Abstract: A transistor includes a trench formed in a semiconductor body, the trench having sidewalls and a bottom. The transistor further includes a first semiconductor material disposed in the trench adjacent the sidewalls and a second semiconductor material disposed in the trench and spaced apart from the sidewalls by the first semiconductor material. The second semiconductor material has a different band gap than the first semiconductor material. The transistor also includes a gate material disposed in the trench and spaced apart from the first semiconductor material by the second semiconductor material. The gate material provides a gate of the transistor. Source and drain regions are arranged in the trench with a channel interposed between the source and drain regions in the first or second semiconductor material so that the channel has a lateral current flow direction along the sidewalls of the trench.

Abstract: A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first surface. The body region is also arranged between the source region and the drift region. The vertical transistor component further includes a gate electrode arranged adjacent to the body zone, a gate dielectric arranged between the gate electrode and the body region, and a drain region arranged between the drift region and the second surface. A source electrode electrically contacts the source region, is electrically insulated from the gate electrode and arranged on the first surface. A drain electrode electrically contacts the drain region and is arranged on the second surface. A gate contact electrode is electrically insulated from the semiconductor body, extends in the semiconductor body to the second surface, and is electrically connected with the gate electrode.

Abstract: An apparatus for providing communications between a first device disposed at a tubular and a second device, the tubular having tubular sections and being configured to be disposed in a borehole penetrating the earth, the apparatus including: a first optical coupler configured to be coupled to a first tubular section and configured to be in optical communication with the first device using a first optical transmission medium disposed at the first tubular section; and a second optical coupler configured to be coupled to a second tubular section and configured to be in optical communication with the second device using a second optical transmission medium disposed at the second tubular section; wherein the first optical coupler is configured to be perimetrically disposed about the second optical coupler to be in communication with the second optical coupler to provide the communications between the first device and the second device.

Abstract: A shaving unit for an electric shaver which comprises an outer cutter and an inner cutter associated to that outer cutter. The cutters are mounted so as to be movable relative to each other and adapted to be set in a relative motion by a drive mechanism. The inner cutter provides a plurality of cutting edges and abuts with its outer face on the inner face of the outer cutter. The outer cutter provides a plurality of teeth equipped with cutting edges. The outer cutter provides two comb elements which are disposed opposite one another and which extend according to the direction of the relative motion. The two comb elements are aligned with respect to one another such that the tips of the teeth of the first comb element are facing the tips of the teeth of the second comb element, the tips of the teeth spaced from one another.

Abstract: A vertical transistor component is produced by providing a semiconductor body with a first surface and a second surface, producing at least one gate contact electrode in a trench, the trench extending from the first surface through the semiconductor body to the second surface, and producing at least one gate electrode connected to the at least one gate contact electrode in the region of the first surface.

Abstract: An apparatus for measuring strain on a downhole component includes: at least one strain sensitive device disposed proximate to a surface of a component of a drilling assembly or disposed within a material forming the component; and a processor in operable communication with the at least one strain sensitive device, the processor configured to detect changes in the at least one strain sensitive device and detect at least one of erosion, crack formation and crack propagation in the component surface. An apparatus for measuring strain on a downhole component includes: at least one strain gauge deposited on a surface of a drive shaft or disposed within a material forming the drive shaft; and a processor in operable communication with the at least one strain gauge, the processor configured to detect changes in the at least one strain gauge and detect conditions affecting operation of the drive shaft.

Abstract: A method of coupling segments of a borehole conduit is disclosed. The method includes: positioning a first conduit segment at a location selected from a surface location and a downhole location, the first conduit segment having a first end and a second end, the first conduit segment including a pin connector at the first end; orienting the first conduit segment so that the first end is located uphole relative to the second end; and coupling a second conduit segment in operable communication with the first conduit segment, the second conduit segment having a box connector at an end of the second conduit segment that is configured to engage the pin connector of the first segment.

Abstract: This invention relates to novel photochromic and electrochromic monomers and polymers based on 1,2-dithienylcyclopentene derivatives and method of using and synthesizing same. The compounds are reversibly interconvertible between different isomeric forms under suitable photochromic or electrochromic conditions. The electrochromic conversion may be catalytic. The application also relates to ultra-high density homopolymers prepared using ring-opening methathesis polymerization (ROMP) where the central ring of the 1,2-bis(3-thienyl)-cyclopentene is incorporated directly into the polymer backbone. The monomer units may be readily functionalized to enable the synthesis of polymers with diverse structural and electronic properties.

