Abstract: Methods of laser processing photoresist in a gaseous environment to improve at least one of etch resistance and line-edge roughness are disclosed. The methods include sequentially introducing first and second molecular gases to the photoresist surface and performing respective first and second laser scanning of the surface for each molecular gas. The first molecular gas can be trimethyl aluminum, titanium tetrachloride or diethyl zinc, and the second molecular gas comprises water vapor. Short dwell times prevent the photoresist from flowing while serving to speed up the photoresist enhancement process.

Abstract: Methods of laser processing photoresist in a gaseous environment to improve at least one of etch resistance and line-edge roughness are disclosed. The methods include sequentially introducing first and second molecular gases to the photoresist surface and performing respective first and second laser scanning of the surface for each molecular gas. The first molecular gas can be trimethyl aluminum, titanium tetrachloride or diethyl zinc, and the second molecular gas comprises water vapor. Short dwell times prevent the photoresist from flowing while serving to speed up the photoresist enhancement process.

Abstract: A betavoltaic power source for mobile devices and mobile applications includes a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the mobile device over its useful lifetime.

Abstract: Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 ?s to about 100 ?s. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.

Abstract: An LED-based photolithographic illuminator with high collection efficiency is disclosed. The illuminator utilizes an array of LEDs, wherein each LED has an LED die and a heat sink. The LED dies are imaged onto the input end of a homogenizer rod to substantially cover the input end without inclusion of the non-light-emitting heat sink sections of the LED. A microlens array is used to image the LED dies. The collection efficiency of the illuminator is better than 50% and the illumination uniformity at the output end of the light homogenizer is within +/?2%.

Abstract: A programmable illuminator for a photolithography system includes a light source, a first optical system having a light uniformizing element, a programmable micro-mirror device, and a second optical system that forms an illumination field that illuminates a reticle. The programmable micro-mirror device can be configured to perform shutter and edge-exposure-blocking functions that have previously required relatively large mechanical devices. Methods of improving illumination field uniformity using the programmable illuminator are also disclosed.

Abstract: Systems and methods for processing a material layer supported by a substrate using a light-source assembly that includes LED light sources each formed from an array of LEDs. The material layer is capable of undergoing a photo-process having a temperature-dependent reaction rate. Some of the LEDs emit light of a first wavelength that initiate the photo-process while some of the LEDs emit light of a second wavelength that heats the substrate. The heat from the substrate then heats the material layer, which increases the temperature-dependent reaction rate of the photo-process.

Abstract: Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.

Abstract: Photolithographic methods of forming a roughened surface for an LED to improve LED light emission efficiency are disclosed. The methods include photolithographically imaging a phase-shift mask pattern onto a photoresist layer of a substrate to form therein a periodic array of photoresist features. The roughened substrate surface is created by processing the exposed photoresist layer to form a periodic array of substrate posts in the substrate surface. A p-n junction multilayer structure is then formed atop the roughened substrate surface to form the LED. The periodic array of substrate posts serve as scatter sites that improve the LED light emission efficiency as compared to the LED having no roughened substrate surface. The use of the phase-shift mask enables the use of affordable photolithographic imaging at a depth of focus suitable for non-flat LED substrates while also providing the needed resolution to form the substrate posts.

Abstract: Systems for and methods of laser-enhanced plasma processing of semiconductor materials are disclosed. The method includes supporting a semiconductor material in a processing chamber interior and subjecting the semiconductor material to a plasma process. The method also includes simultaneously heating the wafer surface with a laser beam through a window in the processing chamber to increase the reaction rate of the plasma process. Other methods include performing laser heating of the semiconductor material before or after the plasma process but while the semiconductor material resides in the same chamber interior.

Abstract: An alignment system for aligning a wafer when lithographically fabricating LEDs having an LED wavelength ?LED is disclosed. The system includes the wafer. The wafer has a roughened alignment mark with a root-mean-square (RMS) surface roughness ?S. The system has a lens configured to superimpose an image of the reticle alignment mark with an image of the roughened alignment mark. The roughened alignment marked image is formed with alignment light having a wavelength ?A that is in the range from about 2?S to about 8?S. An image sensor detects the superimposed image. An image processing unit processes the detected superimposed image to measure an alignment offset between the wafer and the reticle.

Abstract: Methods of characterizing semiconductor light-emitting devices (LEDs) based on product wafer characteristics are disclosed. The methods include measuring at least one product wafer characteristic, such curvature or device layer stress. The method also includes establishing a relationship between the at least one characteristic and the emission wavelengths of the LED dies formed from the product wafer. The relationship allows for predicting the emission wavelength of LED structures formed in the device layer of similarly formed product wafers. This in turn can be used to characterize the product wafers and in particular the LED structures formed thereon, and to perform process control in high-volume LED manufacturing.

Abstract: A Wynn-Dyson imaging system with reduced thermal distortion is disclosed, wherein the reticle and wafer prisms are made of glass material having a coefficient of thermal expansion of no greater than about 100 ppb/° C. The system also includes a first IR-blocking window disposed between the reticle and the reticle prism, and a second matching window disposed between the wafer and the wafer prism to maintain imaging symmetry. The IR-blocking window substantially blocks convective and radiative heat from reaching the reticle prism, thereby reducing the amount of thermally induced image distortion in the reticle image formed on the wafer.

Abstract: Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.

Abstract: Methods of characterizing semiconductor light-emitting devices (LEDs) based on product wafer characteristics are disclosed. The methods include measuring at least one product wafer characteristic, such curvature or device layer stress. The method also includes establishing a relationship between the at least one characteristic and the emission wavelengths of the LED dies formed from the product wafer. The relationship allows for predicting the emission wavelength of LED structures formed in the device layer of similarly formed product wafers. This in turn can be used to characterize the product wafers and in particular the LED structures formed thereon, and to perform process control in high-volume LED manufacturing.

Abstract: The disclosure is directed to laser annealing of GaN light-emitting diodes (LEDs) with reduced pattern effects. A method includes forming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of a GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions. The method also includes generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension. The method also includes irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.

Abstract: Systems and methods for performing ultrafast laser annealing in a manner that reduces pattern density effects in integrated circuit manufacturing are disclosed. The method includes scanning at least one first laser beam over the patterned surface of a substrate. The at least one first laser beam is configured to heat the patterned surface to a non-melt temperature Tnonmelt that is within about 400° C. of the melt temperature Tmelt. The method also includes scanning at least one second laser beam over the patterned surface and relative to the first laser beam. The at least one second laser beam is pulsed and is configured to heat the patterned surface from the non-melt temperature provided by the at least one first laser beam up to the melt temperature.

Abstract: Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.

Abstract: Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.

Abstract: An LED-based photolithographic illuminator with high collection efficiency is disclosed. The illuminator utilizes an array of LEDs, wherein each LED has an LED die and a heat sink. The LED dies are imaged onto the input end of a homogenizer rod to substantially cover the input end without inclusion of the non-light-emitting heat sink sections of the LED. A microlens array is used to image the LED dies. The collection efficiency of the illuminator is better than 50% and the illumination uniformity at the output end of the light homogenizer is within +/?2%.