Patents by Inventor Andreas Knorr
Andreas Knorr has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200044069Abstract: Disclosed are methods of forming a semiconductor structure including a bulk semiconductor substrate and, on the substrate, a fin-type field effect transistor (FINFET) with a uniform channel length and a below-channel buried insulator. In the methods, a semiconductor fin is formed with a sacrificial semiconductor layer between lower and upper semiconductor layers. During processing, the sacrificial semiconductor layer is replaced with dielectric spacer material (i.e., a buried insulator). The buried insulator functions as an etch stop layer when etching source/drain recesses, ensuring that they have vertical sidewalls and, thereby ensuring that the channel region has a uniform length. The buried insulator also provides isolation between channel region and the substrate below and prevents dopant diffusion into the channel region from a punch-through stopper (if present). Optionally, the buried insulator is formed so as to contain an air-gap. Also disclosed are structures resulting from the methods.Type: ApplicationFiled: July 31, 2018Publication date: February 6, 2020Applicant: GLOBALFOUNDRIES INC.Inventors: Julien Frougier, Ruilong Xie, Andreas Knorr, Srikanth Balaji Samavedam
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Patent number: 10475899Abstract: A method of forming a GAA FinFET, including: forming a fin on a substrate, the substrate having a STI layer formed thereon and around a portion of a FIN-bottom portion of the fin, the fin having a dummy gate formed thereover, the dummy gate having a gate sidewall spacer on sidewalls thereof; forming a FIN-void and an under-FIN cavity in the STI layer; forming first spacers by filling the under-FIN cavity and FIN-void with a first fill; removing the dummy gate, thereby exposing both FIN-bottom and FIN-top portions of the fin underneath the gate; creating an open area underneath the exposed FIN-top by removing the exposed FIN-bottom; and forming a second spacer by filling the open area with a second fill; wherein a distance separates a top-most surface of the second spacer from a bottom-most surface of the FIN-top portion. A GAA FinFET formed by the method is also disclosed.Type: GrantFiled: November 14, 2018Date of Patent: November 12, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Ruilong Xie, Andreas Knorr, Julien Frougier, Hui Zang, Min-hwa Chi
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Patent number: 10424657Abstract: A tri-gate FinFET device includes a fin that is positioned vertically above and spaced apart from an upper surface of a semiconductor substrate, wherein the fin has an upper surface, a lower surface opposite of the upper surface, a first side surface, and a second side surface opposite of the first side surface. The axis of the fin in a height direction of the fin is oriented substantially parallel to the upper surface of the semiconductor substrate, and the first side surface of the fin contacts an insulating material. A gate structure is positioned around the upper surface, the second side surface, and the lower surface of the fin, and a gate contact structure is conductively coupled to the gate structure.Type: GrantFiled: February 9, 2017Date of Patent: September 24, 2019Assignee: GLOBALFOUNDRIES Inc.Inventors: Ruilong Xie, Andreas Knorr
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Patent number: 10411010Abstract: Disclosed are methods of forming improved fin-type field effect transistor (FINFET) structures and, particularly, relatively tall single-fin FINFET structures that provide increased drive current over conventional single-fin FINFET structures. The use of such a tall single-fin FINFET provides significant area savings over a FINFET that requires multiple semiconductor fins to achieve the same amount of drive current. Furthermore, since only a single fin is used, only a single leakage path is present at the bottom of the device. Thus, the disclosed FINFET structures can be incorporated into a cell in place of multi-fin FINFETs in order to allow for cell height scaling without violating critical design rules or sacrificing performance.Type: GrantFiled: January 4, 2018Date of Patent: September 10, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Ruilong Xie, Andreas Knorr, Murat Kerem Akarvardar, Lars Liebmann, Nigel Graeme Cave
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Publication number: 20190248783Abstract: The present application relates to novel substituted imidazo[1,2-a]pyridine-3-carboxamides, to processes for their preparation, to their use alone or in combinations for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, in particular for the treatment and/or prophylaxis of cardiovascular disorders.Type: ApplicationFiled: July 2, 2018Publication date: August 15, 2019Applicant: BAYER PHARMA AKTIENGESELLSCHAFTInventors: Alexandros VAKALOPOULOS, Markus FOLLMAN, Ingo HARTUNG, Philipp BUCHGRABER, Rolf JAUTELAT, Jorma HAßFELD, Niels LINDNER, Alexey GROMOV, Frank WUNDER, Johannes-Peter STASCH, Gorden REDLICH, Volkhart Min-Jian LI, Eva Maria BECKER-PELSTER, Andreas KNORR
