Abstract: A semiconductor device includes a semiconductor body having a first surface and a second surface, at least one electrode arranged in at least one trench extending from the first surface into the semiconductor body, and a semiconductor via extending in a vertical direction of the semiconductor body within the semiconductor body to the second surface. The semiconductor via is electrically insulated from the semiconductor body by a via insulation layer. The at least one electrode extends in a first lateral direction of the semiconductor body through the via insulation layer and is electrically connected to the semiconductor via.

Abstract: A carpet centrifuge with external placement for industrial cleaning of carpets and other large textile articles.

Abstract: A method and system is presented which provides a TDM framework for managing self-describing measurement data. The TDM framework provides applications with a central platform for accessing measurement data across an entire enterprise system. By means of individual plug-ins, which may be specific to a given data file format, meta-data for each data store in the enterprise may be indexed in a unified manner. The unified indexing, in turn, provides the ability to browse and query the indexed measurement data without requiring the opening or reading from a source data file.

Abstract: A semiconductor arrangement includes a first and second controllable vertical n-channel semiconductor chip. Each of the controllable vertical n-channel semiconductor chips has a front side, a rear side opposite the front side, a front side main contact arranged on the front side, a rear side main contact arranged on the rear side, and a gate contact arranged on the front side for controlling an electric current between the front side main contact and the rear side main contact. The rear side contacts of the first and second semiconductor chips are electrically connected to one another.

Abstract: An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first conductivity type. The first semiconductor zone extends to a surface of the semiconductor body. A second semiconductor zone of the first conductivity type is embedded in the first semiconductor zone and extends as far as the surface. A third semiconductor zone of the second conductivity type at least partly projects from the first semiconductor zone along a lateral direction running parallel to the surface. A contact structure provides an electrical contact with the first and second semiconductor zones at the surface. The second semiconductor zone is arranged, along the lateral direction, between the part of the third semiconductor zone which projects from the first semiconductor zone and a part of the contact structure in contact with the first semiconductor zone.

Abstract: A package for disposable diapers having a portion of the package usable as a baby changing mat.

Abstract: A package for absorbent articles, such as disposable diapers, training pants and adult incontinence undergarments more resistant to deformation.

Abstract: A method for producing a semiconductor device with a dielectric layer includes: providing a semiconductor body with a first trench extending into the semiconductor body, the first trench having a bottom and a sidewall; forming a first dielectric layer on the sidewall in a lower portion of the first trench; forming a first plug in the lower portion of the first trench so as to cover the first dielectric layer, the first plug leaving an upper portion of the sidewall uncovered; forming a sacrificial layer on the sidewall in the upper portion of the first trench; forming a second plug in the upper portion of the first trench; removing the sacrificial layer, so as to form a second trench having sidewalls and a bottom; and forming a second dielectric layer in the second trench and extending to the first dielectric layer.

Abstract: A gas turbine, comprising a turbine and a compressor provided with a compressor housing, and to a method for the operation thereof. The compressor is tapped in order to cool the turbine by means of at least one tap line for removing compressed or partially compressed air. The tap line comprises a locking device, particularly a valve, in order to regulate the outflow of tapped air and thus the cooling of the housing.

Abstract: Disclosed is an electronic circuit. The electronic circuit includes a transistor having a control terminal to receive a drive signal, and a load path between a first and a second load terminal. A voltage protection circuit is coupled to the transistor, has a control input, is configured to assume one of an activated state and a deactivated state as an operation state dependent on a control signal received at the control input, and is configured to limit a voltage between the load terminals or between one of the load terminals and the control terminal. A control circuit is coupled to the control input of the voltage protection circuit and is configured to deactivate the voltage protection circuit dependent on at least one operation parameter of the transistor and when a voltage across the load path or a load current through the load path is other than zero.

Abstract: A transistor includes a trench formed in a semiconductor body, the trench having sidewalls and a bottom. The transistor further includes a first semiconductor material disposed in the trench adjacent the sidewalls and a second semiconductor material disposed in the trench and spaced apart from the sidewalls by the first semiconductor material. The second semiconductor material has a different band gap than the first semiconductor material. The transistor also includes a gate material disposed in the trench and spaced apart from the first semiconductor material by the second semiconductor material. The gate material provides a gate of the transistor. Source and drain regions are arranged in the trench with a channel interposed between the source and drain regions in the first or second semiconductor material so that the channel has a lateral current flow direction along the sidewalls of the trench.

Abstract: A transistor includes a trench formed in a semiconductor body, the trench having sidewalls and a bottom. The transistor further includes a first semiconductor material disposed in the trench adjacent the sidewalls and a second semiconductor material disposed in the trench and spaced apart from the sidewalls by the first semiconductor material. The second semiconductor material has a different band gap than the first semiconductor material. The transistor also includes a gate material disposed in the trench and spaced apart from the first semiconductor material by the second semiconductor material. The gate material provides a gate of the transistor. Source and drain regions are arranged in the trench with a channel interposed between the source and drain regions in the first or second semiconductor material so that the channel has a lateral current flow direction along the sidewalls of the trench.