Abstract: A method for preventing a downhole tool from getting stuck in a wellbore, includes: monitoring output of at least one friction sensor mounted on an external surface of the downhole tool; and if the output indicates a high friction condition, then reducing the friction to prevent the tool from getting stuck. A tool and a computer program product are provided.

Abstract: According to an embodiment, a method of forming a semiconductor device includes: providing a wafer having a semiconductor substrate with a first side a second side opposite the first side, and a dielectric region arranged on the first side; mounting the wafer with the first side on a carrier system; etching a deep vertical trench from the second side through the semiconductor substrate to the dielectric region, thereby insulating a mesa region from the remaining semiconductor substrate; and filling the deep vertical trench with a dielectric material.

Abstract: A semiconductor device includes a semiconductor body having a first surface and a second surface, at least one electrode arranged in at least one trench extending from the first surface into the semiconductor body, and a semiconductor via extending in a vertical direction of the semiconductor body within the semiconductor body to the second surface. The semiconductor via is electrically insulated from the semiconductor body by a via insulation layer. The at least one electrode extends in a first lateral direction of the semiconductor body through the via insulation layer and is electrically connected to the semiconductor via.

Abstract: A carpet centrifuge with external placement for industrial cleaning of carpets and other large textile articles.

Abstract: A method and system is presented which provides a TDM framework for managing self-describing measurement data. The TDM framework provides applications with a central platform for accessing measurement data across an entire enterprise system. By means of individual plug-ins, which may be specific to a given data file format, meta-data for each data store in the enterprise may be indexed in a unified manner. The unified indexing, in turn, provides the ability to browse and query the indexed measurement data without requiring the opening or reading from a source data file.

Abstract: A semiconductor arrangement includes a first and second controllable vertical n-channel semiconductor chip. Each of the controllable vertical n-channel semiconductor chips has a front side, a rear side opposite the front side, a front side main contact arranged on the front side, a rear side main contact arranged on the rear side, and a gate contact arranged on the front side for controlling an electric current between the front side main contact and the rear side main contact. The rear side contacts of the first and second semiconductor chips are electrically connected to one another.

Abstract: An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first conductivity type. The first semiconductor zone extends to a surface of the semiconductor body. A second semiconductor zone of the first conductivity type is embedded in the first semiconductor zone and extends as far as the surface. A third semiconductor zone of the second conductivity type at least partly projects from the first semiconductor zone along a lateral direction running parallel to the surface. A contact structure provides an electrical contact with the first and second semiconductor zones at the surface. The second semiconductor zone is arranged, along the lateral direction, between the part of the third semiconductor zone which projects from the first semiconductor zone and a part of the contact structure in contact with the first semiconductor zone.

Abstract: A package for absorbent articles, such as disposable diapers, training pants and adult incontinence undergarments more resistant to deformation.

Abstract: A package for disposable diapers having a portion of the package usable as a baby changing mat.

Abstract: A method for producing a semiconductor device with a dielectric layer includes: providing a semiconductor body with a first trench extending into the semiconductor body, the first trench having a bottom and a sidewall; forming a first dielectric layer on the sidewall in a lower portion of the first trench; forming a first plug in the lower portion of the first trench so as to cover the first dielectric layer, the first plug leaving an upper portion of the sidewall uncovered; forming a sacrificial layer on the sidewall in the upper portion of the first trench; forming a second plug in the upper portion of the first trench; removing the sacrificial layer, so as to form a second trench having sidewalls and a bottom; and forming a second dielectric layer in the second trench and extending to the first dielectric layer.

Abstract: A gas turbine, comprising a turbine and a compressor provided with a compressor housing, and to a method for the operation thereof. The compressor is tapped in order to cool the turbine by means of at least one tap line for removing compressed or partially compressed air. The tap line comprises a locking device, particularly a valve, in order to regulate the outflow of tapped air and thus the cooling of the housing.

Abstract: Disclosed is an electronic circuit. The electronic circuit includes a transistor having a control terminal to receive a drive signal, and a load path between a first and a second load terminal. A voltage protection circuit is coupled to the transistor, has a control input, is configured to assume one of an activated state and a deactivated state as an operation state dependent on a control signal received at the control input, and is configured to limit a voltage between the load terminals or between one of the load terminals and the control terminal. A control circuit is coupled to the control input of the voltage protection circuit and is configured to deactivate the voltage protection circuit dependent on at least one operation parameter of the transistor and when a voltage across the load path or a load current through the load path is other than zero.