Patents by Inventor Andreas Weimar

Andreas Weimar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10431715
    Abstract: A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200° C., and wherein the following applies: c11?c25 and c11?c13?c12.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: October 1, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Barbara Behr, Andreas Weimar, Mathias Wendt, Marcus Zenger
  • Patent number: 10424565
    Abstract: A semiconductor chip, an optoelectronic device including a semiconductor chip, and a method for producing a semiconductor chip are disclosed. In an embodiment the chip includes a semiconductor body with a first main surface and a second main surface arranged opposite to the first main surface, wherein the semiconductor body includes a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface and a metallic contact element that extends from the first main surface to the second main surface and that is electrically isolated from one of the sub-regions.
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: September 24, 2019
    Assignee: OSRAM Opto Semiconductor GmbH
    Inventors: Andreas Weimar, Frank Singer, Anna Kasprzak-Zablocka, Sabine vom Dorp
  • Patent number: 10392506
    Abstract: The invention relates to compositions consisting of A) 70 to 90 parts by weight of at least one polycarbonate, B) 10 to 30 parts by weight of at least one graft polymer containing a rubber-elastic particulate graft base, which contains diene, and containing a vinyl co(polymer) shell, C) 0 to 15 parts by weight of at least one additive, wherein the sum of the parts by weight of components A) and B) in the composition is normalized to 100. The invention further relates to the use of the compositions to produce components containing a plastic carrier and a multi-ply metal layer, and to molded bodies produced from the compositions.
    Type: Grant
    Filed: July 4, 2016
    Date of Patent: August 27, 2019
    Assignee: Covestro Deutschland AG
    Inventors: Andreas Seidel, Wolfgang Schwartmann, Eckhard Wenz, Peter Weimar
  • Publication number: 20190214525
    Abstract: A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200° C., and wherein the following applies: c11?c25 and c11 ?c13?c12.
    Type: Application
    Filed: August 23, 2016
    Publication date: July 11, 2019
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Barbara Behr, Andreas Weimar, Mathias Wendt, Marcus Zenger
  • Patent number: 9647174
    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates radiation and at least one n-doped layer adjoining the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer of doped or undoped GaN having a thickness of 300 nm to 1.2 ?m is formed at a side of the central layer or one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: May 9, 2017
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Joachim Hertkorn, Karl Engl, Berthold Hahn, Andreas Weimar
  • Publication number: 20170033092
    Abstract: A semiconductor chip, an optoelectronic device including a semiconductor chip, and a method for producing a semiconductor chip are disclosed. In an embodiment the chip includes a semiconductor body with a first main surface and a second main surface arranged opposite to the first main surface, wherein the semiconductor body includes a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface and a metallic contact element that extends from the first main surface to the second main surface and that is electrically isolated from one of the sub-regions.
    Type: Application
    Filed: March 18, 2015
    Publication date: February 2, 2017
    Inventors: Andreas Weimar, Frank Singer, Anna Kasprzak-Zablocka, Sabine vom Dorp
  • Publication number: 20160225952
    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates radiation and at least one n-doped layer adjoining the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer of doped or undoped GaN having a thickness of 300 nm to 1.2 ?m is formed at a side of the central layer or one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places.
    Type: Application
    Filed: April 14, 2016
    Publication date: August 4, 2016
    Inventors: Joachim Hertkorn, Karl Engl, Berthold Hahn, Andreas Weimar
  • Patent number: 9343615
    Abstract: A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: May 17, 2016
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Joachim Hertkorn, Karl Engl, Berthold Hahn, Andreas Weimar
  • Patent number: 9252331
    Abstract: A thin-film LED comprising a barrier layer (3), a first mirror layer (2) succeeding the barrier layer (3), a layer stack (5) succeeding the first mirror layer (2), and at least one contact structure (6) succeeding the layer stack (5). The layer stack (5) has at least one active layer (5a) which emits electromagnetic radiation. The contact structure (6) is arranged on a radiation exit area (4) and has a contact area (7). The first mirror layer (2) has, in a region lying opposite the contact area of the contact structure (6), a cutout which is larger than the contact area (7) of the contact structure (6). The efficiency of the thin-film LED is increased as a result.
