Abstract: A method and apparatus are disclosed for regulating a temperature of an esophagus when heat or cold is delivered to a left atrium, the method including altering a heat exchange device from an insertable configuration to a heat exchanging configuration which conforms and corresponds with a cross-section of an inside of the esophagus such that the esophagus is maintained in its natural shape and location. In some embodiments the heat exchange device has a heating/cooling balloon which is inflated to be in the heat exchanging configuration. Some alternative embodiments includes altering the configuration of the balloon to conform to or correspond with the cross section of an esophagus by means other than inflation.

Abstract: A semiconductor device includes first and second nanosheet stacks above an upper surface of a semiconductor substrate, a first source/drain on an end of the first nanosheet stack, and a second source/drain on an end of the second nanosheet stack. A first gate stack wraps around individual channels of the first nanosheet stack and a second gate stack wraps around individual channels the second nanosheet stack. An interlayer dielectric covers the first and second nanosheet stacks, the first and second source/drains, and the first and second gate stacks. The semiconductor device further includes a first source/drain contact that contacts the first source/drain and a second source/drain contact that contacts the second source/drain. The first and second source/drain contacts extend continuously from the first and second source/drains, respectively, to an upper surface of the interlayer dielectric.

Abstract: An electrical device includes a first electrode in series with a second electrode. A phase change memory (PCM) is in series with the second electrode. A variable electrical element is in series with the phase change memory.

Abstract: A phase change memory bridge cell comprising a dielectric layer located on top of a at least one electrode, wherein a trench is located in the dielectric layer. A first liner located at the bottom of the trench in the dielectric layer and the first liner is located on the sidewalls of the dielectric layer that forms the sidewalls of the trench. A phase change memory material located on top of the first liner, wherein a top surface of the phase change memory material is aligned with a top surface of the dielectric layer, wherein the dielectric layer is located adjacent to and surrounding the vertical sidewalls of the phase change memory material, wherein a top surface of the phase change memory material is flush with a top surface of the dielectric layer.

Abstract: A phase change memory (PCM) cell includes an electrode, a heater electrically connected to the electrode, a PCM material electrically connected to the heater, a second electrode electrically connected to the PCM material, an electrical insulator surrounding the PCM material, and a shield positioned between the PCM material and the electrical insulator, the shield comprising a reactive-ion-etching-resistant material.

Abstract: A semiconductor structure includes a substrate and a first field effect transistor (FET) formed on the substrate; the first FET includes a first FET first source-drain region, a first FET second source-drain region, a first FET gate between the first and second source-drain regions, and a first FET channel region adjacent the first FET gate and between the first FET first and second source-drain regions. Also included is a buried power rail, buried in the substrate, having a top at a level lower than the first FET channel region, and having buried power rail sidewalls. A first FET shared contact is electrically interconnected with the buried power rail and the first FET second source-drain region, and a first FET electrically isolating region is adjacent the buried power rail sidewalls and separates the buried power rail from the substrate.

Abstract: A phase change memory (PCM) cell having a mushroom configuration includes a first electrode, a heater electrically connected to the first electrode, a first projection liner electrically connected to the heater, a PCM material electrically connected to the first projection liner, a second electrode electrically connected to the PCM material, and a second projection liner electrically connected to the first projection liner and the second electrode.

Abstract: A semiconductor structure includes a heater located in a first layer of a device, wherein the heater is surrounded by a dielectric, a phase change memory (PCM) liner in direct contact with a top surface of the heater in a second layer of the device, a spacer disposed adjacent the PCM liner in the second layer of the device, and a PCM stack disposed above the PCM liner in the second layer of the device.

Abstract: A phase change memory bridge cell comprising a dielectric layer located on top of a at least one electrode, wherein a trench is located in the dielectric layer. A first liner located at the bottom of the trench in the dielectric layer and the first liner is located on the sidewalls of the dielectric layer that forms the sidewalls of the trench. A phase change memory material located on top of the first liner, wherein a top surface of the phase change memory material is aligned with a top surface of the dielectric layer, wherein the dielectric layer is located adjacent to and surrounding the vertical sidewalls of the phase change memory material, wherein a top surface of the phase change memory material is flush with a top surface of the dielectric layer.

