Patents by Inventor Andreas Knorr

Andreas Knorr has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11377417
    Abstract: The present application relates to novel 3-phenylpropionic acid derivatives which carry a branched or cyclic alkyl substituent in the 3-position, to processes for their preparation, to their use for the treatment and/or prevention of diseases and to their use for preparing medicaments for the treatment and/or prevention of diseases, in particular for the treatment and/or prevention of cardiovascular diseases.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: July 5, 2022
    Assignee: Bayer Intellectual Property GmbH
    Inventors: Michael Hahn, Thomas Lampe, Johannes-Peter Stasch, Karl-Heinz Schlemmer, Frank Wunder, Volkhart Min-Jian Li, Eva Maria Becker-Pelster, Friederike Stoll, Andreas Knorr, Elisabeth Woltering
  • Patent number: 10961221
    Abstract: The present application relates to novel substituted piperidinyltetrahydroquinolines, to processes for their preparation, to their use for the treatment and/or prevention of diseases and to their use for preparing medicaments for the treatment and/or prevention of diseases, in particular for the treatment and/or prevention of diabetic microangiopathies, diabetic ulcers on the extremities, in particular for promoting wound healing of diabetic foot ulcers, diabetic heart failure, diabetic coronary microvascular heart disorders, peripheral and cardial vascular disorders, thromboembolic disorders and ischaemias, peripheral circulatory disturbances, Raynaud's phenomenon, CREST syndrome, microcirculatory disturbances, intermittent claudication, and peripheral and autonomous neuropathies.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: March 30, 2021
    Assignee: BAYER PHARMA AKTIENGESELLSCHAFT
    Inventors: Eva Maria Becker-Pelster, Philipp Buchgraber, Anja Buchmüller, Karen Engel, Volker Geiss, Andreas Göller, Herbert Himmel, Raimund Kast, Andreas Knorr, Dieter Lang, Gorden Redlich, Carsten Schmeck, Hanna Tinel, Frank Wunder
  • Patent number: 10937693
    Abstract: At least one method, apparatus and system disclosed herein involves forming local interconnect regions during semiconductor device manufacturing. A plurality of fins are formed on a semiconductor substrate. A gate region is over a portion of the fins. A trench silicide (TS) region is formed adjacent a portion of the gate region. The TS region comprises a first TS metal feature and a second TS metal feature. A bi-layer self-aligned contact (SAC) cap is formed over a first portion of the TS region and electrically coupled to a portion of the gate region. A portion of the bi-layer SAC cap is removed to form a first void. A first local interconnect feature is formed in the first void.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: March 2, 2021
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ruilong Xie, Andreas Knorr, Haiting Wang, Hui Zang
  • Publication number: 20200397785
    Abstract: The present application relates to novel substituted 5-fluoro-1H-pyrazolopyridines, to processes for their preparation, to their use alone or in combinations for the treatment and/or prophylaxis of diseases, and to their use for producing medicaments for the treatment and/or prophylaxis of diseases, in particular for the treatment and/or prophylaxis of cardiovascular disorders.
    Type: Application
    Filed: July 2, 2020
    Publication date: December 24, 2020
    Applicant: Adverio Pharma GmbH
    Inventors: Markus Follmann, Johannes-Peter Stasch, Gorden Redlich, Jens Ackerstaff, Nils Griebenow, Walter Kroh, Andreas Knorr, Eva-Maria Becker, Frank Wunder, Volkhart Min-Jian Li, Elke Hartmann, Joachim Mittendorf, Karl-Heinz Schlemmer, Rolf Jautelat, Donald Bierer
  • Publication number: 20200385335
    Abstract: The present application relates to novel 3-phenylpropionic acid derivatives which carry a branched or cyclic alkyl substituent in the 3-position, to processes for their preparation, to their use for the treatment and/or prevention of diseases and to their use for preparing medicaments for the treatment and/or prevention of diseases, in particular for the treatment and/or prevention of cardiovascular diseases.
