Abstract: A communication server, computer-readable storage medium and computer-implemented method for executing commands embedded in messages are provided. The method may include detecting user input of a special character while a user is composing a message and in response to detecting the user input of the special character, presenting a selectable list of command operators to the user The method may further include causing a command operator to be included in the message in response to user selection of the command operator from the selectable list of command operators. The command operator is operative to execute an action performed by a network-based service executing on an application server. The method may further include identifying, at an outbound communication serer, the command operator included in the message, and transmitting a request to the application server to perform the action corresponding thereto.

Abstract: Described herein are methods of delivering a nanoparticle across the blood brain barrier to the brain of a subject by administering to the subject a nanoparticle having a nanoparticle core and a targeting agent. A variety of targeting agents may serve to promote delivery of the described nanoparticle.

Abstract: A communication server, computer-readable storage medium, and computer-implemented method for executing commands embedded in messages are provided. The method may include accessing a message that is being routed through a communication server. The message may include a command operator that is operative to execute an action performed by a network-based service executing on an application server. The method may further include identifying the command operator included in the message, and transmitting a request to the application server to perform the action corresponding thereto.

Abstract: A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.

Abstract: A method of fabricating a layer of single crystal III-N material on a silicon substrate includes epitaxially growing a REO template on a silicon substrate. The template includes a REO layer adjacent the substrate with a crystal lattice spacing substantially matching the crystal lattice spacing of the substrate and selected to protect the substrate from nitridation. Either a rare earth oxynitride or a rare earth nitride is formed adjacent the upper surface of the template and a layer of single crystal III-N material is epitaxially grown thereon.

Abstract: The present invention relates to oral immunotherapy for the desensitization of patients who are hypersensitive to peanut allergen. The immunotherapy comprises increasing the oral dose daily dose of peanut protein administered to the patient at intervals of at least 2 weeks in a series of increments from an initial dose to a maximum dose, the series of dose increments including 2 mg, 5 mg, 12.5 mg, 25 mg, 50 mg, 100 mg, 200 mg, 400 mg and 800 mg; administering a daily oral dose of the maximum dose of peanut protein for at least 2 years and then administering a weekly oral dose of the maximum dose of peanut protein for at least 2 years.

Abstract: A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.

Abstract: A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.

Abstract: A heterostructure grown on a silicon substrate includes a single crystal rare earth oxide template positioned on a silicon substrate, the template being substantially crystal lattice matched to the surface of the silicon substrate. A heterostructure is positioned on the template and defines at least one heterojunction at an interface between a III-N layer and a III-III-N layer. The template and the heterostructure are crystal matched to induce an engineered predetermined tensile strain at the at least one heterojunction. A single crystal rare earth oxide dielectric layer is grown on the heterostructure so as to induce an engineered predetermined compressive stress in the single crystal rare earth oxide dielectric layer and a tensile strain in the III-III-N layer. The tensile strain in the III-III-N layer and the compressive stress in the REO layer combining to induce a piezoelectric field leading to higher carrier concentration in 2DEG at the heterojunction.

Abstract: A method of forming a REO dielectric layer and a layer of a-Si between a III-N layer and a silicon substrate. The method includes depositing single crystal REO on the substrate. The single crystal REO has a lattice constant adjacent the substrate matching the lattice constant of the substrate and a lattice constant matching a selected III-N material adjacent an upper surface. A uniform layer of a-Si is formed on the REO. A second layer of REO is deposited on the layer of a-Si with the temperature required for epitaxial growth crystallizing the layer of a-Si and the crystallized silicon being transformed to amorphous silicon after transferring the lattice constant of the selected III-N material of the first layer of REO to the second layer of REO, and a single crystal layer of the selected III-N material deposited on the second layer of REO.

