Abstract: A component for a target material transfer system for a laser-produced plasma radiation source and a method of manufacturing such a component are disclosed. The component, which may, for example, be a target material transfer line, a freeze valve, or a flow restrictor, or some combination of this functionality, is made up of a glass capillary body sealed with glass-to-metal seals at both of its ends to a respective metal fitting. The method of manufacturing involves heating the ends of the glass capillary and then forming them to conform with, and forming a glass-to-metal seal with, the interior contours of the respective channels in each of the metal fittings.

Abstract: A phase change memory bridge cell comprising a dielectric layer located on top of a at least one electrode, wherein a trench is located in the dielectric layer. A first liner located at the bottom of the trench in the dielectric layer and the first liner is located on the sidewalls of the dielectric layer that forms the sidewalls of the trench. A phase change memory material located on top of the first liner, wherein a top surface of the phase change memory material is aligned with a top surface of the dielectric layer, wherein the dielectric layer is located adjacent to and surrounding the vertical sidewalls of the phase change memory material, wherein a top surface of the phase change memory material is flush with a top surface of the dielectric layer.

Abstract: The automated generation of a natural language explanation of what code does. The code is structured to perform tasks because the code itself semantically specifies that those tasks are to be performed. A task-centric representation of the code is automatically generated that includes a task representation of each of some or all of the tasks to be performed as specified by the code. Natural language utterances are then automatically generated by generating a corresponding natural language utterance that semantically describes in natural language the corresponding task represented by the corresponding task representation. Controls are rendered for each natural language utterance that each permit a user to edit the corresponding natural language utterance. After editing, the code itself may be automatically modified or regenerated to reflect the changed natural language utterances.

Abstract: A seal monitoring apparatus is provided. The seal monitoring apparatus includes one or more pressure sensors and a controller in communication with the one or more pressure sensors. The one or more pressure sensors is mounted at a seal of a turbine to measure pressure on a first side of the seal and/or a second side of the seal. The controller is configured to receive pressure data from the one or more pressure sensors and determine a condition of the seal based at least in part on the pressure data. The controller is configured to output a signal upon determining a change in the condition of the seal.

Abstract: A seal monitoring apparatus is provided. The seal monitoring apparatus includes a temperature sensor and a controller in communication with the temperature sensor. The temperature sensor is mounted at a seal of a device. The controller is configured to receive measured temperature data from the temperature sensor and calculate expected temperature data for the seal based at least in part on operating conditions of the device. The controller is configured to determine a condition of the seal based at least in part on a temperature difference of the measured temperature data from the expected temperature data.

Abstract: Disclosed herein are a method and apparatus for automated following behind a lead vehicle. The lead vehicle navigates a path from a starting point to a destination. The lead vehicle and the following vehicle are connected via V2V communication, allowing one or more following vehicles to detect the path taken by the lead vehicle. A computerized control system on the following vehicle (a Follow-the-Leader, or FTL, system) allows the following vehicle to mimic the behavior of the lead vehicle, with the FTL system controlling steering to guide the following vehicle along the path previously navigated by the lead vehicle. In some embodiments, the lead vehicle and following vehicle may both use Global Navigation Satellite System (GNSS) position coordinates. In some embodiments, the following vehicle may also have a system of sensors to maintain a gap between the following and lead vehicles.

Abstract: A phase change memory (PCM) cell includes an electrode, a heater electrically connected to the electrode, a PCM material electrically connected to the heater, a second electrode electrically connected to the PCM material, an electrical insulator surrounding the PCM material, and a shield positioned between the PCM material and the electrical insulator, the shield comprising a reactive-ion-etching-resistant material.

Abstract: A phase change memory (PCM) cell having a mushroom configuration includes a first electrode, a heater electrically connected to the first electrode, a first projection liner electrically connected to the heater, a PCM material electrically connected to the first projection liner, a second electrode electrically connected to the PCM material, and a second projection liner electrically connected to the first projection liner and the second electrode.

Abstract: A semiconductor structure includes a substrate and a first field effect transistor (FET) formed on the substrate; the first FET includes a first FET first source-drain region, a first FET second source-drain region, a first FET gate between the first and second source-drain regions, and a first FET channel region adjacent the first FET gate and between the first FET first and second source-drain regions. Also included is a buried power rail, buried in the substrate, having a top at a level lower than the first FET channel region, and having buried power rail sidewalls. A first FET shared contact is electrically interconnected with the buried power rail and the first FET second source-drain region, and a first FET electrically isolating region is adjacent the buried power rail sidewalls and separates the buried power rail from the substrate.

Abstract: A semiconductor structure includes a heater located in a first layer of a device, wherein the heater is surrounded by a dielectric, a phase change memory (PCM) liner in direct contact with a top surface of the heater in a second layer of the device, a spacer disposed adjacent the PCM liner in the second layer of the device, and a PCM stack disposed above the PCM liner in the second layer of the device.

Abstract: A phase change memory bridge cell comprising a dielectric layer located on top of a at least one electrode, wherein a trench is located in the dielectric layer. A first liner located at the bottom of the trench in the dielectric layer and the first liner is located on the sidewalls of the dielectric layer that forms the sidewalls of the trench. A phase change memory material located on top of the first liner, wherein a top surface of the phase change memory material is aligned with a top surface of the dielectric layer, wherein the dielectric layer is located adjacent to and surrounding the vertical sidewalls of the phase change memory material, wherein a top surface of the phase change memory material is flush with a top surface of the dielectric layer.

Abstract: A phase change memory (PCM) cell includes an electrode, a heater electrically connected to the electrode, a PCM material electrically connected to the heater, a second electrode electrically connected to the PCM material, an electrical insulator surrounding the PCM material, and a shield positioned between the PCM material and the electrical insulator, the shield comprising a reactive-ion-etching-resistant material.

Abstract: A semiconductor structure may include a heater surrounded by a second dielectric layer, a projection liner on top of the second dielectric layer, and a phase change material layer above the projection liner. A top surface of the projection liner may be substantially flush with a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.

Abstract: A semiconductor structure may include a heater surrounded by a dielectric layer, a projection liner on top of the heater, a phase change material layer above the projection liner, and a top electrode contact surrounding a top portion of the phase change material layer, The projection liner may cover a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer and the heater. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The top electrode contact may be separated from the phase change material layer by a metal liner. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.

Abstract: A semiconductor structure may include a heater surrounded by a second dielectric layer. a projection liner on top of the second dielectric layer, and a phase change material layer above the projection liner. A top surface of the projection liner may be substantially flush with a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.

Abstract: A semiconductor structure may include a heater surrounded by a dielectric layer, a projection liner on top of the heater, a phase change material layer above the projection liner, and a top electrode contact surrounding a top portion of the phase change material layer, The projection liner may cover a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer and the heater. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The top electrode contact may be separated from the phase change material layer by a metal liner. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.

Abstract: A method and apparatus are disclosed for preventing injury to an esophagus caused by heat or cold being delivered to the left atrium, the method including altering a heat exchange device from an insertable configuration to a heat exchanging configuration which has an inflated generally flattened cross section (e.g. capsule-shaped, elliptical) corresponding with the cross section of the inside of the esophagus such that the esophagus is maintained in its natural shape and location. In some embodiments the heat exchange device has a heat exchanger which is inflated to be in the heat exchanging configuration.