    Type: Application
    Filed: June 18, 2020
    Publication date: December 10, 2020
    Applicant: Bayer Intellectual Property GmbH
    Inventors: Michael Hahn, Thomas Lampe, Johannes-Peter Stasch, Karl-Heinz Schlemmer, Frank Wunder, Volkhart Min-Jian Li, Eva Maria Becker-Pelster, Friederike Stoll, Andreas Knorr, Elisabeth Woltering
  • Publication number: 20200315872
    Abstract: A disposable absorbent article having a topsheet, a backsheet, an absorbent core disposed between the topsheet and the backsheet, and a fluid management layer disposed between the topsheet and the absorbent core is disclosed. The disposable absorbent article provides improved fluid acquisition, improved stain size control, and improved performance when wet.
    Type: Application
    Filed: March 27, 2020
    Publication date: October 8, 2020
    Inventors: Gerard A. Viens, Carlos Domingo NaranjoMartin, Paul Dominic Mellor, Andreas Knorr
  • Publication number: 20200315871
    Abstract: A fluid management layer having an integrated, carded nonwoven is described. The fluid management layer has a basis weight of between about 40 grams per square meter (gsm) and about 75 gsm, and a plurality of absorbent fibers, a plurality of stiffening fibers and a plurality of resilient fibers. The fluid management layer has a compression distance of at least 0.
    Type: Application
    Filed: March 27, 2020
    Publication date: October 8, 2020
    Inventors: Gerard A. Viens, Carlos Domingo NaranjoMartin, Paul Dominic Mellor, Andreas Knorr
  • Publication number: 20200315873
    Abstract: A fluid management layer having an integrated, carded nonwoven is described. The fluid management layer has a basis weight of between about 40 grams per square meter (gsm) and about 75 gsm; a plurality of absorbent fibers; a plurality of stiffening fibers; and a plurality of resilient fibers. The fluid management layer has a caliper factor of at least about 0.13.
    Type: Application
    Filed: March 27, 2020
    Publication date: October 8, 2020
    Inventors: Gerard A. Viens, Carlos Domingo NaranjoMartin, Paul Dominic Mellor, Andreas Knorr
  • Publication number: 20200315874
    Abstract: A disposable absorbent article having a topsheet, a backsheet, an absorbent core disposed between the topsheet and the backsheet, and a fluid management layer disposed between the topsheet and the absorbent core is disclosed. The fluid management layer is an integrated, carded, nonwoven disposed between the topsheet and the absorbent core. The absorbent article exhibits an average stain size of less than about 2400 mm{circumflex over (?)}2, when measured in accordance with the Stain Size test method.
    Type: Application
    Filed: March 27, 2020
    Publication date: October 8, 2020
    Inventors: Gerard A. Viens, Carlos Domingo NaranjoMartin, Paul Dominic Mellor, Andreas Knorr
  • Patent number: 10736896
    Abstract: The present application relates to novel substituted 5-fluoro-1H-pyrazolopyridines, to processes for their preparation, to their use alone or in combinations for the treatment and/or prophylaxis of diseases, and to their use for producing medicaments for the treatment and/or prophylaxis of diseases, in particular for the treatment and/or prophylaxis of cardiovascular disorders.
