Abstract: In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).

Abstract: A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 ?m. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.

Abstract: A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.

Abstract: A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).

Abstract: An optoelectronic semiconductor body is provided which has an epitaxial semiconductor layer sequence based on nitride compound semiconductors. The semiconductor layer sequence comprises a buffer layer, which is nominally undoped or at least partially n-conductively doped, an active zone, which is suitable for emitting or receiving electromagnetic radiation, and a contact layer, which is n-conductively doped, arranged between the buffer layer and the active zone. The n-dopant concentration is greater in the contact layer than in the buffer layer. The semiconductor layer sequence contains a recess, which extends through the buffer layer and in which an electrical contact material is arranged and adjoins the contact layer. A method is additionally indicated which is suitable for producing such a semiconductor body.

Abstract: An optoelectronic component, includes a carrier, a metallic mirror layer arranged on the carrier, a first passivation layer arranged on a region of the metallic mirror layer, a semiconductor layer that generates an active region during electrical operation arranged on the first passivation layer, a second passivation layer including two regions, wherein the first region is arranged on a top face of the semiconductor layer, and the second region which is free of the semiconductor layer is arranged on the metallic mirror layer, and wherein the first and second regions are separated from one another by a region which surrounds the first passivation layer and which is free of the second passivation layer.

Abstract: A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 ?m. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.

Abstract: An optoelectronic semiconductor chip is specified, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.

Abstract: A thin-film LED comprising a barrier layer (3), a first mirror layer (2) succeeding the barrier layer (3), a layer stack (5) succeeding the first mirror layer (2), and at least one contact structure (6) succeeding the layer stack (5). The layer stack (5) has at least one active layer (5a) which emits electromagnetic radiation. The contact structure (6) is arranged on a radiation exit area (4) and has a contact area (7). The first mirror layer (2) has, in a region lying opposite the contact area of the contact structure (6), a cutout which is larger than the contact area (7) of the contact structure (6). The efficiency of the thin-film LED is increased as a result.

Abstract: A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.

Abstract: A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.

Abstract: In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).

Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

Abstract: A nitride-based semiconductor component having a semiconductor body (1) with a contact metalization (4) applied thereon. The semiconductor body (1) is provided with a protective layer which, if appropriate, also covers partial regions of the contact metalization (4) and which has a plurality of recesses (5) arranged near to one another.

Abstract: A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).

Abstract: A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.

Abstract: An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).

Abstract: A method for fabricating at least one mesa or ridge structure in a layer or layer sequence, in which a sacrificial layer (4) is applied and patterned above the layer or layer sequence. A mask layer is applied and patterned above the sacrificial layer for definition of the mesa or ridge dimensions. The sacrificial layer (4) and of the layer or layer sequence are removed so that the mesa or ridge structure is formed in the layer or layer sequence. A part of the sacrificial layer (4) is selectively removed from the side areas thereof which have been uncovered in the previous step, so that a sacrificial layer remains which is narrower in comparison with a layer that has remained above the sacrificial layer as seen from the layer or layer sequence. A coating is applied at least to the sidewalls of the structure produced in the previous steps so that the side areas of the residual sacrificial layer are not completely overformed by the coating material.

Abstract: An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).