Abstract: A phase change memory (PCM) cell includes an electrode, a heater electrically connected to the electrode, a PCM material electrically connected to the heater, a second electrode electrically connected to the PCM material, an electrical insulator surrounding the PCM material, and a shield positioned between the PCM material and the electrical insulator, the shield comprising a reactive-ion-etching-resistant material.

Abstract: A semiconductor structure may include a heater surrounded by a second dielectric layer, a projection liner on top of the second dielectric layer, and a phase change material layer above the projection liner. A top surface of the projection liner may be substantially flush with a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.

Abstract: A semiconductor structure may include a heater surrounded by a dielectric layer, a projection liner on top of the heater, a phase change material layer above the projection liner, and a top electrode contact surrounding a top portion of the phase change material layer, The projection liner may cover a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer and the heater. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The top electrode contact may be separated from the phase change material layer by a metal liner. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.

Abstract: A semiconductor structure may include a heater surrounded by a second dielectric layer. a projection liner on top of the second dielectric layer, and a phase change material layer above the projection liner. A top surface of the projection liner may be substantially flush with a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.

Abstract: A semiconductor structure may include a heater surrounded by a dielectric layer, a projection liner on top of the heater, a phase change material layer above the projection liner, and a top electrode contact surrounding a top portion of the phase change material layer, The projection liner may cover a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer and the heater. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The top electrode contact may be separated from the phase change material layer by a metal liner. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.

Abstract: A method and apparatus are disclosed for preventing injury to an esophagus caused by heat or cold being delivered to the left atrium, the method including altering a heat exchange device from an insertable configuration to a heat exchanging configuration which has an inflated generally flattened cross section (e.g. capsule-shaped, elliptical) corresponding with the cross section of the inside of the esophagus such that the esophagus is maintained in its natural shape and location. In some embodiments the heat exchange device has a heat exchanger which is inflated to be in the heat exchanging configuration.

Abstract: A method of treating one or more medical complications associated with aberrant complement regulatory activity in a subject includes the steps of: providing a pharmaceutical composition comprising a recombinant protein capable of binding to complement factor H (CFH) and inducing increased binding of C3d and C3b by bound CFH compared to unbound CFH; and administering to a subject an effective amount of the pharmaceutical composition.

Abstract: A method and apparatus are disclosed for regulating a temperature of an esophagus when heat or cold is delivered to a left atrium, the method including altering a heat exchange device from an insertable configuration to a heat exchanging configuration which conforms and corresponds with a cross-section of an inside of the esophagus such that the esophagus is maintained in its natural shape and location. In some embodiments the heat exchange device has a heating/cooling balloon which is inflated to be in the heat exchanging configuration. Some alternative embodiments includes altering the configuration of the balloon to conform to or correspond with the cross section of an esophagus by means other than inflation.

Abstract: A method visualizes data sources. A user selects a data source, and the computer system displays a first data visualization according to placement of data fields in shelves of the user interface. The data visualization comprises visual data marks representing the data source. A user selects some of the data marks. In response, the system displays a metric window including a data metric object preview, a summary of the selected data marks, and setting controls. The user provides input to create the data metric object. In response, the system creates the data metric object, including: configuration parameters derived from the first data visualization; an initial extract from the data source according to the configuration parameters; and a schedule for recurring retrieval of data from the data source to update the extract. The system then displays a second data visualization according to the configuration parameters and the extract.

Abstract: A recombinant protein for use in the treatment of one or more medical complications associated with aberrant complement regulatory activity in a subject, the recombinant protein capable of binding to complement factor H (CFH) and inducing increased binding of C3d and C3b by bound CFH compared to unbound CFH.

Abstract: The present invention provides a recombinant protein capable of binding to complement factor H (CFH), and thereby inducing increased binding of C3d and C3b by bound CFH compared to unbound CFH. Methods and medical devices for using utilising the same are also described.