    Type: Grant
    Filed: May 16, 2018
    Date of Patent: August 11, 2020
    Assignee: ADVERIO PHARMA GMBH
    Inventors: Markus Follmann, Johannes-Peter Stasch, Gorden Redlich, Jens Ackerstaff, Nils Griebenow, Walter Kroh, Andreas Knorr, Eva-Maria Becker, Frank Wunder, Volkhart Min-Jian Li, Elke Hartmann, Joachim Mittendorf, Karl-Heinz Schlemmer, Rolf Jautelat, Donald Bierer
  • Patent number: 10662185
    Abstract: The present application relates to novel substituted imidazo[1,2-a]pyridine-3-carboxamides of the general formula (I) to processes for their preparation, to their use alone or in combinations for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, in particular for the treatment and/or prophylaxis of cardiovascular disorders.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: May 26, 2020
    Assignee: BAYER PHARMA AKTIENGESELLSCHAFT
    Inventors: Alexandros Vakalopoulos, Markus Follman, Ingo Hartung, Philipp Buchgraber, Rolf Jautelat, Jorma Haßfeld, Niels Lindner, Alexey Gromov, Frank Wunder, Johannes-Peter Stasch, Gorden Redlich, Volkhart Min-Jian Li, Eva Maria Becker-Pelster, Andreas Knorr
  • Patent number: 10644157
    Abstract: Disclosed are methods of forming a semiconductor structure including a bulk semiconductor substrate and, on the substrate, a fin-type field effect transistor (FINFET) with a uniform channel length and a below-channel buried insulator. In the methods, a semiconductor fin is formed with a sacrificial semiconductor layer between lower and upper semiconductor layers. During processing, the sacrificial semiconductor layer is replaced with dielectric spacer material (i.e., a buried insulator). The buried insulator functions as an etch stop layer when etching source/drain recesses, ensuring that they have vertical sidewalls and, thereby ensuring that the channel region has a uniform length. The buried insulator also provides isolation between channel region and the substrate below and prevents dopant diffusion into the channel region from a punch-through stopper (if present). Optionally, the buried insulator is formed so as to contain an air-gap. Also disclosed are structures resulting from the methods.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: May 5, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Julien Frougier, Ruilong Xie, Andreas Knorr, Srikanth Balaji Samavedam
  • Publication number: 20200105597
    Abstract: At least one method, apparatus and system disclosed herein involves forming local interconnect regions during semiconductor device manufacturing. A plurality of fins are formed on a semiconductor substrate. A gate region is over a portion of the fins. A trench silicide (TS) region is formed adjacent a portion of the gate region. The TS region comprises a first TS metal feature and a second TS metal feature. A bi-layer self-aligned contact (SAC) cap is formed over a first portion of the TS region and electrically coupled to a portion of the gate region. A portion of the bi-layer SAC cap is removed to form a first void. A first local interconnect feature is formed in the first void.
    Type: Application
    Filed: October 2, 2018
    Publication date: April 2, 2020
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Ruilong Xie, Andreas Knorr, Haiting Wang, Hui Zang
  • Publication number: 20200044069
    Abstract: Disclosed are methods of forming a semiconductor structure including a bulk semiconductor substrate and, on the substrate, a fin-type field effect transistor (FINFET) with a uniform channel length and a below-channel buried insulator. In the methods, a semiconductor fin is formed with a sacrificial semiconductor layer between lower and upper semiconductor layers. During processing, the sacrificial semiconductor layer is replaced with dielectric spacer material (i.e., a buried insulator). The buried insulator functions as an etch stop layer when etching source/drain recesses, ensuring that they have vertical sidewalls and, thereby ensuring that the channel region has a uniform length. The buried insulator also provides isolation between channel region and the substrate below and prevents dopant diffusion into the channel region from a punch-through stopper (if present). Optionally, the buried insulator is formed so as to contain an air-gap. Also disclosed are structures resulting from the methods.
    Type: Application
    Filed: July 31, 2018
    Publication date: February 6, 2020
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Julien Frougier, Ruilong Xie, Andreas Knorr, Srikanth Balaji Samavedam
  • Patent number: 10475899
    Abstract: A method of forming a GAA FinFET, including: forming a fin on a substrate, the substrate having a STI layer formed thereon and around a portion of a FIN-bottom portion of the fin, the fin having a dummy gate formed thereover, the dummy gate having a gate sidewall spacer on sidewalls thereof; forming a FIN-void and an under-FIN cavity in the STI layer; forming first spacers by filling the under-FIN cavity and FIN-void with a first fill; removing the dummy gate, thereby exposing both FIN-bottom and FIN-top portions of the fin underneath the gate; creating an open area underneath the exposed FIN-top by removing the exposed FIN-bottom; and forming a second spacer by filling the open area with a second fill; wherein a distance separates a top-most surface of the second spacer from a bottom-most surface of the FIN-top portion. A GAA FinFET formed by the method is also disclosed.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: November 12, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ruilong Xie, Andreas Knorr, Julien Frougier, Hui Zang, Min-hwa Chi
  • Patent number: 10424657
    Abstract: A tri-gate FinFET device includes a fin that is positioned vertically above and spaced apart from an upper surface of a semiconductor substrate, wherein the fin has an upper surface, a lower surface opposite of the upper surface, a first side surface, and a second side surface opposite of the first side surface. The axis of the fin in a height direction of the fin is oriented substantially parallel to the upper surface of the semiconductor substrate, and the first side surface of the fin contacts an insulating material. A gate structure is positioned around the upper surface, the second side surface, and the lower surface of the fin, and a gate contact structure is conductively coupled to the gate structure.
