Abstract: An electronic component includes a lead frame; a semiconductor chip arranged above the lead frame; and a connection layer sequence arranged between the lead frame and the semiconductor chip, wherein the connection layer sequence includes a first intermetallic layer including gold and indium or gold, indium and tin, a second intermetallic layer including indium and a titanium compound, indium and nickel, indium and platinum or indium and titanium, and a third intermetallic layer including indium and gold.

Abstract: In an embodiment, an adhesive stamp includes a plurality of variable-length stamp bodies arranged in an array, wherein each stamp body has an adhesive surface on a head portion of the stamp body, the adhesive surface configured to hold a semiconductor chip, wherein a first electrode is arranged in the head portion, wherein the first electrode is chargeable and whose polarity is changeable, wherein a second electrode is arranged in a foot portion of the stamp body, wherein the second electrode is chargeable and whose polarity is changeable, wherein a length of the stamp body is variable depending on charges applied to the first electrode and the second electrode, and wherein the adhesive stamp is configured to transfer semiconductor chips.

Abstract: An electronic component includes a lead frame; a semiconductor chip arranged above the lead frame; and a connection layer sequence arranged between the lead frame and the semiconductor chip, wherein the connection layer sequence includes a first intermetallic layer including gold and indium or gold, indium and tin, a second intermetallic layer including indium and a titanium compound, indium and nickel, indium and platinum or indium and titanium, and a third intermetallic layer including indium and gold.

Abstract: A method of attaching a semiconductor chip on a lead frame includes A) providing a semiconductor chip, B) applying a solder metal layer sequence to the semiconductor chip, wherein the solder metal layer sequence includes a first metallic layer including indium or an indium-tin alloy, C) providing a lead frame, D) applying a metallization layer sequence to the lead frame, wherein the metallization layer sequence includes a fourth layer including indium and/or tin arranged above the lead frame and a third layer including gold arranged above the fourth layer, E) forming an intermetallic intermediate layer including gold and indium, gold and tin or gold, tin and indium, G) applying the semiconductor chip to the lead frame via the solder metal layer sequence and the intermetallic intermediate layer, and H) heating the arrangement produced in G) to attach the semiconductor chip to the lead frame.

Abstract: A method of attaching a semiconductor chip on a lead frame includes A) providing a semiconductor chip, B) applying a solder metal layer sequence to the semiconductor chip, wherein the solder metal layer sequence includes a first metallic layer including indium or an indium-tin alloy, C) providing a lead frame, D) applying a metallization layer sequence to the lead frame, wherein the metallization layer sequence includes a fourth layer including indium and/or tin arranged above the lead frame and a third layer including gold arranged above the fourth layer, E) forming an intermetallic intermediate layer including gold and indium, gold and tin or gold, tin and indium, G) applying the semiconductor chip to the lead frame via the solder metal layer sequence and the intermetallic intermediate layer, and H) heating the arrangement produced in G) to attach the semiconductor chip to the lead frame.

Abstract: A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200° C., and wherein the following applies: c11?c25 and c11?c13?c12.

Abstract: A semiconductor chip, an optoelectronic device including a semiconductor chip, and a method for producing a semiconductor chip are disclosed. In an embodiment the chip includes a semiconductor body with a first main surface and a second main surface arranged opposite to the first main surface, wherein the semiconductor body includes a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface and a metallic contact element that extends from the first main surface to the second main surface and that is electrically isolated from one of the sub-regions.

Abstract: A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200° C., and wherein the following applies: c11?c25 and c11 ?c13?c12.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates radiation and at least one n-doped layer adjoining the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer of doped or undoped GaN having a thickness of 300 nm to 1.2 ?m is formed at a side of the central layer or one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places.

Abstract: A semiconductor chip, an optoelectronic device including a semiconductor chip, and a method for producing a semiconductor chip are disclosed. In an embodiment the chip includes a semiconductor body with a first main surface and a second main surface arranged opposite to the first main surface, wherein the semiconductor body includes a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface and a metallic contact element that extends from the first main surface to the second main surface and that is electrically isolated from one of the sub-regions.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates radiation and at least one n-doped layer adjoining the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer of doped or undoped GaN having a thickness of 300 nm to 1.2 ?m is formed at a side of the central layer or one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places.

Abstract: A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer.

Abstract: A thin-film LED comprising a barrier layer (3), a first mirror layer (2) succeeding the barrier layer (3), a layer stack (5) succeeding the first mirror layer (2), and at least one contact structure (6) succeeding the layer stack (5). The layer stack (5) has at least one active layer (5a) which emits electromagnetic radiation. The contact structure (6) is arranged on a radiation exit area (4) and has a contact area (7). The first mirror layer (2) has, in a region lying opposite the contact area of the contact structure (6), a cutout which is larger than the contact area (7) of the contact structure (6). The efficiency of the thin-film LED is increased as a result.

Abstract: A method of producing a component including providing a carrier having a top, an underside, and at least one connection area, applying an optoelectronic component to the top, wherein the optoelectronic component has a contact area facing away from the carrier, applying insulating material to the contact and connection areas, wherein the insulating material is free of foreign particles, applying an insulating layer to exposed places of the insulating material, optoelectronic component and carrier, wherein the insulating layer includes foreign particles in a predefinable concentration, removing the insulating layer in a region above the contact and/or connection areas, to produce openings, removing the insulating material in a region above the contact and connection areas, thereby producing at least two openings in the insulating material, and arranging conductive material on the insulating layer and at least in places in the openings, wherein conductive material conductively connects the contact and connection

Abstract: A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer.

Abstract: A method of producing a semiconductor chip includes providing a silicon growth substrate, producing a III nitride buffer layer on the growth substrate by sputtering, and growing a III nitride semiconductor layer sequence having an active layer above the buffer layer.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The mirror layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.

Abstract: A method of producing a component including providing a carrier having a top, an underside, and at least one connection area, applying an optoelectronic component to the top, wherein the optoelectronic component has a contact area facing away from the carrier, applying insulating material to the contact and connection areas, wherein the insulating material is free of foreign particles, applying an insulating layer to exposed places of the insulating material, optoelectronic component and carrier, wherein the insulating layer includes foreign particles in a predefinable concentration, removing the insulating layer in a region above the contact and/or connection areas, to produce openings, removing the insulating material in a region above the contact and connection areas, thereby producing at least two openings in the insulating material, and arranging conductive material on the insulating layer and at least in places in the openings, wherein conductive material conductively connects the contact and connection

Abstract: An optoelectronic semiconductor chip, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.

Abstract: An optoelectronic component, includes a carrier, a metallic mirror layer arranged on the carrier, a first passivation layer arranged on a region of the metallic mirror layer, a semiconductor layer that generates an active region during electrical operation arranged on the first passivation layer, a second passivation layer including two regions, wherein the first region is arranged on a top face of the semiconductor layer, and the second region which is free of the semiconductor layer is arranged on the metallic mirror layer, and wherein the first and second regions are separated from one another by a region which surrounds the first passivation layer and which is free of the second passivation layer.