Abstract: An apparatus suitable for marking a substrate comprises a holder for holding a substrate and a ground for electrically grounding the substrate. At least one needle electrode has a tip located proximate to the substrate so that there is a gap between the substrate and the tip. A high voltage source provides a current to the electrode tip to ionize the gas in the gap so that the ionized gas can impinge upon and mark the substrate.

Abstract: An RF signal is rapidly brought to a high power level prior to the introduction of a wafer into the reaction chamber to initiate a plasma that agitates and circulates any particles within the reaction chamber, thereby allowing effective reaction chamber cleaning; and an RF signal is slowly brought to a high power level to initiate a plasma prior to or during wafer processing to avoid disturbing and circulating such particles during wafer processing, thereby preventing particle induced contamination. A magnetic field may be applied to the reaction chamber to move particles from a plasma sheath/glow region interface to a reaction chamber exhaust line, and thereby prevent such particles from falling onto a processed wafer.

Abstract: A novel and improved method of in-situ cleaning unwanted films and particles of a material from a surface situated inside a vacuum chamber by equipping such chamber with a means of generating a magnetic field having a magnetic flux density of at least 25 gauss, flowing at least one gas into the chamber and igniting a plasma and thus producing plasma ions of at least one gas, switching on the magnetic field generating means to a magnetic flux density of no less than 25 gauss and, reducing the magnetic field by a flux density of at least 10 gauss such that the unwanted films and particles of the material are dislodged from the surface by the sudden change in the magnetic flux density at the magnetic field.

Abstract: A technique for removing particles from above a semiconductor wafer, particularly particles that are trapped in a plasma chamber during processing of the wafer. Trapped particles are usually not all drawn out with gases exhausted from the chamber, in part because a peripheral focus ring and clamping mechanism impede their flow. In the method of the invention, the focus ring and clamping mechanism are raised on completion of processing, but before radio-frequency (rf) power is disconnected from the process chamber. Trapped particles are then easily flowed from the chamber with an introduced inert gas, and the level of particulate contamination of the wafer is significantly reduced.

Abstract: Particles are repelled from the upper face of a wafer in a plasma chamber by inducing positive or negative charges on the substrate without generating a gas plasma above the substrate. The charges are induced in the substrate by bringing a conductive sheet carrying a DC voltage close to the underside of the substrate. The particle repelling effect may be enhanced by inducing alternating positive and negative charges in the substrate. This can be done by switching the polarity of the DC voltage applied to the conductive sheet, or alternatively by moving an actuator to repetitively ground and isolate the substrate from the chamber.

Abstract: A process of removing particles from the surface of a substrate to be processed in a vacuum chamber comprising forming a plasma from an inert plasma precursor gas in said chamber, thereby lifting loosely adhered particles from the surface of the substrate, and increasing the flow of said inert gas without increasing the pressure in the vacuum chamber, thereby sweeping the particles beyond the surface of the substrate, where they can be removed by the vacuum chamber exhaust system. Particles having a particle size of about 0.1 micron or larger can be removed in this fashion.

Abstract: A particle monitor for a processing chamber exhaust line is disclosed which incorporates exhaust line heating, purge gas flow over surfaces such as optical windows in the exhaust gas line, and a thermally and electrically insulating particle monitor mounting arrangement. The features collectively protect the particle monitor from electrical disturbance and from the heated inlet and maintain the optical surfaces clean and free of depositions from the exhaust gas flow for an extended period. The arrangement also suppresses etching of the optical surfaces.