Abstract: A microelectronic structure and a method for fabricating the microelectronic structure use a dielectric layer that is located and formed upon a first conductor layer. An aperture is located through the dielectric layer. The aperture penetrates vertically into the first conductor layer and extends laterally within the first conductor layer beneath the dielectric layer while not reaching the dielectric layer, to form an extended and winged aperture.

Abstract: A microelectronic structure and a method for fabricating the microelectronic structure use a dielectric layer that is located and formed upon a first conductor layer. An aperture is located through the dielectric layer. The aperture penetrates vertically into the first conductor layer and extends laterally within the first conductor layer beneath the dielectric layer while not reaching the dielectric layer, to form an extended and winged aperture. A contiguous via and interconnect may be formed anchored into the extended and winged aperture while using a plating method, absent voids.

Abstract: A scroll compressor has a sealed housing. Within the sealed housing is a first scroll member having a first base and a first generally spiral wrap extending form the first base. A second scroll member has a second base and a second generally spiral wrap extending from the base. The wraps of the first and second scroll members interfit to define compression chambers. A motor drives the second scroll member to orbit relative to the first scroll member. A valve controls the communication of gas between the compression chambers and a discharge pressure chamber. The valve is retained within a valve chamber of the first scroll member. A valve retainer is used to keep the valve within the valve chamber. The valve retainer is attached to the first scroll member by a snap fit connection.

Abstract: An electrochemical gas sensor that includes a wick held in contact with an electrode substrate having at least a working electrode and a counter electrode by a spreader plate. The spreader plate is formed as a planar element that includes a series of perforations to reduce the rigidity of the spreader plate. The perforated spreader plate is held in contact with the wick by a pair of spring arms to bias the wick into contact with the electrodes formed on the substrate.

Abstract: Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a capping layer and a dielectric layer. The dielectric layer is patterned so as to expose the capping layer. The capping layer is then sputter etched to remove the capping layer and expose the metal conductor. In the process of sputter etching, the capping layer is redeposited onto the sidewall of the pattern. Lastly, at least one layer is deposited into the pattern and covers the redeposited capping layer.

Abstract: Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a dielectric layer. The dielectric layer is patterned so as to expose the metal conductor. A liner layer is then deposited into the pattern. The liner layer is then argon sputter etched to remove the liner layer and expose the metal conductor. In the process of argon sputter etching, the liner layer is redeposited onto the sidewall of the pattern. Lastly, an additional layer is deposited into the pattern and covers the redeposited liner layer.

Abstract: Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a capping layer and a dielectric layer. The dielectric layer is patterned so as to expose the capping layer. The capping layer is then sputter etched to remove the capping layer and expose the metal conductor. In the process of sputter etching, the capping layer is redeposited onto the sidewall of the pattern. Lastly, at least one layer is deposited into the pattern and covers the redeposited capping layer.

Abstract: Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a dielectric layer. The dielectric layer is patterned so as to expose the metal conductor. A liner layer is then deposited into the pattern. The liner layer is then argon sputter etched to remove the liner layer and expose the metal conductor. In the process of argon sputter etching, the liner layer is redeposited onto the sidewall of the pattern. Lastly, an additional layer is deposited into the pattern and covers the redeposited liner layer.

Abstract: A uniformly thick oxide film on a substrate is formed by using an anodization apparatus which deposits a blanket precursor film on a surface of a substrate; provides electrical contact to the precursor film; moves the precursor film into contact with an electrolyte solution such that substantially all electrically conductive surfaces, e.g., pin contacts, the substrate edge and a backside of the substrate are electrically isolated from the electrolyte; ensures that the surface of the precursor film on the substrate is in direct contact with the electrolyte solution; and which applies an anodizing current and/or voltage between the precursor film and a counter electrode so as to compensate for a voltage drop resulting from the presence of the electrolyte.

Abstract: The present invention relates to a method and apparatus for ensuring uniform and reproducible heating of a deformation-tolerant substrate during low-pressure chemical vapor deposition (CVD) of a metal film on a surface of the substrate. The uniform and reproducible heating of the substrate is achieved in the present invention by positioning the substrate on a beveled surface of a chamfered ring which is located above the heating element in a CVD reactor chamber. The space between heating element, chamfered ring and bottom surface of the substrate define a cavity between the substrate and heating element that ensures that the substrate is heated by radiative means rather than direct contact.

Abstract: In copper backend integrated circuit technology, advanced technology using low-k organic-based interlayer dielectrics have a problem of carbon contamination that dos not occur in circuits using oxide as dielectric. A composite liner layer for the copper lines uses Ti as the bottom layer, which has the property of gettering carbon and other contaminants. The known problem with Ti of reacting with copper to form a high resistivity compound is avoided by adding a layer of TiN, which isolates the Ti and the copper.