    Type: Grant
    Filed: September 4, 2008
    Date of Patent: February 2, 2016
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Berthold Hahn, Andreas Weimar, Johannes Baur, Matthias Sabathil, Glenn-Ives Plaine
  • Patent number: 9224931
    Abstract: A method of producing a component including providing a carrier having a top, an underside, and at least one connection area, applying an optoelectronic component to the top, wherein the optoelectronic component has a contact area facing away from the carrier, applying insulating material to the contact and connection areas, wherein the insulating material is free of foreign particles, applying an insulating layer to exposed places of the insulating material, optoelectronic component and carrier, wherein the insulating layer includes foreign particles in a predefinable concentration, removing the insulating layer in a region above the contact and/or connection areas, to produce openings, removing the insulating material in a region above the contact and connection areas, thereby producing at least two openings in the insulating material, and arranging conductive material on the insulating layer and at least in places in the openings, wherein conductive material conductively connects the contact and connection
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: December 29, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Tobias Gebuhr, Hans-Christoph Gallmeier, Andreas Weimar
  • Publication number: 20140346541
    Abstract: A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer.
    Type: Application
    Filed: August 23, 2012
    Publication date: November 27, 2014
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Joachim Hertkorn, Karl Engl, Berthold Hahn, Andreas Weimar
  • Publication number: 20140342484
    Abstract: A method of producing a semiconductor chip includes providing a silicon growth substrate, producing a III nitride buffer layer on the growth substrate by sputtering, and growing a III nitride semiconductor layer sequence having an active layer above the buffer layer.
    Type: Application
    Filed: August 28, 2012
    Publication date: November 20, 2014
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Joachim Hertkorn, Karl Engl, Berthold Hahn, Andreas Weimar, Peter Stauss
  • Patent number: 8866175
    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The mirror layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: October 21, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Karl Engl, Markus Maute, Andreas Weimar, Lutz Hoeppel, Patrick Rode, Juergen Moosburger, Norwin von Malm
  • Publication number: 20140131739
    Abstract: A method of producing a component including providing a carrier having a top, an underside, and at least one connection area, applying an optoelectronic component to the top, wherein the optoelectronic component has a contact area facing away from the carrier, applying insulating material to the contact and connection areas, wherein the insulating material is free of foreign particles, applying an insulating layer to exposed places of the insulating material, optoelectronic component and carrier, wherein the insulating layer includes foreign particles in a predefinable concentration, removing the insulating layer in a region above the contact and/or connection areas, to produce openings, removing the insulating material in a region above the contact and connection areas, thereby producing at least two openings in the insulating material, and arranging conductive material on the insulating layer and at least in places in the openings, wherein conductive material conductively connects the contact and connection
    Type: Application
    Filed: August 29, 2011
    Publication date: May 15, 2014
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Tobias Gebuhr, Hans-Christoph Gallmeier, Andreas Weimar
  • Patent number: 8710512
    Abstract: An optoelectronic semiconductor chip, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.
    Type: Grant
    Filed: April 24, 2009
    Date of Patent: April 29, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Tony Albrecht, Andreas Weimar, Anna Kasprzak-Zablocka, Christian Eichinger, Kerstin Neveling
  • Patent number: 8648368
    Abstract: An optoelectronic component, includes a carrier, a metallic mirror layer arranged on the carrier, a first passivation layer arranged on a region of the metallic mirror layer, a semiconductor layer that generates an active region during electrical operation arranged on the first passivation layer, a second passivation layer including two regions, wherein the first region is arranged on a top face of the semiconductor layer, and the second region which is free of the semiconductor layer is arranged on the metallic mirror layer, and wherein the first and second regions are separated from one another by a region which surrounds the first passivation layer and which is free of the second passivation layer.
    Type: Grant
    Filed: August 6, 2009
    Date of Patent: February 11, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Andreas Weimar
  • Patent number: 8581279
    Abstract: In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: November 12, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Johannes Baur, Volker Härle, Berthold Hahn, Andreas Weimar, Raimund Oberschmid, Ewald Karl Michael Guenther, Franz Eberhard, Markus Richter, Jörg Strauss
  • Patent number: 8530923
    Abstract: A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 ?m. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: September 10, 2013
    Assignee: OSRAM Opto Semiconductor GmbH
    Inventors: Matthias Sabathil, Lutz Hoeppel, Andreas Weimar, Karl Engl, Johannes Baur
  • Publication number: 20130228819
    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.
    Type: Application
    Filed: August 22, 2011
    Publication date: September 5, 2013
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Karl Engl, Markus Maute, Andreas Weimar, Lutz Hoeppel, Patrick Rode, Juergen Moosburger, Norwin von Malm
  • Patent number: 8526476
    Abstract: A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.
    Type: Grant
    Filed: April 24, 2008
    Date of Patent: September 3, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Karl Engl, Lutz Hoeppel, Christoph Eichler, Matthias Sabathil, Andreas Weimar