Abstract: A method for selectively etching a dielectric layer with respect to an epitaxial layer or metal-based hardmask is provided. The method comprises performing a plurality of cycles. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a deposition gas, wherein the deposition gas comprises helium and a hydrofluorocarbon or fluorocarbon, forming the deposition gas into a plasma to effect a fluorinated polymer deposition, and stopping the flow of the deposition gas. The activation phase comprises flowing an activation gas comprising an ion bombardment gas, forming the activation gas into a plasma, providing an activation bias to cause ion bombardment of the fluorinated polymer deposition, wherein the ion bombardment activates fluorine from the fluorinated polymer deposition to etch the dielectric layer, and stopping the flow of the activation gas.

Abstract: Methods of treating a methicillin-resistant Staphylococcus aureus (MRSA) infection or a Staphylococcus pseudintermedius infection in subject in need thereof are provided, the methods comprising administering to the subject an effective amount of a topical gel composition comprising vitamin E d-alpha-tocopherol polyethylene glycol 1000 succinate (TPGS); and at least one lipophile. Compositions, methods of manufacture, and methods of use in inhibiting microbial growth are also provided.

Abstract: Disclosed are systems, apparatus, and methods for managing user reviews of publications within an online user network. Various user interfaces may provide access to view a publication and request a review thereof, solicit and receive reviewing information from the requesting or another user (or multiple users), and provide access to a review generated from the received reviewing information.

Abstract: Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The rare earth oxide layer includes at least two discrete portions (1104, 1004), and the metal layer includes at least one metal portion (1108, 1006) that partially overlaps adjacent discrete portions, preferably forming a bridge over an air gap (1008), particularly suitable for RF filters.

Abstract: The structures and methods disclosed herein include changing composition of a metal alloy layer in an epitaxial electrode material to achieve tunable work functions for the electrode. In one example, the tunable work function is achieved using a layered structure, in which a crystalline rare earth oxide (REO) layer is epitaxially over a substrate or semiconductor, and a metal layer is over the crystalline REO layer. A semiconductor layer is thus in turn epitaxially grown over the metal layer, with a metal alloy layer over the semiconductor layer such that the ratio of constituents in the metal alloy is used to tune the work function of the metal layer.

Abstract: Techniques are disclosed herein for resolving a natural language query. Input (e.g., text input, audio input) corresponding to a query requesting data is received. A type of the query is determined based on a natural language analysis on the query. A form of response to the query is identified based on the type of the query. A visualization associated with the form of response is identified. The visualization is presented via a user interface. The presented visualization includes the requested data.

Abstract: Disclosed are systems, apparatus, and methods for managing user reviews of publications within an online user network. Various user interfaces may provide access to view a publication and request a review thereof, solicit and receive reviewing information from the requesting or another user (or multiple users), and provide access to a review generated from the received reviewing information.

Abstract: Systems and methods describe growing RE-based integrated photonic and electronic layered structures on a single substrate. The layered structure comprises a substrate, an epi-twist rare earth oxide layer over a first region of the substrate, and a rare earth pnictide layer over a second region of the substrate, wherein the first region and the second region are non-overlapping.

Abstract: A device including a hard shield material; a layer including aluminum or copper; and a silicon layer having a first thickness is disclosed. The device can also include a silicon layer having a second thickness. A method of making the device is also disclosed.

Abstract: Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.

Abstract: Systems and methods described herein may include a first semiconductor layer with a first lattice constant, a rare earth pnictide buffer epitaxially grown over the first semiconductor, wherein a first region of the rare earth pnictide buffer adjacent to the first semiconductor has a net strain that is less than 1%, a second semiconductor layer epitaxially grown over the rare earth pnictide buffer, wherein a second region of the rare earth pnictide buffer adjacent to the second semiconductor has a net strain that is a desired strain, and wherein the rare earth pnictide buffer may comprise one or more rare earth elements and one or more Group V elements. In some examples, the desired strain is approximately zero.

Abstract: A printed circuit board (PCB) with at least one mechanical stress relief zone and at least one electrical component zone, wherein the at least one mechanical stress relief zone allows the PCB to flex proximate the at least one mechanical stress relief zone of the PCB without compromising the at least one electrical component zone.

Abstract: Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer. Specifically, the substrate may include a porous portion, which is usually aligned with the metal layer, with or without a rare earth oxide layer in between.

Abstract: The innovations described in this disclosure include distinct differences that create a marketing and sales advantage. For convenience, these features are organized into several innovations, but the features described can be combined and implemented in various ways, both within a given innovation and across two or more innovations. Each innovation is unique in itself. Taken as a whole the innovations establish a demonstration category called “Demo Automation” or “Demonstration automation”. The innovations include, but are not limited to, automated self-configuring video content density and sequence based on personalization responses; automated responsive locked document library; sending a product demo that allows you to see who the recipient shared it with; and product demonstration analytics.

Abstract: Systems and methods are described herein to grow a layered structure. The layered structure comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer has a composite of a first constituent and a second constituent, and has a first ratio between the first constituent and the second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer has a composite of a third constituent and a fourth constituent, and has a second ratio between the third constituent and the fourth constituent, wherein the first ratio and the second ratio are selected such that the first lattice constant is between the second lattice constant and the third lattice constant.

Abstract: Techniques are disclosed herein for resolving a natural language query. Input (e.g., text input, audio input) corresponding to a query requesting data is received. A type of the query is determined based on a natural language analysis on the query. A form of response to the query is identified based on the type of the query. A visualization associated with the form of response is identified. The visualization is presented via a user interface. The presented visualization includes the requested data.

Abstract: A structure can include a III-N layer with a first lattice constant, a first rare earth pnictide layer with a second lattice constant epitaxially grown over the III-N layer, a second rare earth pnictide layer with a third lattice constant epitaxially grown over the first rare earth pnictide layer, and a semiconductor layer with a fourth lattice constant epitaxially grown over the second rare earth pnictide layer. A first difference between the first lattice constant and the second lattice constant and a second difference between the third lattice constant and the fourth lattice constant are less than one percent.

Abstract: Layer structures are described for the formation of Group III-V semiconductor material over Si<110> and Si<100>. Various buffer layers and interfaces reduce the lattice strain between the Group III-V semiconductor material and the Si<110> or Si<100> layers, allowing for the epitaxial formation of high quality Group III-V semiconductor material.

Abstract: A continuous power distribution circuit board containing: i) A printed circuit board; ii) A universal power node; iii) At least one channel on the printed circuit board for passage of current, signal and combinations thereof throughout the board; iv) At least one bridge rectifier in communication with the universal power node for rectifying non-discrete input current to discrete output current; v) At least one capacitor in communication with the at least one bridge rectifier minimizing voltage potential fluctuation from the bridge rectifier; vi) At least one current load in communication with the at least one capacitor; wherein the continuous power distribution circuit board maintains a constant current to the at least one current load without any external current controller.

Abstract: Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.