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Patent number: 10381459Abstract: A semiconductor structure including a first substantially U-shaped and/or H-shaped channel is disclosed. The semiconductor structure may further include a second substantially U-shaped and/or H-shaped channel positioned above the first channel. A method of forming a substantially U-shaped and/or H-shaped channel is also disclosed. The method may include forming a fin structure on a substrate where the fin structure includes an alternating layers of sacrificial semiconductor and at least one silicon layer or region. The method may further include forming additional silicon regions vertically on sidewalls of the fin structure. The additional silicon regions may contact the silicon layer or region of the fin structure to form the substantially U-shaped and/or H-shaped channel(s). The method may further include removing the sacrificial semiconductor layers and forming a gate structure around the substantially U-shaped and/or substantially H-shaped channels.Type: GrantFiled: January 9, 2018Date of Patent: August 13, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Ruilong Xie, Julien Frougier, Yi Qi, Nigel G. Cave, Edward J. Nowak, Andreas Knorr
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Publication number: 20190214482Abstract: A semiconductor structure including a first substantially U-shaped and/or H-shaped channel is disclosed. The semiconductor structure may further include a second substantially U-shaped and/or H-shaped channel positioned above the first channel. A method of forming a substantially U-shaped and/or H-shaped channel is also disclosed. The method may include forming a fin structure on a substrate where the fin structure includes an alternating layers of sacrificial semiconductor and at least one silicon layer or region. The method may further include forming additional silicon regions vertically on sidewalls of the fin structure. The additional silicon regions may contact the silicon layer or region of the fin structure to form the substantially U-shaped and/or H-shaped channel(s). The method may further include removing the sacrificial semiconductor layers and forming a gate structure around the substantially U-shaped and/or substantially H-shaped channels.Type: ApplicationFiled: January 9, 2018Publication date: July 11, 2019Inventors: Ruilong Xie, Julien Frougier, Yi Qi, Nigel G. Cave, Edward J. Nowak, Andreas Knorr
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Publication number: 20190185415Abstract: The present application relates to novel 3-phenylpropionic acid derivatives which carry a branched or cyclic alkyl substituent in the 3-position, to processes for their preparation, to their use for the treatment and/or prevention of diseases and to their use for preparing medicaments for the treatment and/or prevention of diseases, in particular for the treatment and/or prevention of cardiovascular diseases.Type: ApplicationFiled: December 21, 2018Publication date: June 20, 2019Applicant: BAYER INTELLECTUAL PROPERTY GMBHInventors: Michael HAHN, Thomas LAMPE, Johannes-Peter STASCH, Karl-Heinz SCHLEMMER, Frank WUNDER, Volkhart Min-Jian LI, Eva-Maria BECKER-PELSTER, Friederike STOLL, Andreas KNORR, Elisabeth WOLTERING
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Patent number: 10323020Abstract: The present application relates to novel substituted piperidinyltetrahydroquinolines, to processes for their preparation, to their use for the treatment and/or prevention of diseases and to their use for preparing medicaments for the treatment and/or prevention of diseases, in particular for the treatment and/or prevention of diabetic microangiopathies, diabetic ulcers on the extremities, in particular for promoting wound healing of diabetic foot ulcers, diabetic heart failure, diabetic coronary microvascular heart disorders, peripheral and cardial vascular disorders, thromboembolic disorders and ischaemias, peripheral circulatory disturbances, Raynaud's phenomenon, CREST syndrome, microcirculatory disturbances, intermittent claudication, and peripheral and autonomous neuropathies.Type: GrantFiled: December 19, 2017Date of Patent: June 18, 2019Assignee: BAYER PHARMA AKTIENGESELLSCHAFTInventors: Eva Maria Becker-Pelster, Philipp Buchgraber, Anja Buchmüller, Karen Engel, Volker Geiss, Andreas Göller, Herbert Himmel, Raimund Kast, Andreas Knorr, Dieter Lang, Gorden Redlich, Carsten Schmeck, Hanna Tinel, Frank Wunder