    Type: Grant
    Filed: February 9, 2017
    Date of Patent: September 24, 2019
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Ruilong Xie, Andreas Knorr
  • Patent number: 10411010
    Abstract: Disclosed are methods of forming improved fin-type field effect transistor (FINFET) structures and, particularly, relatively tall single-fin FINFET structures that provide increased drive current over conventional single-fin FINFET structures. The use of such a tall single-fin FINFET provides significant area savings over a FINFET that requires multiple semiconductor fins to achieve the same amount of drive current. Furthermore, since only a single fin is used, only a single leakage path is present at the bottom of the device. Thus, the disclosed FINFET structures can be incorporated into a cell in place of multi-fin FINFETs in order to allow for cell height scaling without violating critical design rules or sacrificing performance.
    Type: Grant
    Filed: January 4, 2018
    Date of Patent: September 10, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ruilong Xie, Andreas Knorr, Murat Kerem Akarvardar, Lars Liebmann, Nigel Graeme Cave
  • Publication number: 20190248783
    Abstract: The present application relates to novel substituted imidazo[1,2-a]pyridine-3-carboxamides, to processes for their preparation, to their use alone or in combinations for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, in particular for the treatment and/or prophylaxis of cardiovascular disorders.
    Type: Application
    Filed: July 2, 2018
    Publication date: August 15, 2019
    Applicant: BAYER PHARMA AKTIENGESELLSCHAFT
    Inventors: Alexandros VAKALOPOULOS, Markus FOLLMAN, Ingo HARTUNG, Philipp BUCHGRABER, Rolf JAUTELAT, Jorma HAßFELD, Niels LINDNER, Alexey GROMOV, Frank WUNDER, Johannes-Peter STASCH, Gorden REDLICH, Volkhart Min-Jian LI, Eva Maria BECKER-PELSTER, Andreas KNORR
  • Patent number: 10381459
    Abstract: A semiconductor structure including a first substantially U-shaped and/or H-shaped channel is disclosed. The semiconductor structure may further include a second substantially U-shaped and/or H-shaped channel positioned above the first channel. A method of forming a substantially U-shaped and/or H-shaped channel is also disclosed. The method may include forming a fin structure on a substrate where the fin structure includes an alternating layers of sacrificial semiconductor and at least one silicon layer or region. The method may further include forming additional silicon regions vertically on sidewalls of the fin structure. The additional silicon regions may contact the silicon layer or region of the fin structure to form the substantially U-shaped and/or H-shaped channel(s). The method may further include removing the sacrificial semiconductor layers and forming a gate structure around the substantially U-shaped and/or substantially H-shaped channels.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: August 13, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ruilong Xie, Julien Frougier, Yi Qi, Nigel G. Cave, Edward J. Nowak, Andreas Knorr
  • Publication number: 20190214482
    Abstract: A semiconductor structure including a first substantially U-shaped and/or H-shaped channel is disclosed. The semiconductor structure may further include a second substantially U-shaped and/or H-shaped channel positioned above the first channel. A method of forming a substantially U-shaped and/or H-shaped channel is also disclosed. The method may include forming a fin structure on a substrate where the fin structure includes an alternating layers of sacrificial semiconductor and at least one silicon layer or region. The method may further include forming additional silicon regions vertically on sidewalls of the fin structure. The additional silicon regions may contact the silicon layer or region of the fin structure to form the substantially U-shaped and/or H-shaped channel(s). The method may further include removing the sacrificial semiconductor layers and forming a gate structure around the substantially U-shaped and/or substantially H-shaped channels.
    Type: Application
    Filed: January 9, 2018
    Publication date: July 11, 2019
    Inventors: Ruilong Xie, Julien Frougier, Yi Qi, Nigel G. Cave, Edward J. Nowak, Andreas Knorr