Abstract: A nitride-based semiconductor component having a semiconductor body (1) with a contact metalization (4) applied thereon. The semiconductor body (1) is provided with a protective layer which, if appropriate, also covers partial regions of the contact metalization (4) and which has a plurality of recesses (5) arranged near to one another.

Abstract: An ohmic contact structure having a metallization (14) arranged on a semiconductor material (10), a contact layer being formed in the semiconductor material (10), which contact layer has a first partial region adjoining the metallization (14) and a second partial region (18) arranged downstream of the first partial region. The contact layer is doped in such a way that the doping concentration (N2) in the first partial region (12) is greater than the doping concentration (N1) in the second partial region (18).

Abstract: A method for fabricating at least one mesa or ridge structure in a layer or layer sequence, in which a sacrificial layer (4) is applied and patterned above the layer or layer sequence. A mask layer is applied and patterned above the sacrificial layer for definition of the mesa or ridge dimensions. The sacrificial layer (4) and of the layer or layer sequence are removed so that the mesa or ridge structure is formed in the layer or layer sequence. A part of the sacrificial layer (4) is selectively removed from the side areas thereof which have been uncovered in the previous step, so that a sacrificial layer remains which is narrower in comparison with a layer that has remained above the sacrificial layer as seen from the layer or layer sequence. A coating is applied at least to the sidewalls of the structure produced in the previous steps so that the side areas of the residual sacrificial layer are not completely overformed by the coating material.