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Patent number: 10304833Abstract: A device includes a first nano-sheet of a first semiconductor material. First source/drain regions are positioned adjacent ends of the first nano-sheet. A first dielectric material is positioned above the first source/drain regions. A second nano-sheet of a second semiconductor material is positioned above the first nano-sheet. Second source/drain regions are positioned adjacent ends of the second nano-sheet and above the first dielectric material. A gate structure has a first portion capacitively coupled to the first nano-sheet and a second portion capacitively coupled to the second nano-sheet. A first source/drain contact contacts a first portion of the second source/drain regions in a first region where the first and second source/drain regions do not vertically overlap. The first source/drain contact has a first depth that extends below a height of an upper surface of the first source/drain regions in a second region where the first and second source/drain regions vertically overlap.Type: GrantFiled: February 19, 2018Date of Patent: May 28, 2019Assignee: GLOBALFOUNDRIES Inc.Inventors: Puneet Harischandra Suvarna, Bipul C. Paul, Ruilong Xie, Bartlomiej Jan Pawlak, Lars W. Liebmann, Daniel Chanemougame, Nicholas V. LiCausi, Andreas Knorr
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Patent number: 10290549Abstract: The disclosure is directed to gate all-around integrated circuit structures, finFETs having a dielectric isolation, and methods of forming the same. The gate all-around integrated circuit structure may include a first insulator region within a substrate; a pair of remnant liner stubs disposed within the first insulator region; a second insulator region laterally adjacent to the first insulator region within the substrate; a pair of fins over the first insulator region, each fin in the pair of fins including an inner sidewall facing the inner sidewall of an adjacent fin in the pair of fins and an outer sidewall opposite the inner sidewall; and a gate structure substantially surrounding an axial portion of the pair of fins and at least partially disposed over the first and second insulator regions, wherein each remnant liner stub is substantially aligned with the inner sidewall of a respective fin of the pair of fins.Type: GrantFiled: September 5, 2017Date of Patent: May 14, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Ruilong Xie, Julien Frougier, Min Gyu Sung, Edward Joseph Nowak, Nigel G. Cave, Lars Liebmann, Daniel Chanemougame, Andreas Knorr
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Publication number: 20190123160Abstract: A method of forming a GAA FinFET, including: forming a fin on a substrate, the substrate having a STI layer formed thereon and around a portion of a FIN-bottom portion of the fin, the fin having a dummy gate formed thereover, the dummy gate having a gate sidewall spacer on sidewalls thereof; forming a FIN-void and an under-FIN cavity in the STI layer; forming first spacers by filling the under-FIN cavity and FIN-void with a first fill; removing the dummy gate, thereby exposing both FIN-bottom and FIN-top portions of the fin underneath the gate; creating an open area underneath the exposed FIN-top by removing the exposed FIN-bottom; and forming a second spacer by filling the open area with a second fill; wherein a distance separates a top-most surface of the second spacer from a bottom-most surface of the FIN-top portion. A GAA FinFET formed by the method is also disclosed.Type: ApplicationFiled: November 14, 2018Publication date: April 25, 2019Inventors: Ruilong Xie, Andreas Knorr, Julien Frougier, Hui Zang, Min-hwa Chi
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Patent number: 10259776Abstract: The present application relates to novel 3-phenylpropionic acid derivatives which carry a branched or cyclic alkyl substituent in the 3-position, to processes for their preparation, to their use for the treatment and/or prevention of diseases and to their use for preparing medicaments for the treatment and/or prevention of diseases, in particular for the treatment and/or prevention of cardiovascular diseases.Type: GrantFiled: June 6, 2018Date of Patent: April 16, 2019Assignee: Bayer Intellectual Property GmbHInventors: Michael Hahn, Thomas Lampe, Johannes-Peter Stasch, Karl-Heinz Schlemmer, Frank Wunder, Volkhart Min-Jian Li, Eva-Maria Becker-Pelster, Friederike Stoll, Andreas Knorr, Elisabeth Woltering
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Publication number: 20190074224Abstract: The disclosure is directed to gate all-around integrated circuit structures, finFETs having a dielectric isolation, and methods of forming the same. The gate all-around integrated circuit structure may include a first insulator region within a substrate; a pair of remnant liner stubs disposed within the first insulator region; a second insulator region laterally adjacent to the first insulator region within the substrate; a pair of fins over the first insulator region, each fin in the pair of fins including an inner sidewall facing the inner sidewall of an adjacent fin in the pair of fins and an outer sidewall opposite the inner sidewall; and a gate structure substantially surrounding an axial portion of the pair of fins and at least partially disposed over the first and second insulator regions, wherein each remnant liner stub is substantially aligned with the inner sidewall of a respective fin of the pair of fins.Type: ApplicationFiled: September 5, 2017Publication date: March 7, 2019Inventors: Ruilong Xie, Julien Frougier, Min Gyu Sung, Edward Joseph Nowak, Nigel G. Cave, Lars Liebmann, Daniel Chanemougame, Andreas Knorr