Abstract: A method of growing III-N material on a silicon substrate including the steps of epitaxially growing a buffer layer of REO material on a silicon substrate, epitaxially growing a layer of REN material on the surface of the buffer, and epitaxially growing a thin protective layer of REO on the surface of the REN material layer. The substrate and structure can then be conveniently transferred to another growth machine in which are performed the steps of transforming or modifying in-situ the REO protective layer to a REN layer with a nitrogen treatment and epitaxially growing a layer of III-N material on the modified protective layer.

Abstract: A monolithic integrated radiation detector includes a photodetector and a scintillator deposited directly on the photodetector. Preferably the photodetector is silicon and the scintillator is a rare earth phosphor. The rare earth phosphor is crystal lattice matched to the silicon by a transitional layer epitaxially grown therebetween.

Abstract: A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.

Abstract: A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride.

Abstract: Speckle sensing for motion tracking is described, for example, to track a user's finger or head in an environment to control a graphical user interface, to track a hand-held device, to track digits of a hand for gesture-based control, and to track 3D motion of other objects or parts of objects in a real-world environment. In various examples a stream of images of a speckle pattern from at least one coherent light source illuminating the object, or which is generated by a light source at the object to be tracked, is used to compute an estimate of 3D position of the object. In various examples the estimate is transformed using information about position and/or orientation of the object from another source. In various examples the other source is a time of flight system, a structured light system, a stereo system, a sensor at the object, or other sources.

Abstract: A communication server, computer-readable storage medium, and computer-implemented method for executing commands embedded in messages are provided. The method may include accessing a message that is being routed through a communication server. The message may include a command operator that is operative to execute an action performed by a network-based service executing on an application server. The method may further include identifying the command operator included in the message, and transmitting a request to the application server to perform the action corresponding thereto.

Abstract: Embodiments of low profile distractor apparatuses are disclosed. The distractor apparatuses generally comprise a mounting body, a tensioning mechanism coupled to the mounting body and a distractor arm coupled to the tensioning mechanism and pivotally coupled to the mounting body for rotation relative to the mounting body. The tensioning axis of the tensioning mechanism is non-coaxial with an effector axis of the distractor arm and a distraction force applied with the distractor arm is translated to the effector axis. This enables the distractor apparatus to be positioned relative to a patient such that the tensioning mechanism is offset from the long axis of the limb of the patient thereby facilitating improved access to the distal portions of the limb.

Abstract: The innovations described in this disclosure include distinct differences that create a marketing and sales advantage. For convenience, these features are organized into several innovations, but the features described can be combined and implemented in various ways, both within a given innovation and across two or more innovations. Each innovation is unique in itself. Taken as a whole the innovations establish a demonstration category called “Demo Automation” or “Demonstration automation”. The innovations include, but are not limited to, automated self-configuring video content density and sequence based on personalization responses; automated responsive locked document library; sending a product demo that allows you to see who the recipient shared it with; and product demonstration analytics.

Abstract: III-N material grown on a buffer on a substrate that includes one of a single crystal silicon or a single crystal sapphire. A buffer of single crystal alloy, including one of ErxAl1-xN or (RE1yRE21-y)xAl1-xN, is positioned on the substrate. A layer of single crystal III-N material is positioned on the surface of the buffer and the single crystal alloy has a lattice constant substantially crystal lattice matched to the layer of single crystal III-N material. When the III-N material is GaN, the x in the formula for the alloy varies from less than 1 adjacent the substrate to greater than or equal to 0.249 adjacent the layer of single crystal GaN.

Abstract: Rare earth semiconductor and ferromagnetic material epitaxially grown on a silicon substrate includes a buffer of single crystal epitaxial rare earth/aluminum nitride positioned on a single crystal silicon substrate and a single crystal epitaxial rare earth oxide positioned on the single crystal epitaxial aluminum nitride. A layer of single crystal epitaxial semiconductor and ferromagnetic rare earth nitride is positioned on the buffer. A layer of III-V semiconductive material may be optionally positioned on the rare earth nitride layer.