Abstract: A multi-presentational package for disposable diapers such that the package may be presented in a multi-package form or an individual-package form. One exemplary embodiment of the package may include a plurality of disposable diaper products, a plurality of stabilizers, and a wrapping layer. The multi-presentational package may be marketed as a single unit such that a substantial portion of said plurality of disposable diaper products is visible to the consumer and/or the plurality of disposable diaper products and plurality of stabilizers may be removed from said multi-presentation package and subsequently marketable as multiple units.

Abstract: A multi-channel coil array for use as a transceiver in magnetic resonance imaging (MRI) has a plurality of radio frequency (RF) coils disposed next to one another, devices for electromagnetically decoupling the RF coils and coil elements which are applied onto a planar carrier element (5). The carrier elements (5) have a regular, equilateral polygonal outer contour and the shape of the individual coils (2) corresponds to the outer contour of the carrier element (5). An individual coil (2) has a loop-shaped structure (1), which leads to a decoupling of individual coils (2) not immediately adjacent to each other when a plurality of individual elements are arranged. The space requirement for adding new coils is reduced, and the modular design makes it possible to easily implement any three-dimensional or two-dimensional shape.

Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate having a main horizontal surface, an opposite surface and a completely embedded dielectric region. A deep vertical trench is etched from the main horizontal surface into the semiconductor substrate using the dielectric region as an etch stop. A vertical transistor structure is formed in the semiconductor substrate. A first metallization in ohmic contact with the transistor structure is formed on the main horizontal surface. The semiconductor substrate is thinned at the opposite surface at least close to the dielectric region. Further, a semiconductor device is provided.

Abstract: An anchoring system for use with a downhole tool includes a body with anchor members mounted on the body that pivot radially outward from the body and into engagement with an inner surface of a tubular. Curved slots are provided along a portion of the members and a sliding block has a protrusion that projects into the slots. The slots are curved so that when the block is urged axially within the body, the interaction between the slots and protrusions pivots the members radially outward. A piston is urged through the body to drive the block. Optionally, an elongate helical gear may cooperate with grooves formed in an edge of the members so that rotating the gear pivots the members radially outward.

Abstract: An apparatus for controlling flow of a fluid includes a closure member, a biasing member applying a biasing force to the closure member, and a sealing member receiving the closure member. A dampener is operatively connected to the closure member and may resist a force applied to the closure member. A fluid seal may be formed when the biasing member presses the closure member against the sealing member. The apparatus may include a wellbore tubular in which the fluid conduit is formed and the closure member and sealing member may cooperate to control fluid flow along the fluid conduit. The apparatus may include an actuator configured to control the force applied to the closure member. The actuator may adjust the biasing force, and/or the dampening force. Also, a controller may control the actuator and may be responsive to a signal generated at a surface location, a signal generated at a downhole location, and/or a signal generated by a sensor.

Abstract: According to one embodiment, a die package is provided comprising a first die structure with a first plurality of switching elements wherein controlled current input terminals of the first plurality of switching elements are electrically coupled by a common contact region and wherein controlled current output terminals of the first plurality of switching elements are insulated from each other; a second die structure with a second plurality of switching elements wherein controlled current output terminals of the second plurality of switching elements are coupled by a common contact region and wherein controlled current input terminals of the second plurality of switching elements are insulated from each other; and wherein, for each of the first plurality of switching elements, the output terminal of the switching element is coupled with the input terminal of at least one switching element of the second plurality of switching elements.

Abstract: A method for producing a semiconductor component includes providing a semiconductor body with a first surface and a second surface opposite the first surface, forming an insulation trench which extends into the semiconductor body from the first surface and which in a horizontal plane of the semiconductor body has a geometry such that the insulation trench defines a via region of the semiconductor body, forming a first insulation layer on one or more sidewalls of the insulation trench, removing semiconductor material of the semiconductor body from the second surface to expose at least parts of the first insulation layer, to remove at least parts of the first insulation layer, or to leave at least partially a semiconductor layer with a thickness of less than 1 ?m between the first insulation layer and the second surface, and forming first and second contact electrodes on the via region.

Abstract: A method for producing a semiconductor component is provided. The method includes providing a semiconductor body with a first surface and a second surface opposite to the first surface, etching an insulation trench from the first surface partially into the semiconductor body, forming a first insulation layer on one or more sidewalls of the insulation trench, processing the second surface by at least one of grinding, polishing and a CMP-process to expose the first insulation layer, and depositing on the processed second surface a second insulation layer which extends to the first insulation layer.