend or reduce the connectivity of interest.

Abstract: A method of forming patterns includes the steps of providing a substrate on which a target layer and a hard mask layer are formed; forming a plurality of first resist patterns on the hard mask layer; performing a tilt-angle ion implant process to form a first doped area and a second doped area in the hard mask layer between adjacent two of the first resist patterns; removing the first resist patterns; coating a directed self-assembly (DSA) material layer onto the hard mask layer; performing a self-assembling process of the DSA material layer to form repeatedly arranged block copolymer patterns in the DSA material layer; removing undesired portions from the DSA material layer to form second resist patterns on the hard mask layer; transferring the second resist patterns to the hard mask layer to form third resist patterns; and etching the target layer through the third resist patterns.

Abstract: A development apparatus includes a rotatable table for mounting a wafer, and a shower nozzle positioned directly above the rotatable table. The shower nozzle comprises a housing having a liquid inlet and a nozzle plate. The nozzle plate has a plurality of apertures distributed on a major surface of the nozzle plate. Solvent or water is uniformly dispensed onto the wafer through the apertures.

Abstract: A method of forming patterns includes the steps of providing a substrate having a target layer thereon; forming a plurality of first resist patterns on the target layer; depositing a directed self-assembly (DSA) material layer in a blanket manner on the first resist patterns, wherein the DSA material layer fills up a gap between the first resist patterns; subjecting the DSA material layer to a self-assembling process so as to form repeatedly arranged block copolymer patterns in the DSA material layer; and removing undesired portions from the DSA material layer to form second resist patterns on the target layer.

Abstract: A method is provided for displaying selected portions of a three-dimensional (3D) volumetric data set representing a subsurface formation. At least one two-dimensional (2D) canvas is generated. The 2D canvas corresponds to a plane in the 3D data set. The 2D canvas is shown in a first display window. One or more primitives are created on the 2D canvas. A volumetric region of the 3D volumetric data set corresponding to the one or more primitives is identified. The volumetric region is displayed in a 3D scene. The 3D scene is shown in a second display window.

Abstract: A system and method for planning a well path is described. An exemplary method comprises defining a proxy constraint volume as a three-dimensional (3D) cellular volume where each cell has at least one value derived from data from a 3D earth model. An initial well path is defined within user defined drilling parameter constraints. The exemplary method comprises defining acceptable constraint parameters to be applied to values derived from an intersection of the initial well path and the proxy constraint volume. If the intersection of the initial well path and the proxy constraint volume is not within the acceptable constraint parameters, the initial well path may be iteratively adjusted to create successive well paths until at least one of the successive well paths is within the acceptable constraint parameters for the values derived from the intersection of the well path and proxy constraint volume.

Abstract: An aspect of the disclosure provides an access control system configured to verify a user device within a region, based on wireless communication and a confirmation code which may include one or more static key(s) and/or time-varying key(s), and to verify a user of the user device within the region, based on biometric recognition after the user device is verified. In this way, at least one resource is allowed to be accessed when at least the verification of the user is passed. Further, accessing a resource may be consuming, entering, or using the resource. A variety of practical applications may then be performed for the user, due to the allowance of accessing the resource.

Abstract: An exemplary embodiment of the present disclosure illustrates a cable assembly. The cable assembly comprises a first cable and a second cable. The first cable has two contacts at both ends thereof, and the second cable has two contacts at both ends thereof. The first cable and second cable are used for transmitting a first signal and a second signal respectively. A differential signal is formed by the first signal and the second signal, and at least one of those contacts is an adjustable contact. The adjustable contact adjusts an electrical length of the first cable or the second cable to control a phase error between the first signal and the second signal.

Abstract: A thin film transistor (TFT) is provided, which includes a substrate, a first gate layer, an insulation layer, a first source/drain layer, a second source/drain layer, a semiconductor layer, a passivation layer and a second gate layer. The first gate layer is disposed on the substrate. The insulation layer is disposed on the first gate layer. The first source/drain layer is disposed on the insulation layer. The second source/drain layer is disposed on the insulation layer. The semiconductor layer is disposed on the insulation layer and covers the first source/drain layer and the second source/drain layer. The passivation layer is disposed on the insulation layer and covers the semiconductor layer. The second gate layer is disposed on the passivation layer and contacts the first gate layer through a via so that the two gate layers keep a same voltage level.

Abstract: A method is presented for well planning. The method includes modeling one or more reservoir segments within a subsurface model. The reservoir segments, which are associated with target reservoirs, are evaluated prior to creating a well plan based on the reservoir segments to provide a fluid flow path from the reservoir targets to the well pad through the reservoir segments. The method enhances the well planning process through the use of these reservoir segments.

Abstract: A method of fabricating a semiconductor device includes the steps of providing a hard mask cover using a patterned photoresist layer, wherein the patterned photoresist layer comprises at least four first holes arranged in two rows and two columns. Part of the hard mask is removed to form at least four second holes by taking the pattered photoresist layer as a mask. Next, each of the first holes is widened, and the widened first holes and the second holes are filled up by a filler. Later, the patterned photoresist layer is removed entirely. Part of the hard mask is removed to form at least a fourth hole by taking the filler as a mask. Finally, the filler is removed entirely.

Abstract: A method of fabricating a semiconductor device includes the steps of providing a hard mask cover using a patterned photoresist layer, wherein the patterned photoresist layer comprises at least four first holes arranged in two rows and two columns. Part of the hard mask is removed to form at least four second holes by taking the pattered photoresist layer as a mask. Next, each of the first holes is widened, and the widened first holes and the second holes are filled up by a filler. Later, the patterned photoresist layer is removed entirely. Part of the hard mask is removed to form at least a fourth hole by taking the filler as a mask. Finally, the filler is removed entirely.

Abstract: A transfer print structure is provided. The transfer print structure comprises a substrate; a color ink layer including a functional region; and an adhesive device combining the functional region with the substrate.

Abstract: Method for reservoir surveillance using a three-dimensional Earth Model (101) to improve and expedite the surveillance at all scales of investigation (field, reservoir, fault compartment, and individual well) and at all time steps (minutes, hours, days, months, years). The new method allows users to rapidly identify anomalous field and well performance (109) and provides capability to investigate root causes of the performance deviation from predicted (110). Animated co-rendered displays (107) of the earth model and actual (104) and simulated (105) production data enable the user to interactively determine model adjustments back at the basic level of the Earth Model, which are then propagated to a geologic model (102) and then to the reservoir simulator (103) to update it (111) in a physically constrained way.

Abstract: A method, including: identifying a well target or reservoir segment; defining a dynamic surface grid, the dynamic surface grid being a representation of a ground surface, sea-level, or subsea surface above a reservoir upon which a drill center is locatable, and the dynamic surface grid including a plurality of cells that define potential locations for the drill center; assigning, to each of the plurality of cells of the dynamic surface grid, a value of a drilling or geologic attribute that defines a quality of a drill center position relative to the well target or reservoir segment; and selecting, based on a value of the drilling or geologic attribute, a location for the drill center corresponding to a location represented on the dynamic surface grid.