Abstract: The invention relates to a connection carrier having at least one contact track which is connected in an electrically conductive manner to a contact surface for electrically contacting a semiconductor component, the contact track having a network structure in at least some locations. The invention further relates to a method for producing a connection carrier having contact tracks.

Abstract: A placement device for placing optoelectronic components on electrical lines includes a holding device for holding at least one electric line extending in a longitudinal direction, and an application device for arranging optoelectronic components on the at least one electrical line.

Abstract: In an embodiment a semiconductor component includes a carrier, at least one semiconductor chip arranged on the carrier, the semiconductor chip having at least one first electrical contact at a main surface of the semiconductor chip facing away from the carrier, an electrically insulating layer arranged on the carrier and at least one electrical connection layer led by the electrically insulating layer to the first electrical contact, wherein the electrically insulating layer includes a photopatternable material.

Abstract: In an embodiment an optoelectronic device includes a carrier and a plurality of semiconductor chips fastened on the carrier by a connector, wherein each semiconductor chip has at least one contact pad on a main surface facing away from the carrier, wherein each contact pad is contacted electrically by an interconnecting track, and wherein the interconnecting track is guided over an edge of the main surface of the semiconductor chip onto the carrier.

Abstract: An irradiation unit is disclosed that includes a pump radiation source for emitting pump radiation in the form of a beam, a conversion element for at least partially converting the pump radiation into conversion radiation, and a support on which the conversion element is situated. The support accommodates a through-hole through which the beam including the pump radiation is incident on an incident surface of the conversion element, the though-hole being laterally delimited by an inner wall face of the support, at least one portion of the face tapering in the direction of the incident surface. During operation, the pump radiation conducted in the beam is at least intermittently at least in part, incident on the inner wall face of the support and is reflected thereby onto the incident surface.

Abstract: A light-emitting window element includes a transparent first carrier layer, a transparent second carrier layer, a substrate with a plurality of light-emitting semiconductor chips arranged thereon, and an optical layer having an adjustable transparency. The substrate with the plurality of light-emitting semiconductor chips and the optical layer are arranged between the first and second carrier layers, and the first and second carrier layers, the substrate with the plurality of light-emitting semiconductor chips and the optical layer form a laminate composite.

Abstract: An optoelectronic component includes at least one optoelectronic semiconductor chip with a main surface on which two electrical contacts are arranged. The optoelectronic component also includes a control chip for controlling the optoelectronic semiconductor chip with a plurality of electrical connection pads. The optoelectronic component further includes a housing with a housing body. The optoelectronic semiconductor chip is arranged with a mounting surface, which extends transversely to the main surface, in a first recess of the housing body. A side surface of the first recess forms an obtuse tilt angle with a bottom surface of the first recess. At least one of the electrical contacts of the optoelectronic semiconductor chip is electrically conductively connected to an electrical connection pad of the control chip via a conductor path. The conductor path is arranged at least in places on the side surface of the first recess.

Abstract: In an embodiment a method for singulating components from a component composite includes providing the component composite comprising a structured substrate including component carrier bodies and connecting portions arranged between the component carrier bodies, and a base material, in which the connecting portions of the structured substrate are at least partially embedded, removing the base material in separating regions of the component composite, which include the connecting portions and singulating the component composite at the separating regions to form the components.

Abstract: An optoelectronic apparatus comprises a transparent first cover, at least layer two carriers mounted on the first cover, wherein a plurality of optoelectronic elements configured to emit light are attached to each of the at least two carriers, and a second cover mounted on the at least two carriers, wherein the second cover has at least partially a lower optical transmittance than the first cover and/or the at least two carriers.

Abstract: An optoelectronic device, in particular a display device, comprises: at least one optoelectronic light source, an at least partially transparent front layer, an at least partially transparent support layer, wherein the light source is arranged between the front layer and the support layer, wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer, and wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light, in particular at an interface between the front layer and the outside, is avoided or at least reduced.

Abstract: An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular ?LEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.

Abstract: An optoelectronic device comprises a plurality of layer segments, in particular intermediate layer segments, arranged between a cover layer and a carrier layer. At least one optoelectronic component is arranged on at least one of the plurality of layer segments and a first and a second layer segment of the plurality of the layer segments are overlapping each other along a first direction each forming a respective boundary region. The first layer segment comprises at least one first contact pad and the second layer segment comprises at least one second contact pad, wherein the at least one first and second contact pad are arranged in the respective boundary region facing each other and being mechanically and electrically connected. The at least one first and second contact pad each comprises a plurality of nanowires which are at least partially made of conductive material such as for example copper, gold, or nickel.

Abstract: An optoelectronic component is specified, with an optoelectronic semiconductor chip which, in operation, is configured to emit or detect electromagnetic radiation, a connection carrier, on which the semiconductor chip is arranged, an electrically conductive connection, which is electrically conductively connected to the semiconductor chip and/or the connection carrier, and an electrically insulating material, which surrounds the semiconductor chip and/or the connection carrier at least in places, wherein the electrically conductive connection is arranged in places on the electrically insulating material. Furthermore, a method for producing an optoelectronic component is specified.

Abstract: An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

Abstract: An optoelectronic device comprises a layer stack, which includes a carrier layer, a cover layer, and a first layer. The first layer is in particular an intermediate layer, arranged between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is arranged on the first layer and at least one layer of the layer stack and preferably all layers of the layer stack are at least partially transparent. The layer stack comprises at least one layer which comprises particles with a high thermal conductivity and/or at least one thermally conductive layer which is arranged between two adjacent layers of the layer stack.

Abstract: An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.

Abstract: In one embodiment, the optoelectronic semiconductor component (1) comprises a semiconductor chip (2) for generating radiation and an inorganic housing (3). The semiconductor chip (2) is accommodated in a hermetically sealed manner in the housing (3). The housing (3) has a preferably ceramic base plate (31), a cover plate (33) and at least one preferably ceramic housing ring (32) and a plurality of electrical through-connections (51). A recess (15), in which the semiconductor chip (2) is located, is formed by the housing ring (32). The base plate (31) has a plurality of electrical connection surfaces (35) on a component underside (11). A plurality of through-connections (51) each extend through the base plate (31), through the cover plate (33) and through the housing ring (32). The base plate (31), the at least one housing ring (32) and the cover plate (33) are firmly connected to one another via continuous, peripheral inorganic sealing frames (6).

Abstract: An optoelectronic light emitting device includes a pixel with a transparent or translucent carrier substrate, on which a semiconductor light emitting arrangement with at least one micro LED is arranged. The micro LED extends over a partial area of the pixel. The main radiation direction of the semiconductor light emitting arrangement is directed onto a backscattering surface element arranged behind the transparent carrier substrate in viewing direction. The semiconductor light emitting arrangement includes a beam shaping element.

Abstract: A device with a lead frame, a moulded body and a plurality of semiconductor chips configured to generate radiation is specified, wherein the lead frame has two connection parts for external electrical contacting of the device; the moulded body is formed to the lead frame; the moulded body is transmissive to the radiation generated during operation of the device; and the semiconductor chips are arranged on a front-side of the moulded body and each of the semiconductor chips overlap with the device with the moulded body in plan view of the device. Furthermore, a method for producing devices is specified.

Abstract: A device includes a carrier and a plurality of semiconductor chips configured to generate radiation. The carrier includes a lead frame. The lead frame includes two connecting parts for external electrical contacting of the device. The semiconductor chips are arranged on the carrier. The carrier is surrounded by a casing at least in places along its entire circumference. The casing forms a side face of the device at least in places. The side face includes traces of material removal.