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Patent number: 10189856Abstract: The use of sGC stimulators, sGC activators alone, or in combination with PDE5 inhibitors for the prevention and treatment of fibrotic diseases, such as systemic sclerosis, scleroderma, and the concomitant fibrosis of internal organs.Type: GrantFiled: May 24, 2011Date of Patent: January 29, 2019Assignee: Adverio Pharma GMBHInventors: Claudia Hirth-Dietrich, Peter Sandner, Johannes-Peter Stasch, Andreas Knorr, Georges Von Degenfeld, Michael Hahn, Markus Follmann
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Patent number: 10164041Abstract: A method of forming a GAA FinFET, including: forming a fin on a substrate, the substrate having a STI layer formed thereon and around a portion of a FIN-bottom portion of the fin, the fin having a dummy gate formed thereover, the dummy gate having a gate sidewall spacer on sidewalls thereof; forming a FIN-void and an under-FIN cavity in the STI layer; forming first spacers by filling the under-FIN cavity and FIN-void with a first fill; removing the dummy gate, thereby exposing both FIN-bottom and FIN-top portions of the fin underneath the gate; creating an open area underneath the exposed FIN-top by removing the exposed FIN-bottom; and forming a second spacer by filling the open area with a second fill; wherein a distance separates a top-most surface of the second spacer from a bottom-most surface of the FIN-top portion. A GAA FinFET formed by the method is also disclosed.Type: GrantFiled: October 23, 2017Date of Patent: December 25, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Ruilong Xie, Andreas Knorr, Julien Frougier, Hui Zang, Min-hwa Chi
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Publication number: 20180319794Abstract: The present application relates to novel substituted imidazo[1,2-a]pyridine-3-carboxamides, to processes for their preparation, to their use alone or in combinations for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, in particular for the treatment and/or prophylaxis of cardiovascular disorders.Type: ApplicationFiled: July 2, 2018Publication date: November 8, 2018Applicant: BAYER PHARMA AKTIENGESELLSCHAFTInventors: Alexandros VAKALOPOULOS, Markus FOLLMAN, Ingo HARTUNG, Philipp BUCHGRABER, Rolf JAUTELAT, Jorma HAßFELD, Niels LINDNER, Alexey GROMOV, Frank WUNDER, Johannes-Peter STASCH, Gorden REDLICH, Volkhart Min-Jian LI, Eva Maria BECKER-PELSTER, Andreas KNORR
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Publication number: 20180282262Abstract: The present application relates to novel 3-phenylpropionic acid derivatives which carry a branched or cyclic alkyl substituent in the 3-position, to processes for their preparation, to their use for the treatment and/or prevention of diseases and to their use for preparing medicaments for the treatment and/or prevention of diseases, in particular for the treatment and/or prevention of cardiovascular diseases.Type: ApplicationFiled: June 6, 2018Publication date: October 4, 2018Applicant: BAYER INTELLECTUAL PROPERTY GMBHInventors: Michael HAHN, Thomas LAMPE, Johannes-Peter STASCH, Karl-Heinz SCHLEMMER, Frank WUNDER, Volkhart Min-Jian LI, Eva-Maria BECKER-PELSTER, Friederike STOLL, Andreas KNORR, Elisabeth WOLTERING
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Publication number: 20180263981Abstract: The present application relates to novel substituted 5-fluoro-1H-pyrazolopyridines, to processes for their preparation, to their use alone or in combinations for the treatment and/or prophylaxis of diseases, and to their use for producing medicaments for the treatment and/or prophylaxis of diseases, in particular for the treatment and/or prophylaxis of cardiovascular disorders.Type: ApplicationFiled: May 16, 2018Publication date: September 20, 2018Applicant: ADVERIO PHARMA GMBHInventors: Markus FOLLMANN, Johannes-Peter STASCH, Gorden REDLICH, Jens ACKERSTAFF, Nils GRIEBENOW, Walter KROH, Andreas KNORR, Eva-Maria BECKER, Frank WUNDER, Volkhart Min-Jian LI, Elke HARTMANN, Joachim MITTENDORF, Karl-Heinz SCHLEMMER, Rolf JAUTELAT, Donald BIERER
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Patent number: 10062617Abstract: A method of forming SRB finFET fins first with a cut mask that is perpendicular to the subsequent fin direction and then with a cut mask that is parallel to the fin direction and the resulting device are provided. Embodiments include forming a SiGe SRB on a substrate; forming a Si layer over the SRB; forming an NFET channel and a SiGe PFET channel in the Si layer; forming cuts through the NFET and PFET channels, respectively, and the SRB down to the substrate, the cuts formed on opposite ends of the substrate and perpendicular to the NFET and PFET channels; forming fins in the SRB and the NFET and PFET channels, the fins formed perpendicular to the cuts; forming a cut between the NFET and PFET channels, the cut formed parallel to the fins; filling the cut with oxide; and recessing the oxide down to the SRB.Type: GrantFiled: December 9, 2016Date of Patent: August 28, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Ruilong Xie, Murat Kerem Akarvardar, Andreas Knorr