Abstract: A scroll compressor includes a plurality of components which are force-fit together. The components include the separator plate, a pressure relief valve mounted in the separator plate, and a discharge tube. By force-fitting these components, the necessity of welding operations in the interior of the scroll member is eliminated. This will reduce the occurrence of weld splatter, which is undesirable. Further, the assembly of the scroll compressor is simplified by this invention.

Abstract: The present invention relates to a method and apparatus for ensuring uniform and reproducible heating of a deformation-tolerant substrate during low-pressure chemical vapor deposition (CVD) of a metal film on a surface of the substrate. The uniform and reproducible heating of the substrate is achieved in the present invention by positioning the substrate on a beveled surface of a chamfered ring which is located above the heating element in a CVD reactor chamber. The space between heating element, chamfered ring and bottom surface of the substrate define a cavity between the substrate and heating element that ensures that the substrate is heated by radiative means rather than direct contact.

Abstract: Acellular pertussis vaccines comprise purified toxin or toxoid thereof, filamentous haemagglutinin, pertactin and fimbrial agglutinogens formulated to confer protection to at least 70% of members of an at-risk population. The fimbrial agglutinogens may be prepared from a Bordetella strain, particularly a B. pertussis strain, by a multiple step procedure involving extraction of the fimbrial agglutinogens from cell paste and concentrating and purifying the extracted material.

Abstract: A method for forming an open-bottom liner for a conductor in an electronic structure and devices formed are disclosed. In the method, a pre-processed electronic substrate that has a dielectric layer on top is first provided. Via openings are then formed in a dielectric layer to expose an underlying conductive layer. The electronic substrate is then positioned in a cold-wall, low pressure chemical vapor deposition chamber, while the substrate is heated to a temperature of at least 350° C. A precursor gas is then flowed into the CVD chamber to a partial pressure of not higher than 10 mTorr, and metal is deposited from the precursor gas onto sidewalls of the via openings while bottoms of the via openings are substantially uncovered by the metal. The present invention method may be further enhanced by, optionally, modifications of a I-PVD technique or a seed layer deposition technique.

Abstract: A module (10) for a motor vehicle comprising a suspension strut (12) including an outer tubular housing (16) for a hydraulic damper (24) and a spring seat (18); and a steering knuckle (14); wherein the housing, the spring seat and the steering knuckle are formed as an integral one-piece assembly. Reduces assembly complexity, time and cost.

Abstract: A non-orbiting scroll has structure which interfits with the crankcase towers. The crankcase towers are circumferentially spaced by gaps, and the non-orbiting scroll has tabs which extend into those gaps. The crankcase towers preferably fit into grooves in the non-orbiting scroll. The crankcase towers and the grooves on the non-orbiting scroll properly position the non-orbiting scroll and the crankcase relative to each other. The tabs extending into the gaps between the crankcase towers prevent the ingress of welding material into the compressor housing.

Abstract: Acellular pertussis vaccines comprise purified toxin or toxoid thereof, filamentous haemagglutinin, pertactin and fimbrial agglutinogens formulated to confer protection to at least 70% of members of an at-risk population. The fimbrial agglutinogens may be prepared from a Bordetella strain, particularly a B. pertussis strain, by a multiple step procedure involving extraction of the fimbrial agglutinogens from cell paste and concentrating and purifying the extracted material.

Abstract: A cooling structure and a reinforcing structure are described for use with a radio-frequency coil in an ionized physical vapor deposition apparatus. The cooling structure includes a portion for carrying coolant and is proximate to the RF coil along the outer circumference thereof. The cooling structure is shaped relative to the RF coil so that thermal expansion of the RF coil brings the RF coil into close contact with the cooling structure, thereby facilitating heat transfer from the RF coil to the coolant. The reinforcing structure is similarly shaped, and may be integrated with the cooling structure. In addition, the RF coil or cooling/reinforcing structure may be mounted to the wall of the process chamber with telescoping mounting posts, which permit the RF coil to maintain its shape while undergoing thermal expansion. The parasitic inductance of the RF coil leads is reduced by arranging those leads coaxially, thereby minimizing power losses in the RF coil.

Abstract: Improvements are described for a wafer clamp ring used in an IPVD apparatus to provide cooling for the wafer clamp ring, to protect the wafer clamp ring from ion bombardment, and to prevent damage to the wafer. The wafer clamp ring is placed on a cooling fixture when not required for a deposition process. The fixture is annular in shape and in close thermal contact with a circulating coolant and is thereby cooled below ambient temperature. The cooling line and the cooling fixture are fixed relative to the IPVD device, so that problems associated with flexible cooling lines are avoided. An annular grounded shield may be provided between the plasma and clamp ring to protect the clamp ring against ion bombardment during the deposition process. The wafer clamp ring may have a portion which overhangs the wafer during a deposition process, and which has a ridge portion extending downwards therefrom and tapering to a knife edge.